• Journal of the Korea Institute of Information and Communication Engineering
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• v.8 no.2
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• pp.430-439
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• 2004

This paper describes a design of 8192/2048-point FFT/IFFT processor (CFFT8k2k), which performs multi-carrier modulation/demodulation in OFDM-based DVB-T receiver. Since a large size FFT requires a large buffer memory, two design techniques are considered to achieve memory-efficient implementation of 8192-point FFT/IFFT. A hybrid structure, which is composed of radix-4 single-path delay feedback (R4SDF) and radix-4 single-path delay commutator (R4SDC), reduces its memory by 20% compared to R4SDC structure. In addition, a memory reduction of about 24% is achieved by a novel two-step convergent block floating-point scaling. As a result, it requires only 57% of memory used in conventional design, reducing chip area and power consumption. The CFFT8k2k core is designed in Verilog-HDL, and has about 102,000 Bates, RAM of 292k bits, and ROM of 39k bits. Using gate-level netlist with SDF which is synthesized using a $0.25-{\um}m$ CMOS library, timing simulation show that it can safely operate with 50-MHz clock at 2.5-V supply, resulting that a 8192-point FFT/IFFT can be computed every 164-${\mu}\textrm{s}$. The functionality of the core is fully verified by FPGA implementation, and the average SQNR of 60-㏈ is achieved.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.17 no.5
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• pp.1203-1212
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• 2013

In this paper, an intra prediction hardware architecture is proposed to reduce computational complexity of intra prediction in HEVC decoder. The architecture uses shared operation units and common operation units and adopts a fast smoothing decision algorithm and a fast algorithm to generate coefficients of a filter. The shared operation unit shares adders processing common equations to remove the computational redundancy. The unit computes an average value in DC mode for reducing the number of execution cycles in DC mode. In order to reduce operation units, the common operation unit uses one operation unit generating predicted pixels and filtered pixels in all prediction modes. In order to reduce processing time and operators, the decision algorithm uses only bit-comparators and the fast algorithm uses LUT instead of multiplication operators. The proposed architecture using four shared operation units and eight common operation units which can reduce execution cycles of intra prediction. The architecture is synthesized using TSMC 0.13um CMOS technology. The gate count and the maximum operating frequency are 40.5k and 164MHz, respectively. As the result of measuring the performance of the proposed architecture using the extracted data from HM 7.1, the execution cycle of the architecture is about 93.7% less than the previous design.

• The Journal of the Society of Korean Medicine Diagnostics
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• v.9 no.2
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• pp.10-24
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• 2005

Background and Purpose: Feeling the pulse is based on the pulse condition and alteration to observe the condition of the human body's health and by using a healthy person's pulse as a standard we are able to analyze the patient's pulse to find the attacked channel and collateral, viscera and bowels and understand the pathology such as diseases caused by exogenous evil, disorder of internal organs, and seven modes of emotions. Observing the color and shade of the patient's face, listening carefully to the sound of the patient, and feeling the pulse are methods in accordance with Su Wen 'Plain Questions', 'The Classic on Difficulty' (5th century B.C. Bianque), 'The Classic of Sphymology' (280 A.D. Wang Xi), 'Pulse Formulas' (1189 A.D. Cui Jiayan), and is systematically edited for those who have started studying to easily reach the profound state. Therefore, 'The Elementary Course for Medicine' has been used from ancient times as the textbook for diagnostics. Methods: In this Study, we will inspect commonly used pulse feeling methods, the inch, bar, cubit thesis, the viscera and bowels thesis from The Elementary Course for Medicine and inquire the difference of the text from 'Plain Questions of Huangdi's Internal Classic', 'Treatise on Febrile Diseases', 'Classic on Difficulty'. Results and Conclusion: 1. In 'The Elementary Course for Medicine' the site of the wrist along the pulsation of the radial artery is divided into inch, bar, cubit and has defined the inch, bar, cubit crossways. 2. In 'The Elementary Course of Medicine' the inch, bar, cubit for the left hand and right hand is subjected to each viscera and bowel. By assigning the left hand's inch, bar, cubit to the cardial orb, the hepatic orb, the renal orb, and the right hand's inch, bar, cubit to the pulmonic orb, the splenic orb, the vital gate it has been able to feel the pulse for each viscera and bowel by using the interpromoting and interacting relation of the five evolutive phases.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.23 no.7
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• pp.545-549
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• 2010

Low-frequency noise (1/f noise) has been measured in order to analyze the Vth instability of ZnO TFTs having two different active layer thicknesses of 40 nm and 80 nm. Under electrical stress, it was found that the TFTs with the active layer thickness of 80 nm shows smaller threshold voltage shift (${\Delta}V_{th}$) than those with thickness of 40 nm. However the ${\Delta}V_{th}$ is completely relaxed after the removal of DC stress. In order to investigate the cause of this threshold voltage instability, we accomplished the 1/f noise measurement and found that ZnO TFTs exposed the mobility fluctuation properties, in which the noise level increases as the gate bias rises and the normalized drain current noise level($S_{ID}/{I_D}^2$) of the active layer of thickness 80 nm is smaller than that of active layer thickness of thickness 40 nm. This result means that the 80 nm thickness TFTs have a smaller density of traps. This result correlated with the physical characteristics analysis performmed using XRD, which indicated that the grain size increases when the active layer thickness is made thicker. Consequently, the number of preexisting traps in the device increases with decreasing thickness of the active layer and are related closely to the $V_{th}$ instability under electrical stress.

• Proceedings of the Korean Vacuum Society Conference
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• 2000.02a
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• pp.156-156
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• 2000

Recently, the surface electronic states have attracted much attention since their standing wave patterns created around steps, defects, and adsorbates on noble metal surfaces such as Au(111), Ag(110), and Cu(111) were observed by scanning tunneling microscopy (STM). As a typical example, a striking circular pattern of "Quantum corral" observed by Crommie, Lutz, and Eigler, covers a number of text books of quantum mechanics, demonstrating a wavy nature of electrons. After the discoveries, similar standing waves patterns have been observed on other metal and demiconductor surfaces and even on a side polane of nano-tubes. With an expectation that the surface states could be utilized as one of ideal cases for studying two dimensionakl (sD) electronic system, various properties, such as mean free path / life time of the electronic states, have been characterized based on an analysis of standing wave patterns, . for the 2D electron system, electron density is one of the most importnat parameters which determines the properties on it. One advantage of conventional 2D electron system, such as the ones realized at AlGaAs/GaAs and SiO2/Si interfaces, is their controllability of the electrondensity. It can be changed and controlled by a factor of orders through an application of voltage on the gate electrode. On the other hand, changing the leectron density of the surface-state 2D electron system is not simple. On ewqy to change the electron density of the surface-state 2D electron system is not simple. One way to change the electron density is to deposit other elements on the system. it has been known that Pd(111) surface has unoccupied surface states whose energy level is just above Fermi level. Recently, we found that by depositing Pd on Cu(111) surface, occupied surface states of Cu(111) is lifted up, crossing at Fermi level around 2ML, and approaches to the intrinsic Pd surface states with a increase in thickness. Electron density occupied in the states is thus gradually reduced by Pd deposition. Park et al. also observed a change in Fermi wave number of the surface states of Cu(111) by deposition of Xe layer on it, which suggests another possible way of changing electron density. In this talk, after a brief review of recent progress in a study of standing weaves by STM, I will discuss about how the electron density can be changed and controlled and feasibility of using the surface states for a study of 2D electron system. One of the most important advantage of the surface-state 2D electron system is that one can directly and easily access to the system with a high spatial resolution by STM/AFM.y STM/AFM.

• Journal of the Korean Vacuum Society
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• v.9 no.3
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• pp.258-262
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• 2000

$YMnO_3$thin films are deposited on Si(100) and $Y_2O_3/Si(100)$ substrate by radio frequency sputtering. The deposition condition of oxygen partial pressure and annealing temperature have significant influences on the preferred orientation of $YMnO_3$film and the size of memory window. The results of x-ray diffraction show that the film deposited in the oxygen partial pressure of 0% is highly oriented along c-axis after annealing at $870^{\circ}C$ for 1 hr in oxygen ambient. However, the films deposited on Si and $Y_2O_3/Si$ in the oxygen partial pressures of 20% show $Y_2O_3$ peak, the excess $Y_2O_3$ in the $YMnO_3$film suppresses the c-axis oriented crystallization. Especially memory windows of the $Pt/YMnO_3/Y_2O_3/Si$ capacitor are 0.67~3.65 V at applied voltage of 2~12 V, which is 3 times higher than that of the film deposited on $Y_2O_3/Si$ in 20% oxygen (0.19~1.21 V) at the same gate voltage because the film deposited in 0% oxygen is well crystallized along c-axis.

• Proceedings of the Korean Vacuum Society Conference
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• 2000.02a
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• pp.195-195
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• 2000

TFT-LCD의 제조공정은 박막층의 식각 공정에 대해 기존의 습식 공정을 대치하는 건식식각이 선호되고 있다. 건식 식각 공정은 반도체 공저에 응용되면서 소자의 최소 선폰(CD)이 감소함에 따라 유도결합셩 프라즈마를 비롯한 고밀도 플라즈마 이용한 플라즈마 장비 사용이 증가하는 추세이다. 여기에 평판디스플레이의 공정을 위해서는 대면적과 사각형 기판에 대한 균일도를 보장할 수 있는 고밀도의 균일한 플라즈마 유지가 중요하다. 본 실험에서는 자장강화된 유도결합형 플라즈마의 플라즈마 밀도 및 균일도를 살펴보고 TFT-LCD에 gate 전극으로 사용되는 Al-Nd 박막의 식각을 통하여 식각균일도와 식각속도 및 식각 선택도 등의 건식 식각 특성을 보고자 한다. 영구자석 및 전자석의 설치는 사각형의 유도결합형 플라즈마는 소형 영구자석을 배열하여 부착하였으며, 외부에는 chamber와 같이 사각형태의 전자석을 500mm$\times$500mm의 크기를 갖는 z축 방향의 Helmholtz형으로 제작하였다. 더. 영구자석 배열에 대해서는 자석간의 거리와 세기 변화를 조합하여 magnetic cusping의 변화를 주었으며 전자석의 세기는 전류값을 기준으로 변화시켜 보았다. 실험을 통하여 플라즈마 균일도를 5% 이하로 개선하고 이러한 균일도를 유지하며 플라즈마 밀도를 높일 수 있는 조건을 찾을 수 있었다. 이러한 적합화된 조건에서 저장강화된 유도결합형 프라즈마를 Al-Nd 박막 식각에 응용한 결과, Al-Nd의 식각속도 및 식각 선택도는 유도결합형 프라즈마에 비해 크게 증가하였으며, 식각균일도가 개선되는 것을 관찰하였다. 또한 electrostatic probe(Hiden, Analytical)를 이용하여 Al-Nd 식각에 사용된 반응성 식각가스에 대한 저장강화된 유도결합형 플라즈마의 특성 분석을 수행하였다.c recoil detection, Rutherford backscattering spectroscopy, X-ray diffraction, secondary electron microscopy, atomic force microscoy, $\alpha$-step, Raman scattering spectroscopu, Fourier transform infrared spectroscopy 및 micro hardness tester를 이용하여 기판 bias 전압이 DLC 박막의 특성에 미치는 영향을 조사하였다. 분석결과 본 연구에서 제작된 DLC 박막은 탄소와 수소만으로 구성되어 있으며, 비정질 상태임을 알 수 있었다. 기판 bias 전압의 증가에 따라 박막의 두께가 감소됨을 알 수 있었고, -150V에서는 박막이 거의 만들어지지 않았으며, -200V에서는 기판 표면이 식각되었다. 이것은 기판 bias 전압과 ECR 플라즈마에 의한 이온충돌 효과 때문으로 판단되며, 150V 이하에서는 증착되는 양보다 re-sputtering 되는 양이 더 많을 것으로 생각된다. 기판 bias 전압을 증가시킬수록 플라즈마에 의한 이온충돌 현상이 두드러져 탄소와 결합하고 있던 수소원자들이 떨어져 나가는 탈수소화 (dehydrogenation) 현상을 확인할 수 있었으며, 이것은 C-H 결합에너지가 C-C 결합이나 C=C 결합보다 약하여 수소 원자가 비교적 해리가 잘되므로 이러한 현상이 일어난다고 판단된다. 결합이 끊어진 탄소 원자들은 다른 탄소원자들과 결합하여 3차원적 cross-link를 형성시켜 나가면서 내부 압축응력을 증가시키는 것으로 알려져 있으며, hardness 시험 결과로 이것을 확인할 수 있었다. 그리고 표면거칠기는 기판 bias 전압을 증가시킬수록 더 smooth 해짐을 확인하였다.인하였다.을 알 수 있

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.456-456
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• 2010

CMOS 소자가 서브마이크론($0.1\;{\mu}m$) 이하로 스케일다운 되면서 단채널 효과(short channel effect), 게이트 산화막(gate oxide)의 누설전류(leakage current)의 증가와 높은 직렬저항(series resistance) 등의 문제가 발생한다. CMOS 소자의 구동전류(drive current)를 높이고, 단채널 효과를 줄이기 위한 가장 효율적인 방법은 소스 및 드레인의 얕은 접합(shallow junction) 형성과 직렬 저항을 줄이는 것이다. 플라즈마 도핑 방법은 플라즈마 밀도 컨트롤, 주입 바이어스 전압 조절 등을 통해 저 에너지 이온주입법보다 기판 손상 및 표면 결함의 생성을 억제하면서 고농도로 얕은 접합을 형성할 수 있다. 그리고 얕은 접합을 형성하기 위해 주입된 불순물의 활성화와 확산을 위해 후속 열처리 공정은 높은 온도에서 짧은 시간 열처리하여 불순물 물질의 활성화를 높여주면서 열처리로 인한 접합 깊이를 얕게 해야 한다. 그러나 접합의 깊이가 줄어듦에 따라서 소스 및 드레인의 표면 저항(sheet resistance)과 접촉저항(contact resistance)이 급격하게 증가하는 문제점이 있다. 이러한 표면저항과 접촉저항을 줄이기 위한 방안으로 실리사이드 박막(silicide thin film)을 형성하는 방법이 사용되고 있다. 본 논문에서는 (100) p-type 웨이퍼 He(90 %) 가스로 희석된 $PH_3$(10 %) 가스를 사용하여 플라즈마 도핑을 실시하였다. 10 mTorr의 압력에서 200 W RF 파워를 인가하여 플라즈마를 생성하였고 도핑은 바이어스 전압 -1 kV에서 60 초 동안 실시하였다. 얕은 접합을 형성하기 위한 불순물의 활성화는 ArF(193 nm) excimer laser를 통해 $460\;mJ/cm^2$의 에니지로 열처리를 실시하였다. 그리고 낮은 접촉비저항과 표면저항을 얻기 위해 metal sputter를 통해 TiN/Ti를 $800/400\;{\AA}$ 증착하고 metal RTP를 사용하여 실리사이드 형성 온도를 $650{\sim}800^{\circ}C$까지 60 초 동안 열처리를 실시하여 $TiSi_2$ 박막을 형성하였다. 그리고 $TiSi_2$의 두께를 측정하기 위해 TEM(Transmission Electron Microscopy)을 측정하였다. 화학적 결합상태를 분석하기 위해 XPS(X-ray photoelectronic)와 XRD(X-ray diffraction)를 측정하였다. 접촉비저항, 접촉저항과 표면저항을 분석하기 위해 TLM(Transfer Length Method) 패턴을 제작하여 I-V 특성을 측정하였다. TEM 측정결과 $TiSi_2$의 두께는 약 $580{\AA}$ 정도이고 morphology는 안정적이고 실리사이드 집괴 현상은 발견되지 않았다. XPS와 XRD 분석결과 실리사이드 형성 온도가 $700^{\circ}C$에서 C54 형태의 $TiSi_2$ 박막이 형성되었고 가장 낮은 접촉비저항과 접촉저항 값을 가진다.

• Journal of the Korean Society of Fisheries and Ocean Technology
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• v.31 no.3
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• pp.247-255
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• 1995

This paper describes a personal computer(PC) based color fish finder to improve some problem of the commercial one. The commercial fish finder has no function of the echo data logging and replaying. The authors developed two types of the PC based color fish finder. One is a master type composed of a PC, a digital input-output board, and analog to digital converting (A/D) board and an ultrasonic transceiver unit, the other is a slave type composed of a PC and an A/D board. To test the performances of the master type experiments were carried out in air and in a water tank. It is found that the designed master type fish finder displays very well an eight-colored echogram by one dot resolution to the left side of the PC monitor. Also, the depth of echo signal was corresponds very well to the range from the transducer to a target. The sampling interval of echo signal is about 0.1m and the time of A/D conversion is 30 $\mu$sec. On the other hand, to test the performances of the slave type a raw data of echo signals from a data logger was supplied directly or via RF transceivers to the slave type one. From this experiment, it is confirmed the slave type is useful to replay the echo signal from the data logger or a telesounder.

• Journal of Biomedical Engineering Research
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• v.24 no.4
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• pp.363-367
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• 2003

Contact area and pressure are important factors which directly influence a life of knee implants. Since implant's mechanical functions should be experimentally evaluated for clinical use, many studies using a knee simulator and a pressure sensor system have been conducted. However it has not been reported that the contact pressure's distribution of a knee implant motion was estimated in real-time during a gate cycle. Therefore. the objective of this study was to analyze the contact pressure distribution for the motion of a joint using the knee simulator and I-scan sensor system. For this purpose, we developed a force-controlled dynamic knee simulator to evaluate the mechanical performance of artificial knee joint. This simulator includes a function of a soft tissue and has a 4-degree-of-freedom to represent an axial compressive load and a flexion angle. As axial compressive force and a flexion angle of the femoral component can be controlled by PC program. The pressure is also measured from I-scan system and simulator to visualize the pressure distribution on the joint contact surfaces under loading condition during walking cycle. The compressive loading curve was the major cause for the contact pressure distribution and its center move in a cycle as to a flexion angie. In conclusion, this system can be used to evaluate to the geometric interaction of femoral and tibial design due to a measured mechanical function such as a contact pressure, contact area and a motion of a loading center.