• Journal of the Korean Crystal Growth and Crystal Technology
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• v.11 no.1
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• pp.20-26
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• 2001

Titanium boride ($\textrn{TiB}_{x}$) films were deposited on (100) silicon substrates at the substrate temperature of $500^{\circ}C$ by means of the co-evaporation of titanium and boron evaporants during deposition. The co-evaporation method makes it possible to deposit the non-stoichiometric films with different boron-to-titanium ratio($0{\le}B/Ti \le 2.5$). The resistivity increases linearly as the boron-to-titanium ratio in the as-deposited films is increased. The surface roughness of $\textrn{TiB}_{x}$ films is changed as a function of the boron-to-titanium ratio. The XRD spectrum for pure titanium film shows a highly (002) preferred orientation. For B/Ti=0.59 ratio only a single TiB phase that shows a (111) preferred orientation is observed. However, the $\textrn{TiB}_{x}$ phase with the hexagonal structure of the $AlB_2$(C32) type appears as the boron concentration increase, and only a single $\textrn{TiB}_{x}$ phase is observed for $B/Ti \ge 2.0$ ratio. The $\textrn{TiB}_{x}$/Si samples reveal a tensile stress (3~$20{\times}^9$dyn/$\textrm{cm}^2$) in the overall composition of the films, although the magnitude of the residual stresses is depended on the nominal B/Ti ratio.

• IMMUNE NETWORK
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• v.6 no.3
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• pp.128-137
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• 2006

Background: Apoptosis is a physiologic phenomenon involved in development, elimination of damaged cells, and maintenance of cell homeostasis. Deregulation of apoptosis may cause diseases, such as cancers, immune diseases, and neurodegenerative disorders. The mouse myeloma cell P3-X63-Ag8.653 (v653) is an HGPRT deficient $(HGPRT^-)$ mutant strain. High dependency on de novo transcription and translation of aminopterin induced apoptosis of this cell seems to be an ideal experimental system for searching apoptosis-induced genes. Methods & Results: For searching apoptosis-related genes we carried out GE-array (dot blot), Affymetrix GeneChip analysis, Northern analysis and differential display-PCR techniques. The chip data were analyzed with three different programs. 66 genes were selected through Affymetrix GeneChip analyses. All genes selected were classified into 8 groups according to their known functions. They were Genes of 1) Cell growth/maintenance/death/enzyme, 2) Cell cycle, 3) Chaperone, 4) Cancer/disease-related genes, 5) Mitochondria, 6) Membrane protein/signal transduction, 7) Nuclear protein/nucleic acid binding/transcription binding and 8) Translation factor. Among these groups number of genes were the largest in the genes of cell growth/maintenance/death/enzyme. Expression signals of most of all groups were peaked at 3 hour of apoptosis except genes of Nuclear protein/nucleic acid binding/transcription factor which showed maximum signal at 1 hour. Conclusion: This study showed induction of wide range of proapoptotic factors which accelerate cell death at various stage of cell death. In addition apoptosis studied in this research can be classified as a type 2 which involves cytochrome c and caspase 9 especially in early stages of death. But It also has progressed to type 1 in late stage of the death process.

• Electrical & Electronic Materials
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• v.11 no.11
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• pp.9-17
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• 1998

The dependence of the ionic conductivity on the B-site ion substitution in (Li0.5La0.5)Ti1-xMxO3 (M=Sn, Zr, Mn, Ge) system has been studied. Same valence state and various electronic configuration and ionic radius of Sn4+, Zr4+, Mn4+ and Ge4+(4d10(0.69$\AA$), 4p6(0.72$\AA$), 3d10(0.54$\AA$) and 3d3(0.54$\AA$), respectively) induced the various crystallographic variaton with substitutions. So it was possibleto investigate the crystallographic factor which influence the ionic conduction by observing the dependence of the conductivity on the crystallographic factor which influence the ionic conduction by observing the dependence of the conductivity on the crystallographic variations. We found that the conductivity increased with decreasing the radii of B-site ions or vice versa and octahedron distortion disturb the ion conduction. The reason for this reciprocal proportion of conductivity on the radius of B-site ions has been examined on the base of the interatomic bond strength change due to the cation substitutions. The results were good in agreement with the experimental results. Therefore it could be concluded that the interatomic bond strength change due to the cation substitutions may be the one of major factors influencing the lithium ion conductivity in perovskite(Li0.5La0.5) TiO3system.

• Proceedings of the Ginseng society Conference
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• 1998.06a
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• pp.71-82
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• 1998

The first original inducer of interferon had been synthesized in Russia in 1965-1967. It was 2-car-boxiethyl-germanysesquioxan (Lx-13) and other-1 hydroxigermanytrans-monohydral (Lx-5), These compounds have very high induct$\circledcirc$on of interferon. The strain of Panax ginseng C. A. Meyer was recultivated on medium with different concentiation of (Lx-13) and (Lx-5) many times. The strain was stabilized when biomass of cells contain of the Ge form 10${\times}$10-3mg% to 2.3x10-3mg% to ashes, Biomass are hard physical work (swimming test) and also had stress-protective, immunomodulating action and anticarcinogenic effect hampered the sarcoma-180 by 33-80% and suppressed quantity of metanes on 43-46%.

• Journal of Korean Society for Quality Management
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• v.25 no.3
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• pp.11-21
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• 1997

The mean residual life(MRL) function gives the expected remaining life of a item at age t. In particular F is said to be an increasing intially then decreasing MRL(IDMRL) distribution if there exists a turing point $t^*\ge0$ such that m(s)$\le$ m(t) for 0$$\le s$\le$ t $t^*$, m(s)$\ge$ m(t) for $t^*\le$ s$\le$ t. If the preceding inequality is reversed, F is said to be a decreasing initially then increasing MRL(DIMRL) distribution. Hawkins, et al.(1992) proposed test of H0 : F is exponential versus$H_1$: F is IDMRL, and $H_0$ versus $H_1$' : F is DIMRL when turning point is unknown. Their test is based on a complete random sample $X_1$, …, $X_n$ from F. In this paper, we generalized Hawkins-Kochar-Loader test to random censored data.

• Journal of Powder Materials
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• v.18 no.5
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• pp.449-455
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• 2011

In this study, p-type $(AgSbTe_2)_{15}(GeTe)_{85}$: TAGS-85 compound powders were prepared by gas atomization process, and then their microstructures and mechanical properties were investigated. The fabricated powders were of spherical shape, had clean surface, and illustrated fine microstructure and homogeneous $AgSbTe_2$ + GeTe solid solution. Powder X-ray diffraction results revealed that the crystal structure of the TAGS-85 sample was single rhombohedral GeTe phase, which with a space group $R_{3m}$. The grain size of the powder particles increased while the micro Vickers hardness decreased with increasing annealing temperature within the range of 573 K and 723 K due to grain growth and loss of Te. In addition, the crystal structure of the powder went through a phase transformation from rhombohedral ($R_{3m}$) at low-temperature to cubic ($F_{m-3m}$) at high-temperature with increasing annealing temperature. The micro Vickers hardness of the as-atomized powder was around 165 Hv, while it decreased gradually to 130 Hv after annealing at 673K, which is still higher than most other fabrication processes.

• Journal of Astronomy and Space Sciences
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• v.30 no.3
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• pp.127-132
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• 2013

Here we review the effort of Fermi Asian Network (FAN) in exploring the supernova remnants (SNRs) with state-of-art high energy observatories, including Fermi Gamma-ray Space Telescope and Chandra X-ray Observatory, in the period of 2011- 2012. Utilizing the data from Fermi LAT, we have discovered the GeV emission at the position of the Galactic SNR Kes 17 which provides evidence for the hadronic acceleration. Our study also sheds light on the propagation of cosmic rays from their acceleration site to the intersteller medium. We have also launched an identification campaign of SNR candidates in the Milky Way, in which a new SNR G308.3-1.4 have been uncovered with our Chandra observation. Apart from the remnant, we have also discovered an associated compact object at its center. The multiwavelength properties of this X-ray source suggest it can possibly be the compact binary that survived a supernova explosion.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.155.2-155.2
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• 2013

Strain-relaxed SiGe layer on Si substrate has numerous potential applications for electronic and opto- electronic devices. SiGe layer must have a high degree of strain relaxation and a low dislocation density. Conventionally, strain-relaxed SiGe on Si has been manufactured using compositionally graded buffers, in which very thick SiGe buffers of several micrometers are grown on a Si substrate with Ge composition increasing from the Si substrate to the surface. In this study, a new plasma process, i.e., the combination of PIII&D and HiPIMS, was adopted to implant Ge ions into Si wafer for direct formation of SiGe layer on Si substrate. Due to the high peak power density applied the Ge sputtering target during HiPIMS operation, a large fraction of sputtered Ge atoms is ionized. If the negative high voltage pulse applied to the sample stage in PIII&D system is synchronized with the pulsed Ge plasma, the ion implantation of Ge ions can be successfully accomplished. The PIII&D system for Ge ion implantation on Si (100) substrate was equipped with 3'-magnetron sputtering guns with Ge and Si target, which were operated with a HiPIMS pulsed-DC power supply. The sample stage with Si substrate was pulse-biased using a separate hard-tube pulser. During the implantation operation, HiPIMS pulse and substrate's negative bias pulse were synchronized at the same frequency of 50 Hz. The pulse voltage applied to the Ge sputtering target was -1200 V and the pulse width was 80 usec. While operating the Ge sputtering gun in HiPIMS mode, a pulse bias of -50 kV was applied to the Si substrate. The pulse width was 50 usec with a 30 usec delay time with respect to the HiPIMS pulse. Ge ion implantation process was performed for 30 min. to achieve approximately 20 % of Ge concentration in Si substrate. Right after Ge ion implantation, ~50 nm thick Si capping layer was deposited to prevent oxidation during subsequent RTA process at $1000^{\circ}C$ in N2 environment. The Ge-implanted Si samples were analyzed using Auger electron spectroscopy, High-resolution X-ray diffractometer, Raman spectroscopy, and Transmission electron microscopy to investigate the depth distribution, the degree of strain relaxation, and the crystalline structure, respectively. The analysis results showed that a strain-relaxed SiGe layer of ~100 nm thickness could be effectively formed on Si substrate by direct Ge ion implantation using the newly-developed PIII&D process for non-gaseous elements.

• Journal of Powder Materials
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• v.21 no.2
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• pp.137-141
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• 2014

In this study, we report the sintering behavior and properties of a $Ge_2Sb_2Te_5$ alloy powders for use as a sputtering target by spark plasma sintering. The effect of various sintering parameters, such as pressure, temperature and time, on the density and hardness of the target has been investigated in detail. Structural characterization was performed by scanning electron microscopy and X-ray diffraction. Hardness and thermal properties were measured by differential scanning calorimetry and micro-vickers hardness tester. The density and hardness of the sintered $Ge_2Sb_2Te_5$ materials were 5.8976~6.3687 $g/cm^3$ and 32~75 Hv, respectively.

• Bulletin of the Korean Chemical Society
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• v.21 no.11
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• pp.1090-1094
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• 2000

A reaction between germanium (Ge) and the ligand, o-chlorophenylfluorone (o-CPF) has been carried out. The reaction sensitive at pH 4.5 in the presence of triton x-100 was selective in the presence of EDTA. The spectral correction technique was ap plied to the analysis of the reaction instead of single wavelength spectrophotometry because the absorption of excess of o-CPF was not negligible. An updated determination of the properties of the Ge(IV)-o-CPF complex is given, which involved the complex ratio, stepwise absorptivity and stability constant of the complex. In present work, the results show that the complex $Ge(o-CPF)_3was$ formed and its cumulative stability constant was 1.09 ${\times}$1016 . For sample analysis, the detection limit of germanium was 0.01 mg/L, and the recoveries were between 96.4% and 102%, with relative standard deviations of less than 6.5%.