• 방송공학회논문지
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• 제15권2호
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• pp.290-303
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• 2010

최근 LCD, PDP, OLED와 같은 평판 디스플레이들의 대중적인 인기로 인해 디스플레이 화질 및 색 개선에 대한 연구가 활발히 이루어지고 있다. 최적의 디스플레이 색을 제공하기 위한 연구들 중 하나로, 사용자 선호도에 기반한 영상 색온도 자동 변환 연구가 있다. 본 논문에서는 기존의 사용자 선호도 기반 색온도 변환 방법에 대한 문제점을 정의하고, MPEG-7 색온도 서술자에서 제시된 색온도 구간에 따른 사용자 선호도 경향을 검증한다. 분석된 사용자 선호도에 근거하여 최적 색온도 변환 커브를 제시한다. 일원분산분석(ANOVA)을 통해 분석한 결과, 색온도 구간에 대한 사용자 선호도 경향은 기존의 연구 결과와 유사한 결과를 보였고, 반복 색온도 변환 실험의 결과는 통계적으로 유의하지 않았다.

• 전기학회논문지
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• 제65권12호
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• pp.2014-2018
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• 2016

Transparent, conductive electrode films, showing the particular characteristics of good conductivity and high transparency, are of considerable research interest because of their potential for use in opto-electronic applications, such as smart window, photovoltaic cells and flat panel displays. Multilayer transparent electrodes, having a much lower electrical resistance than widely-used transparent conducting oxide electrodes, were prepared by using RF/DC magnetron sputtering system. The multilayer structure consisted of three layers, [NiInZnO(NIZO)/Ag/NIZO]. The optical and electrical properties of the multilayered NIZO/Ag/NIZO structure were investigated in relation to the thickness of each layer. The optical and electrical characteristics of multilayer structures have been investigated as a function of the Ag and NIZO film thickness. High-quality transparent conductive films have been obtained, with sheet resistance of $9.8{\Omega}/sq$ for Ag film thickness of 8 nm. Also the multilayer films of inserted Ag 8 nm thickness showed a high optical transmittance above 93% in the visible range. The electrical and optical properties of the new multilayer films were mainly dependent on the thickness of Ag insertion layer.

• 대한전자공학회논문지TE
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• 제39권2호
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• pp.6-10
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• 2002

플라스틱 기반 평판디스플레이 장치를 위한 Al 박막(1000-4000${\AA}$)을 직류-마그네트론 스퍼터링으로 유리 기판과 고분자 플라스틱 기판위에 증착하였다. 고분자 플라스틱 기판위에 증착된 Al박막의 전기적 특성을 향상시키고, 열 팽창을 줄이기 위하여 단계적 열 처리법을 사용하였다. 이러한 공정을 사용함으로써, 고분자 기판위에 증착된 박막의 크랙과 기판의 휨현상이 없는 Al 박막을 성공적으로 증착하였다. 또한, Al 박막의 열처리와 증착공정은 모두 200$^{\circ}C$ 이하에서 이루어 졌기 때문에, 이러한 저온 공정은 고분자 플라스틱 기판에 적용이 가능하다. Al 박막의 특성과 신뢰성을 조사하기 위하여 주사 전자 현미경(SEM), 원자력 현미경(AFM), X-선 회절 분석법(XRD)과 비저항등의 전기적 특성을 측정하였다.

• Transactions on Electrical and Electronic Materials
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• 제4권6호
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• pp.13-16
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• 2003

Mn-doped $ZnGa_{2}O_{4}$:$Mn^{2+}$ (M=S, Se) thin film phosphors have been grown using a pulsed laser deposition technique under various growth conditions. The structural characterization carr~ed out on a series of $ZnGa_{2}O_{4}$:$Mn^{2+}$ (M=S, Se) films grown on MgO(l00) substrates usmg Zn-rich ceramic targets. Oxygen pressure was varied from 50 to 200 mTorr and Zn/Ga ratio was the function of oxygen pressure. XRD patterns showed that the lattice constants of the $ZnGa_{2}O_{4}$:$Mn^{2+}$ (M=S, Se) thin film decrease with the substitution of sulfur and selenium for the oxygen in the $ZnGa_2O_4$. Measurements of photoluminescence (PL) properties of $ZnGa_{2}O_{4}$:$Mn^{2+}$ (M=S, Se) thin films have indicated that MgO(100) is one of the most promised substrates for the growth of high quality $ZnGa_2O_{4-x}M_{x}$:$Mn^{2+}$ (M=S, Se) thin films. In particular, the incorporation of Sulfur or Selenium into $ZnGa_2O_4$ lattice could induce a remarkable increase in the intensity of PL. The increasing of green emission intensity was observed with $ZnGa_2O_{3.925}Se_{0.075}:$Mn^{2+}$ and $ZnGa_2O_{3.925}S_{0.05}$:$Mn^{2+}$ films, whose brightness was increased by a factor of 3.1 and 1.4 in comparison with that of $ZnGa_{2}O_{4}$:$Mn^{2+}$ films, respectively. These phosphors may promise for application to the flat panel displays.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 하계학술대회 논문집 Vol.7
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• pp.450-450
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• 2006

Organic light-emitting diodes (OLED) as pixels for flat panel displays are being actively pursued because of their relatively simple structure, high brightness, and self-emitting nature [1, 2]. The top-emitting diode structure is preferred because of their geometrical advantage allowing high pixel resolution [3]. To enhance the performance of TOLEDs, it is important to deposit transparent top cathode films, such as transparent conducting oxides (TCOs), which have high transparency as well as low resistance. In this work, we report on investigation of the characteristics of an indium tin oxide (ITO) cathode electrode, which was deposited on organic films by using a radio-frequency magnetron sputtering method, for use in top-emitting organic light emitting diodes (TOLED). The cathode electrode composed of a very thin layer of Mg-Ag and an overlaying ITO film. The Mg-Ag reduces the contact resistivity and plasma damage to the underlying organic layer during the ITO sputtering process. Transfer length method (TLM) patterns were defined by the standard shadow mask for measuring specific contact resistances. The spacing between the TLM pads varied from 30 to $75\;{\mu}m$. The electrical properties of ITO as a function of the deposition and annealing conditions were investigated. The surface roughness as a function of the plasma conditions was determined by Atomic Force Microscopes (AFM).

• 한국진공학회:학술대회논문집
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• 한국진공학회 2000년도 제18회 학술발표회 논문개요집
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• pp.212-212
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• 2000

Since the first obserbvation of carbon nanotubes, extensive researches have been done for the synthesis using arc discharge, laser vaporization, and plasma-enhanced chemical vapor deposition. Carbon nanotubes have unique physical and chemical properties and can allow nanoscale devices. Vertically aligned carbon nanotubes with high quality on a large area is particularly important to enable both fundamental studies and applications, such as flat panel displays and vacuum microelectronics. we have grown vertically aligned carbon nanotubes on a large area of Si substrates by thermal chemical vapor deposition using C2H2 gas at 750-950$^{\circ}C$. we deposited catalytic metal on Si susbstrate using thermal evaporation. The nanotubes reveal highly purified surface. The carbon nanotubes have multi-wall structure with a hollow inside and it reveals bamboo structure agreed with base growth model. Figure 1 shows SEM micrograph showing vertically aligned carbon nanotubes whih were grown at 950$^{\circ}C$ on a large area (20mm${\times}$30mm) of Si substrates. Figure 2 shows TEM analysis was performed on the carbon nanotubes grown at 950$^{\circ}C$ for 10 min. The carbon nanotubes are multi-wall structure with bamboo shape and the lack of fringes inside the nanotube indicates that the core of the structure is hollow. In our experiment, carbon nanotubes grown by the thermal CVD indicate base growth model.

• 한국재료학회지
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• 제21권7호
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• pp.371-376
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• 2011

We report on the effects of $TiO_2$ doping power on the characteristics of multicomponent $TiO_2$-ITO (TITO) electrodes prepared by a multi-target sputtering system with tilted cathode guns. Both as-deposited and annealed TITO electrodes showed linearly increased sheet resistance and resistivity with increasing $TiO_2$ doping power. However, the TITO electrodes exhibited a fairly high optical transmittance regardless of the $TiO_2$ doping power due to the high transparency of the $TiO_2$. Although the annealed TITO showed much lower sheet resistance and resistivity relative to the as-deposited samples, the electrical properties of the annealed samples exhibited similar dependence on the $TiO_2$ power to the as-deposited samples. In addition, it was found that doping of an anatase $TiO_2$ in the ITO electrode prevented the preferred (222) orientation of the TITO electrodes. Although the TITO electrode showed higher sheet resistance and resistivity than that of the pure ITO electrode, it offers a very smooth surface and usage of a low-cost Ti element. It is thus considered a promising multicomponent transparent conducting electrode for cost-efficient flat panel displays and photovoltatics.

• 공업화학
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• 제25권3호
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• pp.233-236
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• 2014

유기발광 다이오드(Organic light emitting diodes)는 차세대 평판디스플레이로 학문적으로나 산업적으로 많은 관심을 받고 있다. 그러나 고성능 유기발광 다이오드의 생산을 위해서는 극복해야 할 많은 과제들이 여전히 남아있다. 그중 청색발광물질은 자체의 넓은 밴드갭으로 인해 녹색과 적색 발광재료에 비해 낮은 효율을 보이고 있다. 그러므로 많은 사람들이 높은 효율을 가진 청색 발광물질을 개발하기 위해 많은 노력을 기울이고 있다. 따라서 본 논문에서는 유기발광 다이오드의 기본개념과 청색 발광물질의 개발에 대해 간략하게 소개하였다.

• 한국정보통신학회논문지
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• 제11권4호
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• pp.754-759
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• 2007

FED는 잠재적인 평판패널기술에 따라 현재 탐구를 하였다. 특정하게, 최적화는 $Y_2O_3-Nb_2O_5$와 영향으로 효과적인 청색방출 형광체에 따라 형광체의 입자의 크기에 의해 발광이 모이는 정통한 것이었다. 여기는 254nm 이하이며, Bi는 $YNbO_4$ 형광체가 강하게 보였고, 청색 방출대는 비교적 폭이 좁았으며, 약 420-450 nm에 효과가 정점에 달하였다. 특정하게, 0.4 wt% Bi는 이트륨 형광체로서 도핑 이었으며 최대 방출강도를 보였고, $Y_2SiO_5:Ce$ 형광체가 훨씬 많음에 따라 거의 3배였다. 마지막으로 Ce는 $Y_2SiO_5$ 형광체로서 도핑이었으며 광대한 청색방출대와 강하게 나타내었다. 0.02-0.03 mol 농도로서 최대방출강도와 390-420 nm 이며 중심이었다.

• 반도체디스플레이기술학회지
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• 제16권2호
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• pp.94-97
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• 2017

Amorphous Si has been used for data processing circuits in flat panel displays. However, low mobility of the amorphous Si is a limiting factor for the data transmission speed. Metal oxides such as ZnO have been studied to replace the amorphous Si. ZnO is a wide bandgap (3.3 eV) semiconductor with high mobility and good optical transparency. When ZnO is grown by sputtering with $O_2$ as an oxidizer, there can be many ion species arising from $O_2$ decomposition. $O^+$, $O_2{^+}$, and $O^-$ ions are expected to be the most abundant species, and it is not clear which one contributes to the ZnO growth. We applied alternating substrate voltage (0 V and -70 V) during sputtering growth. We studied changes in transistor characteristics induced by the voltage switching. We also compared ZnO grown by dc and rf sputtering. ZnO film was grown at $450^{\circ}C$ substrate temperature. ZnO thin-film transistor grown with these methods showed $7.5cm^2/Vsec$ mobility, $10^6$ on-off ratio, and -2 V threshold voltage.