• 전자공학회논문지A
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• 제32A권10호
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• pp.43-50
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• 1995

A laser diode(LD) structure consisting of a single 150$\AA$ $Al_{0.07}$Ga$_{0.93}$As quantum well active region operating at ${\lambda}$=809nm, cladded with an AlGaAs graded-index separate confinement heterostructure, has bes been grown by MOCVD. Temperature coefficient of wavelength is approximately 0.2nm $^{\circ}C$ for the diode. The active aperture consists of five emitters separated from each other by means of SiO$_{2}$ deposition and stripe formation, which creates insulating regions that channel the current to 100-$\mu$m-wide stripes placed on 450-$\mu$m centers. From a typical uncoated LD, the output power of 0.8W has been obtained at a 1$\mu$s, 1kHz pulsed current level of 2.0$\AA$, which results in about 64% external quantum efficiency. The threshold current density is 736A/cm$^{2}$ for the case of 500$\mu$m cavity length LD's. The measure of an internal quantum efficiency was 75.8% and the internal loss 4.83$cm^{-1}$ . Finally, 3.1W output power has been obtained at a 1$\mu$s, 1kHz pulsed current level of 9A from the 500$\mu$m-aperture LD array with 460-$\mu$m- cavity length.

• 대한한방소아과학회지
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• 제29권4호
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• pp.29-38
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• 2015

Objectives We aimed to identify the effectiveness of photobiomodulation using low level laser therapy (LLLT), light emitting diode (LED) and others on the growth of the length of the growth plate by reviewing literatures. Methods We searched literatures using PubMed, Science Direct, CINAHL, Korea Traditional Knowledge Portal (KTKP), Oriental Medicine Advanced Searching Integrated System (OASIS), China Knowledge Resource Integrated Database (CNKI), Japan Science and Technology Information Aggregator, Electronic (J STAGE), and Japan National Institute of Informatics Scholarly and Academic Information Navigator (CiNii) using the keywords "Growth plate" "Epiphyseal growth" "Epiphyseal plate" and "Laser", "light emitting diode (LED)", "near-infrared light", and "photobiomodulation". Search range included only original article which provided English abstract were selected. The search strategy contained no language limitation. Results A total 556 studies were found. Then, 551 were excluded by scanning titles and abstracts and finally 5 articles were selected. Five articles were RCTs using rodents. Two of the 5 articles used InGaAlP Laser (630-685 nm), and the other 3 articles used GaAlAs Laser (780, 820, and 870 nm) to investigated the effects of LLLT on the growth of the length of the epiphyseal cartilage and the number of chondrocytes and thickness of each zone of the epiphyseal cartilage. Two articles concluded that LLLT had a beneficial effect on the longitudinal growth of the growth plate. In growth of the epiphyseal plate, there were no significant differences in others. Conclusions It is might that LLLT influenced on the growth of epiphyseal plate by positive affect. However, further rigorous RCTs are warranted.

• 한국광학회지
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• 제5권3호
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• pp.394-403
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• 1994

외부 광귀환이 있는 레이저 다이오드의 혼돈특성에 관해 고찰하였다. Fabry-Perot 공진기 형태의 레이저에 외부 거울에 의한 광귀환을 가정하였으며 파장 $1.3{\mu}m$의 "InGaAsP" buried-hetero structure 레이저에 $1.3J_{th}$의 전류가 인가되었을 때를 모의전산 하였다. 광귀환계수 K의 증가량에 따라 다음의 네단계로 진화현상을 보이고 있다. (1)광귀환계수 K가 아주 작을 때는 시간이 지남에 따라 이완발진은 감쇄되고, 정상 상태에 도달하여 안정된 동작특성을 보인다. (2)K가 조금 증가하면 이완발진은 감쇄되지 않고 주기적인 발진을 유지하기 시작한다. (3)K가 더욱 증가하면 발진의 폭은 증가하고 발진형태의 주기는 길어진다. (4)K가 매우 증가하면 발진형태는 안정을 잃고 coherence collapse 상태에 도달한다.

• 대한전자공학회논문지
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• 제22권4호
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• pp.72-75
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• 1985

Double-heterostructure 구조의 1.3μm GalnAsP/lnP 웨이퍼를 LPE 기술로 성장시키고, 전면전극(broad contact)레이저 다이오드를 제작, 실온에서 펄스 발진시켜 전기적 및 광학적 특성을 조사하였다. 발진 개시전류는 2Amp. 이하, 발진개시전류밀도 3∼6 KAmp./㎠였으며, 파장 1.315μm에서 발진하는 것을 확인하였다.

• 한국광학회:학술대회논문집
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• 한국광학회 1999년도 제16회 광학 및 양자전자 학술발표회Proceedings of 16th Optics and Quantum Electronics Conference, 1999
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• pp.216-217
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• 1999

A tapered ridge mode laser diode with increased spot size is designed and analyzed . The mode evolution concept is applied to design the taper and the method does not require regrowth or multiple-step etching technique. Three-dimensional BPM results show that the designed taper can transfer more than 97% of the mode power in the active region to the expanded mode.

• Applied Microscopy
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• 제25권3호
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• pp.75-81
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• 1995

이상과 같은 실험에서 다음과 같은 사실을 요약할 수 있다. 1) ZnSSe/GaAs 에피층에는 많은 양의 적층결함과 전위 등의 결정결함이 존재하고 이들은 표면부 보다는 계면부에 더 많이 존재한다. 그러나 에피층은 기판과 pseudomorphic 성장을 이루고 있다. 2) ZnSSe/GaAs 계면에는 5nm 크기의 높이차가 나는 굴곡이 존재하며 ZnSe 버퍼 층에 관계없이 적층결함이 존재하고, 에피층 결정이 약간 기울어져서 므와레 줄무늬 패턴도 존재한다. 3) ZnSSe/GaAs 계면에는 성장 중에 S의 침투로 인한 <111>방향으로 피트가 형성되었음이 관찰되었고 이는 결함 생성 소스로 작용한다 4) 15nm 높이차가 나는 계면이 발견되었으나 기판과 정합을 이루고 있고 주변에는 적층결함도 존재하지 않는다. 그러나 미세한 므와레 줄무의형태가 존재하였다.

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2003년도 춘계학술대회 논문집
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• pp.925-928
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• 2003

In this paper, a precision measuring machine for large sized axial fans of cooling towers are developed. A laser sensor is used as a measuring device and aluminum profiles and stepping motors are engaged into the system as frame structure and driving devices respectively. 3-dimensional measuring data are compared to the design data to compute the distortion of the axial fans. Two distortions such as the axis of the fan and the airfoils along the axis are introduced to define the shape precision of axial fans. Genetic algorithm is used to solve the optimization problem during computing the distortion. Results of distortion are displayed 3 dimensionally in a solid-modeler as well as 2-D drawings to help users find it with case.

• Corrosion Science and Technology
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• 제9권2호
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• pp.74-80
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• 2010

For the purpose of applying a hot-dip Zn-6mass%Al-3mass%Mg alloy coated steel sheet (ZAM) to automotive body materials, a laboratory study of the general properties required for inner and outer panels of automotive bodies was performed. Even with only light coating weight, ZAM showed an excellent corrosion resistance in terms of both cosmetic and perforation corrosion compared to the currently used materials for automotive bodies, GI70 and GA45. In our study, it was confirmed that ZAM exhibits as good as or better properties than GI70 in terms of spot weldability and press formability. Furthermore, since the same corrosion resistance can be achieved with less coating weight by applying ZAM, laser weldability is better than GI and GA.

• 대한전자공학회논문지
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• 제23권6호
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• pp.780-788
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• 1986

1.3\ulcorner GaInAsP BH(Buried Heterostructure) lasers were fabricated on the p-InP substrate. Two step chemical etching processes and melt-back etching technique during 2nd epitaxy were used for BH active layer. BH laser had the threshold current, Ith, of 72mA(23\ulcorner), peak wavelength of 1.2937\ulcorner, nd of 10-20%, and To of 85K. They operated in single mode under pulse condition up to 1.4 Ith. CW(DC) operation was successfully performed at room temperature.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2006년도 제30회 학술논문발표회 초록집
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• pp.203-203
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• 2006