• Journal of Korean Vacuum Science & Technology
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• v.4 no.2
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• pp.47-49
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• 2000

We report on the fabrication and characterization of InGaN/GaN multiple quantum well light emitting diode (LED) with a highly transparent Pt ohmic contact as a current spreading layer. The value of light transmittance of a Pt thin film with a thickness of 8 m on p-GaN was measured to be 85% at 450nm. The peak wavelength and the full-width at half-maximum (FWHM) of the emission spectrum of the LED at 20 mA were 453 m and 23 m, respectively. Pt-contacted LEDs show good electrical properties and high light-output efficiency compared to Ni/Au-contacted ones. These results suggest that a Pt thin film can be used as an effective current spreading layer with high light-transparency.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.146-146
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• 2011

The blue light emitting diode (LED) structure based on non-polar a-plane (11-20) GaN which was coated TiO2 nanoparticles using spin coating method was grown on r-plane (1-102) sapphire substrates to improve light extraction efficiency. We report on the emission and structural properties with temperature dependence of photoluminescence (PL) and x-ray rocking curves (XRC). From PL results at 13 K of undoped GaN samples, basal plane stacking fault (BSF) and near band edge (NBE) emission peak were observed at 3.434 eV and 3.484 eV, respectively. We also found the temperature-induced band-gap shrinkage, which was fitted well with empirical Varshini's equation. The PL intensity of TiO2 nanoparticles ?coated multiple quantum well (MQW) sample is decayed slower than that of no coating sample with increasing temperature. The anisotrophic strain and azimuth angle dependence in the films were shown from XRC results. The full width at half maximum (FWHM) along the GaN [11-20] and [1-100] directions were 564.9 arcsec and 490.8 arcsec, respectively. A small deviation of FWHM values at in-plane direction is attributed to uniform in-plane strain.

• Journal of Korean Vacuum Science & Technology
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• v.4 no.3
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• pp.78-80
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• 2000

We reprot on the fabrication and characterization of InGaN/GaN multiple quantum well light-emitting diode (LED) with a highly transparent Pt ohmic contact as a current spreading layer. The value of light transmittance of a Pt thin film with a thickness of 8 nm on-GaN was measured to be 85% at 450 nm. The peak wavelength and the full-width at half-maximum (FWHM) of the emission spectrum of the LED at 20 mA were 453 nm and 23 nm, respectively. Pt-contacted LEDs show good electrical properties and high light-output efficiency compared to Ni/Au-contacted ones. These results suggest that a Pt thin film can be used as an effective current spreading layer with high light-transparency.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.196.2-196.2
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• 2013

본 연구에서는 분자선 에피택시 (MBE)법으로 성장된 InAs submonolayer quantum dot (SML-QD)을 태양전지에 응용하여 광학 및 전기적 특성을 평가하였다. 본 연구에서 사용된 양자점 태양전지(quantum dot solar cell, QDSC)의 구조는 n+-GaAs 기판 위에 n+-GaAs buffer와 n-GaAs base layer를 차례로 성장 한 후, 활성영역에 InAs/InGaAs SML-QD와 n-GaAs spacer layer를 8주기 형성하였다. 그 위에 p+-GaAs emitter, p+-AlGaAs window layer를 성장하고 ohmic contact을 위하여 p+-GaAs 를 성장하였다. SML-QD 구조의 두께는 0.3 ML 이며, 이때 SML-QD의 적층수를 4 stacks 으로 고정하였다. SML-QD 와의 비교를 위하여 2.0 ML크기의 InAs자발 형성 양자점 태양전지(SK-QDSC)과 GaAs 단일 접합 태양전지 (reference-SC)를 동일한 성장조건에서 제작하였다. PL 측정 결과, 300 K에서 SML-QD의 발광 피크는 SK-QD 보다 고에너지에서 나타나는데(1.349 eV), 이것은 SML-QD가 SK-QD보다 작은 크기를 가지기 때문으로 사료된다. SML-QD는 single peak를 보이는 반면, SK-QD는 dual peaks (1.112 / 1.056 eV)을 확인하였다. SML-QD의 반치폭(full width at half maximum, FWHM)이 SK-QD에 비하여 작은 것으로 보아 SML-QD가 SK-QD보다 양자점 크기 분포의 균일도가 높은 것으로 해석된다. Illumination I-V 측정 결과, SML-QDSC의 개방 전압(VOC) 과 단락전류밀도(JSC)는 SK-QDSC의 값과 비교해 보면, 각각 47 mV와 0.88 mA/cm2만큼 증가하였다. 이는 SK-QD보다 상대적으로 작은 크기를 가진 SML-QD로 인해 VOC가 증가되었으며, SML-QD가 SK-QD 보다 태양광을 흡수할 수 있는 영역이 비교적 적지만, QD내에 존재하는 energy level에서 탈출 할 수 있는 확률이 더 높음으로써 JSC가 증가한 것으로 분석 된다.

• The Transactions of the Korean Institute of Power Electronics
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• v.26 no.5
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• pp.325-333
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• 2021

A 3 kW grid-tied PV inverter with Gallium nitride high-electron mobility transistor (GaN HEMT) for domestic commercialization was developed using boost converter and full-bridge inverter with LCL filter topology. Recently, many GaN HEMTs are manufactured as surface mount packages because of their lower parasitic inductance characteristic than standard TO (transistor outline) packages. A surface mount packaged GaN HEMT releases heat through either top or bottom cooling method. IGOT60R070D1 is selected as a key power semiconductor because it has a top cooling method and fairly low thermal resistances from junction to ambient. Its characteristics allow the design of a 3 kW inverter without forced convection, thereby providing great advantages in terms of easy maintenance and high reliability. 1EDF5673K is selected as a gate driver because its driving current and negative voltage output characteristics are highly optimized for IGOT60R070D1. An LCL filter with passive damping resistor is applied to attenuate the switching frequency harmonics to the grid-tied operation. The designed LCL filter parameters are validated with PSIM simulation. A prototype of 3 kW PV inverter with GaN HEMT is constructed to verify the performance of the power conversion system. It achieved high power density of 614 W/L and peak power efficiency of 99% for the boost converter and inverter.

• KSII Transactions on Internet and Information Systems (TIIS)
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• v.12 no.12
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• pp.5860-5876
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• 2018

A single snapshot data can only provide limited amount of information so that the rank of covariance matrix is not full, which is not adopted to complete the parameter estimation directly using the traditional super-resolution method. Aiming at solving the problem, a joint time delay and angle estimation using matrix pencil method based on information reconstruction vector for orthogonal frequency division multiplexing (OFDM) signal is proposed. Firstly, according to the channel frequency response vector of each array element, the algorithm reconstructs the vector data with delay and angle parameter information from both frequency and space dimensions. Then the enhanced data matrix for the extended array element is constructed, and the parameter vector of time delay and angle is estimated by the two-dimensional matrix pencil (2D MP) algorithm. Finally, the joint estimation of two-dimensional parameters is accomplished by the parameter pairing. The algorithm does not need a pseudo-spectral peak search, and the location of the target can be determined only by a single receiver, which can reduce the overhead of the positioning system. The theoretical analysis and simulation results show that the estimation accuracy of the proposed method in a single snapshot and low signal-to-noise ratio environment is much higher than that of Root Multiple Signal Classification algorithm (Root-MUSIC), and this method also achieves the higher estimation performance and efficiency with lower complexity cost compared to the one-dimensional matrix pencil algorithm.

• The Transactions of the Korean Institute of Power Electronics
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• v.26 no.6
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• pp.404-410
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• 2021

This paper proposes a high step-up converter with zero-voltage transition (ZVT) cell for fuel cell electric vehicle. The proposed converter applies a ZVT cell to a dual floating output boost converter (DFOBC) so that not only the main switch but also the ZVT switch can achieve full-range soft switching. The current rating of the ZVT switch is 17% of the main switch. The proposed converter has high reliability in that no timing issue occurs. Therefore, online calculation is not required. The minimum turn-on time of the ZVT switch that guarantees soft switching at all loads and input/output voltage is obtained by analysis. In addition, the proposed DFOBC allows the use of a 650 V device even at 800 V output and has the advantage of being able to boost the voltage by 3.5 times with 0.56 duty. Planar coupled inductor with PCB winding was successfully implemented with the converter operated at 300 kHz. The 25 kW prototype achieves peak efficiency of 99% and power density of 63 kW/L.

• Steel and Composite Structures
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• v.13 no.3
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• pp.239-258
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• 2012

In this paper, experimental investigations on high strength steel (HSS) stud connected steel-concrete composite (SCC) girders to understand the effect of shear connector density on their flexural behaviour is presented. SCC girder specimens were designed for three different shear capacities (100%, 85%, and 70%), by varying the number of stud connectors in the shear span. Three SCC girder specimens were tested under monotonic/quasi-static loading, while three similar girder specimens were subjected to non-reversal cyclic loading under simply supported end conditions. Details of casting the specimens, experimental set-up, and method of testing, instrumentation for the measurement of deflection, interface-slip and strain are discussed. It is found that SCC girder specimen designed for full shear capacity exhibits interface slip for loads beyond 25% of the ultimate load capacity. Specimens with lesser degree of shear connection show lower values of load at initiation of slip. Very good ductility is exhibited by all the HSS stud connected SCC girder specimens. It is observed that the ultimate moment of resistance as well as ductility gets reduced for HSS stud connected SCC girder with reduction in stud shear connector density. Efficiency factor indicating the effectiveness of high strength stud connectors in resisting interface forces is estimated to be 0.8 from the analysis. Failure mode is primarily flexure with fracturing of stud connectors and characterised by flexural cracking and crushing of concrete at top in the pure bending region. Local buckling in the top flange of steel beam was also observed at the loads near to failure, which is influenced by spacing of studs and top flange thickness of rolled steel section. One of the recommendations is that the ultimate load capacity can be limited to 1.5 times the plastic moment capacity of the section such that the post peak load reduction is kept within limits. Load-deflection behaviour for monotonic tests compared well with the envelope of load-deflection curves for cyclic tests. It is concluded from the experimental investigations that use of HSS studs will reduce their numbers for given loading, which is advantageous in case of long spans. Buckling of top flange of rolled section is observed at failure stage. Provision of lips in the top flange is suggested to avoid this buckling. This is possible in case of longer spans, where normally built-up sections are used.

• Journal of the Korea institute for structural maintenance and inspection
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• v.28 no.3
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• pp.66-73
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• 2024

Stay-cable is one of the most important load carrying members in cable-stayed bridges. Monitoring structural integrity of stay-cables is crucial for evaluating the structural condition of the cable-stayed bridge. For stay-cables, tension and damping ratio are estimated based on modal properties as a measure of structural integrity. Since the monitoring system continuously measures the vibration for the long-term period, data acquisition systems should be stable and power-efficiency as the hardware system. In addition, massive signals from the data acquisition systems are continuously generated, so that automated analysis system should be indispensable. In order to fulfill these purpose simultaneously, this study presents an autonomous cable monitoring system based on domain-knowledge using IoT for continuous cable monitoring systems of cable-stayed bridges. An IoT system was developed to provide effective and power-efficient data acquisition and on-board processing capability for Edge-computing. Automated peak-picking algorithm using domain knowledge was embedded to the IoT system in order to analyze massive data from continuous monitoring automatically and reliably. To evaluate its operational performance in real fields, the developed autonomous monitoring system has been installed on a cable-stayed bridge in Korea. The operational performance are confirmed and validated by comparing with the existing system in terms of data transmission rates, accuracy and efficiency of tension estimation.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.189-189
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• 2012

Lead sulfide (PbS) nanocrystal quantum dots (NQDs) are promising materials for various optoelectronic devices, especially solar cells, because of their tunability of the optical band-gap controlled by adjusting the diameter of NQDs. PbS is a IV-VI semiconductor enabling infrared-absorption and it can be synthesized using solution process methods. A wide choice of the diameter of PbS NQDs is also a benefit to achieve the quantum confinement regime due to its large Bohr exciton radius (20 nm). To exploit these desirable properties, many research groups have intensively studied to apply for the photovoltaic devices. There are several essential requirements to fabricate the efficient NQDs-based solar cell. First of all, highly confined PbS QDs should be synthesized resulting in a narrow peak with a small full width-half maximum value at the first exciton transition observed in UV-Vis absorbance and photoluminescence spectra. In other words, the size-uniformity of NQDs ought to secure under 5%. Second, PbS NQDs should be assembled carefully in order to enhance the electronic coupling between adjacent NQDs by controlling the inter-QDs distance. Finally, appropriate structure for the photovoltaic device is the key issue to extract the photo-generated carriers from light-absorbing layer in solar cell. In this step, workfunction and Fermi energy difference could be precisely considered for Schottky and hetero junction device, respectively. In this presentation, we introduce the strategy to obtain high performance solar cell fabricated using PbS NQDs below the size of the Bohr radius. The PbS NQDs with various diameters were synthesized using methods established by Hines with a few modifications. PbS NQDs solids were assembled using layer-by-layer spin-coating method. Subsequent ligand-exchange was carried out using 1,2-ethanedithiol (EDT) to reduce inter-NQDs distance. Finally, Schottky junction solar cells were fabricated on ITO-coated glass and 150 nm-thick Al was deposited on the top of PbS NQDs solids as a top electrode using thermal evaporation technique. To evaluate the solar cell performance, current-voltage (I-V) measurement were performed under AM 1.5G solar spectrum at 1 sun intensity. As a result, we could achieve the power conversion efficiency of 3.33% at Schottky junction solar cell. This result indicates that high performance solar cell is successfully fabricated by optimizing the all steps as mentioned above in this work.