• Proceedings of the KIEE Conference
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• 1993.07b
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• pp.1262-1264
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• 1993

An amorphous $Se_{75}Ge_{25}$ thin film as inorganic resist for the focused ion beam lithography(FIBL) is investigated. This film offers an attractive potential alternative to polymer resists because of a number of advantages, such as the possibility of preparing physically uniform films of thickness as small as 200A and obtaining both positive and negative resist action in the same material, compatibility with dry processing, the sensitivity on optical, e-beam and ion beam exposure, the high-temperature stability, etc. In previous paper, the defocused ion beam-induced characteristics in a-$Se_{75}Ge_{25}$ film has been propose. Practically it is neccesary to know the relation with resist and source ions. For the purpose, the ion stopping power, the ion projected range and ion transmission coefficiency are studied. In this paper, the theoretically calculated values of parameters are presented and compared with theory.

• Proceedings of the Korean Society of Propulsion Engineers Conference
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• 2011.11a
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• pp.493-496
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• 2011

In this paper, ion beam technology was investigated mainly through the published papers. There are two different types of method application. One method is to remove the material from the substrate, the other one is deposited to the surface of the substrate or specimen. Based on the literature review there are 3-4 times more published research papers related to the deposition than those of the removal.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2008.06a
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• pp.109-110
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• 2008

• Journal of Powder Materials
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• v.19 no.1
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• pp.67-71
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• 2012

The present paper gives an overview about the Atom Probe Tomography technique and its application to powder materials. The preparation of needle-shaped Atom Probe specimens from a single powder particle using focused-ion-beam milling is described. Selected experimental data on mechanically alloyed (and sintered) powder materials are presented, giving insight into the atomic-scale elemental redistribution occurring under powder metallurgical processing.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2003.06a
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• pp.636-639
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• 2003

It is difficult to machine below 10 micrometers by conventional machining methods, such as micro-EDM. However, ultra micro machining using focused ion beam(FIB) is able to machine to 50 nanometers. In addition, 3 dimensional structures can be made by a combination of FIB and CVD to the level of 10 nanometers. Die ＆ moulds techniques are better than one-to-one machining techniques in the mass production of ultra size structures, in regards to production costs. In this case, the machining precision of die ＆ moulds affects produced parts. Also, it is advantageous to machine die ＆ moulds to the 10 micrometer level by FIB technique rather than other techniques. In this paper, the grooving characteristics for die ＆ mould materials by FIB were carried out experimentally in order to compare the machining characteristics of FIB with conventional machining methods. The results showed that the machining parameters and the scanning path of FIB affects the precision. The machined width and depth of the groove varied depending on the required depth due to the redeposition of the sputtered ion material accumulating on both the bottom and the side of the wall.

• Electrical & Electronic Materials
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• v.7 no.5
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• pp.389-396
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• 1994

The bilayer film of Ag/a-S $e_{75.G}$ $e_{25}$ and the monolayer film of a-S $e_{75.G}$ $e_{25}$ act as a negative-type and a positive-type resist in focused ion beam lithography, respectively. Using a model which takes into account the ion stopping power, the ion projected range, the ion concentration implanted into resists and the ion transmission coefficient, etc., the ion resist parameters are calculated for a broad range of ion energies and implanted doses. Ion sources of A $r^{+}$, S $i^{++}$ and G $a^{+}$ are used to expose resists. As the calculated results, the energy loss per unit distance by Ga'$^{+}$ ion is about 10$^{3}$[keV/.mu.M] and nearly constant for all energy range. Especially, the projected range and struggling for 80[keV] G $a^{+}$ ion energy are 0.0425[.mu.m] and 0.020[.mu.m], , respectively and the resist thickness of a-S $e_{75}$ G $e_{25}$ to minimize the ion penetration rate into a substrate is 0.118[.mu.m].u.m]..u.m].

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2008.11a
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• pp.609-610
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• 2008

• Proceedings of the KSME Conference
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• 2005.11a
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• pp.239.2-239.2
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• 2005

• Journal of the Korean Vacuum Society
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• v.10 no.4
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• pp.396-402
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• 2001

MgO thin films with 1000 $\AA$ thickness were deposited on Cu substrates by using an electron gun evaporator at room temperature. A 1000 $\AA$ thick Al layer was deposited on the MgO for removing the charging effect of the MgO thin film during the measurements of the sputtering yields. A Ga ion liquid metal was used as the focused ion beam(FIB) source. The ion beam was focused by using double einzel lenses, and a deflector was employed to scan the ion beams into the MgO layer. Both currents of the secondary particle and the probe ion beam were measured, and they dramatically changed with varying the applied acceleration voltage of the source. The sputtering yield of the MgO layer was determined using the values of the analyzed probe current, the secondary particle current, and the net current. When the acceleration voltage of the FIB system was 15 kV, the sputtering yield of the MgO thin film was 0.30. The sputtering yield of the MgO thin film linearly increases with the acceleration voltage. These results indicate that the FIB system is promising for the measurements of the sputtering yield of the MgO thin film.

• Applied Microscopy
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• v.40 no.4
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• pp.177-183
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• 2010

A focused ion beam (FIB) system produces a beam of positive ions (usually gallium) which are heavier than electrons and can be focused by electrostatic lenses into a spot on the specimen. With its ability milling of the specimen material by 10 to 100 nm with each pass of the beam, FIB is widely adopted in materials science, semiconductor industry, and ceramics research. Recently, FIB has been increasingly employed in the field of biomedical sciences. Here we provide a brief introduction to FIB and its applications for a wide variety of biomedical research. The surface of specimen can be in situ processed and quasi-real time visualized by two beam combination of FIB and field emission scanning electron microscope (FESEM). Due to its milling process, internal structures can be exposed and analyzed: yeast cells, fungus-inoculated wheat leaf, mannitol particles in inhalation aerosols, and oyster shell. Serial blockface tomography with the system kindles 3-dimensional reconstruction researches in the realm of nervous system and life sciences. Two-beam system of FIB/FESEM is a versatile tool to be utilized in the biomedical sciences, especially in 3-dimensional reconstruction studies.