• Journal of electromagnetic engineering and science
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• v.6 no.2
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• pp.98-102
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• 2006

In this paper, we have designed and fabricated the high power amplifier employing PBG(Photonic Band-Gap Structure) to improve the linearity of the amplifier in the millimeter wave band. The fabricated amplifier using MMIC(TGA1073G) has operated about 24 GHz band and the PBG has resulted in 35 dB suppression about 49 GHz where the second harmonic occurs due to the amplifier. As a result, the output power has been 24.43 dBm and 13.2 dBc of the IMD has been improved. Also, the PAE is obtained to 14.96 % of the amplifier employing the PBG structure in Ka band.

• Korean Journal of Child Studies
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• v.5
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• pp.21-45
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• 1984

The cognition of Korean kinship names was examined in children in the 1st, 3rd, 5th, and 9th grades (N=188) of public school. The task consisted of 43 items which identified the relative relationships of cognates and cognates-in-law. It was found that the main effects of age and residential area on cognition scores were significant and the interaction effects between the variables were also significant. As expected, older children performed the task more precisely than the younger children and children in Seoul performed better than in outlying regions. Under 15 years of age, the scores in Seoul were higher than in Andong, but at the age of l5, this trend was reversed. The gap between residential areas under 15 years of age could be explained by differences in cognitive ability and test effects, but the gap at 15 by culture.

• Journal of electromagnetic engineering and science
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• v.5 no.1
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• pp.43-47
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• 2005

Microwave or optical photonic band-gap(PBG) structures are conventionally realized by cascading distributive elements in a periodic pattern. However, the frequency bandwidth obtained through such plainly periodic arrangement is typically narrow, corporate with a relatively high rejection side-lobe band. To alleviate such problems, a design involving a chirping and tapering technique is hence introduced and employed. The design has been applied in both a planar stratified dielectric medium as well as a strip-line transmission line structure, and results are validated when compared with the corresponding conventional PBG structure.

• Progress in Superconductivity and Cryogenics
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• v.5 no.3
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• pp.43-47
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• 2003

For an electrical insulation design of HTS cable, it is important to understand the dielectric characteristics of insulation materials in $LN_2$ and the insulation type. Generally, the electrical insulation of HTS Cable is classified into two types of the composite insulation and solid insulation type. In this research, we selected the insulation paper/$LN_2$ composite insulation type for the electric insulation of a HTS cable, and studied electric insulation characteristics of synthetic Laminated Polypropylene Paper (LPP) in liquid nitrogen ($LN_2$) for the application to high temperature superconducting (HTS) cable. Furthermore, we compared the breakdown characteristics of the butt gap and bended mini-model cable. It is necessary to understand the winding parameter of insulation paper/$LN_2$ composite insulation.

• Journal of Korean Institute of Industrial Engineers
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• v.31 no.1
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• pp.36-43
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• 2005

It is the basic requirement of design process of parts assembly to specify geometric dimensions and tolerances of product characteristics. Among them, tolerance stack analysis is one of the important methods to specify tolerance zone. Tolerance stack analysis is to calculate gap using tolerances which includes geometric and coordinate dimensions. In this study, we suggested more general method called the virtual method to analyze tolerance stack. In virtual method, tolerance zone is formed by combination of dimensional tolerance, geometric tolerance and bonus tolerance. Also tolerance zone is classified by virtual boundary condition and resultant boundary condition. So gap can be defined by combination of virtual boundary and/or resultant boundary. Several examples are used to show the effectiveness of new method comparing to other methods.

• Journal of the Korean Institute of Telematics and Electronics
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• v.26 no.11
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• pp.1814-1818
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• 1989

The crystals of ZnGa2S4 and ZnGa2S4:Co(2mole%) were synthesized from high-purity (99.999%) elements of Zinc, Gallium, and sulfur. The crystal structure of these crystals belong to a tetragonal system with layer type and the lattice constants are a =5.35\ulcorner c=10.43\ulcornerfor ZnGa2S4: Co(2 mole%) crystal at 298\ulcorner. The optical absorption spectra of these compounds were obtained through reflectance measurements using a 60 mm diameter intergrating sphere. The optical energy gaps are 3.18eV for ZnGa2S4 and 2.60eVfor ZnGa2S4:L Co(2mole%)at 298\ulcorner, respectively.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.4 no.1
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• pp.43-46
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• 1979

The lightning which is occurred in different regions Contains 80% of whole between June and September. There were the lightning accidents at the peak of mountains. As a result, the antenna tower of AM broadcasting Systems build up clyish plain where has a low earth characteristics resistivity. The following have been observed as a Counter lightning Systems such as high frequency choke, sphere gap(75, 000 V/inch) and reflective power detection relay.

• The Transactions of the Korean Institute of Electrical Engineers
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• v.43 no.3
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• pp.420-431
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• 1994

The HgCdTe material, which is II-VI compound semiconductor, is important materials for the fabrication of the infrared detectros. To suggest the model of accurate MIS C-V calculation for narrow band gap semiconductors such as HgCdTe, non-parabolicity from k.p theory and degeneracy effect are considered. And partially ionized effect and compensation effect which are material's properties are also considerd. Especially, degenerated material C-V characteristics from Fermi-Dirac statistics and exact charge theory are presented to get more accurate analysis of the experimental results. Also the comparison with calculation results between the general MIS theory from Boltzmann appoximation method and this model which is considered the narrow band gap semiconductor properties, show that this model is more useful theory to determination of accurate low and high frequency C-V characteristics.

• Transactions of the Korean Society of Machine Tool Engineers
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• v.16 no.6
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• pp.43-48
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• 2007

It is important to measure the rotational accuracy of lathe spindle as it affects to the qualities of all machines machined by the lathe using in industries. The bad rotational accuracy of lathe spindle are caused mainly by wearness of the spindle in using and quality of spindle when machining and using low level bearings. It occurs especially in case of lathes because the cutting force acting to work-piece act on one side to the spindle not to both sides symmetrically. Therefore in this study, constructing experimental apparatus for measuring of rotational accuracy by using eddy current type gap sensors AEC5706PS and sensors, s-06LN, data acquisition board DT9834(USB type) and software for data acquisition, DT Measure Foundry ver. 4.0.7 etc., error data acquired in the rotational accuracy test of lathe spindle are analysed in plots and statistical treatments.

• Journal of the Semiconductor & Display Technology
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• v.9 no.4
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• pp.39-43
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• 2010

According to recent changes in industry for the semiconductor device, a gap between patterns in wafer is getting narrow. And this narrow gap makes a failure of uniform deposition between center and edge on the wafer. In this paper, for solving this problem, we analyze and manipulate the gas flow inside of the HDP CVD chamber by using CFD(Computational Fluid Dynamics). This simulation includes design manipulations in heights of the chamber and shape of center nozzle in the upper side of the chamber. The result of simulation shows 1.28 uniformity which is lower 3% than original uniformity.