• Title/Summary/Keyword: Fluorocarbon 박막

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Characterization of Fluorocarbon Thin Films by Contact Angle Measurements (접촉각 측정을 통한 불화 유기박막의 특성 평가)

  • 박진구;차남구;신형재;박장호
    • Journal of the Microelectronics and Packaging Society
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    • v.6 no.1
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    • pp.39-49
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    • 1999
  • Monolayer thick fluorocarbon films were characterized by the contact angle measurements. The contact angles of three different liquids, water, formamide and diiodomethane were measured on spun coated, vapor phased deposited films and Teflon surface. The highest contact angle over $130^{\circ}$was observed on fluorocarbon films deposited on Al substrates while the lowest angles below $70^{\circ}$deposited on oxide. The surface energies were calculated based on Lewis acid /base theory. The surface energies of Teflon and spin coated FC films were calculated to have 18 and 8.4 dynes /cm, respectively. Higher energies of 31 to .35 dynes /cm were calculated on vapor phase deposited films on silicon and oxide. However vapor phase deposited films on aluminum only showed a large Lewis base energy term. It might be explained by the surface roughness and heterogeneity as observed by dynamic contact angles and AFM measurements.

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Characterization of Fluorocarbon Thin Films deposited by PECVD (PECVD로 증착된 불화 유기박막의 특성 평가)

  • 김준성;김태곤;박진구;신형재
    • Journal of the Microelectronics and Packaging Society
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    • v.8 no.2
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    • pp.31-36
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    • 2001
  • Teflon-like fluorocarbon thin film was deposited by using difluoromethane$(CH_2F_2$) added with Ar, $O_2$, and $CH_4$ on Si, $SiO_2$, TEOS, and Al substrate. The deposited thin film was characterized by static contact angles for measuring hydrophobicity in various additive gas ratio. temperature, and working pressure. In case of addition with Ar, the static contact angles decreased as additive gas ratio and power increased. But the static contact angles increased as working pressure increased. Specially, super-hydrophobic surface was obtained using the powder-like fluorocarbon thin film above 2 Torr. Added with $O_2$, the static contact angles decreased as the $O_2$ ratio and working pressure increased. And the static contact angles did not change in 100W, but hydrophilic surface was obtained at 200W. In case of addition of CE$_4$, static contact angles dramatically increased in $CH_4/CH_2F_2$ ratio 5. And continuous static contact angles obtained above ratio 5. As compare with previous experiments by thermal evaporation, the fluorocarbon thin film by plasma polymerization was obtained very low hysteresis. This results shows more homogenous surface by plasma polymerization than thermal evaporation process.

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CF4/Ar 유도결합플라즈마의 저 유전상수 SiCOH 박막 식각에 미치는 RF 파워의 영향

  • Kim, Hun-Bae;O, Hyo-Jin;Lee, Chae-Min;Ha, Myeong-Hun;Park, Ji-Su;Park, Dae-Won;Jeong, Dong-Geun;Chae, Hui-Yeop
    • Proceedings of the Korean Vacuum Society Conference
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    • 2012.02a
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    • pp.402-402
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    • 2012
  • 최근 반도체 공정 중 fluorocarbon (CxHyFz) 가스와 함께 플라즈마 밀도가 큰 유도결합형 플라즈마을 사용한 식각장비가 많이 사용되고 있다. 특히 저 유전상수 값을 가지는 박막을 밀도가 큰 플라즈마와 함께 fluorocarbon 가스를 이용하여 식각을 하게 되면 매우 복잡한 현상이 생긴다. 따라서 식각률에 대한 모델을 세우고 적용하는 일이 매우 어렵다. 본 연구에서는 CF4가스를 Ar가스와 함께 혼합하고 기판 플라즈마와 유도결합형 플라즈마를 동시에 가진 식각장비를 사용하여, 저 유전상수 값을 갖는 박막을 식각하였다. 또한, 간단한 식각모델인 Langmuir adsorption model를 이용하여 식각률(Etch rate)에 대한 합리적인 이해를 얻기 위해, 기판과 유도결합형 플라즈마의 파워에 따른 식각률을 계산하고, 식각모델에서 사용되는 매개변수인 이온플럭스(Ion Flux)와 식각수율(Etch yield)을 연구하였다. 기판의 플라즈마 파워가 20에서 100 W 증가하면서 식각률이 269에서 478 nm/min로 증가하였으며, 식각수율이 0.4에서 0.59로 증가하는 것을 관찰하였다. 반면에 기판의 플라즈마 파워 증가에 따라 이온 플럭스는 3.8에서 $4.7mA/cm^2$로 변화가 크지 않았다. 또한, 유도결합형 플라즈마의 파워가 100에서 500 W 증가하면서, 식각률이 117에서 563 nm/min로 증가하였으며, 이온플럭스가 1.5에서 $6.8mA/cm^2$으로 변화하였다. 그러나, 식각수율은 0.46에서 0.48로 거의 변화하지 않았다. 그러므로 저 유전상수 값을 가지는 박막 식각의 경우, 기판의 플라즈마는 식각수율을 증가시키며 유도결합형 플라즈마는 이온 플럭스를 증가시켜 박막 식각에 기여하는 것으로 사료된다.

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Characteristics of ICP Fluorocarbon Thin Films (ICP를 이용한 불화 유기 박막의 특성 평가)

  • 차남구;박진구
    • Proceedings of the Materials Research Society of Korea Conference
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    • 2003.11a
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    • pp.72-72
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    • 2003
  • 반점착막으로 활용되고 있는 불화유기박막의 형성을 ICP를 이용하여 나노미터로 성장시키고 이를 기계적/화학적 관점에서 특성평가를 수행했다. 증착된 불차유기 박막은 알루미늄 시편위에서 110도 근처를 나타냈으며 30도 근처의 낮은 히스테리시스를 보이는 안정한 박막이 형성되었다. 극성과 비극성 용액을 사용하여 표면에너지를 검사한 결과 약 20 mN/m 이하의 낮은 표면에너지를 얻을 수 있었다. AFM을 이용한 실험결과 표면의 점착력이 약 4nN으로 매우 낮은 점착력을 가짐을 확인 할 수 있었다. FTIR 실험결과 표면에 CF$_2$ 와 같은 불화유기 그룹이 발견되었다.

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Characterization of Fluorocarbon Thin Films by Contact Angle Measurements and AFM/LFM (접촉각 측정과 AFM/LFM을 이용한 불화 유기박막의 특성 평가)

  • 김준성;차남구;이강국;박진구;신형재
    • Journal of the Microelectronics and Packaging Society
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    • v.7 no.1
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    • pp.35-40
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    • 2000
  • Teflon-like fluorocarbon thin film was deposited on various substrates by vapor deposition using PFDA (perfluorodecanoic acid). The fluorocarbon films were characterized by static/dynamic contact angle analysis, VASE (Variable-angle Spectroscopic Ellipsometry) and AFM/LFM (Atomic/Lateral Force Microscopy). Based on Lewis Acid/Base theory, the surface energy ($S_{E}$) of the films was calculated by the static contact angle measurement. The work of adhesion (WA) between de-ionized water and substrates was calculated by using the static contact data. The fluorocarbon films showed very similar values of the surface energy and work of adhesion to Teflon. All films showed larger hysteresis than that of Teflon. The roughness and relative friction force of films were measured by AFM and LFM. Even though the small reduction of surface roughness was found on film on $SiO_2$surface, the large reduction of relative friction farce was observed on all films. Especially the relative friction force on TEOS was decreased a quarter after film deposition. LFM images showed the formation of "strand-like"spheres on films that might be the reason far the large contact angle hysteresis.

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