• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.29 no.10
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• pp.766-772
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• 2018

A 6~10 GHz wide-band power amplifier was designed using an InGaAs enhancement-mode(E-mode) $0.15{\mu}m$ pseudomorphic high-electron-mobility transistor(pHEMT). The positive gate bias of the E-mode pHEMT device removes the need for complex negative voltage generation circuits, therefore reducing the module size. The wire bond and substrate loss parameters were modeled and extracted using a three-dimensional electromagnetic(3D EM) simulation. For wideband characteristics, lossy matching was adopted and the gate bias was optimized for maximum power and efficiency. The measured gain, in/output return loss, output power, and power-added efficiency were greater than 20 dB, 8 dB, 27 dBm, and 35 %, respectively, in the 6~10 GHz band.