• Korean Journal of Acupuncture
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• 제28권2호
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• pp.37-47
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• 2011

Objectives : We have studied the effects of GaAlAs (808 nm) low level laser therapy (LLLT) and acupuncture at BL40 on neuropathic pain in rats induced by lumbar spinal nerve 5 ligation. Methods : To produce the model of neuropathic pain, under isoflurane 2.5% anesthesia, the lumbar spinal nerve 5 was ligated by 6-0 silk thread. After neuropathic surgery, we examined if the animals exhibited the behavioral sign of allodynia. The allodynia was assessed by stimulating the medial malleolus with von Frey filament and acetone. Three weeks after the neuropathic surgery, GaAlAs (808 nm) low level laser and acupuncture was inserted at BL40 once a day for 6 days. We examined the withdrawal response of neuropathic rats' legs by von Frey filament and acetone stimulation. And also the author examined c-Fos, nociceptin and nociceptin receptor in the midbrain central gray of neuropathic rats. Results : The GaAlAs (808 nm) low level laser therapy and acupuncture at BL40 decreased the withdrawal response of mechanical allodynia that assessed with von Frey filament in LLLT group on 5 and 6 times and with acetone in AT group and LLLT on 6times. The LLLT and acupuncture at BL40 decreased the c-Fos protein expression in AT and LLLT groups. The 808 nm LLLT and acupuncture at BL40 decreased the nociceptin protein and nociceptin receptor protein in LLLT group. Conclusions : We have noticed that GaAlAs (808 nm) LLLT and acupuncture at BL40 decreased mechanical allodynia in the model of neuropathic pain. c-Fos, nociceptin and nociceptin receptor expression in the central gray of that group was also decreased. This study can be used as a basic resource on a study and a treatment of pain.

• 한국광학회:학술대회논문집
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• 한국광학회 1989년도 제4회 파동 및 레이저 학술발표회 4th Conference on Waves and lasers 논문집 - 한국광학회
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• pp.210-213
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• 1989

An early phase of the OMVPE and LACVD studies of growing AlGaAs/GaAs films is reported. The AlGaAs/GaAs epitaxy to the level of obtaining MOW structures is a crucial step for the fabrication of the devices such as SEED and/or DOES which are basic parts of the OEIC. The analysis of the OMVPE system is shown for this purpose and the basic results of the LACVD are also presented.

• 한국전문물리치료학회지
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• 제5권2호
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• pp.1-14
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• 1998

This study was conducted to examine the increasing effects of Ga-As-Al laser Koryo-hand acupuncture on experimental pressure threshold. Forty healthy subjects (female=20. male=20) aged 21 to 30 years were randomly assigned to two treatment groups with same ratio in sex. The subjects in the experimental group (n=20) received Ga-As-Al laser stimulation, and those in the control group (n=20) received sham stimulation on appropriate Koryo-hand acupuncture points M10 on the left hand which is reflex point of upper trapezius portion. Experimental pressure threshold at the contralateral upper trapezius was determined with a pressure algometer and Galvanic Skin Response (GSR) before and after treatment. The change of pressure threshold between pretreatment and posttreatment in the experimental group was greater than that in the control group (p<0.05). The result indicates that Ga-As-Al laser Koryo-hand acupuncture increases experimental pressure threshold and suggests that it is an effective noninvasive pain management technique.

• 한국광학회지
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• 제15권4호
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• pp.309-312
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• 2004

레이저 홀로그래피 방법과 반응성 이온식각 방법(RIE: reactive ion etching)을 사용하여 2차원 광자결정을 제작하였다. 육변형(hexagonal) 및 사변형(square) 광자결정 격자는 첫 번째 레이저 노광 후 시편을 각각 60도 및 90도 회전하고 다시 두 번째 노광을 통하여 제작할 수 있었다. 또한 사변형 광자결정 격자의 나노컬럼(nanocolumn)의 크기와 주기는 레이저 입사각에 따라 각각 125∼145 nm, 220∼290 nm로 미세한 조정이 가능하였다. 마지막으로 CH$_4$/H$_2$ 가스를 이용한 반응성 이온식각 방법을 통하여 aspect ratio가 1.5 이상인 InP/InGaAsP nanocolumn을 제작 할 수 있었다.

• 한국광학회지
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• 제5권1호
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• pp.100-105
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• 1994

Littrow형 회절격자를 이용한 확장공진기를 657 nm 영역에서 연속동작하는 상용 InGaAsP 단일모우드 가시광 반도체를 이용하여 구성하였다. 제작한 확장공진기 시스템에서 657 nm InGaAsP 가시광 반도체 레이저의 선폭은 60 MHz에서 10 MHz 이하로 축소되었다. Littrow 회절격자의 설치각도와 레이저의 온도 및 주입 전류에 대한 반도체레이저의 주파수(파장) 의존성을 레이저 파장계를 이용하여 측정하였다. 상용 CQL820D 가시광 반도체레이저의 회절격자의 설치각도, 레이저 온도 및 주입전류에 대한 비례계수는 각각 1THz/mrad, 32.4 GHz/K, 그리고 6.14 GHz/mA 이었다.

• 한국레이저가공학회지
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• 제8권3호
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• pp.5-10
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• 2005

[ $InxGa_{1-x}P/GaAs$ ] structures were grown by chemical beam epitaxy(CBE), Pure phosphine($PH_3$) gases were used as group V sources. for the group III sources, TEGa, TmIn were used. $InxGa_{1-x}P$ epilayer was grown on SI-GaAs substrate and has a 1-${\mu}m$ thick. We have investigated the characteristics of $InxGa_{1-x}P$ by the photoreflectance(PR) spectroscopy, The PR spectrum of $InxGa_{1-x}P$ shows third-derivative feature whose Peaks Provide energy gap. The energy gap of $InxGa_{1-x}P$ has deduced composition x. From temperature dependance of PR spectra, temperature coefficient is $dEg/dT=-3.773{\times}10^{-4}$ eV/K, and Varshni coefficients $\alpha$ and $\beta$ values obtained $4{\times}10^4$ eV/K and 267 K respectively. Also, interaction $\alpha$B was 19.4 meV using the Bose-Einstein temperature relation, and $\Theta$ value related the average phonon frequency were 101.4 K. In particular, shoulder peak related to defects observed in PR signal that measured in temperature 82 K.

• 한국소성가공학회:학술대회논문집
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• 한국소성가공학회 2007년도 춘계학술대회 논문집
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• pp.213-216
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• 2007

LGP (light guide plate) of LCD-BLU (Liquid Crystal Display - Back Light Unit) is one of the major components which affects the product quality of LCD. In the present study, the optical patterns of LGP(2.2") are manufactured by three different methods, namely, laser ablation, chemical etching and LiGA - reflow, respectively. The pattern surface images and roughness of mold and product were compared to check the optical characteristics. From the results of measurement the optical patterns fabricated by LiGA - reflow method showed the best geometric structure as intended in design and the lowest roughness among those.

• 한국레이저가공학회지
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• 제7권3호
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• pp.47-50
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• 2004

In this research, we investigated the characteristic of $ZnS_{0.24}Se_{0.76}/GaAs$ heterostructure by using photoreflectance sprctroscopy(PR). The oscillations observed above the 1.43 eV range were attributed Franze-Keldysh effect. The interface electric filed of $GaAs/ZnS_{0.24}Se_{0.76}\;is\;2.153{\times}104\;V/cm$.

• 대한물리치료과학회지
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• 제7권2호
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• pp.545-558
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• 2000

The present study was designed to investigate the effect of low power GaAsAl laser on Fos expression in the spinal cord induced by noxious mechanical stimulation. Noxious mechanical stimulation was applied to the right hind paw following 30min of low power laser treatment using different intensity and treatment point and the resulting Fos expression in the spinal cord dorsal horn was compared to that obtained in rats exposed only to the noxious mechanical stimulation. The results were summarized as follows: 1. In intact control rats, only a few Fos like immunoreactive(Fos-IR) neurons were evident in the lumbar spinal cord dorsal horn. Similarly, following prolonged inhalation anesthesia, Fos-IR neurons were absent in the dorsal horn of the lumbar spinal cord. In animals treated with noxious mechanical stimulation, neurons with nuclei exhibiting Fos immunostaining were distributied mainly in the medial half of ipsilateral laminae I-V at lumbar segments L3-5. These findings directly indicated that prolonged anesthesia used in this study did not affect the Fos expression in the spinal cord dorsal horn of intact animals and noxious mechanical stimulation treated animals. 2. In acupoint treated animals, 10mW of laser stimulation, not 3mW intensity, significantly reduced the number of Fos immunoreactive neurons in the spinal dorsal horn induced by noxious mechanical stimulation(P<.01). However, the supressive effect of low power laser stimulatin was not observed in 3m Wand 10m W of laser stimulation into non-acupoint. These data indicate that 10mW of low power laser stimulation into acupoint is capable of inhibiting the expression of Fos in the dorsal horn induced by noxious mechanical stimulation. In conclusion, these findings raise the possibility that low power laser stimulation into acupoint may be a promising alternative medicine therapy for the mechanical stimulation induced pain in the clinical field.

• 전자공학회논문지A
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• 제32A권11호
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• pp.29-34
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• 1995

Mirror coating is applied to laser facets to improve properties of edge emitting laser diodes. In this experiment, InGaAsP/GaAs high power laser diodes were studied with respect to different degrees of anti-reflective coating. Sputterred $Al_{2}$O$_{3}$ was used as the coating material and the HR coating was kept constant at 90%. Threshold current density, differential quantum efficiency, emission wavelength and the operating current at 500mW were measured for a range of AR coating and compared with theoretically calculated values; that showed good agreements. Precise wavelength control is important for laser diodes for solid state pumping because of small absorption bandwidth. In addition, since these lasers operate under CW condition, a lowest possible operating current for a given power is desired in order to minimize the heat produced. From the results of this experiment, we were able to obtain a optimum range of AR coatings for minimum operating current. The wavelength can be varied up to 4nm within this range.