• Title/Summary/Keyword: GI thickness

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Effects of Fast Treadmill Training on Spinal Alignment and Muscles Thickness

  • Kim, Won-Gi;Kim, Yong-Seong;Kim, Yong-Beom;Jeong, Ho-Jin;Kim, Jae-Woon;Cho, Woon-Su
    • The Journal of Korean Physical Therapy
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    • v.29 no.4
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    • pp.175-180
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    • 2017
  • Purpose: This study examined the effects of fast walking training on a treadmill on the spinal alignment and muscle thickness of normal adults. Methods: A total of 36 college students in their twenties participated in the study for eight weeks, and they were divided into the normal walking, fast walking, and speed change groups. All the groups were measured in a pre-test before training. The subjects performed exercise three times per week for six weeks. A post-test was conducted six weeks after training began, and a follow-up test was done two weeks after the training ended.Trunk and pelvic tilts were measured in Formetric 4D for the spinal alignment of the subjects. The muscle thickness was examined in the trunk with an ultrasound test. Repeated-measures ANOVA was conducted to test the main effects and interactions among the measurement variables according to time and group. Results: Significant differences were observed in the pelvic tilt according to time. There were significant differences in the external oblique, internal oblique, transverse abdominal muscle according to time. The post-test results showed significant differences in the left external oblique, internal oblique muscles between before training, six weeks into training, and two weeks after the completion of training. There were significant interactions in the left oblique muscles according to the time and group. Conclusion: These findings have some value for patient rehabilitation and clinical applications and interventions through walking training.

Microanatomy and Histological Features of Central Myelin in the Root Exit Zone of Facial Nerve

  • Yee, Gi-Taek;Yoo, Chan-Jong;Han, Seong-Rok;Choi, Chan-Young
    • Journal of Korean Neurosurgical Society
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    • v.55 no.5
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    • pp.244-247
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    • 2014
  • Objective : The aim of this study was to evaluate the microanatomy and histological features of the central myelin in the root exit zone of facial nerve. Methods : Forty facial nerves with brain stem were obtained from 20 formalin fixed cadavers. Among them 17 facial nerves were ruined during preparation and 23 root entry zone (REZ) of facial nerves could be examined. The length of medial REZ, from detach point of facial nerve at the brain stem to transitional area, and the thickness of glial membrane of central myelin was measured. We cut brain stem along the facial nerve and made a tissue block of facial nerve REZ. Each tissue block was embedded with paraffin and serially sectioned. Slices were stained with hematoxylin and eosin (H&E), periodic acid-Schiff, and glial fibrillary acid protein. Microscopy was used to measure the extent of central myelin and thickness of outer glial membrane of central myelin. Thickness of glial membrane was examined at two different points, the thickest area of proximal and distal REZ. Results : Special stain with PAS and GFAP could be differentiated the central and peripheral myelin of facial nerve. The length of medial REZ was mean 2.6 mm (1.6-3.5 mm). The glial limiting membrane of brain stem is continued to the end of central myelin. We called it glial sheath of REZ. The thickness of glial sheath was mean $66.5{\mu}m(40-110{\mu}m$) at proximal REZ and $7.4{\mu}m(5-10{\mu}m$) at distal REZ. Conclusion : Medial REZ of facial nerve is mean 2.6 mm in length and covered by glial sheath continued from glial limiting membrane of brain stem. Glial sheath of central myelin tends to become thin toward transitional zone.

Nonlinear Analysis of Functionally Graded Materials Plates and Shells (점진기능재료(FGM) 판과 쉘의 비선형 해석)

  • Han, Sung-Cheon;Lee, Chang-Soo;Kim, Gi-Dong;Park, Weon-Tae
    • Journal of the Korean Society of Hazard Mitigation
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    • v.7 no.5
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    • pp.61-71
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    • 2007
  • Navier's and Finite element solutions based on the first-order shear deformation theory are presented for the analysis of through-thickness functionally graded plates and shells. The functionally graded materials are considered: a sigmoid function is utilized for the mechanical properties through the thickness of the isotropic structure which varies smoothly through the plate and shell thickness. The formulation of a nonlinear 9-node Element-based Lagrangian shell element is presented for the geometrically nonlinear analysis. Natural-coordinate-based strains are used in present shell element. Numerical results of the linear and nonlinear analysis are presented to show the effect of the different top/bottom elastic modulus, loading conditions, aspect ratios and side-to-thickness ratios on the mechanical behaviors. Besides, the result according to the variation of the power-law index of isotropic functionally graded structures is investigated.

Low voltage operating $InGaZnO_4$ thin film transistors using high-k $MgO_{0.3}BST_{0.7}$ gate dielectric (고유전 $MgO_{0.3}BST_{0.7}$ 게이트 절연막을 이용한 $InGaZnO_4$ 기반의 트랜지스터의 저전압 구동 특성 연구)

  • Kim, Dong-Hun;Cho, Nam-Gyu;Chang, Young-Eun;Kim, Ho-Gi;Kim, Il-Doo
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2008.11a
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    • pp.40-40
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    • 2008
  • $InGaZnO_4$ based thin film transistors (TFTs) are of interest for large area and low cost electronics. The TFTs have strong potential for application in flat panel displays and portable electronics due to their high field effect mobility, high on/off current ratios, and high optical transparency. The application of such room temperature processed transistors, however, is often limited by the operation voltage and long-tenn stability. Therefore, attaining an optimum thickness is necessary. We investigated the thickness dependence of a room temperature grown $MgO_{0.3}BST_{0.7}$ composite gate dielectric and an $InGaZnO_4$ (IGZO) active semiconductor on the electrical characteristics of thin film transistors fabricated on a polyethylene terephthalate (PET) substrate. The TFT characteristics were changed markedly with variation of the gate dielectric and semiconductor thickness. The optimum gate dielectric and active semiconductor thickness were 300 nm and 30 nm, respectively. The TFT showed low operating voltage of less than 4 V, field effect mobility of 21.34 cm2/$V{\cdot}s$, an on/off ratio of $8.27\times10^6$, threshold voltage of 2.2 V, and a subthreshold swing of 0.42 V/dec.

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Bow Reduction in Thin Crystalline Silicon Solar Cell with Control of Rear Aluminum Layer Thickness (박형 결정질 실리콘 태양전지에서의 휨현상 감소를 위한 알루미늄층 두께 조절)

  • Baek, Tae-Hyeon;Hong, Ji-Hwa;Lim, Kee-Joe;Kang, Gi-Hwan;Yu, Gwon-Jong;Song, Hee-Eun
    • 한국태양에너지학회:학술대회논문집
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    • 2012.03a
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    • pp.108-112
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    • 2012
  • Crystalline silicon solar cell remains the major player in the photovoltaic marketplace with 90 % of the market, despite the development of a variety of thin film technologies. Silicon's excellent efficiency, stability, material abundance and low toxicity have helped to maintain its position of dominance. However, the cost of silicon photovoltaic remains a major barrier to reducing the cost of silicon photovoltaics. Using the crystalline silicon wafer with thinner thickness is the promising way for cost and material reduction in the solar cell production. However, the thinner thickness of silicon wafer is, the worse bow phenomenon is induced. The bow phenomenon is observed when two or more layers of materials of different temperature expansion coefficiencies are in contact, in this case silicon and aluminum. In this paper, the solar cells were fabricated with different thicknesses of Al layer in order to reduce the bow phenomenon. With lower paste applications, we observed that the bow could be reduced by up to 40% of the largest value with 130 micron thickness of the wafer even though the conversion efficiency decrease of 0.5 % occurred. Since the bowed wafers lead to unacceptable yield losses during the module construction, the reduction of bow is indispensable on thin crystalline silicon solar cell. In this work, we have studied on the counterbalance between the bow and conversion efficiency and also suggest the formation of enough back surface field (BSF) with thinner Al paste application.

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Tribology Coating Study of Thick DLC (ta-C) Film (DLC (ta-C) 후막코팅을 위한 트라이볼로지 코팅 연구)

  • Jang, Young-Jun;Kang, Yong-Jin;Kim, Gi Taek;Kim, Jongkuk
    • Tribology and Lubricants
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    • v.32 no.4
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    • pp.125-131
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    • 2016
  • In recent years, thick ta-C coating has attracted considerable interest owing to its existing and potential commercial importance in applications such as automobile accessories, drills, and gears. The thickness of the ta-C coating is an important parameter in these applications. However, the biggest problems are achieving efficient coating and uniformity over a large area with high-speed deposition. Feasibility is confirmed for the ta-C coating thickness of up to 9.0 µm (coating speed: 3.0 µm/h, fixed substrate) using a single FCVA cathode. The thickness was determined using multiple coating cycles that were controlled using substrate temperature and residual stresses. In the present research, we have designed a coating system using FCVA plasma and produced enhanced thick ta-C coating. The system uses a specialized magnetic field configuration with stabilized DC arc plasma discharge during deposition. To achieve quality that is acceptable for use in automobile accessories, the magnetic field, T-type filters, and 10 pieces of a multi-cathode are used to demonstrate the deposition of the thick ta-C coating. The results of coating performance indicate that uniformity is ±7.6 , deposited area is 400 mm, and the thickness of the ta-C coating is up to 5.0 µm (coating speed: 0.3 µm/h, revolution and rotation). The hardness of the coating ranges from 30 to 59 GPa, and the adhesion strength level (HF1) ranges from 20 to 60 N, depending on the ta-C coating.

The Structural and Optical Properties of GaAs- SiO2 Composite Thin Films With Varying GaAs Nano-particle Size (GaAs 나노입자 크기에 따른 SiO2 혼합박막의 구조적 광학적 특성)

  • Lee, Seong-Hun;Kim, Won-Mok;Sin, Dong-Uk;Jo, Seong-Hun;Jeong, Byeong-Gi;Lee, Taek-Seong;Lee, Gyeong-Seok
    • Korean Journal of Materials Research
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    • v.12 no.4
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    • pp.296-303
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    • 2002
  • For potential application to quantum mechanical devices, nano-composite thin films, consisting of GaAs quantum dots dispersed in SiO$_2$ glass matrix, were fabricated and studied in terms of structural, chemical, and optical properties. In order to form crystalline GaAs quantum dots at room temperature, uniformly dispersed in $SiO_2$matrix, the composite films were made to consist of alternating layers of GaAs and $SiO_2$in the manner of a superlattice using RF magnetron sputter deposition. Among different film samples, nominal thickness of an individual GaAs layer was varied with a total GaAs volume fraction fixed. From images of High Resolution Transmission Electron Microscopy (HRTEM), the formation of GaAs quantum dots on SiO$_2$was shown to depend on GaAs nominal thickness. GaAs deposits were crystalline and GaAs compound-like chemically according to HRTEM and XPS analysis, respectively. From measurement of optical absorbance using a spectrophotometer, absorption edges were determined and compared among composite films of varying GaAs nominal thicknesses. A progressively larger shift of absorption edge was noticed toward a blue wavelength with decreasing GaAs nominal thickness, i.e. quantum dots size. Band gaps of the composite films were also determined from Tauc plots as well as from PL measurements, displaying a linear decrease with increasing GaAs nominal thickness.

Genome-Wide Association Studies Associated with Backfat Thickness in Landrace and Yorkshire Pigs

  • Lee, Young-Sup;Shin, Donghyun
    • Genomics & Informatics
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    • v.16 no.3
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    • pp.59-64
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    • 2018
  • Although pork quality traits are important commercially, genome-wide association studies (GWASs) have not well considered Landrace and Yorkshire pigs worldwide. Landrace and Yorkshire pigs are important pork-providing breeds. Although quantitative trait loci of pigs are well-developed, significant genes in GWASs of pigs in Korea must be studied. Through a GWAS using the PLINK program, study of the significant genes in Korean pigs was performed. We conducted a GWAS and surveyed the gene ontology (GO) terms associated with the backfat thickness (BF) trait of these pigs. We included the breed information (Yorkshire and Landrace pigs) as a covariate. The significant genes after false discovery rate (<0.01) correction were AFG1L, SCAI, RIMS1, and SPDEF. The major GO terms for the top 5% of genes were related to neuronal genes, cell morphogenesis and actin cytoskeleton organization. The neuronal genes were previously reported as being associated with backfat thickness. However, the genes in our results were novel, and they included ZNF280D, BAIAP2, LRTM2, GABRA5, PCDH15, HERC1, DTNBP1, SLIT2, TRAPPC9, NGFR, APBB2, RBPJ, and ABL2. These novel genes might have roles in important cellular and physiological functions related to BF accumulation. The genes related to cell morphogenesis were NOX4, MKLN1, ZNF280D, BAIAP2, DNAAF1, LRTM2, PCDH15, NGFR, RBPJ, MYH9, APBB2, DTNBP1, TRIM62, and SLIT2. The genes that belonged to actin cytoskeleton organization were MKLN1, BAIAP2, PCDH15, BCAS3, MYH9, DTNBP1, ABL2, ADD2, and SLIT2.

The Correlation Between Forward Head Position and Neck Flexor Thickness During Cranio-Cervical Flexion Exercise (머리-목굽힘 운동 시 앞쪽머리자세와 목굽힘근 근두께 간의 상관성 연구)

  • Lee, Ji-Min;Yu, Jun-Su;Lim, Ji-Eun;Lee, Hyun-Ah;Moon, Sung-Gi;Jang, Hyun-Jeong
    • The Journal of Korean Academy of Orthopedic Manual Physical Therapy
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    • v.20 no.1
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    • pp.1-7
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    • 2014
  • Background: As the increase of forward head position, we studied the change of thickness of deep cervical flexor (DCF) compared of with sternocleidomastoid (SCM). we measured and analysed the change of thickness of the neck flexor for forward head position and cranio-cervical flexion exercise (CCFE). Methods: Using a cross-sectional design, we conducted the study selecting 35 healthy adults (12 males, 23 females). We measured the craniovertebral angle (CVA), instructed them to perform the CCFE, and measured the DCF and SCM using ultrasonography during the contraction and relaxation period. Results: Intra-reliability of SCM is .96, longus capitis is .92 and longus coli is .97. we compared according to the change of forward head position, Correlation of DCF is .841, and DCF/SCM is .754 by significant positive correlation. At the comparison of CCFE and Resting muscle thickness, SCM and DCF is .00, DCF/SCM is .68. Conclusion: There is a strong positive correlation between the change amount of DCF and DCF/SCM as the increase of CVA.

Photocatalytic Efficiency of $TiO_2$Thin Films by Spin-coating (Spin-coating법에 의한 $TiO_2$의 광촉매 효율)

  • Kim, Beom-Jun;Byeon, Dong-Jin;Lee, Jung-Gi;Park, Dal-Geun
    • Korean Journal of Materials Research
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    • v.10 no.4
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    • pp.264-269
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    • 2000
  • TiO$_2$thin films were prepared on the glass by a conventional spin coating method with $TiO_2$ sol(30wt%, anatase). The thickness of the thin films were controlled by the number of coating cycles: one cycle is composed of spin coating, drying, and heating process. The reaction rate of the film was obtained by the photodecomposition of gaseous benzene under 0.44 and 2.0mW/$\textrm{cm}^2$ UV light on the film surface. For an incident UV light intensity of 0.44mW/$\textrm{cm}^2$, the reaction rate was increased with the thickness of the film, caused by extent of surface area, but there was no change over the thickness of about 4$\mu\textrm{m}$. The porous $TiO_2$ thin film has comparatively vast effective surface area, which under relatively high-intensity UV illumination causes the reaction rate to be controlled by the film thickness.

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