• Journal of KSNVE
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• v.7 no.3
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• pp.401-409
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• 1997

This study observed the meterological influence on the excess attenuation with various flow resistivities. The flow resistivity is simulated up to 30, 000 cgs rayls. There is no significant differences among results from spherical wave analysis for excess attenuation, from plane wave analysis, and from locally reacting analysis. This is validated only when the flow resistivity is more than 100 cgs rayls. For the determination of effective flow resistivity of ground by measuring the excess attenuation experimentally, it is highly recommended that the distance between source and receiver is about 2.5m, and that the height of them is 0.3-0.4 m in case that they have the same height. Under this proposed conditions, the flow resistivity of 6-month-passed asphalt ground is estimated to 5, 000 cgs rayls by comparing the measured excess attenuation with the calculated.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.283-283
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• 2007

Titanium nitride thin films were deposited on $SiO_2$/Si substrate by rf-reactive magnetron sputtering. The structural and electrical properties of the films were investigated with various $N_2/(Ar+N_2)$ flow ratios (nitrogen/argon flow ratio). The resistivity as well as temperature coefficient of resistance (TCR) of the films strongly depends on phase structure. For the films deposited at nitrogen/argon flow ratio of below 5%, the resistivity increased with increasing nitrogen/argon flow ratios. However, the resistivity of the film deposited at nitrogen/argon flow ratio of 7% decreased drastically; it is even smaller than that of metal titanium nitride. A near-zero TCR value of approximately 9 ppm/K was observed for films deposited at nitrogen/argon flow ratio of 3%.

• Electrical & Electronic Materials
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• v.8 no.2
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• pp.196-203
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• 1995

We presented Tungsten and Tungsten Nitride thin films deposited by RF and DC sputtering. It deposited at various conditions that determining the resistivity and sheet resistivity by stabilizing the basic theory. We investigated properties of the resistivity and sheet resistivity of these films under various conditions, temperature of substrate, flow rate of the argon gas and content of nitrogen from nitrogen-argon mixtures. As the temperature of substrate increased and the flow rate of the argon gas decreased, the resistivities of these films reduced by structural transformation. We found that these resistivities were depend on the temperature of substrate, flow rate and electric power. Very highly resistive tungsten films obtained at 10W RF power. On the contrary, we found that films deposited by DC sputtering, from which very lowly resistive tungsten films were obtained. Tungsten nitride thin films deposited by reactive DC sputtering and the resistivities of these films increased as the content of nitrogen gas increased from nitrogen-argon mixture. And also we found the results show very good agreement, compared with experimental data.

• Proceedings of the KIEE Conference
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• 1997.11a
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• pp.267-269
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• 1997

The electrical properties due to the Benzotriazole(following as BTA) additive in fluids for insulating and cooling the ultra-high voltage transformer is studied in this paper. Specimen having the several contents of BTA, such as 5[ppm]. 10[ppm] and 30[ppm] is used in order to investigate the characteristics on volume resistivity in case of fluid flow in experimental device made in lab. Volume resistivity is decreased with an increase of fluid flow velocity and increased with BTA content in low temperature region, but volume resistivity of specimen contained BTA 10[ppm] is the largest thing over $30[^{\circ}C]{\sim}50[^{\circ}C]$ than the others in experiment.

• Carbon letters
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• v.16 no.2
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• pp.86-92
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• 2015

Multi-walled carbon nanotube (MWCNT)/polycarbonate (PC) nanocomposite was prepared by direct melt mixing to investigate the effect of the shear rate on the surface resistivity of the nanocomposites. In this study, an experiment was carried out to observe the shear induced orientation of the MWCNT in the polymer matrix using a very simple melt flow indexer with various loads. The compression-molded, should be eliminated. MWCNT/PC nanocomposite sample exhibited lower percolation thresholds (at 0.8 vol%) and higher electrical conductivity values than those of samples extruded by capillary and injection molding. Shear induced orientation of MWCNT was observed via scanning electron microscopy, in the direction of flow in a PC matrix during the extrusion process. The surface resistivity rose with increasing shear rate, because of the breakdown of the network junctions between MWCNTs. For real applications such as injection molding and the extrusion process, the amount of the MWCNT in the composite should be carefully selected to adjust the electrical conductivity.

• Proceedings of the Korean Society for Noise and Vibration Engineering Conference
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• 2002.05a
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• pp.1244-1249
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• 2002

In this study, the physical characteristics of steel-wire sound absorbing materials with different thickness and bulk density is experimentally obtained in terms of the porosity and specific flow resistivity. Based on the experimental results, the following conclusions can be made. The porosities of steel-wire sound absorbing materials are smaller than those of general absorbing materials, which are inversely proportional to the volume densities. For the porosity measurement with a good accuracy, the dynamic correction based on the system compliance should be involved in porosity measurement. In addition, the flow condition for the precise measurement of the specific flow resistivity of steel-wire sound absorbing materials should be limited in the laminar flow region.

• Transactions of the Korean Society of Automotive Engineers
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• v.23 no.6
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• pp.656-662
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• 2015

In the present study, multi-layered Si DLC (Silicon Diamond-Like Carbon) coatings with HMDSO (Hexamethyldisiloxane) buffer layers are applied on SKD 11 substrates by PECVD (Plasma Enhanced Chemical Vapor Deposition) with different HMDSO gas flow rates, while the gas flow rate of $C_2H_2$ is fixed to enhance the electric resistivity of forming dies for electrically assisted forming. The HMDSO buffer layer is introduced to increase adhesion between the base metal and Si-DLC layers. The result of evaluation of electric resistivity and adhesion strength shows that the properties are affected by the flow rate of HMDSO, while the flow rate of 80 sccm results in the coating with the highest electric resistivity and adhesion strength among the selected flow rates.

• Proceedings of the Korean Society for Noise and Vibration Engineering Conference
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• 1997.10a
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• pp.237-243
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• 1997

Most outdoor sounds go from sources relatively near the ground to receivers near the ground. When either source or receiver are near the ground, interference can occur between the direct sound and that reflected at the ground which travels a slightly longer path. The sound pressure at the receiver is very different depending on the state of ground surface i.e. ground impedance. Ground impedances could be characterized by the value of a single parameter, namely the flow resistivity of the ground surface. This study suggests the measurement method of the flow resistivity using two microphones and predicts the flow resistivities of various ground surfaces.

• Transactions on Electrical and Electronic Materials
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• v.8 no.4
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• pp.161-165
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• 2007

In this work, Ni thin films with different thickness from $1,523{\AA}\;to\;9,827{\AA}$ were deposited for the application of micro thermal flow sensors by a magnetron sputtering and oxidized through annealing at $450^{\circ}C$ with increasing annealing time. The initial variation of resistivity decreased radically with increasing films thickness, then gradually stabilizes as the thickness increases. The resistivity of Ni thin films with $3,075{\AA}$ increased suddenly with increasing annealing time at $450{\circ}C$, then gradually stabilizes as the thickness increases after the annealing time 9 h. In case of $3,075{\AA}\;and\;9,827{\AA}$ films, the average of TCR values, measured for the operating temperature range of $0^{\circ}C\;to\;180^{\circ}C$, were $2,413.1ppm/^{\circ}C\;and\;4,438.5ppm/^{\circ}C$, respectively. Because of their high resistivity and very linear TCR, Ni oxide thin films are superior to pure Ni and Pt thin films for flow and temperature sensor applications.

• Journal of the Semiconductor & Display Technology
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• v.12 no.4
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• pp.49-54
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• 2013

In this study, we have investigated the effect of the substrate temperature and oxygen flow rate on the characteristics of IZO thin films for the OLED (organic light emitting diodes) devices. For this purpose, IZO thin films were deposited by RF magnetron sputtering at room temperature and $300^{\circ}C$ with various $O_2$ flow rate. In order to investigate the influences of the oxygen, the flow rate of oxygen in argon mixing gas has been changed from 0.1sccm to 0.5sccm. IZO thin films deposited at room temperature show amorphous structure, whereas IZO thin films deposited at $300^{\circ}C$ show crystalline structure having an (222) preferential orientation regardless of $O_2$ flow rate. The electrical resistivity of IZO film increased with increasing flow rate of $O_2$ under Ar+$O_2$. The change of electrical resistivity with increasing flow rate of $O_2$ was mainly interpreted in terms of the charge carrier concentration rather than the charge carrier mobility. The electrical resistivity of the amorphous-IZO films deposited at R.T. was lower than that of the crystalline-IZO thin films deposited at $300^{\circ}C$. The change of electrical resistivity with increasing substrate temperature was mainly interpreted in terms of the charge carrier mobility rather than the charge carrier concentration. All the films showed the average transmittance over 85% in the visible range. The current density and the luminance of OLED devices with IZO thin films deposited at room temperature in 0.1sccm $O_2$ ambient gas are the highest amongst all other films. The optical band gap energy of IZO thin films plays a major role in OLED device performance, especially the current density and luminance.