• Title/Summary/Keyword: Ga substitution

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The substitution effect of Langasite $(La_3Ga$_5SiO_{14})$-type compound, $Ca_3TaGa_3Si_2O_{14}$ crystals on their synthesis and crystal growth (Langasite$(La_{3}Ga$_{5}SiO_{14})$-type 인 $Ca_{3}TaGa_{3}Si_{2}O_{14}$ 결정의 합성과 경정성장에서의 치환효과)

  • Young Suk Kim;Keun Ho Auh
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.11 no.6
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    • pp.285-289
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    • 2001
  • We investigated that each site was substituted by new chemical components in Langasite ($La_3Ga_5/SiO_{14}$)-type structure with superior piezoelectric characteristics than $La_3Ga_5/SiO_{14}$. In this study $Ca_3TaGa_5Si_{2}O_{14}$ was synthesized by soilid-state reaction and grown by the $\mu$-PD(micro-pilling-down)and Cz technique. Lattice parameter and chemical composition was investigated by XRD and EPMA respectively.

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Effects of sulfurization temperature and Cu/(In+Ga) ratio on Sulfur content in Cu(In,Ga)Se2 thin films (Sulfurization 온도와 Cu/(In+Ga) 비가 Cu(In,Ga)Se2 박막 내 S 함량에 미치는 영향)

  • Ko, Young Min;Kim, Ji Hye;Shin, Young Min;Chalapathy, R.B.V.;Ahn, Byung Tae
    • Current Photovoltaic Research
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    • v.3 no.1
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    • pp.27-31
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    • 2015
  • It is known that sulfide at the $Cu(In,Ga)Se_2$ ($CIGSe_2$) surface plays a positive role in $CIGSe_2$ solar cells. We investigated the substitution of S with Se on the $CIGSe_2$ surface in S atmosphere. We observed that the sulfur content in the $CIGSe_2$ films changed according to sulfurization temperature and Cu/(In+Ga) ratio. The sulfur content in the $CIGSe_2$ films increased with increasing the annealing temperature and Cu/(In+Ga) ratio. Also Cu migration toward the surface increased at higher temperature. Since high Cu concentration at the $CIGSe_2$ surface is detrimental role, it is necessary to reduce the S annealing temperature as low as $200^{\circ}C$. The cell performance was improved at $200^{\circ}C$ sulfurization.

Photoluminescence of ZnGa2O4-xMx:Mn2+ (M=S, Se) Thin Films

  • Yi, Soung-Soo
    • Transactions on Electrical and Electronic Materials
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    • v.4 no.6
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    • pp.13-16
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    • 2003
  • Mn-doped $ZnGa_{2}O_{4}$:$Mn^{2+}$ (M=S, Se) thin film phosphors have been grown using a pulsed laser deposition technique under various growth conditions. The structural characterization carr~ed out on a series of $ZnGa_{2}O_{4}$:$Mn^{2+}$ (M=S, Se) films grown on MgO(l00) substrates usmg Zn-rich ceramic targets. Oxygen pressure was varied from 50 to 200 mTorr and Zn/Ga ratio was the function of oxygen pressure. XRD patterns showed that the lattice constants of the $ZnGa_{2}O_{4}$:$Mn^{2+}$ (M=S, Se) thin film decrease with the substitution of sulfur and selenium for the oxygen in the $ZnGa_2O_4$. Measurements of photoluminescence (PL) properties of $ZnGa_{2}O_{4}$:$Mn^{2+}$ (M=S, Se) thin films have indicated that MgO(100) is one of the most promised substrates for the growth of high quality $ZnGa_2O_{4-x}M_{x}$:$Mn^{2+}$ (M=S, Se) thin films. In particular, the incorporation of Sulfur or Selenium into $ZnGa_2O_4$ lattice could induce a remarkable increase in the intensity of PL. The increasing of green emission intensity was observed with $ZnGa_2O_{3.925}Se_{0.075}:$Mn^{2+}$ and $ZnGa_2O_{3.925}S_{0.05}$:$Mn^{2+}$ films, whose brightness was increased by a factor of 3.1 and 1.4 in comparison with that of $ZnGa_{2}O_{4}$:$Mn^{2+}$ films, respectively. These phosphors may promise for application to the flat panel displays.

Preparation and Photoluminescence Properties of $Ba_{1-x}M_xGa_2S_4:Eu^{2+}$ (M = Ca, Sr) Phosphor

  • Yoo, Hyoung-Sun;Kim, Sung-Wook;Han, Ji-Yeon;Park, Bong-Je;Jeon, Duk-Young
    • 한국정보디스플레이학회:학술대회논문집
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    • 2008.10a
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    • pp.561-564
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    • 2008
  • $Ba_{1-x}M_xGa_2S_4:Eu^{2+}$ (M = Ca, Sr) phosphor was prepared for white light emitting diodes application. Photoluminescence (PL) emission and excitation bands were red-shifted with increase of Ca and Sr content due to the crystal field effect. Moreover, the PL intensity under 450 nm was increased by substitution of Ca and Sr.

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Development of Macrocyclic Ligands for Stable Radiometal Complexes (안정한 방사금속 착물을 위한 거대고리 리간드 개발)

  • Yoo, Jeong-Soo;Lee, Jae-Tae
    • The Korean Journal of Nuclear Medicine
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    • v.39 no.4
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    • pp.215-223
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    • 2005
  • Current interest in the regioselective N-functionalization of tetraazacycloalkanes (cyclen and cyclam) stems mainly from their complexes with radioactive metals for applications in diagnostic ($^{64}Cu,\;^{111}In,\;^{67}Ga$) and therapeutic ($^{90}Y$) medicine, and with paramagnetic ions for magnetic resonance imaging ($Gd^{+3}$). Selective methods for the N-substitution of cyclen and cyclam is a crucial step in most syntheses of cyclen and cyclam-based radiometal complexes and bifunctional chelating agents. In addition, mixing different pendent groups to give hetero-substituted cyclen derivatives would be advantageous in many applications for fine-tuning the compound's physical properties. So far, numerous approaches for the regioselective N-substitution of tetraazacycloalkanes and more specifically cyclen and cyclam are reported. Unfortunately, none of them are general and every strategy has its own strong points and drawbacks. Herein, we categorize numerous regioselective N-alkylation methods into three strategies, such as 1) direct substitution of the macrocycle, 2) introductiou of the functional groups prior to cyclization, and 3) protection/iunclionallrationideproteclion. Our discussion is also split into the methods of mono- and tri-functionalization and di-functionalizataion based on number of substituents. At the end, we describe new trials for the new macrocycles which iorm more stable metal complexes with various radiometals, and briefly mention the commercially available tetraazacycloalkanes which are used for the biconjugation of biomolecules.

Improving Electrochemical Properties of LiFePO4 by Doping with Gallium

  • Nguyen, Van Hiep;Park, Ju-Young;Gu, Hal-Bon
    • Transactions on Electrical and Electronic Materials
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    • v.15 no.6
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    • pp.320-323
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    • 2014
  • Ga-doped $LiFePO_4$ cathode materials were synthesized using a hydrothermal method. The microstructural characteristics and electrochemical performances were systematically investigated using field emission scanning electron microscopy, high-resolution X-ray diffraction, energy dispersive X-ray spectroscopy, charge-discharge cycling, cyclic voltammetry, and electrochemical impedance spectroscopy. Among the as-prepared samples, $LiFe_{0.96}Ga_{0.04}PO_4$ demonstrates the best electrochemical properties in terms of discharge capacity, electrochemical reversibility, and cycling performance with an initial discharge capacity of $125mAh\;g^{-1}$ and high lithium ion diffusion coefficient of $1.38{\times}10^{-14}cm^2s^{-1}$ (whereas for $LiFePO_4$, these were $113mAh\;g^{-1}$ and $8.09{\times}10^{-15}cm^2\;s^{-1}$, respectively). The improved electrochemical performance can be attributed to the facilitation of Li+ ion effective diffusion induced by $Ga^{3+}$ substitution.

Hydrogen Absorption Properties of Zr-V-M(M=Fe, Ga, Y) Getter Alloys (Zr-V-M(M=Fe, Ga, Y)게터합금의 수소 흡수특성)

  • Park Je-Shin;Suh Chang-Youl;Kim Won-Baek
    • Korean Journal of Materials Research
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    • v.15 no.6
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    • pp.388-392
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    • 2005
  • The $Zr_{57}V_{36}M_7$ getter alloy was prepared by Fe substituting Ga or Y for Fe on $Zr_{57}V_{36}M_7$ getter alloy(St707), and the activation temperatures and the hydrogen a sorption speeds of these alloys were investigated. The activation temperatures of these alloys were estimated from the ultimate pressure-temperature curve and lowered about $100\~200\;K$ compared to $Zr_{57}V_{36}M_7$, fetter alloy(St707). However, final pressures at fully activated temperature were increased with substitution of Fe by Ga and Y on $Zr_{57}V_{36}M_7$ getter alloy. The hydrogen sorption speeds of these alloys measured by an orifice method were decreased about $0.460\~0.586liter/sec$ g compared to $Zr_{57}V_{36}M_7$ getter alloy.

Effects of Ga Substitution on Crystallographic and Magnetic Properties of Co Ferrites

  • Chae, Kwang Pyo;Choi, Won-Ok;Kang, Byung-Sub;Lee, Young Bae
    • Journal of Magnetics
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    • v.20 no.1
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    • pp.26-30
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    • 2015
  • The crystallographic and magnetic properties of gallium-substituted cobalt ferrite ($CoGa_xFe_{2-x}O_4$) were investigated. The new material was synthesized using conventional ceramic methods, with gallium substituted for ferrite in the range of x = 0.0 to 1.0, in steps of 0.2. X-ray diffraction and M$\ddot{o}$ssbauer spectroscopy were used to confirm the presence of crystallized particles in the $CoGa_xFe_{2-x}O_4$ ferrite powders. All of the samples exhibited a single phase with a spinel structure, and the lattice parameters decreased as the gallium content increased. The particle size of the samples also decreased as gallium increased. For $x{\leq}0.4$, the M$\ddot{o}$ssbauer spectra of $CoGa_xFe_{2-x}O_4$ could be fitted with two Zeeman sextets, which are the typical spinel ferrite spectra of $Fe^{3+}$ with A- and B-sites. However, for $x{\geq}0.6$, the M$\ddot{o}$ssbauer spectra could be fitted with two Zeeman sextets and one doublet. The variation in the M$\ddot{o}$ssbauer parameters and the absorption area ratio indicated a cation distribution of $(Co_{0.2-0.2x}Ga_xFe_{0.8-0.6x})[Co_{0.8+0.2x}Fe_{1.2-0.4x}]O_4$, and the magnetic behavior of the samples suggested that the increase in gallium content led to a decrease in the saturation magnetization and in the coercivity.