• Journal of Korean Society of Steel Construction
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• v.28 no.1
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• pp.53-64
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• 2016

The double split tee connection, a type of beam-to-column moment connection, exhibits different behavioral characteristics according to changes in the thickness of the T-stub flange, the gauge distance of the high-strength bolt, and the number and diameter of high-strength bolts. In general, the double split tee connection is idealized and designed so that a T-stub fastened to the top and bottom supports a flexural moment, and a shear tab supports a shear force. However, if the double split tee connection is applied to low-and medium-rise steel structures, the size of the beam member becomes small, and thus the shear tab cannot be bolted to the web of a beam. In this regard, this study was conducted to propose connection details to ensure that the double split tee connection with a geometric shape can display sufficient shear resisting capacity. To this end, experiments were conducted using full-scale specimens for the double split tee connection.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.304.1-304.1
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• 2014

Flat-panel displays have been growing as an essential everyday product in the current information/communication ages in the unprecedented speed. The forward-coming applications require light-weightness, higher speed, higher resolution, and lower power consumption, along with the relevant cost. Such specifications demand for a new concept-based materials and applications, unlike Si-based technologies, such as amorphous Si and polycrystalline Si thin film transistors. Since the introduction of the first concept on the oxide-based thin film transistors by Hosono et al., amorphous oxide thin film transistors have been gaining academic/industrial interest, owing to the facile synthesis and reproducible processing despite of a couple of shortcomings. The current work places its main emphasis on the binary oxides composed of ZnO and SnO2. RF sputtering was applied to the fabrication of amorphous oxide thin film devices, in the form of bottom-gated structures involving highly-doped Si wafers as gate materials and thermal oxide (SiO2) as gate dielectrics. The physical/chemical features were characterized using atomic force microscopy for surface morphology, spectroscopic ellipsometry for optical parameters, X-ray diffraction for crystallinity, and X-ray photoelectron spectroscopy for identification of chemical states. The combined characterizations on Zn-Sn-O thin films are discussed in comparison with the device performance based on thin film transistors involving Zn-Sn-O thin films as channel materials, with the aim to optimizing high-performance thin film transistors.

• Science of Emotion and Sensibility
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• v.5 no.4
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• pp.67-75
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• 2002

The purpose of this study is to assess the ability of balance control in virtual moving surround stimulation using head mount display (HMD) device and force platform in patients with brain injury. Fifteen patients with stroke (mean age 54.47 yrs) and fifteen healthy normal persons participated. COP parameters were obtained total path distance, frequency of anterior-posterior and medial-lateral component by FFT analysis, weight-spectrum analysis in the two different conditions; (1) during comfortable standing with opened or closed eyes, (2) during virtual moving surround stimulation delivered using HMD with four different moving pattern. Moving patterns consisted of close-far, superior-inferior lilting (pitch) , right-left tilting (roll) and horizontal rotation (yaw) movement. In all parameters, the test-retest reliability was high. Also, the construct validity of virtual moving surround stimulation was excellent (p＜0.05). A posturographic balance assessment system equiped with virtual moving surround stimulation using HMD is considered clinically useful in evaluation of balance control in patients with brain injury.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.251-251
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• 2012

A lot of studies are undergoing on the magneto-optical (MO) properties of patterned magnetic systems for the reason that they have potential application to information technology such as ultrahigh-speed computing. Moreover, they can be considered as the future candidates for high-density MO storage devices. Not only the technical aspects, but there have been also tremendous interests in studying their properties related to the fundamental physics. The MO Kerr-rotation effects (both in reflected and the diffracted modes) and the magnetic force microscopy (MFM) are very useful techniques to investigate the micromagnetic properties of such periodic structures. Hence, in this study, we report on the MO properties of bilayered Cobalt (Co)/ nickel (Ni) micro-patterned anti-dot arrays. Such a ferromagnetic structure was made by sequentially depositing co (40 nm)/Ni (5 nm) bilayer on a Si substrate. The anti-dot patterning with hole diameter of $1{\mu}m$ was done only on the upper Co layer using photolithography technique, while the Ni underlayer was kept uniform. The longitudinal Kerr rotation (LKR) of the zeroth- and the first-order diffracted beams were measured at an incidence of $30^{\circ}$ by using a photoelastic modulator method. The external magnetic field was applied perpendicularly to the reflected and the diffracted beams using an electromagnet capable of a maximum field of ${\pm}5$ kOe. Significantly, it was observed that the LKR of the first-order diffracted beam is nearly 4 times larger than that of the zeroth-order beam. The simulated results for the hysteresis loops matched qualitatively well with the experimentally obtained ones. In conjunction with the LKR, we also investigated the magnetic-domain structure by using a MFM system, which were analyzed to elucidate the origin of the enhanced MO rotation.

• Journal of Internet Computing and Services
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• v.10 no.5
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• pp.165-181
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• 2009

This paper presents an effective representation scheme for the shape analysis of the hippocampal structure and a stereoscopic-haptic environment to enhance sense of realism. The parametric model and the 3D skeleton represent various types of hippocampal shapes and they are stored in the Octree data structure. So they can be used for the interactive shape analysis. And the 3D skeleton-based pose normalization allows us to align a position and an orientation of the 3D hippocampal models constructed from multimodal medical imaging data. We also have trained Support Vector Machine (SVM) for classifying between the normal controls and epileptic patients. Results suggest that the presented representation scheme provides various level of shape representation and the SVM can be a useful classifier in analyzing the shape differences between two groups. A stereoscopic-haptic virtual environment combining an auto-stereoscopic display with a force-feedback (or haptic) device takes an advantage of 3D applications for medicine because it improves space and depth perception.

• Laser Solutions
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• v.17 no.1
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• pp.1-6
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• 2014

Indium tin oxide (ITO) is an important transparent conducting oxide (TCO). ITO films have been widely used as transparent electrodes in optoelectronic devices such as organic light-emitting devices (OLED) because of their high electrical conductivity and high transmission in the visible wavelength. Finding ways to control ITO micromachining depth is important role in the fabrication and assembly of display field. This study presented the depth control of ITO patterns on glass substrate using a femtosecond laser and slit. In the proposed approach, a gaussian beam was transformed into a quasi-flat top beam by slit. In addition, pattern of square type shaped by slit were fabricated on the surfaces of ITO films using femtosecond laser pulse irradiation, under 1030nm, single pulse. Using femtosecond laser and slit, we selectively controlled forming depth and removed the ITO thin films with thickness 145nm on glass substrates. In particular, we studied the effect of pulse number on the ablation of ITO. Clean removal of the ITO layer was observed when the 6 pulse number at $2.8TW/cm^2$. Furthermore, the morphologies and fabricated depth were characterized using a optical microscope, atomic force microscope (AFM), and energy dispersive X-ray spectroscopy (EDS).

• Transactions on Electrical and Electronic Materials
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• v.10 no.1
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• pp.24-27
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• 2009

N-doped ZnO thin films were deposited on n-type Si(100) and homo-buffer layer, and undoped ZnO thin film was also deposited on homo-buffer layer by RF magnetron sputtering method. After deposition, all films were in-situ annealed at $800^{\circ}C$ for 5 minutes in ambient of $O_2$ with pressure of 10Torr. X -ray diffraction shows that the homo-buffer layer is beneficial to the crystalline of N-doped ZnO thin films and all films have preferable c-axis orientation. Atomic force microscopy shows that undoped ZnO thin film grown on homo-buffer layer has an evident improvement of smoothness compared with N-dope ZnO thin films. Hall-effect measurements show that all ZnO films annealed at $800^{\circ}C$ possess p-type conductivities. The undoped ZnO film has the highest carrier concentration of $1.145{\times}10^{17}cm{-3}$. The photoluminescence spectra show the emissions related to FE, DAP and many defects such as $V_{Zn}$, $Zn_O$, $O_i$ and $O_{Zn}$. The p-type defects ($O_i$, $V_{Zn}$, and $O_{Zn}$) are dominant. The undoped ZnO thin film has a better p-type conductivity compared with N-doped ZnO thin film.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.444-444
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• 2011

Recently, patterned magnetic films and elements attract a wide interest due to their technological potentials in ultrahigh-density magnetic recording and spintronic devices. Among those patterned magnetic structures, magnetic anti-dot patterning induces a strong shape anisotropy in the film, which can control the magnetic properties such as coercivity, permeability, magnetization reversal process, and magneto-resistance. While majority of the previous works have been concentrated on anti-dot arrays with a single magnetic layer, there has been little work on multilayered anti-dot arrays. In this work, we report on study of the magnetic properties of bilayered anti-dot system consisting of upper perforated Co layer of 40 nm and lower continuous Ni layer of 5 nm thick, fabricated by photolithography and wet-etching processes. The magnetic hysteresis (M-H) loops were measured with a superconducting-quantum-interference-device (SQUID) magnetometer (Quantum Design: MPMS). For comparison, investigations on continuous Co thin film and single-layer Co anti-dot arrays were also performed. The magnetic-domain configuration has been measured by using a magnetic force microscope (PSIA: XE-100) equipped with magnetic tips (Nanosensors). An external electromagnet was employed while obtaining the MFM images. The MFM images revealed well-defined periodic domain networks which arise owing to the anisotropies such as magnetic uniaxial anisotropy, configurational anisotropy, etc. The inclusion of holes in a uniform magnetic film and the insertion of a uniform thin Ni layer, drastically affected the coercivity as compared with single Co anti-dot array, without severely affecting the saturation magnetization ($M_s$). The observed changes in the magnetic properties are closely related to the patterning that hinders the domain-wall motion as well as to the magneto-anisotropic bilayer structure.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1998.06a
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• pp.399-402
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• 1998

Electroluminescent(EL) devices based on organic thin films have attracted lots of interests in large-area light-emitting display. One of the problems of such device is a lifetime, where a degradation of the cell is possibly due to an organic layers thickness, morphology and interface with electrode. In this study, light-omitting organic electroluminescent devices were fabricated using Alq$_3$(8-hydroxyquinolinate aluminum) and TPD(N,N'-diphenyl-N,N'-bis(3-methylphenyl(1-1\`-biphenyl]-4,4'-diamine). Where Alq$_3$ is an electron-transport and emissive layer, TPD is a hole-transport layer. The cell structure is ITO/TPD/Alq$_3$/Al and the cell is fabricated by vacuum evaporation method. In a measurement of current-voltage characteristics, we obtained a turn-on voltage at about 9 V. We also investigated stability of the devices using buffer layer with blend of PEI (Poly ether imide) and TPD by varying mot ratios between ITO and Alq$_3$. In current-voltage characteristics measurement, we obtained the turn-on voltage at about 6 V and observed an anomalous behavior at 3∼4 V. And we used other buffer layer of PEDT(3,4-pyrazino-3',4'-ethylenedithio-2,2',5,5'-tetrathiafulvalenium) with ITO/PEDT/TPD/Alq$_3$Al structure. We observed a surface morphology by AFM(Atomic Force Microscopy), UV/visible absorption spectrum, and PL(Photoluminescence) spectrum. We obtained the UV/visible absorption peak at 358nm in TPD and at 359nm in Alq$_3$, and the PL peaks at 410nm in TPD and at 510nm in Alq$_3$. We also studied EL spectrum in the cell structure of ITO/(TPD+PEI)/Alq$_3$/Al.

• Human Ecology Research
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• v.51 no.3
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• pp.355-370
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• 2013

The purpose of this study is to investigate the nature of work-family compatibility in the everyday experiences of dual-earner families. By comprehensively describing how dual-earner families manage daily life, this study shows their current situations. In particular, this study overcomes the limitations of previous studies using the phenomenological research methods. Previous studies partially dealt with the problems of dual-earner couples, such as the role conflict of wives and husbands. However, this study broadly demonstrates how wives and husbands as independent individuals manage their lives by working together for a living. Participants were 6 males and 6 females, who lived in Gwangju metropolitan city. Data were collected through in-depth interviews and analyzed using the method of Stevick-Colaizzi-Keen in Moustakas (1994). The results of this study display that dual-earner couples work for a living, but work is the driving force in their life. Family provides dual-earner couples with a stable life, but their stable life is possible by social support like the assistance of a mother-in-law. Dual-earner couples consider work and family as the essential axis of life, thus they give the same value on work and family. Even though dual-earner couples have a difficult time educating their children because of long working hours and coming home late, they positively combine work and family meeting the needs of self-improvement. Therefore, it is necessary to create a working environment that provides enough time for housework and childcare.