• Bulletin of the Korean Chemical Society
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• v.20 no.10
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• pp.1149-1152
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• 1999

1H NMR spectrum of a DMF-d7 solution containing 4-aminopyrimidine and [SiW11CoIIO39]6- (SiW11Co) shows separate peaks from two linkage isomers, a and b, in which N(1) and N(3) of the pyrimidine ring are coordinated to SiW11Co, respectively. The signal from the amine group in the isomer a exhibits temperature dependence that is characteristic of a two-site exchange problem. Rates of internal rotation of the amine group were determined by simulating the NMR spectra at 5-35℃. The amine group of free 4-aminopyrimidine also shows temperature-dependent spectra at lower temperatures; rates of internal rotation at (-25)-25℃ were determined. The internal rotation of the amine group in the complex is much slower than that for free 4-aminopyrimidine, indicating that π-character of the C-N bond increases on coordination to SiW11Co. The amine group in the isomer b does not show such behavior. It is probable that hydrogen bonding between N-H and a bridging oxygen atom of SiW11Co prevents it from rotating at low temperatures.

• Journal of the Korean Vacuum Society
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• v.2 no.2
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• pp.199-208
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• 1993

The effect of nucleation free energy related to Si surface states on diamond film growth behavior has been studied. Ar first, the three kinds of diamond thin films (A, B, C) were deposited on various Si substrates (A-Si, B-Si, C-Si) whose surfaces were polished with 1 ${\mu}m$ diamond paste, 6 ${\mu}m$ Al_2O_3$ powder and 12 ${\mu}m$ Al_2O_3$ powder respectively. And then, relative nucleation free energy calculated is ${\Delta}G_{A-Si}<{\Delta}G_{B-Si}<{\Delta}G_{C-Si}$. Although there are some difference in grain size, shape and nucleated size, the thin films on A-Si and B-Si were diamond including a small amount of DLC which was confirmed by AES, SEM, XRD, and RHEED. Namely, the diamonds of films (B) were not nucleated in scratches but in dents and larger in grain size compare with the film (C) of which diamond sere nucleated not only scratches but also dents. And, the sphere diamond which is not general shape was grown on C-Si. After all, the sphere was turned out to be the diamond including much graphite as a result of the AES in situ depth profiling. Consequently, the diamond shape and quality grown on Si were Changed from the crystal which the (100) and (110) planes were predominent to the crystal in which (111) plane was predominent, and newt to sphere shape diamond including much graphite according as the nucleation free energy increases.

• Advances in nano research
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• v.7 no.2
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• pp.99-108
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• 2019

Higher-order theories are very important to investigate the mechanical properties and behaviors of nanoscale structures. In this study, a free vibration behavior of SiNW resting on elastic foundation is investigated via Eringen's nonlocal elasticity theory. Silicon Nanowire (SiNW) is modeled as simply supported both ends and clamped-free Euler-Bernoulli beam. Pasternak two-parameter elastic foundation model is used as foundation. Finite element formulation is obtained nonlocal Euler-Bernoulli beam theory. First, shape function of the Euler-Bernoulli beam is gained and then Galerkin weighted residual method is applied to the governing equations to obtain the stiffness and mass matrices including the foundation parameters and small scale parameter. Frequency values of SiNW is examined according to foundation and small scale parameters and the results are given by tables and graphs. The effects of small scale parameter, boundary conditions, foundation parameters on frequencies are investigated.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.524-525
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• 2005

The principal problems in development of dielectric paste materials for PDP(plasma display panel)are PbO free paste and low melting temperature. We prepared PbO free paste from glasses in the system $ZnO-B_2O_3-Bi_2O_3-SiO_2$, DTA, and XRD were used to characterize $ZnO-B_2O_3-Bi_2O_3-SiO$ glasses. In this present study, PbO free paste had thermal expansion of $74\times10^{-7}/^{\circ}C$, DTA transformation point of $470^{\circ}C$, and firing condition of $540^{\circ}C$, 20min.

• Journal of the Korean Ceramic Society
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• v.49 no.6
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• pp.523-527
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• 2012

Silicon carbide (SiC) has recently drawn an enormous amount of industrial interest due to its useful mechanical properties, such as its thermal resistance, abrasion resistance and thermal conductivity at high temperatures. In this study, RF thermal plasma (PL-35 Induction Plasma, Tekna CO., Canada) was utilized for the synthesis of high-purity SiC powder from an organic precursor (hexamethyldisilazane, vinyltrimethoxysilane). It was found that the SiC powders obtained by the RF thermal plasma treatment included free carbon and amorphous silica ($SiO_2$). The SiC powders were further purified by a thermal treatment and a HF treatment, resulting in high-purity SiC nano-powder. The particle diameter of the synthesized SiC powder was less than 30 nm. Detailed properties of the microstructure, phase composition, and free carbon content were characterized by X-ray diffraction (XRD), field emission scanning electron microscopy (FE-SEM), a thermogravimetric (TG) analysis, according to the and Brunauer-Emmett-Teller (BET) specific surface area from N2 isotherms at 77 K.

• Journal of the Korean Society of Radiology
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• v.16 no.5
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• pp.545-551
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• 2022

This study analyzed the correlation between stress measurements calculated through HRV signals and thyroid function test items. 181 healthy adults without disease who visited Clinic K were the subjects of this study. Stress resistance (SR) and stress index (SI) were calculated using the acquired HRV signal, and TSH, Free T4, and T3 were used as thyroid function test items. For the measured values, the relationship between each item was statistically analyzed through Pearson correlation analysis. From the results, it was confirmed that Free T4 and SR had a positive correlation (r=0.18) and a negative correlation with SI (r=-0.16). Through this, it was confirmed that there is a significant relationship between thyroid function and HRV signal.

• Korean Journal of Metals and Materials
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• v.46 no.2
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• pp.58-64
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• 2008

Surface-void defects observed on the galvannealed(GA) steel sheets in Interstitial-free high-strengthened steels containing Si and Mn have been investigated using the combination of the FIB(Focused Ion Beam) and FE-TEM(Field Emission-Transmission Electron Microscope) techniques. The scanning ion micrographs of cross-section microstructure of defects showed that these defects were identified as craters which were formed on the projecting part of the substrate surface. Also, those craters were formed on the Si or Mn-Si oxides film through the whole interface between galvannealed coating and steel substrate. Interface enrichments and oxidations of the active alloying elements such as Si and Mn during reduction annealing process for galvanizing were found to interrupt Zn and Fe interdiffusion during galvannealing process. During galvannealing, Zn and Fe interdiffusion is preferentially started on the clean substrate surface which have no oxide layer on. And then, during galvannealing, crater is developed with consumption of molten zinc on the oxide layer.

• Journal of Korea Foundry Society
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• v.29 no.2
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• pp.70-77
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• 2009

The aim of this study was to develop a Mo and V free low alloy cast steel materials, enabling the significant cost- and time-savings in manufacturing and maintaining the insert of cold pressing die without impairment of the important properties. For this purpose, the effects of Si content on combinations of important properties such as hardness, hardenability, and weldability, and strength were systematically investigated. In order to evaluate the applicability as the insert of cold pressing die, the mechanical properties were measured after spheroidization annealing, quenching and tempering, and flame hardening heat treatments, respectively. After the Q/T and F.H. treatments, the developed 0.8${\sim}$1.6%Si containing Mo and V free low alloy cast steels showed excellent matrix strengthening effect, hardenability, and weldability, fulfilling the industrial criterion of the mechanical properties for automobile cold pressing die insert.

• Applied Science and Convergence Technology
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• v.27 no.5
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• pp.90-94
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• 2018

The electron band structure of manganese-adsorbed graphene on an SiC(0001) substrate has been studied using angle-resolved photoemission spectroscopy. Upon introducing manganese atoms, the conduction band of graphene, that is observed in pristine graphene indicating intrinsic electron-doping by the substrate, completely disappears and the valence band maximum is observed at 0.4 eV below Fermi energy. At the same time, the slope of the valence band decreases by the presence of manganese atoms, approaching the electron band structure calculated using the local density approximation method. The former provides experimental evidence of the formation of nearly free-standing graphene on an SiC substrate, concomitant with a metal-to-insulator transition. The latter suggests that its electronic correlations are efficiently screened, suggesting that the dielectric property of the substrate is modified by manganese atoms and indicating that electronic correlations in grpahene can also be tuned by foreign atoms. These results pave the way for promising device application using graphene that is semiconducting and charge neutral.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.11
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• pp.958-962
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• 2002

This paper reports on the fabrication of free-standing microstructures by DRIE (deep reactive ion etching). SOI (Si-on-insulator) structures with buried cavities are fabricated by SDB (Si-wafer direct bonding) technology and electrochemical etch-stop. The cavity was formed the upper handling wafer by Si anisotropic etch technique. SDB process was performed to seal the formed cavity under vacuum condition at -760 mmHg. In the SDB process, captured air and moisture inside of the cavities were removed by making channels towards outside. After annealing (100$0^{\circ}C$, 60 min.), the SDB SOI structure with a accurate thickness and a good roughness was thinned by electrochemical etch-stop in TMAH solution. Finally, it was fabricated free-standing microstructures by DRIE. This result indicates that the fabrication technology of free-standing microstructures by combination SDB, electrochemical etch-stop and DRIE provides a powerful and versatile alternative process for high-performance bulk micromachining in MEMS fields.