• 한국전자파학회논문지
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• 제12권2호
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• pp.293-298
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• 2001

Polyaniline(EB)/NMP 용액에 carbonblack, grahpite Ag를 첨가하여 우수한 막질의 free standing film을 제조하였다. 1 mole HCI로 도핑된 polyaniline(ES) free standing film($\sigma$=5 S/cm, t=0.14 mm)을 제조하여 10 MHz~1 GHz의 주파수 영역에서 전자기파 차폐효과를 측정한 결과 23~25 dB의 차폐효율을 나타내었으며, carbonblack, grahpite, AG을 첨가하여 제조한 ES free standing film 과 camphorsulfonic acid(CSA)를 도핑한 polyaniline film의 전자기파 차폐효율 측정결과 각각 30~34dB, 36~42dB, 44~52dB, 34~43dB로 ES free standing film 보다 우수한 특성을 나타내었다.

• 한국결정성장학회:학술대회논문집
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• 한국결정성장학회 1999년도 PROCEEDINGS OF 99 INTERNATIONAL CONFERENCE OF THE KACG AND 6TH KOREA·JAPAN EMG SYMPOSIUM (ELECTRONIC MATERIALS GROWTH SYMPOSIUM), HANYANG UNIVERSITY, SEOUL, 06월 09일 JUNE 1999
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• pp.337-350
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• 1999

Thick diamond film having ~700${\mu}{\textrm}{m}$ thickness was deposited on polycrystalline molybdenum (Mo) substrate using high power (4kW) microwave plasma enhanced chemical vapor deposition (MPECVD) system. We could achieve free-standing diamond film via detaching as-deposited diamond film from the substrate by rapid cooling them under vacuum. We investigated the variation of photoconductivity after exposing the film surface to either oxygen or hydrogen plasma. At as-grown state, the growth side (the as-grown surface of the film) showed noticeable photoconductivity. The oxygen plasma treatment of this side led to the insulator. After exposing the film surface to hydrogen plasma, on the other hand, we could observe the reappearing of photoconductivity at the growth side. Based on these results, we suggest that the hydrogen plasma treatment may enhance the photoconductivity of free-standing diamond film.

• 한국결정성장학회지
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• 제9권4호
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• pp.441-445
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• 1999

Thick diamond film having $~700\mu\textrm{m}$ thickness was deposited on polycrystalline molybdenum(Mo) substrate using high power (4 kW) microwave plasma-enhanced chemical vapor depostion (MPECVD) system. We could achieve free-standing diamond film via detaching as-deposited diamond film from the substrate by rapid cooling them under vacuum. We investigated the variation of photoconductivity after exposing the film surface to either oxygen or hydrogen plasma. At as-grown state, the growth side (the as-grown surface of the film) showed noticeable photoconcuctivity. The oxygen plasma treatment of this side led to the insulator. After exposing the film surface to hydrogen plasma, on the other hand, we could observe the reappearing of photoconductivity at the growth side. Based on these results, we suggest that the hydrogen plasma treatment may enhance the photoconductivity of free-standing diamond film.

• Journal of Korean Vacuum Science & Technology
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• 제3권1호
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• pp.10-15
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• 1999

Using micro-wells on the Mo substrate, we could obtain various tubular-volcano-types of free-standing diamond field emitters by depositing a diamond film detaching the film and turning the film upside down. The field emission characteristics of these structures were investigated as a function of size, shape and the number density of the tubular-volcano-type diamond field emitters. The field emission characteristics, especially the current density, were greatly enhanced with increasing the number density of the tubular-volcano-type diamond field emitters on the Mo substrate. Based on these results, we suggest that the reduction of the well size can give better field emission characteristics by the increase in the number density of the tubular-volcano-type diamond field emitters. Finally, we suggest the feasibility of fabricating a large-area field emission display using our patterned tubular-volcano-type free-standing diamond field emitters.

• 대한전자공학회논문지SD
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• 제37권3호
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• pp.14-19
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• 2000

Seed crystal 로 bare (0001) 사파이어 기판을 사용하여 hydride vapor Phase epitaxy (HVPE)법을 이용하여 free-standing GaN 단결정기판을 성장시켰다. 일정한 두께의 GaN막을 성장한 후 사파이어 기판을 mechanical polishing 작업으로 제거하여 두께 200 ㎛, 10×10 ㎛ 크기의 free-standing GaN 기판을 얻을 수 있었으며, 성장 전 GaCl 전처리를 수행함으로써 crack이 없는 기판을 제작할 수 있었다. 이렇게 제작된 free-standing GaN 기판의 특성을 SiO/sub 2/ patterned sapphire위에 LEO (Lateral Epitaxial Overgrowth) 방법으로 성장된GaN박막과 double crystal x-ray diffraction (DC-XRD), cathode-luminescence (CL) 및 photoluminescence (PL) 방법으로 특성을 비교하였다.

• 대한화학회지
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• 제45권4호
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• pp.351-356
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• 2001

철, 코발트, 니켈 합금을 이용한 탄소확산-수소플라즈마 에칭법으로 다이아몬드 자체막의 표면을 매우 평탄하게 할 수 있었다. 이 방법에서의 다이아몬드 자체막을 합금과 몰리브데늄 기판 사이에 위치시켜 금속-다이아몬드-몰리브데늄(MDM) 샌드위치 형태의 샘플 세 트를 이루게 하였다. 이 샘플세트를 마이크로 웨이브 플라즈마 장치에 장착하여 수소 플라즈마를 발생시켜서 기판온도가 섭씨 1,000 이상이 되도록 하였다. 이와 같은 과정들은 탄소확산-수소플라즈마 방법이라고 하였다. 다이아몬드 자체막 표면을 에칭한 후 표면 거칠기, 표면형상, 에칭한 다이아몬드 표면속의 불순물의 침투를 조사하였다. 결론적으로, 탄소 확산-수소 플라즈마 에칭법은 전자 디바이스에 응용할 수 있는 매우 평탄한 다이아몬드 표면을 형성시키는 방법임을 알 수 있다.

• 한국분말야금학회:학술대회논문집
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• 한국분말야금학회 2006년도 Extended Abstracts of 2006 POWDER METALLURGY World Congress Part2
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• pp.1107-1108
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• 2006

The coating of conductive polypyrrole (Ppy) on nonconductive ceramic substrates was performed by polymerization of pyrrole (Py) in an aqueous solution. The Ppy film was characterized by scanning electron microscopy and conductivity measurements. Electrophoretic deposition of bimodal alumina suspension prepared with a phosphate ester was performed using Ppy film as a cathode. Fabrication of alumina ceramics with irregular shapes or complicated patterns were also attempted by sintering the deposits together with the Ppy coated substrates in air.

• 센서학회지
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• 제26권3호
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• pp.186-191
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• 2017

In this study, we investigated the simultaneous detection properties of organic vapor, pressure difference, and magnetic field using a single rugate-structured free-standing porous silicon (RFPS) thin film. Both the wavelength and the intensity of the rugate peaks were changed in the reflectivity spectrum measured at the thin film surface while the organic vapor was exposed to the RFPS thin film. However, when the pressure difference and the magnetic field were exposed to the film, only the rugate peak intensity was changed. Therefore, it is possible to distinguish whether or not the organic vapor is detected by simultaneously changing the rugate peak wavelength and intensity. In addition, a method of distinguishing between the pressure difference and the magnetic field detection signal has been derived by rapidly modulating the direction of the magnetic field. This study shows that it is possible to simultaneously detect and distinguish various objects using a single RFPS thin film, and it is found that porous silicon can be utilized as a sensor sufficiently.

• 통합자연과학논문집
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• 제7권1호
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• pp.1-4
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• 2014

Distributed Bragg reflector porous silicon of different characteristics were formed to determine their optical constants in the visible wavelength range using a periodic square wave current between low and high current densities. The surface and cross-sectional SEM images of distributed Bragg reflector porous silicon were obtained using a cold field emission scanning electron microscope. The surface image of distributed Bragg reflector porous silicon indicates that the distributions of pores are even. The cross-sectional image illustrates that the multilayer of distributed Bragg reflector porous silicon exhibits a depth of few microns and applying of square current density during the etching process results two distinct refractive indices in the contrast. Distributed Bragg reflector porous silicon exhibited a porosity depth profile that related directly to the current-time profile used in etch. Its free-standing film was obtained by applying an electro-polishing current.

• Journal of Magnetics
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• 제12권1호
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• pp.27-30
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• 2007

Experimental evidence suggests that spin pinning conditions for standing spin mode in polycrystalline $Ni_{84}Fe_{16}$ alloy film, is confirmed using the four categories of Camley et al. and the value of q$\bot$ for the pinning conditions, this was achieved by performing Brillouin light scattering measurements. The value of q$\bot$ was observed, in order to increase at a rate of $\pi$/2 with an increasing mode number. With this condition, the coexistence of standing spin wave modes was shown, with intermediate pinning, in addition to free and strong pinning. The values for spin-wave-stiffness constant ($D_B$), g-factor (g), and surface magnetization (4$\pi$M) of the Permalloy film were obtained from the results of BLS, and determined to be $D_B=1.85{\pm}0.05Oecm^2$, $g=2.11{\pm}0.02$, and 4$\pi$M=8.7 kG, respectively.