• Title/Summary/Keyword: Fluorescent OLEDs

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Solution Processable P-OLED (Polymer Organic Light Emitting Diode) Display Technology.

  • Lee, Jueng-Gil;Carter, Julian
    • 한국정보디스플레이학회:학술대회논문집
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    • 2005.07b
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    • pp.1355-1360
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    • 2005
  • We report the development frontiers that are dictating the speed of adoption of polymer organic light emitting diode (P-OLED) technology in market applications. Our presentation includes both the developments taking place in materials and the rapid advances in the manufacturing processes used for solution processable P-OLEDs. On the manufacturing side, the latest progress in ink jet printing process is discussed. On the materials side, we look at both fluorescent and phosphorescent material performance including the CDT development roadmap.

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Red Fluorescent Organic Light-Emitting Diodes Using Modified Pyran-containing DCJTB Derivatives

  • Lee, Kum-Hee;Kim, Sung-Min;Kim, Jeong-Yeon;Kim, Young-Kwan;Yoon, Seung-Soo
    • Bulletin of the Korean Chemical Society
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    • v.31 no.10
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    • pp.2884-2888
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    • 2010
  • Two red fluorescent DCJTB derivatives (Red 1 and 2) based on modified pyrans were synthesized and their electroluminescent properties were investigated. Multilayered OLEDs were fabricated with the device structure of ITO/NPB (40 nm)/Red 1, 2 or DCJTB (0.5 or 1%): $Alq_3$ (20 nm)/$Alq_3$ (40 nm)/Liq (2 nm)/Al. All devices exhibited efficient red emissions. In particular, a device containing emitter Red 2 as a dopant in the emitting layer, the maximum luminance was $8737\;cd/m^2$ at 12.0 V, the luminous and power efficiencies were 2.31 cd/A and 1.25 lm/W at $20\;mA/cm^2$, respectively. The peak wavelength of the electroluminescence was 638 nm with the CIE (x,y) coordinates of (0.63, 0.36) at 7.0 V.

Effects of Doping in Organic Electroluminescent Devices Doped with a Fluorescent Dye

  • Kang, Gi-Wook;Ahn, Young-Joo;Lee, Chang-Hee
    • Journal of Information Display
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    • v.2 no.3
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    • pp.1-5
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    • 2001
  • The effect of doping on the energy transfer and charge carrier trapping processes has been studied in organic light-emitting diodes (OLEDs) doped with a fluorescent laser dye. The devices consisted of N,N'-diphenyl-N,N'-bis(3-methylphenyl)-1,1-biphenyl-4,4'-diamine (TPD) as a hole transporting layer, tris(8-hydroxyquinoline) aluminum ($Alq_3$) as the host, and a fluorescent dye, 4-dicyanomethylene-2-methyl-6-[2-(2,3,6,7-tetrahydro-1 H,5H-benzo[i,j]quinolizin-8-yl) vinyl]-4H-pyran) (DCM2) as the dopant. Temperature dependence of the current-voltage-luminescence (I-V-L) characteristics, the electroluminescence (EL) and photoluminescence (PL) spectra are studied in the temperature ranging between 15 K and 300 K. The emission from DCM2 was seen to be much stronger compared with the emission from $Alq_3$, indicative of efficient energy transfer from $Alq_3$ to DCM2. In addition, the EL emission from DCM2 increasd with increasing temperature while the emission from the host $Alq_3$ decreased. The result indicates that direct charge carrier trapping becomes efficient with increasing temperature. The EL emission from DCM2 shows a slightly sublinear dependence on the current density, implying the enhanced quenching of excitons at high current densities due to the exciton-exciton annihilation.

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Highly Efficient Blue-Light-Emitting Diodes Based on Styrylamine Derivatives End-capped with a Diphenylvinyl Group

  • Kim, Seul-Ong;Lee, Kum-Hee;Kang, Sun-Woo;Lee, Jin-Yong;Seo, Ji-Hoon;Kim, Young-Kwan;Yoon, Seung-Soo
    • Bulletin of the Korean Chemical Society
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    • v.31 no.2
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    • pp.389-396
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    • 2010
  • In this paper, we reported the synthesis and electroluminescent properties of blue fluorescent styrylamine derivatives end-capped with a diphenylvinyl group. A new series of styrylamine derivatives have been synthesized via the Horner-Wadsworth-Emmons reaction. To explore electroluminescent properties of these molecules, multilayer organic lighte-mitting devices with the configuration of ITO/NPB/1-5 doped in MADN/Bphen/Liq/Al were fabricated. All devices exhibited blue emissions with good EL performances. Among those reported herein, the device using dopant 5 exhibited a maximum luminance of $24,000\;cd/m^2$ at 11.0 V, a luminous efficiency of 12.5 cd/A at $20\;mA/cm^2$, a power efficiency of 6.50 lm/W at $20\;mA/cm^2$, and $CIE_{x,y}$ coordinates of (x = 0.173, y = 0.306) at 8.0 V, all of which demonstrate the superiority of these materials in blue OLEDs.

Red Fluorescent Donor-π-Acceptor Type Materials based on Chromene Moiety for Organic Light-Emitting Diodes

  • Yoon, Jhin-Yeong;Lee, Jeong Seob;Yoon, Seung Soo;Kim, Young Kwan
    • Bulletin of the Korean Chemical Society
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    • v.35 no.6
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    • pp.1670-1674
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    • 2014
  • Two red emitters, 2-(7-(4-(diphenylamino)styryl)-2-methyl-4H-chromen-4-ylidene)malonitrile (Red 1) and 2-(7-(julolidylvinyl)-2-methyl-4H-chromen-4-ylidene)malonitrile (Red 2) have been designed and synthesized for application as red-light emitters in organic light emitting diodes (OLEDs). In these red emitters, the julolidine and triphenyl moieties were introduced to the emitting core as electron donors, and the chrome-derived electron accepting groups such as 2-methyl-(4H-chromen-4-ylidene)malononitrile were connected to electron donating moieties by vinyl groups. To explore the electroluminescence properties of these materials, multilayered OLEDs using red materials (Red 1 and Red 2) as dopants in $Alq_3$ host were fabricated. In particular, a device using Red 1 as the dopant material showed maximum luminous efficiencies and power efficiencies of 0.82 cd/A and 0.33 lm/W at $20mA/cm^2$. Also, a device using Red 2 as a dopant material presented the CIEx,y coordinates of (0.67, 0.32) at 7.0 V.

White Organic Light-Emitting Diodes Using DCJTB-Doped 24MeSAlq as a New Hole-Blocking Layer (새로운 정공차폐 층 (Hole blocking layer)으로 DCJTB 도핑된 24MeSAlq를 이용한 백색유기발광다이오드)

  • Kim, Mi-Suk;Lim, Jong-Tae;Yeom, Geun-Young
    • Korean Journal of Materials Research
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    • v.16 no.4
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    • pp.231-234
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    • 2006
  • To obtain balanced white-emission and high efficiency of the organic light-emitting diodes (OLEDs), a deep blue emitter made of N,N'-diphenyl-N,N'-bis(1-naphthyl)- (1,1'-biphenyl)-4,4'-diamine (NPB) emitter and a new red emitter made of the Bis(2,4 -dimethyl-8-quinolinolato)(triphenylsilanolato)aluminum(III) (24MeSAlq) doped with red fluorescent 4-(dicyanomethylene)-2-tert-butyl-6-(1,1,7,7-tetramethyljulolidyl-9-enyl)-4H -pyran (DCJTB) were used and the device was tuned by varying the thickness of the DCJTB-doped 24MeSAlq and $Alq_3$. For the white OLED with 10 nm thickness DCJTB (0.5%) doped 24MeSAlq and 45 nm thick $Alq_3$, the maximum luminance of about 29,700 $Cd/m^2$ could be obtained at 14.8 V. Also, Commission Internationale d'Eclairage (CIE) chromaticity coordinates of (0.32, 0.28) at about 100 $Cd/m^2$, which is very close to white light equi-energy point (0.33, 0.33), could be obtained.

Highly efficient, long living white PIN-OLEDs for AM displays

  • Murano, Sven;Vehse, Martin;He, Gufeng;Birnstock, Jan;Hofmann, Michael
    • 한국정보디스플레이학회:학술대회논문집
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    • 2007.08a
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    • pp.239-244
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    • 2007
  • Highly efficient and stable white PIN OLED structures have been developed with a focus on possible AM display applications. Due to the use of the novel air-stable Novaled n-dopant material NDN26, the mass production compatibility of the PIN approach is improved. With both a conventional n-dopant, NDN1, and a novel air-stable n-dopant, NDN26, similar performance in efficiency and lifetime are reached. Based on highly a stable red fluorescent emitter system, the Novaled PIN approach allows for reaching ultra-long lifetimes of 1,000,000 hours at a brightness of $1,000\;cd/m^2$, both for top and for bottom emission layouts. Furthermore, inverted PIN structures for a possible use in a-Si backplane applications for AM displays are shown. With a phosphorescent green emitter system it could be demonstrated that for bottom and inverted as well as non-inverted top emission, a brightness of $1,000\;cd/m^2$ can be reached at below 3 V. In addition to low operating voltages and long lifetimes, PIN OLEDs also enable for device structures with extremely low operating voltage drifts, a feature of increasing importance for future AM display developments.

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Characteristics of OLED Lifetime by ITO/glass Substrate Pre-treatment and Cathode Deposition Methods (ITO/glass 기판 전처리와 음극 전극 증착방법에 따른 OLED 수명 특성)

  • Shin, Se-Jin;Jang, Ji-Geun;Kim, Min-Young
    • Journal of the Semiconductor & Display Technology
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    • v.7 no.2
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    • pp.59-62
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    • 2008
  • The Lifetime of OLEDs by ITO/glass substrates cleaning method and cathode deposition method were investigated in the fabrication of green light emitting OLEDs with $Alq_3$-C545T fluorescent system. In our experiments, the optimum cleaning method was obtained at last processing of boiling IPA(isopropyl alcohol). And the optimum deposition methode was obtained at 3 steps deposition rate of Al. The deposition rate of 3 steps progressed changing from $0.5\AA$/sec to $3\AA$/ sec. The green light emitting OLED with plasma treatment at 150W for 2 minutes showed the highest luminance and efficiency of 20000 cd/$m^2$ and 16 lm/W. On the contrary, the OLED device without plasma treatment showed much lower performance with the luminance and efficiency of 3500 cd/$m^2$ and 2 lm/W.

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Characteristics on the Variation of Hole transporting layer of Blue organic light-emitting diodes (정공수송층의 변화에 따른 청색 유기 발광 소자의 특성)

  • Kim, Gu-Young;Park, Jung-Hyun;Seo, Ji-Hoon;Lee, Kum-Hee;Yoon, Seung-Soo;Kim, Young-Kwan
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2007.11a
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    • pp.434-435
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    • 2007
  • We have demonstrated the characteristics on the variation of hole transporting layer in blue organic light-emitting diodes (OLEDs) using new blue fluorescent emitter. We fabricated two types of hole transporting layer structures that one is 4,4',4"-Tris(N-(2-naphthyl)-N-phenyl-amino)-triphenylamine (2-TNATA) of $600{\AA}$ as a hole injection layer, N,N'-diphenyl-N,N'- (2-napthyl)-(1,1'-phenyl)-4,4'-diamine (NPB) of $200{\AA}$ as a hole transporting layer and another device is NPB of $500{\AA}$ without the 2-TNATA. The devices without the 2-TNATA showed improved characteristic of the luminance and efficiency.

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Emission Characteristics of Blue Fluorescent OLED with Anode Materials (양극 물질에 따른 청색 형광 OLED의 발광 특성)

  • Kong, Do-Hoon;Lee, Yo-Seb;Ju, Sung-Hoo;Yang, Jae-Woong
    • Journal of the Korean institute of surface engineering
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    • v.48 no.3
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    • pp.121-125
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    • 2015
  • We studied the blue fluorescent OLED with Mg:Ag, Al, Ni as anode materials. Blue fluorescent OLEDs were fabricated using Anode / $MoO_3$ (3 nm) / 2-TNATA (60 nm) / NPB (30 nm) / SH-1 : BD-2 (5 vol.%, 30 nm) / Bphen (40 nm) / Liq (1 nm) / Al (150 nm). Current density of OLED with Mg:Ag was not measured due to too low work function, and that of OLED with Al showed $45.2mA/cm^2$ at 12 V. Luminance and Current efficiency of OLED with Al showed $385.1cd/m^2$ and 0.9 cd/A. Current density of OLED with Ni of 8, 10, 12 nm thickness showed 10, 12.9, $37.2mA/cm^2$, respectively. Luminance and Current efficiency of OLED with Ni of 8, 10, 12 nm thickness showed 670.9, 991.2, $1,320cd/m^2$ and 6.7, 7.7, 3.6 cd/A, respectively. Transmittance of Al was 52.2% at 476 nm wavelength and that of Ni of 8, 10, 12 nm thickness was 79, 77, 74 %, respectively. In spite of best current density, OLED with Al showed the lowest luminance and current efficiency because of low work function and poor transmittance. When thickness of Ni was increased to 12nm, current efficiency was sharply lower owing to bad transmittance and unbalance of holes and electrons. Finally, OLED with Ni of 10 nm thicknes showed the highest current efficiency.