• ETRI Journal
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• v.6 no.4
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• pp.3-8
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• 1984

Frequency division multiplexed 3ch. Color TV signals have been transmitted via optical fiber by employing $1. 3\mum$ InGaAsP DH-laser diode, graded index optical fiber and Ge-APD as optical components. Overall system margin of 20 dB was realized at weighted SNR of more than 49 dB. With this system margin, measured DG and DP were less than 10% and $5^{\circ}$respectively. Throughout this experiment, it was confirmed that multichannel TV signals could be economically transmitted over optical fiber in short haul networks. This paper describes system outlines and hardware implementation results.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.309-309
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• 2009

In-Ga-Zn-O (IGZO) has drawn much attention as a compatible material for transparent thin film transistors (TTFT) channel layer due to its high mobility and optical transparency at low processing temperatures. In this work, we investigated the effect of oxygen ambient on structural, electrical and optical properties of amorphous In-Ga-Zn-O (IGZO) thin films by using pulsed laser deposition (PLD). The films were deposited at various oxygen pressures and the structural, electrical and optical properties were investigated. X-ray diffraction (XRD) analysis showed that amorphous IGZO films were grown at all oxygen pressures. The surface morphology and optical properties with various oxygen pressures were studied by field emission scanning electron microscopy (FE-SEM) and UV-VIS spectroscopy, respectively. The grain boundary was observed more apparently and the calculated optical band gap became larger as oxygen pressure increased. To examine the electrical properties, Hall-effect measurements were carried out. The films showed high mobility.

• Journal of Periodontal and Implant Science
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• v.26 no.4
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• pp.1003-1012
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• 1996

The induction of a phenotype with preoperties may have clinical significance in the acceleration of the wound-healing process. Wound contraction involves a specialized cell known as the myofibroblast. The myofibroblasts can be identified by their intense staining of actin bundles with anti-actin antibody. Tissue-specific actin distribution is correlated with the contractile activity of the myofibroblasts and smooth muscle etc. This study was performed to determine the expression of actin filaments in the cytoplasm of cultured human gingival fibroblsts after GaAs laser(BIOSAER, Korea) irradiation. Human gingival fibroblasts were cultured from explants of normal interdental gingival tissue. The third-generation fibroblasts were used for immunohistochemical study. The cultured fibroblasts were exposed $0.53joule/cm^2$(lmW, 7 mimutes) of energy density, and then observed by immunohistochemical method using, rabbit anti0gelsolin, hen smooth muscle polyclonal antibody(Chemicon international inc.), and biotinylated goat anti-rabbit IgG(Vectastain) 24-, 36-, 48-hour after laser irradiation Following results were obtained ; 1. In nonirradiated cultures, round shaped active fibroblasts with abundant cytoplasm and prominet nucleoli were observed. 2. In 24- and 36-hour cultures after laser irradiation, spindle shaped cells with long process were observed. The intensity of stain was seen in cytoplasm of these modified fibroblasts. 3. In 48-hoour cultures after laser irradiation, stained spindle shape cell were not observed. The results suggest that the effect of the galium-arsenide laser treatment on cultured gingival fibroblasts is the rapid development of cytoplasmic actin filaments.

• The Journal of Korean Physical Therapy
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• v.14 no.3
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• pp.226-237
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• 2002

This study was performed to investigate the effect of low power laser irradiation on epidermal growth factor(EGF) expression in the burned skin of the rats. Burns of about 3cm in diameter were created with 75'c water on the back of the rats, and the lesion of experimental group were irradiated on days 1, 2, and 3 postwounding. Control tensions were not irradiated. After burns, low power laser irradiation was applied by using 1000Hz, 830nm GaAlAs (Gallium-aluminum- arsenide) semiconductor diode laser. The expression of epidermal growth factor evaluated immunohistochemistry on mouse anti-EGF. The results of this study were as follows 1. In expression of EGF, the lesion of experimental group made EGF to more induce significantly than control tensions. 2. EGF immunoreactivity in burned skin were increased markedly 3 days after burns, and increased gradually from 1 day to 2 days in burns which is laser irradiation These data suggest that low power laser have wound healing effect in the burned skin of the rats.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.243-243
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• 2010

Low-temperature grown (LTG) InGaAs epilayers were grown by MBE technique for studying a correlation between terahertz (THz) emission and the intrinsic defects. The 1.2-um-thick Be-compensated LTG-InGaAs epilayers were prepared on SI-InP:Fe substrate at $200-250^{\circ}C$, and subsequently in-situ annealed under As environment at $550^{\circ}C$ for 5-30 minutes. The carrier concentration/mobility and the crystalline structure were analyzed by the Hall effect and the x-ray diffraction (XRD), respectively, and the carrier lifetime were determined by the fs time-resolved pump-probe spectroscopy. THz generation from LTG-InGaAs was carried out by a Ti-sapphire laser (800 nm) of a pulse width of 190 fs at a repetition of 76 MHz. Figure shows the spectral amplitude of generated waves in the THz region. As the growth temperature of epilayer increases, the amplitude is enhanced. However, two samples grown at $200^{\circ}C$, as-grown and annealed, show almost no difference in the spectral amplitude. This suggests that the growth temperature is critical in the formation of defect states involved in THz emission. We are now investigating the correlations between the XRD band attributed to defects, the Hall parameter, and the spectral amplitude of generated THz wave.

• Journal of the Korean Vacuum Society
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• v.15 no.2
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• pp.201-208
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• 2006

Optical characteristics of InGaAs quantum dot (QD) laser structures with an Al native oxide (AlOx) layer as a current-blocking layer were studied by means of photoluminescence (PL), PL excitation, and spatially-resolved micro-PL techniques. The InGaAs QD samples were first grown by molecular-beam epitaxy (MBE), and then prepared by wet oxidation and thermal annealing techniques. For the InGaAs QD structures treated by the wet oxidation and thermal annealing processes, a broad PL emission due to the intermixing effect of the AlOx layer was observed at PL emission energy higher than that of the non-intermixed region. We observed a dominant InGaAs QD emission at about 1.1 eV in the non-oxide AlAs region, while InGaAs QD-related emissions at about 1.16 eV and $1.18{\sim}1.20eV$ were observed for the AlOx and the SiNx regions, respectively. We conclude that the intermixing effect of the InGaAs QD region under an AlOx layer is stronger than that of the InGaAs QD region under a non-oxided AlAs layer.

• The korean journal of orthodontics
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• v.51 no.5
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• pp.313-320
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• 2021

Objective: The purpose of this study was to evaluate the effects of chewing gum and low-level laser therapy in alleviating orthodontic pain induced by the initial archwire. Methods: Patients with 3-6 mm maxillary crowding who planned to receive non-extraction orthodontic treatment were recruited for the study. Sixty-three participants (33 females and 30 males) were randomly allocated into three groups: laser, chewing gum, and control. In the laser group, a gallium aluminum arsenide (GaAlAs) diode laser with a wavelength of 820 nm was used to apply a single dose immediately after orthodontic treatment began. In the chewing gum group, sugar-free gum was chewed three times for 20 minutes-immediately after starting treatment, and at the twenty-fourth and forty-eighth hours of treatment. Pain perception was measured using a visual analog scale at the second, sixth, and twenty-fourth hours, and on the second, third, and seventh days. Results: There were no statistically significant differences between the groups at any measured time point (p > 0.05). The highest pain scores were detected at the twenty-fourth hour of treatment in all groups. Conclusions: Within the limitations of the study, we could not detect whether low-level laser therapy and chewing gum had any clinically significant effect on orthodontic pain. Different results may be obtained with a higher number of participants or using lasers with different wavelengths and specifications. Although the study had a sufficient number of participants according to statistical analysis, higher number of participants could have provided more definitive outcomes.

• Journal of the Optical Society of Korea
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• v.11 no.4
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• pp.162-172
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• 2007

Scanning Laser Optical Tweezers(SLOT) is an optical instrument frequently employed on a microscope with laser being delivered through its various ports. In most SLOT systems, a mechanical tilt stage with a mirror on top is used to dynamically move the laser focal point in two-dimensions. The focal point acts as a tweezing spot, trapping nearby microscopic objects. By adding a mechanical translational stage with a lens, SLOT can be expanded to work in three-dimensions. When two mechanical stages operate together, the focal point can address a closed three-dimensional volume that we call a workspace. It would be advantageous to have a large workspace since it means one can trap and work on multiple objects without interruptions, such as translating the microscope stage. However, previous studies have paid less consideration of the volumetric size of the workspace. In this paper, we propose a new method for designing a SLOT such that its workspace is maximized through optimization. The proposed method utilizes a matrix based ray tracing method and genetic algorithm(GA). To demonstrate the performance of the proposed method, experimental results are shown.

• Korean Journal of Optics and Photonics
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• v.24 no.5
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• pp.224-230
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• 2013

Laser Lift-Off (LLO) is a process that removes a GaN or AIN thin layer from a sapphire wafer to manufacture vertical-type LEDs. It consists of a light source, an attenuator, a mask, a projection lens and a beam homogenizer. In this paper, we design an attenuator and a projection lens. We use the 'ZEMAX' optical design software for analysis of depth of focus and for a projection lens design which makes $7{\times}7mm^2$ beam size by projecting a beam on a wafer. Using the 'LightTools' lighting design software, we analyze the size and uniformity of the beam projected by the projection lens on the wafer. The performance analysis found that the size of the square-shaped beam is $6.97{\times}6.96mm^2$, with 91.8 % uniformity and ${\pm}30{\mu}m$ focus depth. In addition, this study performs dielectric coating using the 'Essential Macleod' to increase the transmittance of an attenuator. As a result, for 23 layers of thin films, the transmittance total has 10-96% at angle of incidence $45-60^{\circ}$ in S-polarization.

• Journal of the Korean Vacuum Society
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• v.7 no.1
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• pp.66-71
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• 1998

Two kinds of $Ga_2S_3:Er$ (type A and type B) single crystals were grown by the chemical transport reaction method using iodine as a transport agent. The single crystals were crystallized into a monoclinic structure. The optical energy band gaps were found to 3.375 eV for the $Ga_2S_3:Er$ (type A) single crystal and 3.365 eV fir the $Ga_2S_3:Er$ (type B) single crystal at 13K. When the $Ga_2S_3:Er$ (type A and type B) single crystals were excited by the 325 nm-line of a Cd-He laser, Photoluminescence spectra of the $Ga_2S_3:Er$ (type A) single crystal exhibited blue emission band peaked at 444 nm and green and red emission bands peaked at 518 nm and 690 nm. Pgitikynubescebce soectra if the $Ga_2S_3:Er$ (typeB) single crystal showed green and red emission bands peaked at 513 nm and 695 nm. Sharp emission peaks in the two kinds if $Ga_2S_3:Er$ single crystal were observed near 525 nm, 553 nm, 664 nm, 812 nm, 986 nm, and 1540 nm and analysed as originating from the electron transitions between the energy levels of $Er^{3+}$ ion.