• Advances in nano research
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• 제2권3호
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• pp.157-172
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• 2014

The three-dimensional Nano-Electronic Modeling toolkit (NEMO 3-D) is an open source software package that allows the atomistic calculation of single-particle electronic states and optical response of various semiconductor structures including bulk materials, quantum dots, impurities, quantum wires, quantum wells and nanocrystals containing millions of atoms. This paper, first, describes a software module introduced in the NEMO 3-D toolkit for the calculation of electronic bandstructure and interband optical transitions in nanowires having wurtzite crystal symmetry. The energetics (Hamiltonian) of the quantum system under study is described via the tight-binding (TB) formalism (including $sp^3$, $sp^3s^*$ and $sp^3d^5s^*$ models as appropriate). Emphasis has been given in the treatment of surface atoms that, if left unpassivated, can lead to the creation of energy states within the bandgap of the sample. Furthermore, the developed software has been validated via the calculation of: a) modulation of the energy bandgap and the effective masses in [0001] oriented wurtzite nanowires as compared to the experimentally reported values in bulk structures, and b) the localization of wavefunctions and the optical anisotropy in GaN/AlN disk-in-wire nanowires.

• 한국자기학회:학술대회 개요집
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• 한국자기학회 2007년도 동계학술연구발표회 및 스핀트로닉스와 나노물리에관한 국제심포지움
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• pp.54-55
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• 2007

• 한국광학회:학술대회논문집
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• 한국광학회 2006년도 하계학술발표회 논문집
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• pp.119-120
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• 2006

• 한국자기학회:학술대회 개요집
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• 한국자기학회 2007년도 동계학술연구발표회 및 스핀트로닉스와 나노물리에관한 국제심포지움
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• pp.108-109
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• 2007

• 한국자기학회:학술대회 개요집
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• 한국자기학회 2005년도 하계학술연구발표회 논문개요집
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• pp.56-57
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• 2005

• 한국재료학회지
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• 제20권4호
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• pp.199-203
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• 2010

Hybridization of semiconductor materials with carbon nanotubes (CNTs) is a recent field of interest in which new nanodevice fabrication and applications are expected. In this work, nanowire type GaAs structures are synthesized on porous single-wall carbon nanotubes (SWCNTs) as templates using the molecular beam epitaxy (MBE) technique. The field emission properties of the as-synthesized products were investigated to suggest their potential applications as cold electron sources, as well. The SWCNT template was synthesized by the arc-discharge method. SWCNT samples were heat-treated at $400^{\circ}C$ under an $N_2/O_2$ atmosphere to remove amorphous carbon. After heat treatment, GaAs was grown on the SWCNT template. The growth conditions of the GaAs in the MBE system were set by changing the growth temperatures from $400^{\circ}C$ to $600^{\circ}C$. The morphology of the GaAs synthesized on the SWCNTs strongly depends on the substrate temperature. Namely, nano-crystalline beads of GaAs are formed on the CNTs under $500^{\circ}C$, while nanowire structures begin to form on the beads above $600^{\circ}C$. The crystal qualities of GaAs and SWCNT were examined by X-ray diffraction and Raman spectra. The field emission properties of the synthesized GaAs nanowires were also investigated and a low turn-on field of $2.0\;V/{\mu}m$ was achieved. But, the turn-on field was increased in the second and third measurements. It is thought that arsenic atoms were evaporated during the measurement of the field emission.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2005년도 제28회 학술발표회 초록집
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• pp.127-127
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• 2005

• 한국세라믹학회지
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• 제50권3호
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• pp.173-179
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• 2013

Wurtzite nanomaterials, such as ZnO, GaN, and InN, have become a subject of great scientific and technological interest as they simultaneously have piezoelectric and semiconductor properties. In particular, the piezoelectric potential (piezopotential) created by dynamic straining in the nanowires drives a transient flow of current in the external load, converting mechanical energy into electricity. Further, the piezopotential can be used to control the carrier generation, transport, separation, and/or recombination at the metal-semiconductor junction or p-n junction, which is called the piezophototronic effect. This paper reviews the recent advances on the piezophototronic effect to better use the piezophototronic effect to control the carrier generation, transport, separation and/or recombination for improving the performance of optoelectronic devices, such as photon detectors, solar cells and LEDs. This paper also discusses several research and design studies that have improved the output performance of optoelectronic devices.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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• pp.422-422
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• 2008

본 연구에서, 금 촉매가 4nm 증착된 GaN/$Al_2O_3$ 기판위에 nanowire와 nanowall과 같은 ZnO 나노구조물을 화학기상증착법을 이용하여 합성시켰다. 합성된 ZnO 나노구조물의 형상은 성장시간과 성장온도 조작을 통하여 제어하였다. 합성된 ZnO 나노구조물의 협상을 관찰하기 위해, 전계방출 주사전자현미경을 측정하였다. ZnO 나노구조물은 성장 온도가 $1000^{\circ}C$에서 $1100^{\circ}C$로 증가함에 따라 불균일한 막, nanowire, nanowall 형태로 형상이 점차적으로 변하였으며, 또한 각각의 성장온도에서 성장 시간이 증가함에 따라 나노와이어의 성장이 두드러지게 나타났다. 또한 합성된 ZnO 나노구조물의 결정성과 광학특성을 X-ray diffraction pattern과 상온 photoluminescence spectrum을 이용하여 각각 분석하였다. 이룰 통하여 합성된 ZnO 나노구조물은 wurzite 결정구조를 가지며, 380nm 영역에서 near band edge emission 에 의한 발광 peak와 500~550nm 영역에서 deep level emission에 의한 발광 peak이 나타나는 것을 확인하였다.