• 전자공학회논문지C
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• 제35C권6호
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• pp.30-38
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• 1998

본 논문에서는 능동필터 설계시 기본 블록으로 이용될 수 있으며, 저전압 고주파에서 동작 가능한 새로운 구조의 CMOS 전류모드 적분기를 제안하였다. 더불어 전압조절을 통해 그 이득과 주파수를 제어할 수 있는 트랜스컨덕턴스 제어회로를 설계하였다. 제안된 적분기는 CMOS 상보형 회로로 구성하였으며, 따라서 적분기의 단위이득주파수에 영향을 주는 적분기의 트랜스컨덕턴스를 증가 시켰다. 제안된 적분기의 단위이득 주파수는 NMOS-gm을 가지는 기존의 적분기에 비하여 두 배 가까이 증가되었다. 또한 트랜스컨덕턴스 제어회로를 이용하여 능동필터의 공정시 나타날 수 있는 오차를 줄이고, 그 용도에 따라 주파수와 이득제어를 가능하게 하였다. 이의 응용회로로서 3차 체비셰프 저역필터를 0.8㎛ CMOS 파라메터를 이용하여 설계하였으며, 이러한 결과들은 소신호 해석 및 0.8㎛ 공정 파라미터를 갖는 HSPICE 시뮬레이션을 통하여 검증되었다.

• 대한의용생체공학회:학술대회논문집
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• 대한의용생체공학회 1996년도 춘계학술대회
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• pp.240-242
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• 1996

In this paper, we proposed a method of a hearing aid suitable for the sensorineural hearing impaired. Generally as the sensorineural hearing impaired have narrow audible ranges between threshold and discomfortable level, the speech spectrum may easily go beyond their audible range. Therefore speech spectrum must be optimally amplified and compressed into the impaired's audible range. The level and frequency of input speech signal are varied continuously. So we have to make compensation input signal for frequency-gain loss of the impaired, specially in the frequency band which includes much information. The input sigaal is divided into short time block and spectrum within the block is calculated. The frequency-gain characteristic is determined using the calculated spectrum. The number of frequency band and the target gain which will be added input signal are estimated. The input signal within the block is processed by a single digital filter with the calculated frequency-gain characteristics. From the results of monosyllabic speech tests to evaluate the performance of the proposed algorithm, the scores of test were improved.

• Transactions on Electrical and Electronic Materials
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• 제2권4호
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• pp.1-6
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• 2001

In this paper, a 1.5 V high-gain high-frequency CMOS complementary operational amplifier is presented. The input stage of op-amp is designed for supporting the constant transconductance on the Input stage by consisting of the parallel-connected rail-to-rail complementary differential pairs. And consisting of the class-AB rail-to-rail output stage using the concept of elementary shunt stage and the grounded-gate cascode compensation technique for improving the low PSRR which was a disadvantage in the general CMOS complementary input stage, the load dependence of open loop gain and the stability of op- amp on the output load are improved, and the high-gain high-frequency operation can be achieved. The designed op-amp operates perfectly on the complementary mode with the 180° phase conversion for a 1.5 V supply voltage, and shows the DC open loop gain of 84 dB, the phase margin of 65°, and the unity gain frequency of 20 MHz. In addition, the amplifier shows the 0.1 % settling time of .179 ㎲ for the positive step and 0.154 ㎲ for the negative step on the 100 mV small-signal step, respectively, and shows the total power dissipation of 8.93 mW.

• 전기학회논문지
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• 제58권7호
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• pp.1386-1392
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• 2009

An analysis is presented for super-high-speed optical demodulation by an avalanche photodiode(APD) with electric mixing. A normalized gain is defined to evaluate the performance of the optical mixing detection. Unlike previous work, we include the effect of the nonlinear variation of the APD capacitance with bias voltage as well as the effect of parasitic and amplifier input capacitance. As a results, the normalized gain is dependent on the signal frequency and the frequency difference between the signal and the local oscillator frequency. However, the current through the equivalent resistance of the APD is almost independent of signal frequency. The mixing output is mainly attributed to the nonlinearity of the multiplication factor. We show also that there is an optimal local oscillator voltage at which the normalized gain is maximized for a given avalanche photodiode.

• Current Optics and Photonics
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• 제7권1호
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• pp.28-32
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• 2023

Frequency characteristics of gain-saturated erbium-doped fiber amplifier (EDFA) are experimentally evaluated to mitigate the optical signal fluctuation induced by atmospheric turbulence in terrestrial freespace optical communication systems. Here, an acousto-optic modulator (AOM) is used to emulate optical signal fluctuations induced by atmospheric turbulence. The waveform which is generated in proportion to the refractive-index structural parameters is used to drive the AOM at various periodic frequencies. Thus, the dependence of the signal fluctuation suppression on the frequency is evaluated. The experiment is conducted using a periodic frequency sweep of the AOM driving voltage waveform and signal input power variation of the amplifier. It is observed that a low periodic frequency and high input signal power effectively suppress the optical signal fluctuation. This study evaluates the experimental results from the high-pass filter and gain-saturation characteristics of the EDFA.

• 재활복지공학회논문지
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• 제5권1호
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• pp.41-46
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• 2011

감각신경성 난청의 원인 중 하나는 내이에 존재하는 와우(cochlea)의 기능적 이상 때문이다. 와우에서 내유모세포(inner hair cell, IHC)나 신경의 기능적 이상이 있는 곳을 'dead region'이라고 한다. 보청기에서 dead region에 속하는 주파수 영역의 증폭은 효과가 미약한 것으로 알려져 있다. 본 논문에서는 dead region의 위치에 따른 음성신호의 인지 능력 비교와 dead region이 존재할 때 보청기의 효과적인 이득값을 알아보기 위해 WRS 검사와 선호도 조사를 실시하였다. WRS(Word Recognition Score)검사와 선호도 조사를 위해 정상 청력 능력을 지닌 성인 남녀 8명을 대상으로, white noise와 babble noise를 이용하여 신호 대 잡음비(SNR) 0dB의 조건으로 검사음과 혼합하였으며, dead region의 영역을 세 가지로 분류하였다. 주파수 영역에 따라 low-frequency, mid-frequency, high-frequency dead region으로 나누고, 각 dead region에 따라 14.5 dB, 11.5 dB, 6 dB의 증폭 이득을 다르게 하여 결과를 비교하였다. dead region의 위치에 따른 검사 결과는 각 영역별로 차이가 있었다. WRS 검사결과 low-frequency dead region일 때 보다, mid-frequency dead region나 high-frequency dead region일 때의 WRS점수와 선호도 평가가 높게 나왔으며, 증폭 이득값의 차이를 비교해 보았을 때, 14.5 dB의 이득에 비해 낮은 이득을 주었을 때 WRS 검사 결과값이 더 높게 나왔으며, 높은 이득일수록 선호도 조사에서 낮은 점수를 받았다.

• 한국전기전자재료학회논문지
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• 제17권2호
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• pp.171-177
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• 2004

Voltage step-down characteristics in Ring/Dot type piezoelectric transformer were examined as a function of the area of input electrode when the area of output electrode is fixed. The effects of driving frequency and load resistance on the voltage step-down characteristics were also examined. Voltage gain was greatly dependent on the driving frequency and load resistance, and showed a maximum gain at resonance frequency of the step-down transformer. The frequency where the maximum cutout voltage appears increased about 0.2％ as the load resistance increased from 10 to 150 Ω. As the area of input electrode increased, the voltage gain and the efficiency of the transformer increased. Frequency dependence of efficiency of the step-down transformer revealed a similar tendency with the voltage gain curves. The maximum efficiency remarked 94% when the input voltage and the load resistance were 20 Vpp and 120 Ω, respectively.

• 한국광학회지
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• 제17권2호
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• pp.143-148
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• 2006

광섬유 내 브릴루앙 산란의 이득 스펙트럼을 측정하는 새로운 방법을 제안하고 실험하였다. 기존의 측정 방식과는 달리, 주입전류를 직접 변조하여 광주파수 변조된 하나의 레이저 다이오드로부터 펌프광과 프로브광을 발생시키고, 주입전류를 사각파로 변조할 때 나타나는 광주파수 처핑을 이용하여 펌프/프로브간 광주파수 차이를 연속적으로 변화시키는 방법으로 브릴루앙 이득 스펙트럼을 측정하였다. 통신용 단일모드 광섬유의 브릴루앙 이득 스펙트럼을 측정하여 기존 문헌의 결과와 거의 일치하는 결과를 얻었다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.2
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• pp.722-725
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• 2004

Voltage step-down characteristics in Ring/Dot type piezoelectric transformer were examined as a function of the area of input electrode when the area of output electrode is fixed. The effects of driving frequency and load resistance on the voltage step-down characteristics were also examined. Voltage gain was greatly dependent on the driving frequency and load resistance, and showed a maximum gain at resonance frequency of the step-down transformer. The frequency where the maximum output voltage appears increased about 0.2% as the load resistance increased from 10 to $150\Omega$. As the area of input electrode increased, the voltage gain and the efficiency of the transformer increased. Frequency dependence of efficiency of the step-down transformer revealed a similar tendency with the voltage gain curves. The maximum efficiency remarked 94% when the input voltage and the load resistance were 20 $V_{PP}$ and $120\Omega$, respectively.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 하계학술대회 논문집
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• pp.840-843
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• 2001

In this study, temperature dependency of current gain for AlGaAs/GaAs/GaAs HBT is analytically proposed over the temperature range between 300K and 600K. Energy bandgap, effective mass, intrinsic carrier concentration are considered as temperature dependent parameters. Collector current which is numerically calculated is then analytically expressed to enhance the speed of calculation for current gain. From the results, current gain decreases as the temperature increases. These results will be used to expect the unity current gain frequency f$_{T}$ in conjunction with emitter-base and collector- base capacitances.s.