• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2006.04a
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• pp.133-133
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• 2006

• Proceedings of the Korean Vacuum Society Conference
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• 2009.02a
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• pp.251.1-251.1
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• 2009

• Proceedings of the Korean Vacuum Society Conference
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• 2006.08a
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• pp.128-128
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• 2006

• Journal of the Korean Institute of Telematics and Electronics
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• v.17 no.4
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• pp.45-52
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• 1980

In order to eliminate the phase errors caused by the finite GB product of operational amplifiers, novel integnator circuits are proposed. These circuits are characterized by their positive phase error angles and integrator selectivity. The positive sign of the Q and of the circuits compensates the negative selectivity and phase error angles, inherent in the integrated operational amplifiers. Miller inverting intergrator of a biquad circuit realized by Thomas is replaced by the proposed circuit and the band-pass frequency response of the modified biquad network is experimentally analyzed. A considerable improvement is recognized to such extent that the center frequency of the band-pass filter is allowed to be shifted up to 20KHz, which has been infeasible with conventional biquad networks.

• Journal of the Korean Institute of Telematics and Electronics C
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• v.34C no.11
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• pp.66-75
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• 1997

We derive the system design parameters to implement the receiving system for the PCS mobile station to satisfy the J-sTD-018 which is the PCS mobile station(MS) minimum performance. Also we analyze the system performance and intermodulation spurious due to the values of a device cause the system performance degradation, is proposed. The simulation shows the receiver's maximum system noise figure to satisfy the receiver selectivity is approximately 11 dB. While the MS noise figure is 10dB with system margin 1 dB, the minimum selectivity is -71 dB at 1.25MHz frequency offset from the carrier frequency. And the input 3rd order intercept point of the MS class I and the MS class II~V is -9.5 dBm and -14dBm respectively. When the interference power level at the receiver is small, the receiver has better performance as we increase the gain of the LNA. However, when the interference level at the receiver is large, the receiver performance is heavily affected by the spurious as we increase the gain of the LNA. Thus, we proved the effectiveness of the LNA On/Off switching technique as to reduce the effect of the spurious.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.376-377
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• 2013

반도체산업이 발전함에 따라 패턴이 점점 더 복잡해 지고 있다. 이에 따라 웨이퍼 위에 올려지는 layer도 개수도 많아지고 점점 더 두꺼워진다. 예전에는 수백 nm였지만 최근에는 um단위까지 두꺼워지고 있다. 하지만 mask 역할을 하는 ACL과 substrate (SiO2)의 selectivity는 일정하기 때문에 mask 역할을 하는ACL layer 역시 두꺼워지는 것이 불가피하다. 이로인해 예전에는 없었던 문제들이 발생하기 시작한다. Mask 역할을 하는 ACL layer가 얇고 패턴 크기가 클 때에는 아무런 문제도 없었지만 ACL layer도 두꺼워 지고 패턴 크기도 수십 nm로 작아졌기 때문에 ACL 역시 식각 공정을 할 때 어려움이 생기기 시작한다. 이를 해결하기 위한 하나의 방법으로 자화된 ICP 챔버 substrate에 Dual bias frequency 인가하여 식각해 보고 이와같이 하였을 때 식각특성을 분석해 보았다. 자화된 ICP 챔버에서 substrate에 dual bias frequency를 인가함으로써 ion energy와 ion flux에 변화가 생기게 되고 이로 인해 다른 식각 특성이 나타나게 되었다. Dual bias frequency의 비율을 변화시켜 보고 변화에 따른 식각 특성을 분석해 보았다. 이와 같은 과정을 통하여 높은 주파수와 낮은 주파수의 각각의 변화에 따른 식각특성의 변화에 대한 이해를 할 수 있었다.

• ETRI Journal
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• v.44 no.6
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• pp.925-935
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• 2022

In this study, we propose a limited feedback-based frequency divided group beamforming with sparse space-frequency transmit diversity coded orthogonal frequency division multiplexing (OFDM) system for ultrareliable low latency communication (URLLC) scenario. The proposed scheme has several advantages over the traditional hybrid beamforming approach, including not requiring downlink channel state information for baseband precoding, supporting distributed multipoint transmission structures for diversity, and reducing beam sweeping latency with little uplink overhead. These are all positive aspects of physical layer characteristics intended for URLLC. It is suggested in the system to manage the multipoint transmission structure realized by distributed panels using a power allocation method based on cooperative game theory. Link-level simulations demonstrate that the proposed scheme offers reliability by achieving both higher diversity order and array gain in a nonline-of-sight channel of selectivity and limited spatial scattering.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.472-472
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• 2011

The capacitive coupled plasma (CCP) has been extensively used in the semiconductor industry because it has not only good uniformity, but also low electron temperature. But CCP source has some problems, such as difficulty in varying the ion bombardment energy separately, low plasma density, and high processing pressure, etc. In this reason, dual frequency CCP has been investigated with a separate substrate biasing to control the plasma parameters and to obtain high etch rate with high etch selectivity. Especially, in this study, we studied on the etching of $SiO_2$ by using the pulse-time modulation in the dual-frequency CCP source composed of 60 MHz/ 2 MHz rf power. By using the combination of high /low rf powers, the differences in the gas dissociation, plasma density, and etch characteristics were investigated. Also, as the size of the semiconductor device is decreased to nano-scale, the etching of contact hole which has nano-scale higher aspect ratio is required. For the nano-scale contact hole etching by using continuous plasma, several etch problems such as bowing, sidewall taper, twist, mask faceting, erosion, distortions etc. occurs. To resolve these problems, etching in low process pressure, more sidewall passivation by using fluorocarbon-based plasma with high carbon ratio, low temperature processing, charge effect breaking, power modulation are needed. Therefore, in this study, to resolve these problems, we used the pulse-time modulated dual-frequency CCP system. Pulse plasma is generated by periodical turning the RF power On and Off state. We measured the etch rate, etch selectivity and etch profile by using a step profilometer and SEM. Also the X-ray photoelectron spectroscopic analysis on the surfaces etched by different duty ratio conditions correlate with the results above.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.11a
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• pp.251-252
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• 2006

A development of surface acoustic wave gas sensor to detecting volatile gas has been observed by monitoring output signal as function of time onto the network analyzer. The SAW sensor with a center frequency of 200MHz was fabricated on $42^{\circ}$ S-T Quartz substrates. Using the gas chromatography column has been selectivity. Experimental results, which show the phase change of output signal under the absorption of volatile gas onto sensors, were presented. The proposed sensor has the properties of high sensitivity compare to the conventional SAW gas sensor and chemical selectivity. Thus, it is thought these results are applicable for use in sensor array of an high performance electronic nose system.

• Journal of the Semiconductor & Display Technology
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• v.2 no.3
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• pp.7-11
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• 2003

In this research, the etching characteristics of via contact and deep contact hole have been studied using multi-pole inductively coupled plasma(MICP) etching system. We investigated Plasma density of MICP source using the Langmuir probe and etching characteristics with RF frequency, wall temperature, chamber gap, and gas chemistry containing Carbon and Fluorine. As the etching time increases, formation of the polymer increases. To improve the polymer formation, we controlled the temperature of the reacting chamber, and we found that temperature of the chamber was very effective to decrease the polymer thickness. The deep contact etch profile and high selectivity(oxide to photoresist) have been achieved with the optimum mixed gas ratio containing C and F and the temperature control of the etching chamber.