• Journal of Soil and Groundwater Environment
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• v.18 no.3
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• pp.109-118
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• 2013

Characteristics of the transport of zero-valent iron nanoparticles (nZVI) in an aquifer were investigated to evaluate an application of nZVI-based reactive zone technology. Main flow direction of groundwater was north. Preferential flow paths of the groundwater identified by natural gradient tracer test were shown northeast and northwest. The highest groundwater velocity was $4.86{\times}10^{-5}$ m/s toward northwest. When the breakthrough curves obtained from the gravity injection of nZVI were compared with the tracer curves, the transport of nZVI was retarded and retardation factors were 1.17 and 1.34 at monitoring wells located on the northeast and northwest, respectively. The ratios of the amount of nZVI delivered to the amount of tracer delivered at the two wells mentioned above were 24 and 28 times greater than that of the well on the main flow direction, respectively. Attachment efficiency based on a filtration theory was $4.08{\times}10^{-2}$ along the northwest direction that was the main migration route of nZVI. Our results, compared to attachment efficiencies obtained in other studies, demonstrate that the mobility of nZVI was higher than that of results reported in previous studies, regardless of large iron particle sizes of the current study. Based on distribution of nZVI estimated by the attachment efficiency, it was found that nZVI present within 1.05 m from injection well could remove 99% of TCE within 6 months.

• Journal of Digital Contents Society
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• v.19 no.8
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• pp.1545-1554
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• 2018

In order to support the mobility of the wireless devices, at least two APs (Access Points) must be arranged in a single AP area to maintain communication area. In the WLAN (Wireless LAN) environment, seamless handover is one of the most important issues in terms of effective utilization of wireless networks and maximization of services for users. On the other hand, SDN (Software-Defined Networking), which is emerging rapidly in recent years, is revolutionizing network management in terms of flexibility, fine control, and convenience. SDN originally reduces latency time or increases network robustness by real-time flow table control reducing or bypassing paths between switches in LAN-based data centers. In this study, we apply OpenFlow, a SDN platform focused on wired LAN, to a dense WLAN environment using legacy APs to implement and evaluate seamless handover for streaming services of digital contents.

• Clean Technology
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• v.17 no.4
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• pp.363-369
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• 2011

To evaluate the feasibility of electrodialysis for ammonia nitrogen removal from wastewater, the effects of operating parameters such as diluate concentration, applied voltage and flow rate on the removal of ammonia nitrogen were experimentally estimated. The removal rate was evaluated by measuring the elapsed time for ammonia nitrogen concentration of diluate to reach 20 mg/L. Limiting current density (LCD) linearly increased with ammonia nitrogen concentration and flow rate. The elapsed time was linearly proportional to initial concentration of diluate. Due to relatively large equivalent ion conductivity and ion mobility of ammonia nitrogen, the removal rate increased consistently with flow rate. Increase in the applied voltage gave positive effect to removal rate. From the operation of the electrodialysis module used in this research, the flow rate of 3.2 L/min and 80~90% of applied voltage for LCD are recommended as the optimum operating condition for the removal from high concentrate ammonia nitrogen solution.

• Transactions on Electrical and Electronic Materials
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• v.10 no.6
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• pp.203-207
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• 2009

We have investigated the effect of ambient gases on the structural, electrical, and optical characteristics of ITO thin films intended for use as anode contacts in OLED (organic light emitting diodes) devices. These ITO thin films are deposited by radio frequency (RF) magnetron sputtering under different ambient gases (Ar, Ar+$O_2$, and Ar+$H_2$) at $300{^{\circ}C}$. In order to investigate the influences of the oxygen and hydrogen, the flow rate of oxygen and hydrogen in argon mixing gas has been changed from 0.5 sccm to 5 sccm and from 0.01 sccm to 0.25 sccm, respectively. The intensity of the (400) peak in the ITO thin films increased with increasing $O_2$, flow rate whilst the (400) peak was nearly invisible in an atmosphere of Ar+$H_2$. The electrical resistivity of the ITO thin films increased with increasing $O_2$ flow rate, whereas the electrical resistivity decreased sharply under an Ar+$H_2$ atmosphere and was nearly similar regardless of the $H_2$ flow rate. The change of electrical resistivity with changes in the ambient gas composition was mainly interpreted in terms of the charge carrier mobility rather than the charge carrier concentration. All the films showed an average transmittance of over 80% in the visible range. The OLED device was fabricated with different ITO substrates made with the configuration of ITO/$\alpha$-NPD/DPVB/$Alq_3$/LiF/Al in order to elucidate the performance of the ITO substrate. Current density and luminance of OLED devices with ITO thin films deposited in Ar+$H_2$ ambient gas is the highest among all the ITO thin films.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.35 no.5B
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• pp.741-752
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• 2010

The ability to seamlessly switch between the macro networks and femtocell networks is a key driver for femtocell network deployment. The handover procedures for the integrated femtocell/macrocell networks differ from the existing handovers. Some modifications of existing network and protocol architecture for the integration of femtocell networks with the existing macrocell networks are also essential. These modifications change the signal flow for handover procedures due to different 2-tier cell (macrocell and femtocell) environment. The handover between two networks should be performed with minimum signaling. A frequent and unnecessary handover is another problem for hierarchical femtocell/macrocell network environment that must be minimized. This work studies the details mobility management schemes for small and medium scale femtocell network deployment. To do that, firstly we present two different network architectures for small scale and medium scale WCDMA femtocell deployment. The details handover call flow for these two network architectures and CAC scheme to minimize the unnecessary handovers are proposed for the integrated femtocell/macrocell networks. The numerical analysis for the proposed M/M/N/N queuing scheme and the simulation results of the proposed CAC scheme demonstrate the handover call control performances for femtocell environment.

• Journal of the Korean Ceramic Society
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• v.33 no.5
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• pp.514-518
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• 1996

Sb doped SnO2(ATO: Antinomy doped Tin Oxide) thin films were prepared by a DC magnetron spttuering method using an oxide target and the electrical characteristics of ATO films were investigated. The experimen-tal conditions are as follows :Ar flow rate ; 0~100 sccm deposition tempera-ture ; 250~40$0^{\circ}C$ DC sputter powder ; 150~550W and sputteing pressure ; 2~7 mTorr, The thickness of depositied ATO films were 600$\AA$~1100 $\AA$ ranges. The resistivity of ATO films was decreased due to the increase of the crystallinity of ATO films with deposition temperature. The decrease of carrier concentration of films with the increase of oxygen flow rate and working pressure is responsible for the increase of resistivity. Increasing of sputtering power raised the resistivity of films by decreasing the carrier mobility.

• The KIPS Transactions:PartC
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• v.11C no.1
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• pp.115-122
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• 2004

Diff-Serv is a mechanism by which network service providers can offer differing levels of network service to different traffic, in so providing quality of service (QoS) to their customers. Because this mechanism has been deployed just for fixed hosts with the Token Bucket mechanism, DiffServ have been suggested can not satisfy the mobility service or the differential serrlce for Individual traffics. In this paper, we suggest WFQ mechanism for traffic conditioner and scheduling method for monitoring the AggF(Aggregate Flow) which will be controlled in edge nodes and border routers. So it will control traffic rate dynamically and suggest efficient usability of bandwidth.

• Journal of the Korean Vacuum Society
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• v.8 no.2
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• pp.141-147
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• 1999

The electrochromic characteristics of tungsten oxide films are largely affected by deposition conditions, such as substrate temperature and gas flow rate and also post-annealing. We have considered gas flow rate and temperature as important factors having an effect on an electrical, optical phenomenon and structural variation of $WO_3$ . The tungsten oxide films were deposited onto ITO(20$\Omega\box$, 1000$\AA$) using rf magnetron sputtering method. In particular, the films deposited at room temperature were annealed at various temperatures in air. All specimens had crystal structure except one being deposited at room temperature with nearly amorphous-like structure. The specimen deposited at $100^{\circ}C$ had a structure in which the increase in deposition temperature. The specimen deposited at $100^{\circ}C$ had a structure in which the cations$(Li^+)$ are easily movable because of void boundaries induced by regularly arrayed large grains. The specimen deposited at $300^{\circ}C$ had a dense structure with small grains but it exhibited the large mobility and charge density in $WO_3$ because of distinct grain boundaries.

• Proceedings of the Korean Society Of Semiconductor Equipment Technology
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• 2002.11a
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• pp.81-84
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• 2002

The effects of the isoelectronic AI-doping of GaN grown by metal organic chemical vapor deposition were investigated for the first time using scanning electron microscopy (SEM), Hall measurements, photoluminescence (PL), and time-resolved PL. When a certain amount of Al was incorporated into the GaN films, the room temperature photoluminescence intensity of the films was approximately two orders larger than that of the undoped GaN. More importantly, the electron mobility significantly increased from 130 for the undoped sample to $500\textrm{cm}^2/Vs$ for the sample grown at a TMAl flow rate of $10{\mu}mol/min$, while the unintentional background concentration only increased slightly relative to the TMAl flow. The incorporation of Al as an isoelectronic dopant into GaN was easy during MOCVD growth and significantly improved the optical and electrical properties of the film. This was believed to result from a reduction in the dislocation-related non-radiative recombination centers or certain other defects due to the isoelectronic Al-doping.

• 한국신재생에너지학회:학술대회논문집
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• 2006.06a
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• pp.214-217
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• 2006

p-type 비정질 실리콘 에미터와 n-type 실리콘 기판의 계면에 intrinsic 비정질 실리콘을 증착함으로써 계면의 재결합을 억제하여 20%가 넘는 효율을 보이는 이종접합 태양전지가 Sanyo에 의해 처음 제시된 후 intrinsic layer에 대한 연구가 많이 진행되어 왔다. 하지만 p-type wafer의 경우는 n-type에 비해 intrinsic buffer의 효과가 미미하거나 오히려 특성을 저하시킨다는 보고가 있으며 그 이유로는 minority carrier에 대한 barrier가 상대적으로 낮다는 것과 partial epitaxy가 발생하기 때문으로 알려져 있다. 본 연구에서는 partial epitaxy를 억제하기 위한 방법으로 증착 온도를 낮추고 QSSPC를 사용하여 minority carrier lifetime을 측정함으로써 각 온도에 따른 passivation 특성을 평가하였다. 또한 SiH4에 H2를 섞어서 증착하였을 경우 각 dilution ratio(H2 flow/SiH4 flow)에서의 passivation 특성 또한 평가하였다. 기판 온도 $100^{\circ}C$에서 증착된 샘플의 lifetime이 가장 길었으며 그 이하와 이상에서는 lifetime이 감소하는 경향을 보였다 낮은 온도에서는 박막 자체의 결함이 증가하였기 때문이며 높은 온도에서는 partial epitaxy의 영향으로 추정된다. H2 dilution을 하여 증착한 샘플의 경우 SiH4만 가지고 증착한 샘플보다 훨씬 높은 lifetime을 가졌다 이 또한 박막 FT-IR결과로부터 H2 dilution을 한 경우 compact한 박막이 형성되는 것을 확인할 수 있었는데 radical mobility 증가에 의한 박막 특성 향상이 원인으로 생각된다.