• 한국지하수토양환경학회지:지하수토양환경
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• 제18권1호
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• pp.112-122
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• 2013

Current status of soil contamination with fluorine and its source were investigated. The basic principles and procedures of various techniques for the analysis of fluorine contents in soil and solid phase samples were summarized in this review. Analysis of fluorine in solid matrices can be achieved by two types of techniques: (i) UV/Vis spectrophotometer or ion selective electrode (ISE) analysis after performing appropriate extraction steps and (ii) direct solid analysis. As the former cases, the standard method of Korean ministry of environment, alkali fusion-ISE method, pyrohydrolysis, oxygen bomb combustion, aqua regia digestion-automatic analysis, and sequential extraction-ISE method were introduced. In addition, direct analysis methods (i.e., X-ray fluorescence spectrometry and proton induced gamma-ray emission spectrometry) and atomic spectrometry combining with the equipment for introducing solid phase sample were also reviewed. Fluorine analysis techniques can be reasonably selected through site-specific information such as matrix condition, contamination level, the amount of samples and the principles of various methods for the analysis of fluorine presented in this review.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 춘계학술대회 논문집 반도체 재료 센서 박막재료 전자세라믹스
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• pp.26-29
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• 2004

High density plasma fluorinated silicate glass (HDP FSG) is used as a gap fill film for metal-to-metal space because of many advantages. However, FSG films can cause critical problems such as bonding issue of top metal at package, metal contamination, metal peel-off, and so on. It is known that these problems are caused by fluorine penetration out of FSG film. To prevent it, FSG capping layers such like SRO (Silicon Rich Oxide) are needed. In this study, their characteristics and a capability to block fluorine penetration for various FSG capping layers are investigated. Normal stress and High stress due to denser film. While heat treatment to PETEOS caused lower blocking against fluorine penetration, it had insignificant effect on SiN. Compared with other layers, SRO using ARC chamber and SiN were shown a better performance to block fluorine penetration.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.1
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• pp.300-303
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• 2004

To fill the gap of films for metal-to-metal space High density plasma fluorinated silicate glass (HDP FSG) is used due to various advantages. However, FSG films can have critical drawbacks such as bonding issue of top metal at package, metal contamination, metal peel-off, and so on. These problems are generally caused by fluorine penetration out of FSG film. Hence, FSG capping layers such like SRO(Silicon Rich Oxide) are required to prevent flourine penetration. In this study, their characteristics and a capability to block fluorine penetration for various FSG capping layers are investigated through FTIR analysis. FTIR graphs of both SRO using ARC chamber and SiN show that clear Si-H bonds at $2175{\sim}2300cm^{-1}$. Thus, Si-H bond at $2175{\sim}2300cm^{-1}$ of FSG capping layers lays a key role to block fluorine penetration as well as dangling bond.

• Applied Science and Convergence Technology
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• 제27권1호
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• pp.9-13
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• 2018

Samples of anodic oxide film used in semiconductor and display manufacturing processes were prepared at different electrolyte temperatures to investigate the corrosion resistance. The anodic oxide film was grown on aluminum alloy 6061 by using a sulfuric acid ($H_2SO_4$) electrolyte of 1.5 M at $0^{\circ}C$, $5^{\circ}C$, $10^{\circ}C$, $15^{\circ}C$, and $20^{\circ}C$. The insulating properties of the samples were evaluated by measuring the breakdown voltage, which gradually increased from 0.43 kV ($0^{\circ}C$) to 0.52 kV ($5^{\circ}C$), 1.02 kV ($10^{\circ}C$), and 1.46 kV ($15^{\circ}C$) as the electrolyte temperature was increased from $0^{\circ}C$ to $15^{\circ}C$, but then decreased to 1.24 kV ($20^{\circ}C$). To evaluate the erosion of the film by fluorine plasma, the plasma erosion and the contamination particles were measured. The plasma erosion was evaluated by measuring the breakdown voltage after exposing the film to $CF_4/O_2/Ar$ and $NF_3/O_2/Ar$ plasmas. With exposure to $CF_4/O_2/Ar$ plasma, the breakdown voltage of the film slightly decreased at $0^{\circ}C$, by 0.41 kV; however, the breakdown voltage significantly decreased at $20^{\circ}C$, by 0.83 kV. With exposure to $NF_3/O_2/Ar$ plasma, the breakdown voltage of the film slightly decreased at $0^{\circ}C$, by 0.38 kV; however, the breakdown voltage significantly decreased at $20^{\circ}C$, by 0. 77 kV. In addition, for the entire temperature range, the breakdown voltage decreased more when sample was exposed to $NF_3/O_2/Ar$ plasma than to $CF_4/O_2/Ar$ plasma. The decrease of the breakdown voltage was lower in the anodic oxide film samples that were grown slowly at lower temperatures. The rate of breakdown voltage decrease after exposure to fluorine plasma was highest at $20^{\circ}C$, indicating that the anodic oxide film was most vulnerable to erosion by fluorine plasma at that temperature. Contamination particles generated by exposure to the $CF_4/O_2/Ar$ and $NF_3/O_2/Ar$ plasmas were measured on a real-time basis. The number of contamination particles generated after the exposure to the respective plasmas was lower at $5^{\circ}C$ and higher at $0^{\circ}C$. In particular, for the entire temperature range, about five times more contamination particles were generated with exposure to $NF_3/O_2/Ar$ plasma than for exposure to $CF_4/O_2/Ar$ plasma. Observation of the surface of the anodic oxide film showed that the pore size and density of the non-treated film sample increased with the increase of the temperature. The change of the surface after exposure to fluorine plasma was greatest at $0^{\circ}C$. The generation of contamination particles by fluorine plasma exposure for the anodic oxide film prepared in the present study was different from that of previous aluminum anodic oxide films.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2009년도 9th International Meeting on Information Display
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• pp.1504-1507
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• 2009

In this paper, the etching behavior of ZnO in $CF_4$ plasma mixed Ar was investigated. Previously, the etch rate in $CF_4$/Ar plasma was reported that it is slower than that in Cl containing plasma. But, plasma included Cl atom can produce the by-product such as $ZnCl_2$. In order to solve this film contamination, no Cl containing etching gas is required. We controlled the etching parameter such as source power, substrate bias power, and $CF_4$/Ar gas ratio to acquire the fast etch rate using a ICP etcher. We accomplished the etching rate of 144.85 nm/min with the substrate bias power of 200W. As the energetic fluorine atoms were bonded with Zinc atoms, the fluoride zinc crystal ($ZnF_2$) was observed by X-ray photoelectron spectroscopy (XPS).

• 대한화학회지
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• 제14권1호
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• pp.75-83
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• 1970

忠南 溫陽邑內의 地下水中의 弗素含量을 1969年 8月 19日부터 同年 11月 5日까지 사이에 測定하였다. 溫泉에서부터0.9km 以內의 地域內에 있는 地下水 中에는 1.0mg/l以上의 $F^{-1}$이 含有되어 있으며,1.2km 以內의 地域內에 있는 것에는 0.3mg/l 以上의 $F^{-1}$이 含有되어 있어 이들 地下水를 齒牙 生長期에 飮料水로 常用時에는 班狀齒의 原因이 되므로 住意해야 되며, 溫泉에서 1.2km∼3.9km 以內의 地域內에 있는 地下水에는 0.04∼0.29mg/l의 $F^{-1}$을 含有하고 있어서 모두 치아우식억제효과를 얻을 것이다. 溫泉 附近에서는 溫泉水에 岩石中의 $F^{-1}$이 $Ca^{+2}$과 함께 溶出되어, 이들 溫泉水가 地下水에 混入된다고 보여진다. 溫泉에서 먼 距離의 地下水에는 有機物의 分解에 基因하는 $F^{-1}$도 含有되어 있다고 보여진다.

• 한국환경농학회지
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• 제41권1호
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• pp.9-15
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• 2022

BACKGROUND: Heavy metals discharged from various sources contaminate the soil and water and the residuals can persistently be accumulated. In this study, the concentration of soil heavy metals was assessed over the whole regions of Korea based on the contamination factor and the geoaccumulation index. METHODS AND RESULTS: The data of averaged concentrations of heavy metals and fluorine were collected from the Korean Statistical Information Service (KOSIS) and the research papers published. In order to classify the levels of heavy metal concentration, the contamination index, including the contamination factor and the geoaccumulation index, based on the relative ratio of the actual concentration of heavy metals in the soil to the background concentration was calculated. In addition, the distribution of heavy metals in soils was visualized by using the geographic information system (GIS). As a result, the Cd contamination in the soils was the most concerned. CONCLUSION(S): This study very roughly indicated the outline of heavy metal concentration over the whole regions of Korea. The change in heavy metals' concentration over the time should further be monitored and the larger data of heavy metal contamination are needed for better understanding in the future.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2009년도 춘계학술발표대회
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• pp.38.1-38.1
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• 2009

Plasma etching is an essential process for electronic device industries and the particulate contamination during plasma etching has been interested as a big issue for the yield of productivity. The oxynitride glasses have a merit to prevent particulate contamination due to their amorphous structure and plasma etching resistance. The YSiAlON oxynitride glasses with increasing nitrogen content were manufactured. Each oxynitride glasses were fluorine-plasma etched and their plasma etching rate and surface roughness were compared with reference materials such as sapphire, alumina and quartz. The reinforcement mechanism of plasma etching resistance of the YSiAlON glasses studied by depth profiling at plasma etched surface using electron spectroscopy for chemical analysis. The plasma etching rate decreased with nitrogen content and there was no selective etching at the plasma etched surface of the oxynitride glasses. The concentration of silicon was very low due to the generation of SiF4 very volatile byproduct and the concentration of aluminum and yttrium was relatively constant. The elimination of silicon atoms during plasma etching was reduced with increasing nitrogen content because the content of the nitrogen was constant. And besides, the concentration of oxygen was very low on the plasma etched surface. From the study, the plasma etching resistance of the glasses may be improved by the generation of nitrogen related structural groups and those are proved by chemical composition analysis at plasma etched surface of the YSiAlON oxynitride glasses.

• 자원환경지질
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• 제57권2호
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• pp.233-241
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• 2024

본 연구는 우리나라 산림골재 주요 공급원이 될 수 있는 암석 내 불소의 지질학적 분포 특성을 조사하기 위해 22개 시군의 224개 지점에서 산림골재(암석) 시료를 채취하여 불소 농도를 조사하였다. 전국 불소 배경농도는 344 mg/kg으로 암석의 지각 평균불소 농도인 625 mg/kg 보다 현저히 낮으며, 세계 토양 평균 불소 농도인 321 mg/kg 보다는 다소 높았다. 권역별 농도분포는 경기도 394 mg/kg, 강원도 336 mg/kg, 충청도 318 mg/kg, 경상도 289 mg/kg, 전라도 271 mg/kg 순서로 조사되었다. 지체구조에 의한 농도분포는 경기육괴가 396 mg/kg 으로 가장 높았으며, 퇴적분지/화산대인 울릉도가 349 mg/kg, 옥천습곡대 291 mg/kg, 영남육괴 281 mg/kg, 경상분지 259 mg/kg 순서로 높았다. 모암의 성인에 의한 농도분포는 변성암이 362 mg/kg 으로 가장 높았으며, 퇴적암 354 mg/kg, 화성암 328 mg/kg 순서로 조사되었다. 지질시대에 의한 농도분포는 고생대가 394 mg/kg 으로 가장 높았으며, 트라이아스기 391 mg/kg, 선캠브리아시대 368 mg/kg, 쥐라기 359 mg/kg, 시대미상 324 mg/kg, 제4기 314 mg/kg, 백악기 304 mg/kg 순서로 높았다. 암종에 따른 불소 농도분포는 섬록암이 515 mg/kg 으로 가장 높았으며, 편마암류 377 mg/kg, 편암류 344 mg/kg, 천매암 306 mg/kg, 화강암류 305 mg/kg, 석영반암 298 mg/kg 순서로 조사되었다. 본 연구결과를 종합해보면 경기도 지역의 지각을 이루는 경기육괴 내 선캠브리아시대 변성암인 편마암류와 편암류가 높은 농도의 불소를 함유하고 있음을 알 수 있다.

• Transactions on Electrical and Electronic Materials
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• 제15권4호
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• pp.221-225
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• 2014

Although gold wire bonding techniques have already matured in semiconductor manufacturing, weakly bonded wires in semiconductor chip assembly can jeopardize the reliability of the final product. In this paper, weakly bonded or failed aluminum bonding pads are analyzed using X-ray photoelectron spectroscopy (XPS), Auger electron Spectroscopy (AES), and energy dispersive X-ray analysis (EDX) to investigate potential contaminants on the bond pad. We found the source of contaminants is related to the dry etching process in the previous manufacturing step, and fluorocarbon plasma etching of a passivation layer showed meaningful evidence of the formation of fluorinated by-products of $AlF_x$ on the bond pads. Surface analysis of the contaminated aluminum layer revealed the presence of fluorinated compounds $AlOF_x$, $Al(OF)_x$, $Al(OH)_x$, and $CF_x$.