• Title/Summary/Keyword: Focused Beam

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Super multi-view 3-D display system based on focused light Array using reflective vibrating scanner array (ViSA)

  • Ho-In Jeon;Nak-Hee Jung;Jin-San Choi;Young Jung;Young Huh
    • Broadcasting and Media Magazine
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    • v.6 no.2
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    • pp.84-101
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    • 2001
  • In this paper, we present a primitive system design of a super multi-view(SMV) 3-D display system based on a focused light array(FLA) concept using reflective vibrating scanner array(ViSA). The parallel beam scanning using a vibrating scanner array is performed by moving left and right an array of curvature-compensated mirrors or diamond-ruled reflective grating attached to a vibrating membrane. The parallel laser beam scanner array can replace the polygon mirror scanner which has been used in the SMV 3-D display system based on the focused light array(FLA) concept proposed by Kajiki at TAO(Telecommunications) Advancement Organization). The proposed system has great advantages in the sense that it requires neither huge imaging optics nor mechanical scanning pals. Some mathematical analyses and fundamental limitations of the proposed system are presented. The proposed vibrating scanner array, after some modifications and refinements, may replace polygon mirror-based scanners in the near future.

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Sputtering yield of the MgO thin film grown on the Cu substrate by using the focused ion beam (집속이온빔을 이용한 구리 기판위에 성장한 MgO 박막의 스퍼터링 수율)

  • 현정우;오현주;추동철;최은하;김태환;조광섭;강승언
    • Journal of the Korean Vacuum Society
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    • v.10 no.4
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    • pp.396-402
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    • 2001
  • MgO thin films with 1000 $\AA$ thickness were deposited on Cu substrates by using an electron gun evaporator at room temperature. A 1000 $\AA$ thick Al layer was deposited on the MgO for removing the charging effect of the MgO thin film during the measurements of the sputtering yields. A Ga ion liquid metal was used as the focused ion beam(FIB) source. The ion beam was focused by using double einzel lenses, and a deflector was employed to scan the ion beams into the MgO layer. Both currents of the secondary particle and the probe ion beam were measured, and they dramatically changed with varying the applied acceleration voltage of the source. The sputtering yield of the MgO layer was determined using the values of the analyzed probe current, the secondary particle current, and the net current. When the acceleration voltage of the FIB system was 15 kV, the sputtering yield of the MgO thin film was 0.30. The sputtering yield of the MgO thin film linearly increases with the acceleration voltage. These results indicate that the FIB system is promising for the measurements of the sputtering yield of the MgO thin film.

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Transmission Grating Formation in High Refractive-index Amorphous Thin Films Using Focused-Ion-Beam Lithography (접속이온빔 리소그라피를 이용한 고굴절 비정질 박막 투과 격자 형성)

  • Shin, Kyung;Kim, Jin-Woo;Park, Jeong-Il;Lee, Hyun-Yong;Lee, Young-Jong;Chung, Hong-Bay
    • The Transactions of the Korean Institute of Electrical Engineers C
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    • v.50 no.1
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    • pp.6-10
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    • 2001
  • In this study, we investigated the optical properties of sub-wavelength a-Si thin film transmission gratings, especially the polarization effect, the phase difference and the birefringence by using linearly polarized He-Ne laser beam (632.8nm). The a-Si transmission grating of the thickness $of < 0.1 \mum$ with four-type period($\Lambda = 0.4 \mum and 0.6 \mum$ for sub-wavelength and $\Lambda = 1.0 \mum and 1.4 \mum$ for above-wavelength) on quartz substrates have been fabricated using 50 KeV Ga+ Focused-Ion-Beam(FIB) Milling and $CF_4$Reactive-Ion-Etching(RIE) method. Finally, we obtained the trating array of a-Si thin film with a period $0.4 \mum, 0.6 \mum, 1.0 \mum, 1.4 \mum$ which have nearly equal finger spacing and width, sucessfully. Especially, for gratings with $\Lambda = 0.6 \mum(linewidth=0.25 \mum, linespace=0.35\mum), the \etamax at \theta_в=17.0^{\circ}$ is estimated to be 96%. As the results, we believe that the sub-wavelength grating arrayed a-Si thin film has the applicability as the optical device and components.

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Fabrication of carbon nanotube fibers with nanoscale tips and their field emission properties

  • Shin, Dong-Hoon;Song, Ye-Nan;Sun, Yu-Ning;Shin, Ji-Hong;Lee, Cheol-Jin
    • Proceedings of the Korean Vacuum Society Conference
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    • 2011.02a
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    • pp.468-468
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    • 2011
  • Carbon nanotubes (CNTs) have been considered as one of the promising candidate for next-generation field emitters because of their unique properties, such as high field enhancement factor, good mechanical strength, and excellent chemical stability. So far, a lot of researchers have been interested in field emission properties of CNT itself. However, it is necessary to study proper field emitter shapes, as well as the fundamental properties of CNTs, to apply CNTs to real devices. For example, specific applications, such as x-ray sources, e-beam sources, and microwave amplifiers, need to get a focused electron beam from the field emitters. If we use planar-typed CNT emitters, it will need several focal lenses to reduce a size of electron beam. On the other hand, the point-typed CNT emitters can be an effective way to get a focused electron beam using a simple technique. Here, we introduce a fabrication of CNT fibers with nanoscale point tips which can be used as a point-typed emitter. The emitter made by the CNT fibers showed very low turn-on electric field, high current density, and large enhancement factor. In addition, it showed stable emission current during long operation period. The high performance of CNT point emitter indicated the potential e-beam source candidate for the applications requiring small electron beam size.

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Ion-induced secondary electron emission coefficient and work function for MgO thin film with $O_2$ plasma treatment

  • Jung, J.C.;Jeong, H.S.;Lee, J.H.;Oh, J.S.;Park, W.B.;Lim, J.Y.;Cho, J.W.;Choi, E.H.
    • 한국정보디스플레이학회:학술대회논문집
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    • 2004.08a
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    • pp.525-528
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    • 2004
  • The ion-induced secondary electron emission coefficient ${\gamma}$ and work function for MgO thin film with $O_2$ plasma treatment has been investigated by ${\gamma}$ -FIB (focused ion beam) system. The MgO thin film deposited from sintered material with $O_2$ plasma treatment is found to have higher ${\gamma}$ and lower work function than those without $O_2$ plasma treatment. The energy of various ions used has been ranged from 100eV to 200eV throughout this experiment. It is found that the highest secondary electron emission coefficient ${\gamma}$ has been achieved for 10 minutes of $O_2$ plasma treatment under RF power of 50W.

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A Review of Ion Beam Technology (이온빔 기술 리뷰)

  • Lee, Tae-Ho
    • Proceedings of the Korean Society of Propulsion Engineers Conference
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    • 2011.11a
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    • pp.493-496
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    • 2011
  • In this paper, ion beam technology was investigated mainly through the published papers. There are two different types of method application. One method is to remove the material from the substrate, the other one is deposited to the surface of the substrate or specimen. Based on the literature review there are 3-4 times more published research papers related to the deposition than those of the removal.

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