• 국제물리치료학회지
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• 제11권1호
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• pp.1954-1959
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• 2020

Background: Due to aging, blood flow rate decreases, also posture and chewing habit may be changed. Objective: To identify that changes in blood velocity in the common carotid arteries (CCAs) in old persons with unilateral chewing habit (UCH) and forward head posture (FHP) in the elderly. Design: An observational cross-sectional study. Methods: Chewing habits, FHP, and CCAs velocities were assessed in 85 elderly subjects. Chewing habits were measured by visual observation. CCAs measured the peak systolic velocity (PSV), end-diastolic velocity (EDV), minimum diastolic velocity, and resistivity index. The subjects were divided into UCH and bilateral chewing habit groups depending on chewing habit. The subjects were also divided into >49 degrees and <49 degrees for comparison of blood flow between the left and right CCAs. Results: In the UCH, the chewing side had significantly higher EDV (P=.003), PSV (P=.023) than the non-chewing side. There was no significant difference in velocity between the CCAs in the FHP. Conclusion: This study shows that the blood flow velocity of the chewing side of UCH was higher, and unilateral chewing affects the CCAs velocity and thus highlight the importance of chewing habit in the elderly than head posture.

• 대한전자공학회논문지SD
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• 제47권2호
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• pp.15-20
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• 2010

본 연구에서는 RF magnetron sputtering법으로 기판온도 $200^{\circ}C$에서 공정 압력 (5~20 mTorr)과 산소 가스비 (0~3%)를 변화시켜가며 PES 플라스틱 기판 위에 AZO (Al:3wt%) 박막을 제작하여 광학적 및 전기적 특성을 조사하였다. XRD 측정을 통해 공정 조건에 관계없이 모든 AZO박막이 c 축으로 우선 성장함을 확인할 수 있었다. 박막의 표면을 AFM 으로 조사한 결과, 표면 거칠기 값은 공정압력 5 mTorr, 산소 가스비 3%에서 제작한 박막에서 가장 낮은 값 (3.49 nm) 을 나타내었다. 모든 AZO 박막이 가시광 영역에서 80% 정도의 투과율을 보였으며, 공정 압력과 산소 가스비가 감소할수록 에너지 밴드갭이 증가하는 Burstein-Moss 효과를 관찰할 수 있었다. Hall 측정 결과, 공정 압력 5 mTorr와 산소 가스비 0%에서 제작한 AZO 박막에서 가장 높은 캐리어 농도 $2.63\;{\times}\;10^{20}\;cm^{-3}$ 값과 가장 낮은 비저항 $4.35\;{\times}\;10^{-3}\;{\Omega}cm$ 값을 나타내었다.

• 한국전기전자재료학회논문지
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• 제24권4호
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• pp.303-308
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• 2011

The Gallium-doped ZnO(GZO) film deposited at a temperature of $200^{\circ}C$ and a pressure of 10 mtorr has an optical transmittance of 89.0% and a resistivity of $2.0\;m{\Omega}{\cdot}cm$ because of its high crystallinity. Effect of $Al_2O_3$ oxide buffer layers on the optical and electrical properties of sputtered ZnO films were intensively investigated for developing the electrodes of opto-electronic devices which demanded high optical transmittance and low resistivity. The use of $Al_2O_3$ buffer layer could increase optical transmittance of GZO film to 90.7% at a wavelength of 550 nm by controlling optical spectrum. Resistivity of deposited GZO films were much dependent on the deposition condition of $O_2/(Ar+O_2)$ flow rate ratio during the buffer layer deposition. It is considered that the $Al_2O_3$ buffer layer could increase the carrier concentration of the GZO films by doping effect of diffused Al atoms through the rough interface.

• 대한전기학회논문지
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• 제41권9호
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• pp.1013-1020
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• 1992

The conductivity variation of a high resistivity bulk silicon semiconductor, whose electrodes were deposited with aluminum vapor, was studied experimentally by measuring the X-ray intensity and current flow, which was developed by X-ray radiation while applying a pulse voltage to the silicon, in a load resistor connected to the semiconductor. The current flow observed immediately as the X-ray radiated, and when the X-ray decreased. It was found from the observation of switching current for the X-ray intensity and the voltage applied in the semiconductor that the switching current of the semiconductor increased as the intensity of the X-ray and the applied voltage increased. In case of lower applied voltage, the switching current for higher applied voltage depended on the intensity of the X-ray radiated due to the saturation of electron and hole.

• 소음진동
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• 제6권3호
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• pp.333-339
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• 1996

The absorption coefficients of 3 largely reticulated urethan foams are measured by transfer function method which uses two microphones in an impedance tube. Based on the previously published data, the new modified empirical equations for predicting the characteristic impedance and propagation constant of the largely reticulated urethane foams are developed. Comparison is made between the measured data and the predicted data, based on the previously published equations and the new equation. Good agreement of the absorption coefficient between the measured and predicted data by the new modified empirical equation has been obtained.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1996년도 하계학술대회 논문집 C
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• pp.1673-1675
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• 1996

We have studied the effect of surface tension and flow rate of contaminants, wettability, frequency of applied voltage dependence of tracking breakdown. As the flow rate of contaminant is increasd, the surface resistivity is decreased, and the leakage current is increased, the time to tracking breakdown is decreased. It is found that time to tracking breakdown depends on the frequency of contaminant, that is difference of wettability. And as the frequency of applied voltage is increased, time to tracking breakdown decreased.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2005년도 추계학술대회 논문집 Vol.18
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• pp.72-73
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• 2005

Stress behavior was studied to investigate the internal behaviors of boron, carbon, and nitrogen in the 1000${\AA}$-thick tungsten boron carbon nitride (W-B-C-N) thin films. The impurities in the W-B-C-N thin films provide stuffing effects that were very effective for preventing the interdiffusion between interconnection metal and silicon substrate during the subsequent high temperature annealing process. The resistivity of W-B-C-N thin film decreases as an annealing temperature increase. The W-B-C-N thin films have compressive stress, and the stress value decreased up to $4.11\times10^{10}dyne/cm^2$ as an $N_2$ flow rate increases up to 3 sccm.

• 대한안전경영과학회:학술대회논문집
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• 대한안전경영과학회 2002년도 추계학술대회
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• pp.279-284
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• 2002

All-vanadium redox flow battery(VRFB) has been studied actively as one of the most promising electrochemical energy storage systems for a wide range of applications such as electric vehicles, photovoltaic arrays, and excess power generated by electric power plants at night time. CPCS has been shown to have the characteristics as an excellent current collector for VRFB and electrochemical properties of specific resistivity 0.31 $\Omega$cm, which were composed of G-1028 80 wt%, PVC 10 wt%, DBP 5 wt% and FS 5 wt%. Energy efficiencies of VRFB with the CPCE and the existing electrode assembly were 84.14 % and 77.24 % respectively, in charge/discharge experiments at constant current of 200 mA, and the CPCE was confirmed to be suitable as the electrode of VRFB.

• 한국반도체및디스플레이장비학회:학술대회논문집
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• 한국반도체및디스플레이장비학회 2003년도 추계학술대회 발표 논문집
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• pp.1-6
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• 2003

Flow modulation chemical vapor deposition process has been reported as an alternative way to obtain low resistivity, low residual chlorine content and good step-coverage titanium nitride film. Flow and concentration characteristics in a vertical FMCVD reactor are analyzed by using computational fluid dynamics method. The results show that 1.0 second as Cl reduction period is too short and there is still $TiCl_4$ gas above the holder at the end of the period. Time variation of $TiCl_4$ gas concentration on the holder shows that at least 3.0 second is necessary as Cl reduction time for the sake of film characteristics.

• 한국표면공학회지
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• 제40권3호
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• pp.117-124
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• 2007

The ITO films were deposited on glass substrates by RF-superimposed dc reactive magnetron sputtering and were annealed in $N_2$ vacuum furnace with temperatures in the range of $403K{\sim}573K$ for 30 minutes. Electrical, optical and structural properties of ITO films were examined with varying annealing temperatures from 403 K to 573 K. The resistivity of as-deposited ITO films was $5.4{\times}10^{-4}{\Omega}cm$ at the sputter conditions of applied RF/DC power of 200/200 W, $O_{2}$ flow of 0.2 seem and Ar flow of 0.2 seem. As a result of annealing in the temperature range of $403K{\sim}573K$, the crystallization occurred at 423 K that is lower than the crystallization temperature caused by a conventional sputtering method. And the resistivity decreased from $5.4{\times}10^{-4}{\Omega}cm\;to\;2.3{\times}10^{-4}{\Omega}cm$, the carrier concentration and mobility of ITO films increased from $4.9{\times}10^{20}/cm^3\;to\;6.4{\times}10^{20}/cm^3$, from $20.4cm^2/Vsec\;to\;41.0cm^2/Vsec$, respectively. The transmittance of ITO films in visible became higher than 90% when annealed in the temperature range of $423K{\sim}573K$. High quality ITO thin films made by RF-superimposed dc reactive magnetron sputtering and annealing in $N_2$ vacuum furnace will be applied to transparent conductive oxides of the advanced flat panel display.