• Title/Summary/Keyword: GaMnAs

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A Study on Temperature Dependence of the Electron Transport Properties of Gallium Arsenide using a Monte Carlo Method (Monte Carlo Method을 이용한 GaAs 전자전송특성의 온도의존성에 관한 연구)

  • Yoon, J.S.;Ha, S.Ch.
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 1988.05a
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    • pp.56-59
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    • 1988

  • Electron transport properties of gallium arsenide in an electric field are simulated the drift velocity, Mn.energy, electron occupation, mobility in the temperature range $77^{\circ}K-500^{\circ}K$ using a Monte Carlo Method. Therefore it can be used for a GaAs MESFET design.

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Studies on the Bacterial Production of L-Glutamate from Acetate Part II. Cultural Conditon (초산을 이용한 글루타민산의 발효생산에 관한 연구 (제2보) 글루타민산 생성을 위한 발효조건)

  • 하덕모;노완섭;서동하
    • Microbiology and Biotechnology Letters
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    • v.2 no.3
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    • pp.141-147
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    • 1974

  • The cultural conditions for L-glutamate production were investigated using Brevibacterium flavum nov. sp. D2209B, the most productive strain among 5 strains reported in preceeding paper. A temperature of 3$0^{\circ}C$ and a medium volume of 30 ml per 500-flask were selected as standard culture conditions. And the following results were obtained. 1. When the concentration of acetate in the medium was below 30 g per litre, the maximum amount of L-glutamate was accumulated. 2. KH$_2$PO$_4$, MgSO$_4$, FeCI$_3$ and MnCI$_2$ were required for the L-glutamate poduction, but the concentration of those inorganic salts little effected. 3. Signifcant amount of L-glutamate was accutnulated in the limited biotin concentration less than 0.3 ug per litre. 4. The addition of malic acid or succinic acid enhanced the accumulation. 5. The L-glutamate accumulation was related to the incubation time of seed; the amount of L-glutamate accumulated was maximum by inoculating 16-20 hour incubated seed. 6. In the medium containing sufficient amount of biotin for growth, L-glutamate accumulation was stimulated by the addition of penicillin at appropreate time during incubation.

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Growth and optical conductivity properties for MnAl2S4 single crystal thin film by hot wall epitaxy method (Hot Wall Epitaxy(HWE)법에 의한 MnAl2S4 단결정 박막 성장과 광전도 특성)

  • You, Sangha;Lee, Kijeong;Hong, Kwangjoon;Moon, Jongdae
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.24 no.6
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    • pp.229-236
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    • 2014

  • A stoichiometric mixture of evaporating materials for $MnAl_2S_4$ single crystal thin films was prepared from horizontal electric furnace. To obtain the single crystal thin films, $MnAl_2S_4$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The source and substrate temperatures were $630^{\circ}C$ and $410^{\circ}C$, respectively. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The temperature dependence of the energy band gap of the $MnAl_2S_4$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)=3.7920eV-5.2729{\times}10^{-4}eV/K)T^2/(T+786 K)$. In order to explore the applicability as a photoconductive cell, we measured the sensitivity (${\gamma}$), the ratio of photocurrent to dark current (pc/dc), maximum allowable power dissipation (MAPD) and response time. The results indicated that the photoconductive characteristic were the best for the samples annealed in S vapour compare with in Mn, Al, air and vacuum vapour. Then we obtained the sensitivity of 0.93, the value of pc/dc of $1.10{\times}10^7$, the MAPD of 316 mW, and the rise and decay time of 14.8 ms and 12.1 ms, respectively.

  • https://doi.org/10.6111/JKCGCT.2014.24.6.229 인용 PDF KSCI