• Journal of Navigation and Port Research
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• v.26 no.2
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• pp.235-243
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• 2002

Theoretical analysis have been performed to design the high power semiconductor laser for an optical sensor at 1.55${\mu}{\textrm}{m}$ wavelength range which is the lowest loss wavelength in optical fiber. The materials of active region and SCH were $Ln_{1-x}Ga_xAs_yP_{1-y}$. In order to use the light source of optical sensors, it has to satisfy wide spectral width and short coherence length. Therefore, in order to suppress lasing oscillation, we proposed laterally tilted PBH type with a window region. Also, tapered stripe structure was applied for high coupling efficiency into a single mode fiber. From these analyses, the devices of laterally tilted angled and bending structure were fabricated and their characteristics were measured. In the results of the measurement, the fabricated devices have sufficient output power and wide FWHM to apply to the light source of optical fiber sensors.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.187-187
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• 2013

양자점(Quuantum dot, QD)은 0차원 특성을 가지는 구조로 양자 구속 효과로 인하여 bulk와 는 다른 구조적, 광학적, 전기적 특성을 가지고 있다. InAs QD는 size와 barrier의 bandgap 조절을 이용하여 쉽게 bandgap을 바꿀 수 있는 장점이 있어 solar cell, semiconductor laser diode, infrared photodetector 등으로 많은 연구가 이루어지고 있다. 일반적으로 Stranski-Krastanov (SK) mode로 성장한 InAs QD는 보통 GaAs epilayer와의 lattice mismatch (7%)를 이용하여 성장을 하고 이로 인하여 strain을 가지고 있고 QD의 density와 stack이 높을수록 strain이 커진다. 하지만 sub-monolayer (SML) QD 같은 경우 wetting layer가 생기는 지점인 1.7 ML이하에서 성장되는 성장 방식으로 SK-QD보다는 작은 strain을 가지게 된다. 또 QD의 size가 작아 SK-QD보다 큰 bandgap을 가지고 있다. 본 연구에서는 분자선 에피택시(molecular beam epitaxy, MBE)를 이용하여 semi-insulating GaAs substrate 위에 InAs QD를 0.5/1/1.5/1.7/2/2.5 monolayer로 성장을 하였다. GaAs과 InAs의 성장온도와 성장속도는 각각 $590^{\circ}C$, 0.8 ML/s와 $480^{\circ}C$, 0.2 ML/s로 성장을 하였으며 적층사이의 interruption 시간은 10초로 고정하였고 10주기를 성장하였다. Photoluminescence (PL)측정 결과 SML-QD는 size에 따라서 energy가 1.328에서 1.314 eV로 약간 red shift를 하였고 SK-QD의 경우 1.2 eV의 energy정도로 0.1 eV이상 red shift 하였다. 이는 QD size에 의하여 energy shift가 있다고 사료된다. 또 wetting layer의 경우 1.41 eV의 energy를 가지는 것으로 확인 하였다. SML-QD는 SK-QD 보다 반치폭(full width at half maximum, FWHM)이 작은 것은 확인을 하였고 strain field의 감소로 해석된다. 하지만 SML-QD의 경우 SK-QD보다 상대적으로 작은 PL intensity를 가지고 있었다. 이를 개선하기 위해서는 보다 높은 QD density를 요구하게 되는데 growth temperature, V/III ratio, growth rate 등을 변화주어서 연구할 계획이다.

• ETRI Journal
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• v.13 no.4
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• pp.2-9
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• 1991

Buried-heterostructure lasers are more difficult to fabricate than weakly index guided or gain guided lasers. However, these strongly index guided structures are most suitable for a source of lightwave transmission systems. But, for conventional etched mesa buried heterostructure lasers, the regrowth of InP blocking layer is difficult and irreproducible. So, there are inevitable leakage currents flowing outside the active region resulting poor performance. To eliminate these problems, we used a planar buried heterostructure. As a results, the average threshold current was 28mA and the differential quantum efficiency was about 20% per facet for $1.3\mum$ GaInAsP/InP PBH-LD. The initial forward leakage current was not exceeding $1\muA$ and the reverse voltage for $-10\muA$ was -3V~-5V, these are improved figure of 1mA~10mA and -1V~-3V for EMBH laser diode. The chip modulation bandwidth was more than 2.4GHz for $1.5I_th$.

• Current Optics and Photonics
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• v.3 no.2
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• pp.164-171
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• 2019

Photoluminescence (PL) properties of GaN-based light-emitting diodes (LEDs) were analyzed to study the effects of carrier leakage on the luminescence properties at room temperature. The electrical leakage and PL properties were compared for LEDs showing leakages at forward bias and an LED with an intentional leakage path formed by connecting a parallel resistance of various values. The leakages at the forward bias, which could be observed from the current-voltage characteristics, resulted in an increase in the excitation laser power density for the maximum PL efficiency (ratio of PL intensity to excitation power) as well as a reduction in the PL intensity. The effect of carrier leakages on PL properties was similar to the change in PL properties owing to a reduction of the photovoltage by a reverse current since the direction of the carrier movement under photoexcitation is identical to that of the reverse current. Valid relations between PL properties and electrical properties were observed as the PL properties deteriorated with an increase in the carrier leakage. The results imply that the PL properties of LED chips can be an indicator of the electrical properties of LEDs.

• Restorative Dentistry and Endodontics
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• v.16 no.2
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• pp.85-98
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• 1991

The aim of this study was to investigate the effect of low - power laser used in the medical field for various purposes to suppress pain responses evoked by noxious electrical or mechanical stimuli. After both inferior alveolar nerves and the left anterior digastric muscle of cats under general anesthesia were exposed, a recording electrode for the jaw opening reflex was inserted into the anterior digastric muscle. The right inferior alveolar nerve was dissected under a surgical microscope until the response of the functional single nerve could be evoked by the electrical stimulation of the dental pulp or oral mucosa. The electrical stimulus was applied with a rectangular pulse of 10 ms duration for measuring the threshold intensity of a single nerve fiber in the inferior alveolar nerve which responds to stimulation of dental pulp and oral mucosa. Then a pulse of 1 ms duration was applied for determination of conduction velocity. A noxious mechanical stimulus to the oral mucosa was applied by clamping the receptive field with an arterial clamp. The Ga-As diodide laser(wave length, 904 nm ; frequency, 1,000 Hz) was irradiated to the prepared tooth cavity, inferior alveolar nerve and oral mucosa as a pulse wave of 2 mW for 6 minutes. This was followed by a continuous wave of 15 mW for 3 minutes. The action potential of the nerve and EMG of the digastric muscle evoked by the noxious electrical stimulus and nerve response to noxious mechanical stimulus were compared at intervals of before, immediately after, and at 5, 10, 20, 40, 60 minutes after laser irradiation. The results were as follows: The conduction velocity of the intrapulpal $A{\delta}$- nerve fiber recorded from the inferior alveolar nerve before irradiation had a mean value of $6.68{\pm}2.07m/sec$. The laser irradiation did not affect the conduction velocity of the AS - nerve fiber and did not change the threshold intensity or amplitude of the action potential either. The EMG of the digastric muscle evoked by noxious electrical stimulation to the tooth was not changed by the laser irradiation, whether in latency, threshold intensity or amplitude. The laser irradiated to the receptive field of the oral mucosa which was subjected to noxious stimuli did not affect the amplitude of the action potential or the frequency either.

• Korean Journal of Optics and Photonics
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• v.20 no.1
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• pp.41-47
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• 2009

We report the spectral characteristics of Multimode Interferometer (MMI)-coupled semicondoctor square ring resonators. The epitaxial layers of the proposed semiconductor ring resonator consists of $1.55{\mu}m$ GaInAsP-InP multiple quantum wells. The lasing characteristics were observed by varying the structure parameters of the MMI-coupled square ring resonators. It is concluded that the MMI-coupled scheme selects a single spectral lasing mode in the double square ring cavities.

• Journal of Oral Medicine and Pain
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• v.24 no.3
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• pp.269-280
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• 1999

구강안면동통환자의 발통점에 대한 보존적 치료방법중 저출력레이저의 효과를 평가하기 위해 교근, 측두근과 승모근에 발통점을 가진 치과대학생 69명을 무작위로 분류하여 37명에게는 GaAlAs 반도체 레이저를 조사하였고 나머지 32명은 레이저를 실제로 조사하지 않고 대조군으로 삼았다. 50mW, 820nm의 GaAlAs 반도체 레이저를 이용하여, 4주 동안 첫 주는 2회, 이후 3주 동안 1회씩 총 5회 조사하였고 전자통각계를 이용하여 압력통각역치를 측정한 후 이를 대조군과 비교한 바 다음과 같은 결과를 얻었다. 1. 남녀 및 조사군과 비조사군의 치료 전 압력통각역치는 차이가 없었다. 2. 조사군의 각 근육에서 측정한 압력통각역치는 레이저 치료 2주 후부터 유의하게 높아졌으나 비조사군에서는 차이가 없었다, 3. 비조사군의 치료 전, 후 압력통각역치에는 성 차가 없었다. 반면 종사군의 압력통각역치는 치료 전에는 성 차가 없었으나 치료 후에는 남성이 여성보다 유의하게 높았다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.415-416
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• 2008

The finite element model was used to simulate the temperature distribution of a arrayed vertical-cavity surface-emitting laser (VCSEL). In this work, the dimension of AlGaAs/GaAs based VCSEL array was $50{\mu}m$ active diameter and $250{\mu}m$ pitch, and AuSn solder of 80wt%Au-20wt%Sn was included to flip-chip bond. The results of the thermal simulation will be applied to predict the thermal cross-talk in high speed parallel optical interconnects.

• Tribology and Lubricants
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• v.37 no.3
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• pp.106-111
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• 2021

There are several studies on reducing the friction that occurs on the relative sliding contact surface of moving parts under extreme environments. In particular, a solid lubricated bearing is studied to solve the tribological problem with friction reduction and durability parts using solid lubricants (lead or silver) in a vacuum atmosphere. Galinstan is mainly used as a liquid metal lubricant, but it is inevitable to have limited tribological applications owing to its high coefficient of friction. Many researchers work on surface texturing for surface modification and precision processing methods. To increase durability and low friction, DLC coating with hydrophobicity is applied on the contact surface texture. Therefore, using an untextured specimen, a dimple specimen, and a DLC-coated dimple specimen under liquid metal lubrication, this paper presents the following experimental sliding friction characteristics in the sliding friction test. 1) The average coefficient of friction of the DLC-coated dimple specimen and dimple specimen are lower compared to that of a non-patterned specimen. 2) In the DLC-coated dimple specimens, the average coefficient of friction changes according to the change in the dimple density. 3) DLC-coated dimple specimens with a density of 12.5 have the lowest average coefficient of friction under 41.6 N of normal load and 143.3 RPM.

• Journal of Oral Medicine and Pain
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• v.17 no.2
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• pp.129-149
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• 1992

In order to verify the acceleration effect of low level laser (LLL) on oral mucosal wound healing process at cell biological level, the author studied growth pattern and ultrastructure in human gingival fibroblasts flashed by GaAlAs LLL-830 nm, 15mW for 10 minutes/flash one to three times at interval of 3-4 days through the evaluation of cell growth rate, protein conent/cell, DNA content/cell and ultrastructural changes for 14 days. The results were as follows : 1. The growth rate in gingival fibloblasts treated by LLL showed 4 orderly stages-decreasing stage after LLL treatment, acute increasing stage 3 days after LLL treatment, restring stage and recovering stage. 2. The effect of multiple flashes on LLL at interval of 3 days more or less was not proportional to times of flash on acceleration of growth in gingival fibroblasts. 3. The total protein content per gingival fibroblast was not significantly changed by LLL treatment in comparison with control group. But some kinds of protein which might be cell growth promoting factors were decreased immediately after LLL treatment, thereafter were acutely increased in cellular protein profile. 4. In ultrastructural changes of gingival fibroblasts treated by LLL, more prominent rough endoplasmic reticulum, mitochondrial hyperplasia/hypertrophy and increased extracellular fibrillar matrix were observed in comparison with control group under same experimental period.