• Title/Summary/Keyword: Gain Threshold

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A Streak Camera Study of Amplified Spontaneous Emission in Polyfluorene Thin Film

  • Shin, Hee-Won;Kim, Yong-Rok
    • Rapid Communication in Photoscience
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    • v.4 no.4
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    • pp.76-78
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    • 2015
  • We report on the photoluminescence (PL) properties of poly[2,7-(9-9-dioctylfluorene)] (PF) thin film under strong optical pumping using a streak camera system. When the excitation energy density increases above $72{\mu}J{\cdot}cm^{-2}$, the emission spectrum becomes narrower and PL decay curve comes to be faster simultaneously. These behaviors are clear evidence of Amplified Spontaneous Emission (ASE) due to a waveguided Stimulated Emission in slab structure of thin film. ASE threshold of $72{\mu}J{\cdot}cm^{-2}$ is comparable with previous reports and PF is attractive as a gain medium for plastic lasers.

Zinc tin oxide thin film transistors and simple circuits using a solution process (용액공정을 이용한 zinc tin oxide 박막 트렌지스터와 회로제작에 관한 연구)

  • Heo, Jae-Sang;Kim, Young-Hoon;Park, Sung-Kyu
    • Proceedings of the KIEE Conference
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    • 2011.07a
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    • pp.1477-1478
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    • 2011
  • Solution processed zinc tin oxide (ZTO) thin films were studied using a spin coating for the fabrication of thin film transistors and simple circuits. The solution processed thin film transistors (W/L = 100/10 ${\mu}m$) have the average saturation mobility of 1.9 $cm^2$/Vs, threshold voltage of 20 V, and subthreshold slope of 0.5 V/decade. The dc characteristics of an inverter with $W_{load}=100\;{\mu}m$ and $W_{drive}=10\;{\mu}m$, measured under votage supply of $V_{DD}$ = +50 V. The inverter beta ratio is 20 ($R=(W_{drived}/L_{drive})/(W_{load}/L_{load})=20$) and $gain_{max}$ is 2. The characteristics of an oscillator were measured under voltage supply of $V_{DD}$ = +60 V.

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A Four-Channel Laser Array with Four 10 Gbps Monolithic EAMs Each Integrated with a DBR Laser

  • Sim, Jae-Sik;Kim, Sung-Bock;Kwon, Yong-Hwan;Baek, Yong-Soon;Ryu, Sang-Wan
    • ETRI Journal
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    • v.28 no.4
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    • pp.533-536
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    • 2006
  • A distributed Bragg reflector (DBR) laser and a high speed electroabsorption modulator (EAM) are integrated on the basis of the selective area growth technique. The typical threshold current is 4 to 6 mA, and the side mode suppression ratio is over 40 dB with single mode operation at 1550 nm. The DBR laser exhibits 2.5 to 3.3 mW fiber output power at a laser gain current of 100 mA, and a modulator bias voltage of 0 V. The 3 dB bandwidth is 13 GHz. A 10 Gbps non-return to zero operation with 12 dB extinction ratio is obtained. A four-channel laser array with 100 GHz wavelength spacing was fabricated and its operation at the designed wavelength was confirmed.

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Selection Relaying Scheme Based Geographic Information with Imperfectly Decoding Relays in ARQ protocols

  • Xuyen, Tran Thi;Kong, Hyung Yun
    • The Journal of Korean Institute of Communications and Information Sciences
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    • v.35 no.7A
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    • pp.639-645
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    • 2010
  • In the paper, a selection relaying scheme is proposed and analyzed in which relays retransmit the erroneous packet without checking the correctness of their received packets. The proposal not only achieves the full diversity gain in a limited number of retransmissions but it also gets better performance than other schemes. Additionally, a threshold in the number of retransmissions and the closed form expression for packet error rate (PER) are derived. Simulation results are given to confirm the accuracy of analysis and to significantly prove advantages of the proposal.

10bits 40MS/s $0.13{\mu}m$ Pipelined A/D Converter for WLAN (WLAN용 10비트 40MS/s $0.13{\mu}m$ 파이프라인 A/D 변환기)

  • Park, Hyun-Mook;Cho, Sung-Il;Yoon, Kwang-Sub
    • Proceedings of the IEEK Conference
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    • 2008.06a
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    • pp.559-560
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    • 2008
  • In this paper, I proposed 10bits 40MS/s Pipelined A/D converter. The op-amps for SHA and MDAC designed folded-cascode amplifier with gain-booster. And the MOS transistors with a low threshold voltage are employed to low on-resistor and parasitic capacitance. The power dissipation is 119㎽ at 1.2V and 40MS/s

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A study on the single frequency operation yield of DFB lasers using a transfer matrix method (전달 매트릭스 방법을 이용한 DFB레이저의 단일주파수 동작 수율에 대한 연구)

  • 이재득;김상배
    • Journal of the Korean Institute of Telematics and Electronics A
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    • v.33A no.6
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    • pp.189-196
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    • 1996
  • We have studied sngle-frequency yield of 1.55${\mu}$m DFB lasers with uniform sinusoidal grating using an effective index transfer matrix method considering both threshold gain difference and spatial hole-burning effect. Optimum grating height and mirror reflectivities that maximize the single-frequency yield are found for a low-reflection (LR)/high-reflection(HR) mirror structure and a LR/as-cleaved miror structure for an assumed basic waveguide structure. LR/HR structure has a high yield of about 80% in a narrow range of grating height while LR/as-cleaved mirror structure has a low yield of about 50% in a relatively wide range of grating height. The effect of the low-reflection facet reflectivity is also studied.

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Optically Pumped Stimulated Emission from Column-III Nitride Semiconductors. (III족 질화물반도체의 광여기 유도방출)

  • 김선태;문동찬
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 1994.11a
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    • pp.50-53
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    • 1994
  • In this study. we report the properties of optically pumped stimulated emission at room temperature (RT) from column-III nitride semiconductors of GaN, GaInN, AlGaN/GaN double hetero-structure (DH) and AlGaN/GaInN DH which grown by low pressure metal-organic vapor phase epitaxy on sapphire substrate using an AIN buffer-layer. The peak wavelength of the stimulated emission at RT from AlGaN/GaN DH is 370nm and the threshold of excitation pumping power density (P$\_$th/) is about 89㎾/$\textrm{cm}^2$, and they from AlGaN/GaInN DH are 403nm and 130㎾/$\textrm{cm}^2$, respectively. The P$\_$th/ of AlGaN/GaN and AlGaN/GaInN DHs are lower than the bulk materials due to optical confinement within the active layers of GaN and GaInN. The optical gain and the polarization of stimulated emission characteristics are presented in this article.

Novel User Selection Algorithm for MU-MIMO Downlink System with Block Diagonalization (Block Diagonalization을 사용하는 하향링크 시스템에서의 MU-MIMO 사용자 스케쥴링 기법)

  • Kim, Kyunghoon
    • Journal of Korea Society of Digital Industry and Information Management
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    • v.14 no.3
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    • pp.77-85
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    • 2018
  • Multi-User Multiple-Input Multiple-Output (MU-MIMO) is the core technology for improving the channel capacity compared to Single-User MIMO (SU-MIMO) by using multiuser gain and spatial diversity. Key problem for the MU-MIMO is the user selection which is the grouping the users optimally. To solve this problem, we adopt Extreme Value Theory (EVT) at the beginning of the proposed algorithm, which defines a primary user set instead of a single user that has maximum channel power according to a predetermined threshold. Each user in the primary set is then paired with all of the users in the system to define user groups. By comparing these user groups, the group that produces a maximum sum rate can be determined. Through computer simulations, we have found that the proposed method outperforms the conventional technique yielding a sum rate that is 0.81 bps/Hz higher when the transmit signal to noise ratio (SNR) is 30 dB and the total number of users is 100.

The Carrier Diffusion Modeling of CSP-DH Semiconductor Laser Structures (CSP-DH 구조 반도체 레이저의 캐리어 확산 방정식을 위한 모델링)

  • Lee, S.T.;Jeon, H.S.;Lee, C.Y.;Um, K.Y.;Yoon, J.W.;Yoon, S.B.;Oh, H.S.
    • Proceedings of the KIEE Conference
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    • 1988.07a
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    • pp.469-471
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    • 1988
  • The basic modeling is analyzed on the optoelectronic properties of CSP-DH laser structure using self-consistent calculation of optical field and the electron-hole distribution in the active region. Laser properties is modelled include gain profile, threshold, near field and far field pattern. This new characterization is allowed for consideration such as carrier spatial hole burning due to strong optical fields which stimulate recombination.

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Robust Code Acquisition System in Rayleigh Fading Channel (Rayleigh 페이딩 채널에서 강인한 동기 획득 시스템)

  • 장경운;김기채;박용완
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.11 no.5
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    • pp.723-730
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    • 2000
  • In this paper, we perform a performance analysis of serial acquisition scheme using AWGN rejection filter in Rayleigh fading channel and propose robust acquisition scheme using Reference filter, which is utilized to vary threshold at fading rate, in Rayleigh fading channel. AWGN rejection filter is utilized to evaluate running average for compensating channel gain. The JAKE model, which a channel model, is used for the analysis. The simulation result shows that the mean acquisition time of the proposed acquisition system is minimized than acquisition system using AWGN rejection filter and serial-search acquisition system.

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