• 제목/요약/키워드: GA treatment

검색결과 1,032건 처리시간 0.027초

Gibberellic acid 처리가 Kentucky bluegrass와 Tall fescue 잔디종자의 발아와 초기생육에 미치는 영향 (Effect of Gibberellic Acid on Seed Germination and Early Growth of Kentucky Bluegrass and Tall Fescue Turfgrass)

  • 강점순;김용철;최인수
    • 생물환경조절학회지
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    • 제16권1호
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    • pp.32-39
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    • 2007
  • 발아율이 저조한 한지형 잔디인 Kentucky bluegrass 와 Tall fescue종자를 식물생장조절제인 $GA_3$와 BAP를 처리하여 발아율을 극대화시킬 수 있는 최적 처리조건을 구명하였다. Kentucky bluegrass 초종에서는 $GA_3$ 처리는 농도에 관계없이 BAP 단독 또는 및 $GA_3$와 BAP혼용처리보다 발아증진 효과가 높았으며, 처리기간은 6일 처리가 3일 처리보다 좋았다. 따라서 최적 처리조건은 $GA_3$ $1000{\mu}M$농도로 6일간 처리였으며, 무처리보다 발아율을 $10{\sim}38%$ 향상시킬 수 있었다. Tall fescue 종자는 생장조절제를 처리하면 발아율이 향상되는 경향이나 현저한 수준은 아니었다. 최적 생장조절제 처리조건은 $GA_3\;1000{\mu}M$용액으로 3일간 처리였는데, 무처리 종자에서 비해 발아율을 10%증진시켰다. $GA_3$ 처리된 Kentucky bluegrass와 Tall fescue 종자는 묘출현율이 무처리에 비해 $8{\sim}9%$ 향상되었고, 묘출현속도는 1.2일 빨랐다. 또한 건물 중, 초장 및 뿌리생장 등 초기생육이 무처리에 비해 향상되었으나, 유의성은 인정되지 않았다.

GA3 처리가 유색칼라 괴경의 개화에 미치는 영향 (Effect of GA3 Treatment on the Flowering in Tuber of Zantedeschia 'Black Magic')

  • 박노복;임회춘
    • 현장농수산연구지
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    • 제7권1호
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    • pp.90-96
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    • 2005
  • GA3 침지시간과 농도에 따른 출현소요일수는 GA3 처리가 무처리에 비하여 1.1~4.0일 단축되었으며 생육특성도 GA3 처리가 양호한 경향이었으나 GA3 침지 시간과 농도에 따른 차이는 적었다. 개화소요일수는 GA3 처리가 무처리보다, 30분 침지가 10초 침지보다, 그리고 농도가 높을수록 단축되었으나 화경장, 화경폭, 화고 및 화폭 등은 처리간 차이가 없었다. 또한 개화수는 GA3 농도에 따른 효과가 커서 250~500 mg·L-1 처리가 4.0~4.3개로 최고 2배 많았으나 GA3 침지 시간에 따른 개화수 차이는 크지 않았다. 정상화율과 구근비대상황은 침지시간 및 농도에 관계없이 비슷하였다. 이로써 GA3 처리는 개화수 증가를 위해 반드시 필요하며 침지시간에 상관없이 처리농도는 250~500mg·L-1가 적당할 것으로 판단된다.

수소화 처리된 InAs/GaAs 양자점 적외선 수광소자의 전기적 특성 (Electrical Property in InAn/GaAs Quantum Dot Infrared Photodetector with Hydrogen Plasma Treatment)

  • 남형도;송진동;최원준;조운조;이정일;최정우;양해석
    • 한국진공학회지
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    • 제15권2호
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    • pp.216-222
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    • 2006
  • InGaAs/GaAs 양자 우물 내에 삽입된 InAs 양자점으로 구성된 5층의 흡수층과 $Al_{0.3}Ga_{0.7}As/GaAs$ SL (superlattice) 암전류 장벽층을 갖는 QDIP (quantum dot infrared photodetector) 구조에 대한 수소 RF 플라즈마에 의한 수소화 처리가 QDIP의 전기적. 광학적 특성에 미치는 영향에 대해 연구하였다. RF 플라즈마 수소화 처리는 양자점의 밴드구조에 영향을 미치지 않았으며 $Al_{0.3}Ga_{0.7}As/GaAs$ SL 암전류 장벽층 내의 결함 제거 및 QDIP 구조 내 결함 생성을 동시에 유도함으로써 QDIP의 전기적 특성 향상은 수소 플라즈마 처리시간의 함수임을 알았다. 20 W의 수소 RF 플라즈마를 사용했을 때, 10분간의 플라즈마 조사가 가장 좋은 전기적 특성을 제공하여 높은 암전류 때문에 원시료에서는 측정 할 수 없었던 광전류 신호를 측정 할 수 있었다.

Growth and flowering as affected by tuber hardness, GA3 concentrations and treatment duration in Calla (Zantedeschia)

  • Nam, Chun-Woo;Yoo, Dong-Lim;Kim, Su-Jeong;Suh, Jong-Teak;Peak, Kee Yoeup;An, Se Woong;Chun, Hee
    • 농업과학연구
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    • 제43권1호
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    • pp.28-32
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    • 2016
  • This experiment was carried out to determine optimal culture conditions for the production of cut flowers and tubers of Calla (Zantedeschia 'Black Magic') in highlands. To achieve the research purpose, growth of 'Black Magic' Calla influenced by tuber hardness (3.3 and $6.0kg/cm^2$), $GA_3$ concentration (0, 100 and $200mgL^{-1}$), duration of $GA_3$ treatment (24 hr, 12 hr and 30min before planting) were investigated. When tubers have high hardness, those were not severely injured by soft rot disease regardless of $GA_3$ concentrations and treatment durations. Tubers with low tuber hardness showed more than 90% of soft rot occurrence when treated with $200mgL^{-1}$ $GA_3$ for 24 hrs before planting. However, soft rot did not occur when tubers were treated with $200mgL^{-1}$ $GA_3$ for 12 hrs before planting. In conclusion, $GA_3$ treatment results showed soft rot occurrence statistically significant degree in accordance with the bulbs hardness. In addition, the yield of the cut flowers is the result received the greatest effect in accordance with the bulbs in size and appeared to not be determined in accordance with the $GA_3$ treatment concentration and hardness bulbs. To obtain flowers without soft rot symptom, tubers (as $6.0kg/cm^2$) should be completely dried after $GA_3$ treatment.

Targeting Renal Cell Carcinoma with Gambogic Acid in Combination with Sunitinib in Vitro and in Vivo

  • Jiang, Xiao-Liang;Zhang, Yao;Luo, Chun-Li;Wu, Xiao-Hou
    • Asian Pacific Journal of Cancer Prevention
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    • 제13권12호
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    • pp.6463-6468
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    • 2012
  • Purpose: To evaluated the effect of the gambogic acid (GA), one of the effective components of Garcinia, in combination with a new multi-targeted oral medication, sunitinib (SU) on renal cancer cell proliferation in vitro and on tumor growth in vivo. Methods: After treatment with GA or SU, either alone or in combination, MTT and FACS analysis were used to examine cell viability and cycle distribution of the renal carcinoma cell lines 786-0 and Caki-1. Western blotting was employed to examine the expression of proteins related to the cell cycle and vascular formation. Furthermore, a xenograft model was applied to study the antitumor efficacy of SU or GA alone or in combination, with immunohistochemistry to detect expression of proteins related to xenograft growth and angiogenesis. Western blotting was used to examine NF-${\kappa}B$ signaling pathway elements in xenografts. Results: Treatment of 786-0 and Caki-1 cells with GA or SU resulted in decreased tumor cell proliferation, especially with joint use. Cells accumulated more strongly in the sub-G1 phase after joint treatment with GA and SU than treatment of GA and SU alone. Western blotting arrays showed 1 protein significantly upregulated, 2 proteins downregulated, and 2 proteins unchanged. Moreover, combined use of GA and SU inhibited the growth and angiogenesis of xenografts generated from Caki-1 significantly. Immunohistochemistry arrays showed downregulation of the expression of proteins promoting xenograft growth and angiogenesis, and Western blotting showed inhibition of the NF-${\kappa}B$ signaling pathway after treatment by GA alone and in combination with SU in xenografts. Conclusions: Our results show that the joint use of GA and SU can provide greater antitumor efficacy compared to either drug alone and thus may offer a new treatment strategy for renal cell carcinoma.

Surface Passivation Method for GaN UV Photodetectors Using Oxygen Annealing Treatment

  • Lee, Chang-Ju;Park, Hongsik
    • 센서학회지
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    • 제25권4호
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    • pp.252-256
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    • 2016
  • Epitaxially grown GaN layers have a high surface state density, which typically results in a surface leakage current and a photoresponse in undesirable wavelengths in GaN optoelectronic devices. Surface passivation is, therefore, an important process necessary to prevent performance degradation of GaN UV photodetectors. In this study, we propose oxygen-enhanced thermal treatment as a simple surface passivation process without capping layers. The GaN UV photodetector fabricated using a thermal annealing process exhibits improved electrical and photoresponsive characteristics such as a reduced dark current and an enhanced photoresponsive current and UV-to-visible rejection ratio. The results of this study show that the proposed surface passivation method would be useful to enhance the reliability of GaN-based optoelectronic devices.

Analysis of behavioral management for dental treatment in patients with dementia using the Korean National Health Insurance data

  • Kim, Taeksu;Chi, Seong In;Kim, Hyuk;Seo, Kwang-Suk
    • Journal of Dental Anesthesia and Pain Medicine
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    • 제21권5호
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    • pp.461-469
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    • 2021
  • Background: The global population is aging rapidly, and accordingly, the number of patients with dementia is increasing every year. Although the need for dental treatment increases for various reasons in patients with dementia, they cannot cooperate during dental treatment. Therefore, behavioral management, including sedation (SED) or general anesthesia (GA), is required for patients with dementia. Thus, this study aimed to investigate the trends and effects of SED or GA in patients with dementia undergoing dental treatment in South Korea based on the Korean National Health Insurance claims data. Methods: This study utilized customized health information data provided by the Health Insurance Review and Assessment Service. Among patients with records of using sedative drugs during dental treatment from January 2007 to September 2019, patients with the International Classification of Diseases-10 code for dementia (F00, F01, F02, F03, and G30) were selected. We then analyzed the full insurance claims data for dental care. Age, sex, sedative use, and dental treatment of patients were analyzed yearly. In addition, the number of cases of GA or SED per year was analyzed, and changes in behavioral management methods with increasing age were investigated. Results: Between January 2007 and September 2019, a total of 4,383 (male, 1,454; female, 2,929) patients with dementia received dental treatment under SED or GA. The total number of SED and GA cases were 1,515 (male, 528 ; female, 987 ) and 3,396 (male, 1,119 ; female, 2,277) cases, respectively. The total number of cases of dental treatment for 4,383 patients with dementia was 153,051 cases, of which 2.22% were under GA and 0.98% were under SED. Midazolam was the most commonly used drug for SED. Conclusion: Although gingivitis and pulpitis were the most common reasons for patients with dementia to visit the dentist, GA or SED for patients with dementia was frequently used in oral and maxillofacial or periodontal surgery.

Heat Treatment of Carbonized Photoresist Mask with Ammonia for Epitaxial Lateral Overgrowth of a-plane GaN on R-plane Sapphire

  • Kim, Dae-sik;Kwon, Jun-hyuck;Jhin, Junggeun;Byun, Dongjin
    • 한국재료학회지
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    • 제28권4호
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    • pp.208-213
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    • 2018
  • Epitaxial ($11{\bar{2}}0$) a-plane GaN films were grown on a ($1{\bar{1}}02$) R-plane sapphire substrate with photoresist (PR) masks using metal organic chemical vapor deposition (MOCVD). The PR mask with striped patterns was prepared using an ex-situ lithography process, whereas carbonization and heat treatment of the PR mask were carried out using an in-situ MOCVD. The heat treatment of the PR mask was continuously conducted in ambient $H_2/NH_3$ mixture gas at $1140^{\circ}C$ after carbonization by the pyrolysis in ambient $H_2$ at $1100^{\circ}C$. As the time of the heat treatment progressed, the striped patterns of the carbonized PR mask shrank. The heat treatment of the carbonized PR mask facilitated epitaxial lateral overgrowth (ELO) of a-plane GaN films without carbon contamination on the R-plane sapphire substrate. Thhe surface morphology of a-plane GaN films was investigated by scanning electron microscopy and atomic force microscopy. The structural characteristics of a-plane GaN films on an R-plane sapphire substrate were evaluated by ${\omega}-2{\theta}$ high-resolution X-ray diffraction. The a-plane GaN films were characterized by X-ray photoelectron spectroscopy (XPS) to determine carbon contamination from carbonized PR masks in the GaN film bulk. After $Ar^+$ ion etching, XPS spectra indicated that carbon contamination exists only in the surface region. Finally, the heat treatment of carbonized PR masks was used to grow high-quality a-plane GaN films without carbon contamination. This approach showed the promising potential of the ELO process by using a PR mask.

인삼의 출아 및 생육 특성에 대한 생장조절물질의 영향 (Effects of the Growth Regulators on the Emergence and Growth of Panax ginseng C.A. Meyer)

  • 정찬문;안상득;권우생
    • 한국작물학회지
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    • 제30권4호
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    • pp.368-374
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    • 1985
  • 생장조절물질인 GA, Kinetin 및 2,4-D를 농도별로 처리하여 출아 및 생육특성을 조사하므로서 출아에 필요한 장기 저온기간의 단축 가능성을 탐색하였던 바 그 결과를 요약하면 다음과 같다. 1. 신아의 출아는 처리물질중 GA효과가 가장 컸으며 처리농도가 증가할수록 조기출아되어 출아기간이 단축되었고 출아율도 높았다. 2. GA처리는 지상부 생육을 크게 신장시켰으며 특히 경장 엽병장의 신장을 촉진시켰다. 3. GA 50ppm, 100ppm처리구는 근중을 크게 증가시켰다. 4. GA처리농도가 높을수록 조기에 지상부 생육이 완료되었다. 5. 뇌포제거구는 무제거구에 비하여 출아가 다소 빠른 경향이나 생육은 대체로 비슷하였다.

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Manufacturing and Macroscopic Properties of Cold Sprayed Cu-Ga Coating Material for Sputtering Target

  • Jin, Young-Min;Jeon, Min-Gwang;Park, Dong-Yong;Kim, Hyung-Jun;Oh, Ik-Hyun;Lee, Kee-Ahn
    • 한국분말재료학회지
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    • 제20권4호
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    • pp.245-252
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    • 2013
  • This study attempted to manufacture a Cu-Ga coating layer via the cold spray process and to investigate the applicability of the layer as a sputtering target material. In addition, changes made to the microstructure and properties of the layer due to annealing heat treatment were evaluated, compared, and analyzed. The results showed that coating layers with a thickness of 520 mm could be manufactured via the cold spray process under optimal conditions. With the Cu-Ga coating layer, the ${\alpha}$-Cu and $Cu_3Ga$ were found to exist inside the layer regardless of annealing heat treatment. The microstructure that was minute and inhomogeneous prior to thermal treatment changed to homogeneous and dense with a more clear division of phases. A sputtering test was actually conducted using the sputtering target Cu-Ga coating layer (~2 mm thickness) that was additionally manufactured via the cold-spray coating process. Consequently, this test result confirmed that the cold sprayed Cu-Ga coating layer may be applied as a sputtering target material.