• Proceedings of the Korean Society of Precision Engineering Conference
• /
• 2008.06a
• /
• pp.959-960
• /
• 2008

• Proceedings of the Korean Vacuum Society Conference
• /
• 2008.02a
• /
• pp.306-306
• /
• 2008

• Proceedings of the Korean Vacuum Society Conference
• /
• 2011.08a
• /
• pp.262-263
• /
• 2011

Flexible electronics, a future technology of electronics, require a low cost integrated circuit that can be built on various types of the flexible substrates. As a potential candidate for this application, a single walled carbon nanotube network is studied as an active device with a scheme of thin film transistor. Transistors are formed on a plastic foil by the Roll-to-Roll (R2R) and the Roll-to-Device (R2D) printing method. For both printing methods, electrical transports for the transistors are presented with the temperature dependence of threshold voltage (V_Th) and mobility from the measured transfer curves at temperatures ranging from 10 K to 300 K. It is observed that ${\mu}=0.044cm^2/V{\cdot}sec$ and V_Th=7.28V for R2R and ${\mu}=0.025cm^2/V{\cdot}sec$ and V_Th=3.10V for R2D, both for the temperature at 300K. Temperature dependence of mobility and V_Th is observed. However for R2R, the temperature dependence of V_Th is constant. It is the difference between, R2R and R2D.

• Journal of the Semiconductor & Display Technology
• /
• v.17 no.2
• /
• pp.57-60
• /
• 2018

Recently, Thin-film transistors (TFTs) are fundamental building blocks for state-of-the-art microelectronics, such as flat-panel displays and system-on-glass. Zinc oxide thin films have the advantage that they can grow at low temperature and can obtain high charge movility. Also the zinc oxide thin film can be used to control the resistance according to the oxygen content, so it is very easy to obtain the desired physical properties. In this paper, we fabricated a zinc oxide thin film on a polished copper substrate through a solution process, then improved the crystallinity through a geat treatment porcess, and studied to transfer it on a flexible substrate after the heat treatment was completed.

• Journal of the Korean institute of surface engineering
• /
• v.41 no.1
• /
• pp.1-5
• /
• 2008

In this work, improvement of mechanical and electrical properties of gate dielectric layer for flexible organic thin film transistor (OTFT) devices was investigated. In order to increase the mechanical flexibility of PVP (poly(4-vinyl phenol) organic gate dielectric, a very thin inorganic $HfO_2$ layers with the thickness of $5{\sim}20nm$ was inserted in between the spin-coated PVP layers. Insertion of the inorganic $HfO_2$ in the laminated organic/inorganic structure of PVP/$HfO_2$/PVP layer led to a dramatic reduction in the leakage current compared to the pure PVP layer. Under repetitive cyclic bending, the leakage current density of the laminated PVP/$HfO_2$/PVP layer with the thickness of 20-nm $HfO_2$ layer was not changed, while that of the single PVP layer was increased significantly. Mechanical flexibility tests of the OTFT devices by cyclic bending with 5 mm bending radius indicated that the leakage current of the laminated PVP/$HfO_2$(20 nm)/PVP gate dielectric in the device structure was also much smaller than that of the single PVP layer.

• 한국정보디스플레이학회:학술대회논문집
• /
• 2004.08a
• /
• pp.153-156
• /
• 2004

A newly developed flexible active-matrix (AM-) electrophoretic display (EPD) is reported. The AM-EPD features: (1) low-temperature polycrystalline silicon (LTPS) thin film transistor (TFT) technology, (2) fully integrated scan- and data-drivers, (3) flexibility and light-weight realized by transferring the whole circuits onto a plastic substrate using $SUFTLA^{TM}$ (Surface Free Technology by Laser Annealing/Ablation) process. A large storage capacitor is formed in each pixel so that driving electric field can be kept sufficiently strong during a writing period Two-phase driving scheme, a reset-phase which erases a previous image and a writing-phase for writing a new image, was chosen to cope with EPD's high driving voltage. The flexible AM-EPD has been successfully operated with a driving voltage of 8.5 V.

• Journal of the Korean Institute of Telematics and Electronics A
• /
• v.32A no.2
• /
• pp.140-150
• /
• 1995

A symbolic layout generator, called Flexible Module Generator (FMG), has been developed for transgorming a given CMOS circuit netlist into an optimized symbolic layout. Contrary to other conventional module generators which place transistors either in horizontal or in vertical direction, FMG places transittors in any hence can multiples of 90$^{\circ}$. This flexible layout style can maximize the diffusion sharing and hence can reduce the wire-length for both of area minimization and performance improvement. In FMG, transistors are initially randomly placed and then selected transistors are iteratively replaced using an optimization technique based on simulated evolution. Whenever a transistor is replaced, the affected nets are rerouted. Constraints on the shape, aspect ratio, and critical path delays are considered during the optimization process. Routing is performed by using a modified maze router on polysilicon, metal 1, and metal 2 interconnection layers. additional routing grids are added, if necessary, for complete routing. Unused rows or columns are removed after routing for area minimization. Experimental reasults show that FMG synthesizes satisfactory layouts.

• 한국정보디스플레이학회:학술대회논문집
• /
• 2009.10a
• /
• pp.920-922
• /
• 2009

Flexible, transparent thin-film transistor with active layers composed of carbon nanotube-based conducting ink were fabricated on a plastic substrate by ink-jet printing. The properties of the formulated conducting ink containing carbon nanotubes, a conducting polymer, and additives were characterized and optimized. The conducting ink was applied to flexible thin-film transistors using ink-jet printing.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2014.02a
• /
• pp.277.2-277.2
• /
• 2014

For next-generation electronic applications, human-machine interface devices have recently been demonstrated such as the wearable computer as well as the electronic skin (e-skin). For integration of those systems, it is essential to develop many kinds of components including displays, energy generators and sensors. In particular, flexible sensing devices to detect some stimuli like strain, pressure, light, temperature, gase and humidity have been investigated for last few decades. Among many condidates, a pressure sensing device based on organic field-effect transistors (OFETs) is one of interesting structure in flexible touch displays, bio-monitoring and e-skin because of their flexibility. In this study, we have investigated a flexible e-skin based on highly sensitive, pressure-responsive OFETs using microstructured ferroelectric gate dielectrics, which simulates both rapidly adapting (RA) and slowly adatping (SA) mechanoreceptors in human skin. In SA-type static pressure, furthermore, we also demonstrate that the FET array can detect thermal stimuli for thermoreception through decoupling of the input signals from simultaneously applied pressure. The microstructured highly crystalline poly(vinylidene fluoride-trifluoroethylene) possessing piezoelectric-pyroelectric properties in OFETs allowed monitoring RA- and SA-mode responses in dyanamic and static pressurizing conditions, which enables to apply the e-skin to bio-monitoring of human and robotics.

• Korean Journal of Materials Research
• /
• v.21 no.2
• /
• pp.115-119
• /
• 2011

Si Nanowire (NW) field effect transistors (FETs) were fabricated on hard Si and flexible polyimide (PI) substrates, and their electrical characteristics were compared. Si NWs used as channels were synthesized by electroless etching method at low temperature, and these NWs were refined using a centrifugation method to get the NWs to have an optimal diameter and length for FETs. The gate insulator was poly(4-vinylphenol) (PVP), prepared using a spin-coating method on the PI substrate. Gold was used as electrodes whose gap was 8 ${\mu}m$. These gold electrodes were deposited using a thermal evaporator. Current-voltage (I-V) characteristics of the device were measured using a semiconductor analyzer, HP-4145B. The electrical properties of the device were characterized through hole mobility, $I_{on}/I_{off}$ ratio and threshold voltage. The results showed that the electrical properties of the TFTs on PVP were similar to those of TFTs on $SiO_2$. The bending durability of SiNWs TFTs on PI substrate was also studied with increasing bending times. The results showed that the electrical properties were maintained until the sample was folded about 500 times. But, after more than 1000 bending tests, drain current showed a rapid decrease due to the defects caused by the roughness of the surface of the Si NWs and mismatches of the Si NWs with electrodes.