GaAs계 OMVPE 및 Laser CVD System 연구

Studies of OMPVE and LACVD for GaAs semiconductors

  • 발행 : 1989.02.01

초록

An early phase of the OMVPE and LACVD studies of growing AlGaAs/GaAs films is reported. The AlGaAs/GaAs epitaxy to the level of obtaining MOW structures is a crucial step for the fabrication of the devices such as SEED and/or DOES which are basic parts of the OEIC. The analysis of the OMVPE system is shown for this purpose and the basic results of the LACVD are also presented.

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