• Journal of the Korean Institute of Telematics and Electronics A
• /
• v.32A no.10
• /
• pp.43-50
• /
• 1995

A laser diode(LD) structure consisting of a single 150$\AA$ $Al_{0.07}$Ga$_{0.93}$As quantum well active region operating at ${\lambda}$=809nm, cladded with an AlGaAs graded-index separate confinement heterostructure, has bes been grown by MOCVD. Temperature coefficient of wavelength is approximately 0.2nm $^{\circ}C$ for the diode. The active aperture consists of five emitters separated from each other by means of SiO$_{2}$ deposition and stripe formation, which creates insulating regions that channel the current to 100-$\mu$m-wide stripes placed on 450-$\mu$m centers. From a typical uncoated LD, the output power of 0.8W has been obtained at a 1$\mu$s, 1kHz pulsed current level of 2.0$\AA$, which results in about 64% external quantum efficiency. The threshold current density is 736A/cm$^{2}$ for the case of 500$\mu$m cavity length LD's. The measure of an internal quantum efficiency was 75.8% and the internal loss 4.83$cm^{-1}$ . Finally, 3.1W output power has been obtained at a 1$\mu$s, 1kHz pulsed current level of 9A from the 500$\mu$m-aperture LD array with 460-$\mu$m- cavity length.

• The Journal of Pediatrics of Korean Medicine
• /
• v.29 no.4
• /
• pp.29-38
• /
• 2015

Objectives We aimed to identify the effectiveness of photobiomodulation using low level laser therapy (LLLT), light emitting diode (LED) and others on the growth of the length of the growth plate by reviewing literatures. Methods We searched literatures using PubMed, Science Direct, CINAHL, Korea Traditional Knowledge Portal (KTKP), Oriental Medicine Advanced Searching Integrated System (OASIS), China Knowledge Resource Integrated Database (CNKI), Japan Science and Technology Information Aggregator, Electronic (J STAGE), and Japan National Institute of Informatics Scholarly and Academic Information Navigator (CiNii) using the keywords "Growth plate" "Epiphyseal growth" "Epiphyseal plate" and "Laser", "light emitting diode (LED)", "near-infrared light", and "photobiomodulation". Search range included only original article which provided English abstract were selected. The search strategy contained no language limitation. Results A total 556 studies were found. Then, 551 were excluded by scanning titles and abstracts and finally 5 articles were selected. Five articles were RCTs using rodents. Two of the 5 articles used InGaAlP Laser (630-685 nm), and the other 3 articles used GaAlAs Laser (780, 820, and 870 nm) to investigated the effects of LLLT on the growth of the length of the epiphyseal cartilage and the number of chondrocytes and thickness of each zone of the epiphyseal cartilage. Two articles concluded that LLLT had a beneficial effect on the longitudinal growth of the growth plate. In growth of the epiphyseal plate, there were no significant differences in others. Conclusions It is might that LLLT influenced on the growth of epiphyseal plate by positive affect. However, further rigorous RCTs are warranted.

• Korean Journal of Optics and Photonics
• /
• v.5 no.3
• /
• pp.394-403
• /
• 1994

Chaos characteristics of laser diodes with external optical feedback is investigated. For a FabryPerot resonator laser, optical feedback by external mirror is assumed. The simulation is performed in such a way that a current of $1.3J_{th}$ is injected into the $1.3{\mu}m$wavelength "InGaAsP" buried hetero structure laser. With the increment of K, the system shows the evolution of four steps as follows: i) When the optical feedback coefficient K is very small, the relaxation oscillation is damped and the system reaches the steady state showing the stable operation characteristics. ii) As K increases a little bit, the relaxation oscillation is not damped any more and the system begins to maintain the periodic oscillation. iii) When K is increased further, the oscillation shows the larger amplitude and the long periodic length. iv) When K is increased very large, the system gets unstable and enters into the coherejlce collapse state. state.

• Journal of the Korean Institute of Telematics and Electronics
• /
• v.22 no.4
• /
• pp.72-75
• /
• 1985

1.3$\mu$m double-heterostructure GaInAsP/InP wafers have been grown by LPE and broad contact laser diodes have been fabricated. Electrical and optical characteristics of these lasers under pulsed lasing operation at room temperature are described. Typical threshold currents are below 2 Amp. corresponding to threshold current densities of 3 - 6 KAmp./$\textrm{cm}^2$ and peak lasing wavelength is shown to be at 1.315 $\mu$m.

• Proceedings of the Optical Society of Korea Conference
• /
• 1999.08a
• /
• pp.216-217
• /
• 1999

A tapered ridge mode laser diode with increased spot size is designed and analyzed . The mode evolution concept is applied to design the taper and the method does not require regrowth or multiple-step etching technique. Three-dimensional BPM results show that the designed taper can transfer more than 97% of the mode power in the active region to the expanded mode.

• Applied Microscopy
• /
• v.25 no.3
• /
• pp.75-81
• /
• 1995

The microstructural characterization of ternary $ZnS_{x}Se_{1-x}$(x=0.085) on GaAs(001) substrate grown up to $2{\mu}m\;at\;300^{\circ}C$ by molecular beam epitaxy(MBE) which has a single growth chamber was investigated by high resolution transmission electron microscope (HRTEM) working at 300 kV with point resolution of 0.18nm. The interface in the ZnSSe/GaAs specimen maintains a pseudomorphism with the substrate, but the epilayer has high density of stacking faults and moire fringes. The pits which had formed along <111> direction were found at the interface of ZnSSe/GaAs. The pits were responsible for producing defects in both epilayer and substrate. The wavy interface which has the difference of 15nm in height was found to maintain the pseudomorphism with the substrate and no stacking faults were found around the interface. However there exists faint and fine moire fringes in the epilayer near interface.

• Proceedings of the Korean Society of Precision Engineering Conference
• /
• 2003.06a
• /
• pp.925-928
• /
• 2003

In this paper, a precision measuring machine for large sized axial fans of cooling towers are developed. A laser sensor is used as a measuring device and aluminum profiles and stepping motors are engaged into the system as frame structure and driving devices respectively. 3-dimensional measuring data are compared to the design data to compute the distortion of the axial fans. Two distortions such as the axis of the fan and the airfoils along the axis are introduced to define the shape precision of axial fans. Genetic algorithm is used to solve the optimization problem during computing the distortion. Results of distortion are displayed 3 dimensionally in a solid-modeler as well as 2-D drawings to help users find it with case.

• Corrosion Science and Technology
• /
• v.9 no.2
• /
• pp.74-80
• /
• 2010

For the purpose of applying a hot-dip Zn-6mass%Al-3mass%Mg alloy coated steel sheet (ZAM) to automotive body materials, a laboratory study of the general properties required for inner and outer panels of automotive bodies was performed. Even with only light coating weight, ZAM showed an excellent corrosion resistance in terms of both cosmetic and perforation corrosion compared to the currently used materials for automotive bodies, GI70 and GA45. In our study, it was confirmed that ZAM exhibits as good as or better properties than GI70 in terms of spot weldability and press formability. Furthermore, since the same corrosion resistance can be achieved with less coating weight by applying ZAM, laser weldability is better than GI and GA.

• Journal of the Korean Institute of Telematics and Electronics
• /
• v.23 no.6
• /
• pp.780-788
• /
• 1986

1.3\ulcorner GaInAsP BH(Buried Heterostructure) lasers were fabricated on the p-InP substrate. Two step chemical etching processes and melt-back etching technique during 2nd epitaxy were used for BH active layer. BH laser had the threshold current, Ith, of 72mA(23\ulcorner), peak wavelength of 1.2937\ulcorner, nd of 10-20%, and To of 85K. They operated in single mode under pulse condition up to 1.4 Ith. CW(DC) operation was successfully performed at room temperature.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2006.02a
• /
• pp.203-203
• /
• 2006