• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.3
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• pp.181-187
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• 1998

The ionization energy and degree of ionization for p-type $Si_{1-x}Ge_x$ with boron doping are calculated taking into account the screening and broadening effects. The drift and Hall mobilities are then calculated using the relaxation time approximation and compared with the previously reported measurement data for relaxed and strained $Si_{1-x}Ge_x$ alloys to estimate the alloy scattering potential. From a fit, the alloy scattering potential is found to be 0.5 eV. The in-plane drift mobility for p-type strained $Si_{1-x}Ge_x$ grown on (001) Si substrate is approximately 1+$10x^2$ times higher than that for bulk Si in the high doping range.

• Food Science of Animal Resources
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• v.36 no.6
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• pp.744-751
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• 2016

The objective of this study was to investigate the effects of partial beef fat replacement (0, 30, 50, 100%) with gelled emulsion (GE) prepared with olive oil on functional and quality properties of model system meat emulsion (MSME). GE consisted of inulin and gelatin as gelling agent and characteristics of gelled and model system meat emulsions were investigated. GE showed good initial stability against centrifugation forces and thermal stability at different temperatures. GE addition decreased the pH with respect to increase in GE concentration. Addition of GE increased lightness and yellowness but reduced redness compared to control samples. The results of the study showed that partial replacement of beef fat with GE could be used for improving cooking yield without negative effects on water holding capacity and emulsion stability compared to C samples when replacement level is up to 50%. The presence of GE significantly affected textural behaviors of samples (p<0.05). In conclusion, our study showed that GE have promising impacts on developing healthier meat product formulations besides improving technological characteristics.

• Korean Journal of Materials Research
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• v.10 no.12
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• pp.812-818
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• 2000

We studied the effects of Ge preamorphization (PAM) on 0.25$\mu\textrm{m}$ Ti-salicide junctions using comparative study with As PAM. For each PAM schemes, ion implantations are performed at a dose of 2E14 ion/$\textrm{cm}^2$ and at 20keV energy using $^{75}$ /As+and GeF4 ion sources. Ge PAM showed better sheet resistance and within- wafer uniformity than those of As PAM at 0.257m line width of n +/p-well junctions. This attributes to enhanced C54-silicidation reaction and strong (040) preferred orientation of the C54-silicide due to minimized As presence at n+ junctions. At p+ junctions, comparable performance was obtained in Rs reduction at fine lines from both As and Ge PAM schemes. Junction leakage current (JLC) revels are below ~1E-14 A/$\mu\textrm{m}^{2}$ at area patterns for all process conditions, whereas no degradation in JLC is shown under Ge PAM condition even at edge- intensive patterns. Smooth $TiSi_2$ interface is observed by cross- section TEM (X- TEM), which supports minimized silicide agglomeration due to Ge PAM and low level of JLC. Both junction break- down voltage (JBV) and contact resistances are satisfactory at all process conditions.

• The Korean Journal of Nuclear Medicine Technology
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• v.13 no.3
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• pp.137-142
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• 2009

Purpose: World Health Organization (WHO) have suggested that an individual's 10-year absolute fracture risk is more reliable than Bone Mineral Density (BMD) measurement as the predictor of osteoporotic fracture. In 2008, Fracture Risk Assessment Tool ($FRAX^{TM}$) was developed by WHO to evaluate fracture risk of patients based on individual's clinical risk factors. The purpose of this study is to offer the comparative analysis of the existing GE prodigy and $FRAX^{TM}$ Tool in Absolute Fracture Risk Assessment Tool. Materials and Methods: 201 women ($55{\pm}3.5$ years) underwent femoral neck BMD measurement using GE Prodigy. The 10-year probability (%) of hip fracture (or a major osteoporosis-related fracture) was estimated using T-scores of GE prodigy and $FRAX^{TM}$. We made a comparative analysis of these data using SPSS (Ver.12). Results: There was a significant difference statistically between T-score ($-0.52{\pm}0.97$) of GE prodigy and T-score ($-1.45{\pm}0.81$) of $FRAX^{TM}$ (r=0.977, p=0.000). Also, there was a significant difference statistically between a major osteoporosis- related fracture ($9.15{\pm}3.71$) of GE prodigy and a major osteoporosis-related fracture ($4.87{\pm}1.51$) of $FRAX^{TM}$ (r=0.909, p=0.000). Moreover, a statistically significant difference was found in the 10-year probability of hip fracture of GE prodigy ($1.56{\pm}1.48$) and of hip fracture ($0.53{\pm}0.61$) of $FRAX^{TM}$ (r=0.905, p=0.000). Conclusions: There was a significant difference statistically between GE prodigy and $FRAX^{TM}$ Tool in Absolute Fracture Risk Assessment Tool. Especially, T-score, a major osteoporosis-related fracture and the 10-year probability of hip fracture that were estimated using GE prodigy tended to show the higher results than one evaluated by $FRAX^{TM}$ Tool. In conclusion, $FRAX^{TM}$ Tool may provide a better tool. The application of $FRAX^{TM}$ Tool as a fracture predictor remains to be clarified.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.55 no.10
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• pp.461-466
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• 2006

In the present work, we investigated the photodissolution and photodiffusion effect on the interface of Ag/chalcogenide $As_{40}Ge_{10}Se_{15}S_{35}$ thin film by measuring the absorption coefficient, the optical density, the resistance change of Ag layer. It was found that the photodissolutioniphotodiffution ratio depends on the magnitude of photon energy absorbed in the chalcogenide thin film and the depth of photodiffution was proportional to the square root of the exposed time. Also, we have investigated the holographic grating formation with P-polarization states on chalcogenide $As_{40}Ge_{10}Se_{15}S_{35}$ thin film and $As_{40}Ge_{10}Se_{15}S_{35}/Ag$ double layer structure thin film. Holographic gratings have been formed using He-Ne laser (632.8 nm) which have a smaller energy than the optical energy gap, $E_g\;_{opt}$ of the film, i. e., an exposure of sub-bandgap light $(h{\upsilon} under P-polarization. As the results, we found that the diffraction efficiency on $As_{40}Ge_{10}Se_{15}S_{35}/Ag$ double layer structure thin film was more higher than that on single $As_{40}Ge_{10}Se_{15}S_{35}$ thin film. Also, we obtained that the maximum diffraction efficiency was 0.27 %, 1,000 sec on $As_{40}Ge_{10}Se_{15}S_{35}\;(1{\mu}m)/Ag$ (10 nm) double layer structure thin film by (P: P) polarized recording beam. It will offer lots of information for the photodoping mechanism and the analyses of chalcogenide thin films.

• ETRI Journal
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• v.25 no.4
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• pp.247-252
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• 2003

This paper presents results from experiments on laser-annealed SiGe-selective epitaxial growth (LA-SiGe-SEG). The SiGe-SEG technology is attractive for devices that require a low band gap and high mobility. However, it is difficult to make such devices because the SiGe and the highly doped region in the SiGe layer limit the thermal budget. This results in leakage and transient enhanced diffusion. To solve these problems, we grew in situ doped SiGe SEG film and annealed it on an XMR5121 high power XeCl excimer laser system. We successfully demonstrated this LA-SiGe-SEG technique with highly doped Ge and an ultra shallow junction on p-type Si (100). Analyzing the doping profiles of phosphorus, Ge compositions, surface morphology, and electric characteristics, we confirmed that the LA-SiGe-SEG technology is suitable for fabricating high-speed, low-power devices.

• Nuclear Engineering and Technology
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• v.7 no.2
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• pp.85-94
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• 1975

The n-type germanium crystals have been irradiated by $^{60}$ Co gamma-ray with 647 Mrad at room temperature for compensation. The Ge(${\gamma}$) detectors were fabricated from the gamma-ray irradiated germanium single crystals. The detector characteristics of the Ge (${\gamma}$) detectors were comparable to those of thin Ge(Li) detectors and high purity germanium detectors. The thermal stability of the Ge (${\gamma}$) detector showed a feasibility for ambient temperature storage.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.19 no.1
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• pp.1-6
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• 2006

High performance $Si_{0.8}Ge_{0.2}$ heterostructure metal-oxide-semiconductor field effect transistors (MOSFETs) were fabricated using well-controlled delta-doping of boron and $Si_{0.8}Ge_{0.2}$/Si heterostructure epitaxal layers grown by reduced pressure chemical vapor deposition. In this paper, we report 1/f noise characteristics of the SiGe pMOSFETs measured under various bias conditions of the gate and drain voltages changing in linear operation regions. From the noise spectral density, we found that the gate and drain voltage dependence of the noise represented same features, as usually scaled with $f^{-1}$ However, 1/f noise was found to be much lower in the device with boron delta-doped layer, by a factor of $10^{-1}_10^{-2}$ in comparison with the device fabricated without delta-doped layer. 1/f noise property of delta-doped device looks important because the device may replace bipolar transistors most commonly embedded in high-frequency oscillator circuits.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.9
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• pp.916-923
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• 2004

In this paper, the strained Si$_{0.9}$Ge$_{0.1}$ epitaxial layers grown by a reduced pressure chemical vapor deposition (RPCVD) on Si (100) were characterized by Rutherford backscattering spectrometery (RBS) for the fabrication of an SiGe heterojunction bipolar transistor(HBT). RBS spectra of the ${Si}_0.9{Ge}_0.1$epitaxial layers grown on the Si substrates which were implanted with the phosphorus (P) ion and annealed at a temperature between $850^{\circ}C$ - $1000^{\circ}C$ for 30min were analyzed to investigate the post thermal annealing effect on the grown${Si}_0.9{Ge}_0.1$epitaxial layer quality. Although a damage of the substrates by P ion-implantation might be cause of the increase of RBS yield ratios, but any defects such as dislocation or stacking fault in the grown ${Si}_0.9{Ge}_0.1$ epitaxial layer were not found in transmission electron microscope (TEM) photographs. The post high temperature rapid thermal annealing (RTA) effects on the crystalline quality of the ${Si}_0.9{Ge}_0.1$ epitaxial layers were also analyzed by RBS. The changes in the RBS yield ratios were negligible for RTA a temperature between $900^{\circ}C$ - $1000^{\circ}C$for 20 sec, or $950^{\circ}C$for 20 sec - 60 sec. A SiGe HBT array shows a good Gummel characteristics with post RTA at $950^{\circ}C$ for 20 sec.sec.sec.

• Nuclear Medicine and Molecular Imaging
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• v.41 no.1
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• pp.49-53
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• 2007

Purpose: It was reported that CT-based measured attenuation correction (CT-MAC) produced radioactivity concentration values significantly higher than $^{68}Ge$-based segmented attenuation correction (Ge-SAC) in PET images. However, it was unknown whether the radioactivity concentration difference resulted from different sources (CT vs. Ge) or types (MAC vs. SAC) of attenuation correction (AC). We evaluated the influences of the source and type of AC on the radioactivity concentration differences between reconstructed PET images in normal subjects and patients. Material and Methods: Five normal subjects and 35 patients with a known or suspected cancer underwent $^{18}F-FDG$ PET/CT. In each subject, attenuation corrected PET images using OSEM algorithm (28 subsets, 2 iterations) were reconstructed by 4 methods: CT-MAC, CT-SAC, Ge-MAC, and Ge-SAC. The physiological uptake in normal subjects and pathological uptake in patients were quantitatively compared between the PET images according to the source and type of AC. Results: The SUVs of physiological uptake measured in CT-MAC PET images were significantly higher than other 3 differently corrected PET images. Maximum SUVs of the 145 foci with abnormal FDG uptake in CT-MAC images were significantly highest among 4 differently corrected PET images with a difference of 2.4% to 5.1% (p<0.001). The SUVs of pathological uptake in Ge-MAC images were significantly higher than those in CT-SAC and Ge-MAC PET images (p<0.001). Conclusion: Quantitative radioactivity values were highest in CT-MAC PET images. The adoption of MAC may make a more contribution than the adoption of CT attenuation map to such differences.