• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.403-403
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• 2012

그래핀(graphene)은 우수한 전기적, 물리적인 특성을 지닌 물질로써 다양한 분야에서 이를 활용하려는 노력들이 활발히 진행되고 있다. 그중 그래핀을 채널로 이용하는 전계효과 트랜지스터(field effect transistor)로의 응용에 있어, 가장 핵심적인 도전과제는 전하농도(carrier concentration)의 제어 및 에너지 밴드갭(energy bandgap) 형성이라 할수 있다. 최근 다양한 물질을 이용한 도핑을 통해 이를 해결하기 위한 노력들이 진행되고 있는 추세이다. 본 연구에서는 열화학 기상 증착법(Thermal chemical vapor deposition)을 통해 합성된 단일층의 그래핀에 염화니켈 나노입자의 분산액을 스핀코팅 한후 열처리를 통해 그래핀-니켈 나노입자의 하이브리드 구조를 제작하였다. 제작된 그래핀-니켈 나노입자 하이브리드 물질의 구조적 특징을 주사 전자 현미경(Scanning electron microscope)과 원자힘 현미경(Atomic force microscopy)을 통하여 확인하였다. 또한 니켈 분산액의 농도와 도핑효과 와의 상관관계를 라만분광법(Raman spectroscopy)과 이온성 용액법(Ionic liquid)을 이용한 전계효과 특성분석을 통해 조사하였다. 나노입자의 형성 메커니즘은 X-선 광전자 분광법(X-ray photoelectron spectroscopy)을 통하여 규명하였다.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.298.1-298.1
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• 2016

Two-dimensional materials have been received significant interest after the discovery of graphene due to their fascinating electronic and optical properties for the application of novel devices. However, graphene lack of certain bandgap which is essential requirement to achieve high performance field-effect transistors. Analogous to graphene materials, molybdenum disulfide ($MoS_2$) as one of transition-metal dichalcogenides family presents considerable bandgap and exhibits promising physical, chemical, optical and mechanical properties. Here we studied nonvolatile memory based on $MoS_2$ which is grown by chemical vapor deposition (CVD) method. $MoS_2$ growth was taken on $1.5{\times}1.5cm^2$ $SiO_2$/Si-substrate. The samples were analyzed by Raman spectroscopy, atomic force microscopy and X-ray photoelectron spectroscopy. Current-voltage (I-V) characteristic was carried out HP4156A. The CVD-$MoS_2$ was analyzed as few layers and 2H-$MoS_2$ structure. From I-V measurement for two metal contacts on CVD-$MoS_2$ sample, we found typical resistive switching memory effect. The device structures and the origin of nonvolatile memory effect will be discussed.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.234.1-234.1
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• 2015

Molybdenum disulfide (MoS2)는 van der Waals 결합을 통한 층상구조의 물질로써 뛰어난 물리화학적, 기계적 특성으로 Field Effect Transistors (FETs), Photoluminescence, Photo Detectors, Light Emitters 등의 많은 분야에서 연구가 보고 되어지고 있는 차세대 2D-materials이다. 이처럼 MoS2 가 다양한 범위에 응용될 수 있는 이유는 layer 수가 증가함에 따라 1.8 eV의 direct band gap 에서 1.2 eV 의 indirect band-gap으로 특성이 변화할 뿐만 아니라 다양한 고유의 전기적 특성을 지니고 있기 때문이다. 그러나 MoS2 는 원자층 단위의 layer control 이 어렵다는 이유로 다양한 전자소자 응용에 많은 제약이 보고 되어졌다. 본 연구에서는 MoS2 의 layer를 control 하기 위해 ICP system 에서 mesh grid 를 삽입하여 Cl2 radical을 효과적으로 adsorption 시킨 뒤, Ion beam system 에서 Ar+ Ion beam 을 통해 한 층씩 제거하는 방식의 atomic layer etching (ALE) 공정을 진행하였다. ALE 공정시 ion bombardment 에 의한 damage 를 최소화하기 위해 Quadruple Mass Spectrometer (QMS) 를 통한 에너지 분석으로 beam energy 를 20 eV에서 최적화 할 수 있었고, Raman Spectroscopy, X-ray Photoelectron Spectroscopy (XPS), Atomic Force Microscopy(AFM) 분석을 통해 ALE 공정에 따른 MoS2 layer control 가능 여부를 증명할 수 있었다.

• Transactions of the Korean hydrogen and new energy society
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• v.25 no.3
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• pp.289-296
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• 2014

Here, we have studied the effect of water added electrolyte on the photovoltaic performance of dye-sensitized solar cells (DSSCs). It was found that open-circuit voltage ($V_{oc}$) increased and short-circuit current density ($j_{sc}$) decreased with the increase of the amount of added water in the electrolyte of the DSSCs. Electrochemical impedance spectroscopy (EIS) study showed that the electrolyte with added water shifted the dye loaded $TiO_2$ conduction band upward that eventually increased $V_{oc}$ of the cells. On the other hand, the upward shift of $TiO_2$ conduction band decreased the driving force for the electron injection from the lowest unoccupied molecular orbital (LUMO) of the dye molecules to the conduction band of $TiO_2$ that resulted in decreased $j_{sc}$.

• Membrane and Water Treatment
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• v.11 no.2
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• pp.131-139
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• 2020

The current study focused on the preparation of low-cost PVC-based adsorbing membrane. Metakaolin, as available adsorbent, was embedded into the PVC matrix via solution blending method. The as-prepared PVC/metakaolin mixed matrix membranes were characterized using scanning electron microscopy (SEM), energy-dispersive X-ray spectroscopy (EDS), attenuated total reflectance-Fourier transform infrared (ATR-FTIR) spectroscopy, atomic force microscopy (AFM), pure water permeability and contact angle measurements. The results confirmed the improvement of PWP and hydrophilicity due to the presence of metakaolin in the PVC matrix. Additionally the structure of PVC membrane was changed due to the incorporation of metakaolin in the polymer matrix. The static adsorption capacity of all samples was determined through dye removal. The effect of metakaolin dosage (0-7%) and pH (4, 8, 12) on dye adsorption capacity was investigated. The results depicted that the highest adsorption capacity was achieved at pH of 4 for all samples. Additionally, adsorption data were fitted on Langmuir, Freundlich, and Temkin models to determine the appropriate governing isotherm model. Finally, the dynamic adsorption capacity of the optimum PVC/metakaolin membrane was studied using dead-end filtration cell. The dye removal efficiency was determined for pure PVC and PVC/metakaolin membrane. The results demonstrated that PVC/metakaolin mixed matrix membrane had a high adsorption capacity for dye removal from aqueous solution.

• Polymer(Korea)
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• v.38 no.4
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• pp.484-490
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• 2014

Reduced graphene oxide (RGO) was fabricated using gelatin as a reductant, and it could be stably dispersed in gelatin solution without aggregation. A series of RGO/gelatin composite films with various RGO contents were prepared by a solution-casting method. The structure and thermal properties of the RGO/gelatin composite films were characterized by UV-vis spectroscopy, Fourier transform infrared (FTIR) spectroscopy, X-ray diffraction (XRD), atomic force microscopy (AFM), scanning electron microscopy (SEM), differential scanning calorimeter (DSC) and thermal gravimetric analysis (TGA). The addition of RGO enhances the degree of crosslinking of gelatin films and decreases the swelling ability of the gelatin films in water, indicating that RGO/gelatin composite films have a better wet stability than gelatin films. The glass transition temperature ($T_g$) of gelatin films is also increased with the incorporation of RGO. The presence of RGO slightly increases the degradation temperature of gelatin films due to the very low content of RGO in the composite films. Since gelatin is a natural and nontoxic biomacromolecule, the RGO/gelatin composite films are expected to have potential applications in the biomedical field.

• Bulletin of the Korean Chemical Society
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• v.32 no.9
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• pp.3395-3399
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• 2011

Copper oxide thin films were synthesized by reactive radio frequency magnetron sputtering at different oxygen gas ratios. The chemical and physical properties of the thin films were investigated by X-ray photoelectron spectroscopy (XPS), scanning electron microscopy (SEM), atomic force microscopy (AFM), and X-ray diffraction (XRD). XPS results revealed that the dominant oxidation states of Cu were $Cu^0$ and $Cu^+$ at 0% oxygen ratio. When the oxygen ratios increased above 5%, Cu was oxidized as CuO as detected by X-ray induced Auger electron spectroscopy and the $Cu(OH)_2$ phase was confirmed independent of the oxygen ratio. The valence band maxima were $1.19{\pm}0.09$ eV and an increase in the density of states was confirmed after formation of CuO. The thickness and roughness of copper oxide thin films decreased with increasing oxygen ratio. The crystallinity of the copper oxide films changed from cubic Cu through cubic $Cu_2O$ to monoclinic CuO with mean crystallite sizes of 8.8 nm (Cu) and 16.9 nm (CuO) at the 10% oxygen ratio level.

• Transactions on Electrical and Electronic Materials
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• v.11 no.3
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• pp.116-119
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• 2010

The etching characteristics of zinc oxide (ZnO) were investigated, including the etch rate and the selectivity of ZnO in a $Cl_2/BCl_3$/Ar plasma. It was found that the ZnO etch rate, the RF power, and the gas pressure showed non-monotonic behaviors with an increasing Cl2 fraction in the $Cl_2/BCl_3$/Ar plasma, a gas mixture of $Cl_2$(3 sccm)/$BCl_3$(16 sccm)/Ar (4 sccm) resulted in a maximum ZnO etch rate of 53 nm/min and a maximum etch selectivity of 0.89 for ZnO/$SiO_2$. We used atomic force microscopy to determine the roughness of the surface. Based on these data, the ion-assisted chemical reaction was proposed as the main etch mechanism for the plasmas. Due to the relatively low volatility of the by-products formed during etching with $Cl_2/BCl_3$/Ar plasma, ion bombardment and physical sputtering were required to obtain the high ZnO etch rate. The chemical states of the etched surfaces were investigated using X-ray photoelectron spectroscopy (XPS). This data suggested that the ZnO etch mechanism was due to ion enhanced chemical etching.

• Bulletin of the Korean Chemical Society
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• v.35 no.7
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• pp.2049-2056
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• 2014

A simple method for exfoliating pristine graphite to yield mono-, bi-, and multi-layers of graphene sheets as a highly concentrated (5.25 mg/mL) and yielded solution in an organic solvent was developed. Pre-thermal treatment of pristine graphite at $900^{\circ}C$ in a sealed stainless steel bath under high pressures, followed by sonication in 1-methyl-2-pyrrolidinone solvent at elevated temperatures, produced a homogeneous, well-dispersed, and non-oxidized graphene solution with a low defect density. The electrical conductivities of the graphene sheets were very high, up to 848 S/cm. These graphene sheets were used to fabricate graphene-polyimide nanocomposites, which displayed a higher electrical conductivity (1.37 S/m) with an improved tensile strength (95 MPa). The synthesized graphene sheets and nanocomposites were characterized by transmission electron microscopy, scanning electron microscopy, atomic force microscopy, X-ray photoelectron spectroscopy, and Raman spectroscopy.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.04b
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• pp.137-140
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• 2004

We treated $O_2$ plasma on ITO thin film using RIE (Reactive Ion Etching) system, and analyzed the ingredient of ITO thin film according to change of processing conditions. The ingredient analysis of ITO thin film was used by EDS (Energy Dispersive Spectroscopy) and XPS (X-ray Photoelectron Spectroscopy) to compare and analyze the ingredient of bulk and surface. We measured electrical resistivity using Four-Point-Probe and calculated sheet resistance, and ITO surface roughness was measured by using AFM (Atomic Force Microscope). Finally, we fabricated OLEDs (Organic Light-Emitting Diodes) device using substrate that was treated optimum ITO surface. The result of the study for electrical and optical properties using I V L System (Flat Panel Display Analysis System), we confirmed that electrical properties (I-V) and optical properties (L-V) were improved.