• Proceedings of the Korean Institute of Surface Engineering Conference
• /
• 2007.04a
• /
• pp.1-2
• /
• 2007

플렉서블 능동구동형 유기전계발광(Flexible AMOLED) 디스플레이 개발에 있어 핵심기술이라 할 수 있는 high barrier 특성을 갖는 고분자 기판, 능동구동 소자 및 flexible OLED 제작 기술에 대한 연구를 수행하였다. Polyacryl/SiON 복합층을 사용하여 OLED에 적합한 barrier 특성(투습율 : $10^{-5}\;{\sim}\;10^{-6}\;g/m^2-day$)을 가진 고분자 기판을 개발하였으며 이와 더불어 ULTPS TFT, OTFT 및 flexible OLED 소자를 구현하였다.

• 한국정보디스플레이학회:학술대회논문집
• /
• 2009.10a
• /
• pp.211-214
• /
• 2009

In this paper we will outline the opportunities for flexible OLED devices, both for display and solid-state lighting applications. We will present our recent data, and discuss future challenges, for low power consumption phosphorescent OLED technology fabricated on flexible substrates to enable a new generation of energy efficient electronic devices.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2007.06a
• /
• pp.401-402
• /
• 2007

The preparation and characteristics of ITO anode films grown using a linear facing target sputtering (FTS) technique for use in organic light emitting diodes (OLED) and flexible OLED is described. The electrical, optical, and work function of the ITO anode, which was prepared by linear FTS at room temperature, were comparable to those of commercial ITO anode films. In particular, linear FTS-grown ITO films shows very smooth surface without defects such as pin hole and cracks due to low substrate temperature. Furthermore OLED with the linear FTS-grown ITO anode film shows comparable electrical and optical properties to those of OLED with the commercial crystalline-ITO anode film. This suggested that linear FTS is promising thin film technology for preparing high quality anode film in OLEDs and flexible OLEDs.

• 한국정보디스플레이학회:학술대회논문집
• /
• 2009.10a
• /
• pp.998-1001
• /
• 2009

A new flexible TFT backplane structure with improved mechanical reliability is proposed. Amorphous indium-gallium-zinc-oxide (a-IGZO) thin film transistors based on this structure have been fabricated on a polyimide substrate, and the resultant mechanical durability has been evaluated in a cyclic bending test. The panel can withstand 10,000 bending cycles at a bending radius of 5 mm without any noticeable TFT degradation. After 10K bending cycles, the change of threshold voltage, mobility, sub-threshold slope, and gate leakage current were only -0.22V, -0.13$cm^2$/V-s, -0.05V/decade, and $-3.05{\times}10^{-13}A$, respectively.

• Korean Chemical Engineering Research
• /
• v.50 no.3
• /
• pp.574-581
• /
• 2012

The relatively short lifetime is a major obstruction for the commercial applications of OLED. One of the reason for the short lifetime is that the organic materials are interacted with water or oxygen in the atmosphere. Protection of water or oxygen from diffusing into the organic material layers are necessary to increase the lifetime of OLED. Although encapsulation of OLED with glass or metal cans has been established, passivation methods of OLED by organic/inorganic thin films are still being developed. In this paper we have developed in-situ passivation system and thin film passivation method using PECVD by which deposition can be performed at room temperature. We have analyzed the characteristics of the passivated OLED device also. The WVTR (Water Vapor Transmission Rate) for the inorganic thin film mono-layer can be reached down to $1{\times}10^{-2}g/m^2{\cdot}day$ and improved lifetime can be obtained. Thin film passivation methods are expected to be applied to flexible display.

• 한국정보디스플레이학회:학술대회논문집
• /
• 2005.07b
• /
• pp.1374-1377
• /
• 2005

Top-emitting organic light-emitting diode (TEOLED) was fabricated on flexible substrate of PES film. Aluminum and Chromium multilayer was used as an anode of TEOLED and the TEOLEDs of Cr(20nm)/Al(100nm)/Cr(20nm)/NPB(60nm)/Alq(60nm)/LiF(1nm)/Al(2nm)/Ag(20nm)/NPB(200nm) has been fabricated on PES film and Si wafer for control device. The TEOLED on PES film which had good anode surface morphology, showed very similar device characteristics to that on Si wafer.

• 한국정보디스플레이학회:학술대회논문집
• /
• 2005.07a
• /
• pp.609-613
• /
• 2005

Advanced mobile communication devices require a bright, high information content display in a small, light-weight, low power consumption package. In this paper we will outline our progress towards developing such a low power consumption active-matrix flexible OLED ($FOLED^{TM}$) display. Our work in this area is focused on three critical enabling technologies. The first is the development of a high efficiency long-lived phosphorescent OLED ($PHOLED{TM}$) device technology, which has now proven itself to be capable of meeting the low power consumption performance requirements for mobile display applications. Secondly, is the development of flexible active matrix backplanes, and for this our team are employing poly-Si TFTs formed on metal foil substrates as this approach represents an attractive alternative to fabricating poly-Si TFTs on plastic for the realization of first generation flexible active matrix OLED displays. Unlike most plastics, metal foil substrates can withstand a large thermal load and do not require a moisture and oxygen permeation barrier. Thirdly, the key to reliable operation is to ensure that the organic materials are fully encapsulated in a package designed for repetitive flexing. We also present progress in operational lifetime of encapsulated T-PHOLED pixels on planarized metal foil and discuss PHOLED encapsulation strategy.

• Journal of the Semiconductor & Display Technology
• /
• v.11 no.1
• /
• pp.29-33
• /
• 2012

In this study, we have investigated the structural and electrical characteristics of IZO thin films deposited under hydrogen atmosphere on flexible substrate for the OLED (organic light emitting diodes) devices. For this purpose, PES was used for flexible substrate and IZO thin films were deposited by RF magnetron sputtering under hydrogen ambient gases (Ar, $Ar+H^2$) at room temperature. In order to investigate the influences of the hydrogen, the flow rate of hydrogen in argon mixing gas has been changed from 0.1sccm to 0.5sccm. All the samples show amorphous structure regardless of flow rate. The electrical resistivity of IZO films increased with increasing flow rate of $H^2$ under $Ar+H^2$. All the films showed the average transmittance over 85% in the visible range. The OLED device was fabricated with different IZO electrodes made by configuration of IZO/$\acute{a}$-NPD/DPVB/$Alq_3$/LiF/Al to elucidate the performance of IZO substrate. OLED devices with the amorphous-IZO (a-IZO) anode film show good current density-voltage-luminance characteristics. This suggests that flat surface roughness and low electrical resistivity of a-IZO anode film lead to more efficient anode material in OLED devices.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2006.06a
• /
• pp.491-492
• /
• 2006

We report on the fabrication of organic-based flexible display using an amorphous IZO anode grown at room temperature. The IZO anode films were grown by a conventional DC reactive sputtering on polycarbonate (PC) substrate at room temperature using a synthesized IZO target in a Ar/$O_2$ ambient. X-ray diffraction examination results show that the IZO anode film grown at room temperature is complete amorphous structure due to low substrate temperature. It is shown that the $Ir(ppy)_3$ doped flexible organic light emitting diode (OLED) fabricated on the IZO anode exhibit comparable current-voltage-luminance characteristics to OLED fabricated on conventional ITO/glass substrate. These findings indicate that the IZO anode film grown on PC substrate is a promising anode materials for the fabrication of organic based flexible displays.

• Proceedings of the Materials Research Society of Korea Conference
• /
• 2009.05a
• /
• pp.36.1-36.1
• /
• 2009

OLED(organic light emitting diode)는 차세대 평판 디스플레이로 전자종이, 입는 디스플레이 등 flexible한 디스플레이로도 주목받고 있다. 하지만, OLED의 가장 큰 단점 중의 하나가 수분과 산소에 매우 민감하다는 것으로 이것은 OLED의 lifetime과 연결된다. 따라서 이에 대한 mechanism의 확립이 필요하다. 따라서 본 연구에서는, flexible한 OLED에 적용되는 금속 코팅막의 적층구조 및 기판의 노출온도에 따른 금속 코팅막의 수분침투 특성에 대해 MOCON의 weight gain test (WGT)를 통해 barrier layer에 대해 평가하고 이에 대한 mechanism을 확립하는데 그 목적이 있다. 금속 코팅막은 OLED의 cathode와 anode 재료로 많이 사용되는 Al과 ITO를 sputter장비를 이용해 single layer와 multi-layer의 두 가지 구조로 PET기판에 증착하였다. 또한, 노출온도에 따른 특성을 알아보고자 bare PET / ITO coated PET(single layer $50{\mu}m$) / Al coated PET(single layer $200{\mu}m$)의 세 가지 시편을 제작하였다. 이 시편을 각각 $25^{\circ}C$, $37.8^{\circ}C$, $50^{\circ}C$의 온도에서 test를 진행하였고 이 과정을 100%RH, 70%RH, 40%RH조건의 수분조건에서 진행하여 각각의 수분조건에서 각각의 온도에 따른 금속 코팅막의 수분침투 특성에 대한 mechanism을 확립하였다. 적층구조에 따른 수분침투 특성 평가 결과 multi-layer가 single layer보다 더 우수한 수분침투의 barrier 특성을 나타냈었다. 그리고 각 온도에 따른 test결과 온도가 증가할수록 barrier의 특성이 나빠짐이 보였다.