• Current Photovoltaic Research
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• 제8권2호
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• pp.50-53
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• 2020

GaN based photoelectrode has shown good potential owing to its better chemical stability and tunable bandgap with materials such as InN and AlN. Tunable bandgap allows GaN to make the maximum utilization of solar spectrum, which could improve photoelectrode performance. However, the problems about low photoelectrode performance and photo-corrosion still remain. In this study, we attempt to investigate the photoelectrochemical (PEC) properties of phosphor application to InGaN photoelectrode. Experimental result shows YAG:Ce³⁺ and beta-SiALON phosphor result in the highest photoelectrode performance of InGaN.

• The Korean Journal of Pain
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• 제4권1호
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• pp.51-55
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• 1991

There is a variety of therapeutic modality for herniated nucleus pulposus. Recently the low level laser has come into use for treatment for it. We treated two patients suffered from herniated nucleus pulposus of the central type of $L_{3,4}$ level, with He-Ne, $CO_2$ and Ga Al As laser simultaneously daily under hospitalization. In order to determine the efficacy of treatment, we used the "visual analogue scale" and its improvement rate. The results were as follows; Case I complained of gait disturbance, and hypoesthesia on the lateral side of the left lower leg, as and as low back pain. At the 15th day after treatment, VAS improvement rate was 40%, and the gait disturbance and hypoesthesia were markedly improved. 35th days after tratement, VAS improvement rate was 80%. Case II complained only of low back pain. At the 15th day after treatment, the VAS improvement rate was 68%, and at 20 days after treatment it was 84%. We sugsest that, using the low level laser for treatment of herniated nucleus pulposus increased the cartilage entrophism, and inhibitory effects of the inflammatory materials such as acid glycosaminoglycan by its anti-inflammatory and analgesic effects.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2005년도 추계학술대회 논문집 전기물성,응용부문
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• pp.220-222
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• 2005

We can classify two cases in a way to observe an atom of gas state or a molecule using the laser. First case is way to use dispersion phenomenon like Rayleigh scattering, Thomson scattering, Mie scattering, Raman Scattering. And Second case is a way to use change phenomenon like a LAS (Laser Absorption Spectroscopy), LIF (Laser Induced Fluorescent). In this paper, we have measured the meta-stable density and the distribution by using a LAS method in Xe discharge lamp. The laser absorption spectroscopy (LAS) is useful to investigate the behavior of such species. The xenon atoms in the $1S_4$ and $1S_5$ generate excited $Xe^*$(147nm) and $Xe_{2}^*$(173nm) dimers in Xe plasma. It is found that the intensity of VUV 147nm emission is proportional to that of the IR 828nm emission, and the VUV 173nm emission is roughly proportional to that of the IR 823nm emission. The laser is used CW laser that consist of AlGaAs semiconductor and energy level is used 823.16nm wavelength. We measured signal of monochrometer from the lamp center while will change a discharge electric current by 6mA in 3mA and calculated meta-stable state density of a xenon atom through a measured value.

• 한국진공학회지
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• 제8권4B호
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• pp.530-535
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• 1999

W made a near-field optical microscope(NSOM) apparatus and evaluated it. To control the distance between a tip and a sample, we used a piezoelectric translator and a He-Ne laser, and consequently obtained the spatial resolution better than 100nm. For the semiconductor spectroscopic applications, we performed photoluminescence and photocurrent experiments on the GaAs/AlGaAs MQWs samples. In the case of PL experiment, we obtained the low signal to nose ration due to the extremely small power of a light source passing through the nanometric optical fiber tip. However photocurrent experiment shows a hundred times better signal to noise than that of PL experiment. This suggests that photocurrent experiment using NSOM have the possibility to provide the spatial resolution better than 10nm.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2007년도 제33회 하계학술대회 초록집
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• pp.359-359
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• 2007

• Journal of Oral Medicine and Pain
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• 제24권3호
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• pp.269-280
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• 1999

구강안면동통환자의 발통점에 대한 보존적 치료방법중 저출력레이저의 효과를 평가하기 위해 교근, 측두근과 승모근에 발통점을 가진 치과대학생 69명을 무작위로 분류하여 37명에게는 GaAlAs 반도체 레이저를 조사하였고 나머지 32명은 레이저를 실제로 조사하지 않고 대조군으로 삼았다. 50mW, 820nm의 GaAlAs 반도체 레이저를 이용하여, 4주 동안 첫 주는 2회, 이후 3주 동안 1회씩 총 5회 조사하였고 전자통각계를 이용하여 압력통각역치를 측정한 후 이를 대조군과 비교한 바 다음과 같은 결과를 얻었다. 1. 남녀 및 조사군과 비조사군의 치료 전 압력통각역치는 차이가 없었다. 2. 조사군의 각 근육에서 측정한 압력통각역치는 레이저 치료 2주 후부터 유의하게 높아졌으나 비조사군에서는 차이가 없었다, 3. 비조사군의 치료 전, 후 압력통각역치에는 성 차가 없었다. 반면 종사군의 압력통각역치는 치료 전에는 성 차가 없었으나 치료 후에는 남성이 여성보다 유의하게 높았다.

• 대한전자공학회논문지SD
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• 제43권12호
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• pp.40-46
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• 2006

본 연구에서는 GaAs/AlGaAs 구조의 수직 구조 레이저 - 완전 공핍 광 싸이리스터를 제작하여, 광 논리 및 광 스위칭 시스템에 응용할 수 있는, 광 AND- 와 OR- 게이트를 구현하였고, 그 특성을 측정, 분석하였다. 제작된 단일 소자 타입의 광 싸이리스터는 하나의 소자에서 간단한 기준 스위칭 전압의 변화만으로 광 AND 와 OR 게기트를 모두 구현할 수 있다는 장점을 갖는다. 활성층 위, 아래에 1/4 파장 거울층 구조를 채택하고, 선택적 산화공법을 이용하여 0.65 mA의 낮은 문턱전류 값을 얻었고, 50dB 이상의 높은 온/오프 대비를 보였으며, 높은 광 출력 효율과 입력 광 신호에 대한 높은 선택도를 얻을 수 있었다. 제작된 광 싸이리스터는 실험적으로 S자형의 전류-전압 특성곡선을 얻었고, 빛의 세기가 증가함에 따라 스위칭 전압이 5.20V에서 1.90V로 현저히 줄어드는 것을 확인하였다

• The Journal of Korean Physical Therapy
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• 제14권3호
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• pp.226-237
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• 2002

This study was performed to investigate the effect of low power laser irradiation on epidermal growth factor(EGF) expression in the burned skin of the rats. Burns of about 3cm in diameter were created with 75'c water on the back of the rats, and the lesion of experimental group were irradiated on days 1, 2, and 3 postwounding. Control tensions were not irradiated. After burns, low power laser irradiation was applied by using 1000Hz, 830nm GaAlAs (Gallium-aluminum- arsenide) semiconductor diode laser. The expression of epidermal growth factor evaluated immunohistochemistry on mouse anti-EGF. The results of this study were as follows 1. In expression of EGF, the lesion of experimental group made EGF to more induce significantly than control tensions. 2. EGF immunoreactivity in burned skin were increased markedly 3 days after burns, and increased gradually from 1 day to 2 days in burns which is laser irradiation These data suggest that low power laser have wound healing effect in the burned skin of the rats.

• 전자공학회논문지A
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• 제30A권4호
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• pp.28-39
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• 1993

In the international BISDN used satellite, the laser that has large BW has to be used as a carrier for transmitting a lot of visual, vocal, and data information. Interoptical satellite communication has now developed in theoretical and practical aspects. But the optical communication, between satellite and earth station, is hindered by atmospheric absorption, scattering, and turbulence. In this paper, it was supposed that 1Gbps information was transmitted by binary FSK and 50mW AlGaAs semiconductor laser was used as a optical source in the satellite communication link between geosynchronous orbit satellite and earth station. We analyzed the BER and the entire diameter of the noncoherently combined optical heterodyne receiver as el evation angle, and determined the number of the optical heterodyne rece ivers, which is necessary for the BER of the receiver to be less than 10$^{-9}$ by computer simulation under the clear weather condition. It is shown that the BER and the number of the optical heterodyne receivers decrease as the elevation angle increases. In the region used the same number of the optical heterodyne receivers, it is shown that the entire diameter of the receiver increases but the BER decreases as the elevation angle increases.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2010년도 하계학술대회 논문집
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• pp.338-338
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• 2010

지난 20여년 동안 반도체 레이저 다이오드는 주로 CD (DVD) 픽업용 (파장: 640 nm 이하) 및 통신용 (파장 1550 nm) 광원 분야에서 집중적으로 개발되어 왔다. 그러나 기술의 개발과 더불어 파장조절이 비교적 자유로워지고 광출력이 증대 되면서 기존의 레이저 고유의 영역까지 그 응용분야기 확대되고 있고, 이에 따라 고출력 반도체 레이저 다이오드의 시장 규모도 꾸준히 증가되고 있는 상황이다. 고출력 반도체 레이저 다이오드는 발진 파장 및 광출력에 따라 다양한 분야에 응용되고 있으며, 특히 발진파장이 808 nm 인 고출력 레이저 다이오드의 경우 재료가공, 펌핑용 광원 (DPSSL, 광섬유 레이저), 의료, 피부미용 (점 제거), 레이저 다이오드 디스플레이 등 가장 다양한 응용분야를 가진 광원 중의 하나라고 할 수 있다. MBE(Molecular Beam Epitaxy)로 성장된 InAlAs 에피층 (epi-layer)을 사용하여 고출력을 갚는 레이저 다이오드를 제작함에 있어서, 에피층은 결함 (defect)이 없는 우수한 단결정이 요구되지만, 실제 결정 성장 과정에서는 성장온도와 Al 조성비 등의 성장 조건의 변화에 따라 전기적 광학적 특성 및 신뢰성에 큰 영향을 받는 것으로 보고되고 있다. 이에 본 연구에서는 DLTS (Deep Level Transient Spectroscopy) 방법을 이용하여 InAlAs 양자점 에피층의 깊은 준위 거동을 조사하였다. DLTS 측정 결과, 0.3eV 부근의 point defect과 0.57 ~ 0.70 eV 영역의 trap이 조사되었으며, 이는 갈륨 (Ga) vacancy와 산소 원자의 복합체에 기인한 결함으로 분석된다.