• 제목/요약/키워드: Flexible Electronics

검색결과 950건 처리시간 0.034초

Flexible Electronics Devices for Smart Card Applications

  • Hou, Jack;Kimball, Bob;Vincent, Bryan;Ratcliffe, Bill;Mahan, Mike
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2008년도 International Meeting on Information Display
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    • pp.75-77
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    • 2008
  • Flexible electronics devices such as plastic display, thin film battery, membrane switch, organic memory for smart card applications will be presented. The performance and power consumption of various display technologies will be compared for OTP requirement in smart cards. Wireless power transmission by RF coupling through an antenna provides a potential power solution to smart cards. Finally, the general trend of smart card future developments will be discussed.

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플렉시블/웨어러블 일렉트로닉스 최신 연구동향 (Recent Progress in Flexible/Wearable Electronics)

  • 강석희;홍석원
    • Journal of Welding and Joining
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    • 제32권3호
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    • pp.34-42
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    • 2014
  • Flexible devices have been developed from their rigid, heavy origins to become bendable, stretchable and portable. Such a paper displays, e-skin, textile electronics are emerging research areas and became a mainstream of overall industry. Thin film transistors, diodes and sensors built on plastic sheets, textile and other unconventional substrates have a potential applications in wearable displays, biomedical devices and electronic system. In this review, we describe current trends in technologies for flexible/wearable electronics.

ZnO-based thin-film transistor inverters using top and bottom gate structures

  • Oh, Min-Suk;Kim, Yong-Hoon;Park, Sung-Kyu;Han, Jeong-In;Lee, Ki-Moon;Im, Seong-Il;Lee, Byoung-H.;Sung, Myung-M.
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2009년도 9th International Meeting on Information Display
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    • pp.461-463
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    • 2009
  • We report on the fabrication of ZnO-based thin-film transistor (TFT) inverters with top and bottom gate structures with $Al_2O_3$ dielectrics grown by atomic layer deposition (ALD). Since the top gate ZnO-based TFT showed somewhat lower field effect mobility than that of the bottom gate device, our ZnO-based TFT inverters were designed with identical dimensions for both channels. This TFT inverter device demonstrated an high voltage gain at a low supply voltage of 5 V and clear dynamic behavior.

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Oxide/Organic Hybrid TFTs for Flexible Devices

  • Yang, Shin-Hyuk;Cho, Doo-Hee;KoPark, Sang-Hee;Lee, Jeong-Ik;Cheong, Woo-Seok;Yoon, Sung-Min;Ryu, Min-Ki;Byun, Chun-Won;Kwon, Oh-Sang;Cho, Kyoung-Ik;Chu, Hye-Yong;Hwang, Chi-Sun;Ahn, Taek;Choi, Yoo-Jeong;Yi, Mi-Hye;Jang, Jin
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2009년도 9th International Meeting on Information Display
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    • pp.393-395
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    • 2009
  • We fabricated oxide and oxide/organic hybrid TFTs on a glass substrate using the photolithography process under $200^{\circ}C$. We adopt the solution processed organic ferroelectric materials of P(VDF-TrFE) and polyimide (KSPI) insulator for 1-T structure memory and flexible device, respectively. All devices have successfully operated and showed the possibility of hybrid TFTs for the application to the flexible electronic devices.

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Stability-Enhanced Liquid Crystal Mode for Flexible Display Applications

  • Jung, Jong-Wook;Jang, Se-Jin;Lee, You-Jin;Kim, Hak-Rin;Jin, Min-Young;Kim, Jae-Hoon
    • Journal of Information Display
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    • 제6권2호
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    • pp.1-6
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    • 2005
  • We demonstrated stability-enhanced liquid crystal (LC) displays using pixel-isolated LC mode in which LC molecules are isolated in pixel by horizontal polymer layer and vertical polymer wall. The device shows good electro-optic properties against external point or bending pressure due to the polymer structures. The polymer wall acts as supporting structure from mechanical pressure and prevents the cell gap from bending. Moreover, the polymer layer acts as an adhesive to ensure a tight attachment of the two substrates. We present herein various methods for producing polymer structures by using an anisotropic phase separation from LC and polymer composites or patterned micro-structures for stable flexible liquid crystal displays.

유연·신축성 전자 소자 개발을 위한 은 나노와이어 기반 투명전극 기술 (Recent Trends in Development of Ag Nanowire-based Transparent Electrodes for Flexible·Stretchable Electronics)

  • 김대곤;김영민;김종웅
    • 마이크로전자및패키징학회지
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    • 제22권1호
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    • pp.7-14
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    • 2015
  • Recently, advances in nano-material researches have opened the door for various transparent conductive materials, which include carbon nanotube, graphene, Ag and Cu nanowire, and printable metal grids. Among them, Ag nanowires are particularly interesting to synthesize because bulk Ag exhibits the highest electrical conductivity among all metals. Here we reviewed recently-published research works introducing various devices from organic light emitting diode to tactile sensing devices, all of which are employing AgNW for a conducting material. They proposed methods to enhance the stretchability and reversibility of the transparent electrodes, and apply them to make various flexible and stretchable electronics. It is expected that Ag nanowires are applicable to a wide range of high-performance, low-cost, stretchable electronic devices.

플렉서블 전자소재 산업 동향 (Flexible Electronic Materials Industry Trend)

  • 박종문;이수연;노태문;이정익;이진호
    • 전자통신동향분석
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    • 제36권3호
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    • pp.65-75
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    • 2021
  • In the era of the 4th industrial revolution, interest in flexible devices is increasing for information and communication technology electronic products. This is a hot technology field in which competition is intensifying to preoccupy the global market for flexible electronic devices because of the many advantages of ultra-lightweight, flexibility, design diversity, high applicability, and low cost. Some flexible electronic products have been commercialized in Korea, but they are still inadequate in terms of price versus performance, so technology development is required continuously. Particularly, the development of flexible electronic materials is emerging as a key factor for flexible electronic device applications. In this study, we will look into the flexible electronic material technology and industry trends following the trend of flexible technology changes in the display, secondary battery, and solar cell, which has emerged as national core industry and has secured global competitiveness. In addition, I want to introduce the Flexible Electronic Material Center, which was established to foster the flexible electronic material industry.

High Performance Flexible Inorganic Electronic Systems

  • 박귀일;이건재
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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    • pp.115-116
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    • 2012
  • The demand for flexible electronic systems such as wearable computers, E-paper, and flexible displays has increased due to their advantages of excellent portability, conformal contact with curved surfaces, light weight, and human friendly interfaces over present rigid electronic systems. This seminar introduces three recent progresses that can extend the application of high performance flexible inorganic electronics. The first part of this seminar will introduce a RRAM with a one transistor-one memristor (1T-1M) arrays on flexible substrates. Flexible memory is an essential part of electronics for data processing, storage, and radio frequency (RF) communication and thus a key element to realize such flexible electronic systems. Although several emerging memory technologies, including resistive switching memory, have been proposed, the cell-to-cell interference issue has to be overcome for flexible and high performance nonvolatile memory applications. The cell-to-cell interference between neighbouring memory cells occurs due to leakage current paths through adjacent low resistance state cells and induces not only unnecessary power consumption but also a misreading problem, a fatal obstacle in memory operation. To fabricate a fully functional flexible memory and prevent these unwanted effects, we integrated high performance flexible single crystal silicon transistors with an amorphous titanium oxide (a-TiO2) based memristor to control the logic state of memory. The $8{\times}8$ NOR type 1T-1M RRAM demonstrated the first random access memory operation on flexible substrates by controlling each memory unit cell independently. The second part of the seminar will discuss the flexible GaN LED on LCP substrates for implantable biosensor. Inorganic III-V light emitting diodes (LEDs) have superior characteristics, such as long-term stability, high efficiency, and strong brightness compared to conventional incandescent lamps and OLED. However, due to the brittle property of bulk inorganic semiconductor materials, III-V LED limits its applications in the field of high performance flexible electronics. This seminar introduces the first flexible and implantable GaN LED on plastic substrates that is transferred from bulk GaN on Si substrates. The superb properties of the flexible GaN thin film in terms of its wide band gap and high efficiency enable the dramatic extension of not only consumer electronic applications but also the biosensing scale. The flexible white LEDs are demonstrated for the feasibility of using a white light source for future flexible BLU devices. Finally a water-resist and a biocompatible PTFE-coated flexible LED biosensor can detect PSA at a detection limit of 1 ng/mL. These results show that the nitride-based flexible LED can be used as the future flexible display technology and a type of implantable LED biosensor for a therapy tool. The final part of this seminar will introduce a highly efficient and printable BaTiO3 thin film nanogenerator on plastic substrates. Energy harvesting technologies converting external biomechanical energy sources (such as heart beat, blood flow, muscle stretching and animal movements) into electrical energy is recently a highly demanding issue in the materials science community. Herein, we describe procedure suitable for generating and printing a lead-free microstructured BaTiO3 thin film nanogenerator on plastic substrates to overcome limitations appeared in conventional flexible ferroelectric devices. Flexible BaTiO3 thin film nanogenerator was fabricated and the piezoelectric properties and mechanically stability of ferroelectric devices were characterized. From the results, we demonstrate the highly efficient and stable performance of BaTiO3 thin film nanogenerator.

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