• 한국전기전자재료학회논문지
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• 제27권2호
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• pp.76-80
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• 2014

Dual-gate PCRAM which unify capacitor-less DRAM and NVM using a PCM instead of a typical SONOS flash memory is proposed as 1 transistor. $VO_2$ changes its phase between insulator and metal states by temperature and field. The front-gate and back-gate control NVM and DRAM, respectively. The feasibility of URAM is investigated through simulation using c-interpreter and finite element analysis. Threshold voltage of NVM is 0.5 V that is based on measured results from previous fabricated 1TPCM with $VO_2$. Current sensing margin of DRAM is 3 ${\mu}A$. PCM does not interfere with DRAM in the memory characteristics unlike SONOS NVM. This novel unified dual-gate PCRAM reported in this work has 1 transistor, a low RESET/SET voltage, a fast write/erase time and a small cell so that it could be suitable for future production of URAM.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2006년도 추계학술대회 논문집 전기물성,응용부문
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• pp.32-33
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• 2006

As next generation nonvolatile memory, chalcogenide-based phase change memory can substitute for a conventional flash memory from its high performance. Also, fast writing speed, low writing voltage, high sensing margin, low power consumption and repetition reliability over $10^{15}$ cycle shows its possibility. At our laboratory, we invented ${Ge_1}{Se_1}{Te_2}$ material to alternate with conventional ${Ge_2}{Sb_2}{Te_5}$ for improve its ability. We respect the ${Ge_1}{Se_1}{Te_2}$ material can be a solution for high power consumption problem and long time at 'set' performance. A conductivity experiment from variable temperature was performed to see reliability of repetition at read and write performance. Compare with conventional ${Ge_2}{Sb_2}{Te_5}$ material, these two materials are used as complex compound to get the finest parameter.

• 한국조명전기설비학회지:조명전기설비
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• 제8권3호
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• pp.54-63
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• 1994

본 연구에서는 판상스페이서 위에 침전극을 고정하고 gap간격 40[mm]에 평판전극을 설치한 gap 간에 10[mm]간격으로 나누어 각 구간내에 스페이서와 같은 재질의 Barrier를 설치하고 파티클을 두었을 때 AC 및 정극성 DC 전압에서의 방전로와 FOV에 대해 연구한 결과 다음과 같은 결론을 얻엇다. 1) Barrier가 고전위측에 위치한 경우와 파티클이 Barrier뒤에 은폐된 경우가 FOV가 높다. 2) 침전극 선단에 파티클 위치할 때 심한 FOV의 감소가 있다. 3) 파티클이 전극간에 게재되면 방전로는 파티클을 경유하므로 FOV는 감소한다.

• Smart Structures and Systems
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• 제6권5_6호
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• pp.661-673
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• 2010

This paper presents recent developments in an extremely compact, wireless impedance sensor node (the WID3, $\underline{W}$ireless $\underline{I}$mpedance $\underline{D}$evice) for use in high-frequency impedance-based structural health monitoring (SHM), sensor diagnostics and validation, and low-frequency (< ~1 kHz) vibration data acquisition. The WID3 is equipped with an impedance chip that can resolve measurements up to 100 kHz, a frequency range ideal for many SHM applications. An integrated set of multiplexers allows the end user to monitor seven piezoelectric sensors from a single sensor node. The WID3 combines on-board processing using a microcontroller, data storage using flash memory, wireless communications capabilities, and a series of internal and external triggering options into a single package to realize a truly comprehensive, self-contained wireless active-sensor node for SHM applications. Furthermore, we recently extended the capability of this device by implementing low-frequency analog-to-digital and digital-to-analog converters so that the same device can measure structural vibration data. The compact sensor node collects relatively low-frequency acceleration measurements to estimate natural frequencies and operational deflection shapes, as well as relatively high-frequency impedance measurements to detect structural damage. Experimental results with application to SHM, sensor diagnostics and low-frequency vibration data acquisition are presented.

• 대한토목학회논문집
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• 제35권6호
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• pp.1269-1276
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• 2015

수문모형 기반의 강우강도-지속시간-홍수량(IDQ) 곡선을 이용하여 홍수예보에 활용하는 기법을 소개하고 그 성능을 평가하였다. 이를 위하여 계측된 유역의 자료를 이용하여 집중형 모형의 검보정을 실시하고 하천의 특보 홍수량에 준하는 등가강우량을 산정하였다. 특보홍수량과 선행함수상태별 IDQ 곡선을 산정되면 발생 가능한 여러 시나리오에 대비할 수 있다. 시범대상유역은 강원도에 위치한 원주천 유역 ($94.4km^2$)이며 주의보 수위(계획홍수량의 50%)와 경보 수위(계획홍수량의 70%)에 해당하는 IDQ 곡선이 산정되었다. 과거 10년간의 자료로부터 선행함수 조건별 IDQ곡선의 홍수예보능력을 평가한 결과, 탐지확률은 0.704, 경보실패율은 0.136, 임계성공지수는 0.633으로 나타났으며, 단일 조건의 IDQ 곡선을 적용한 홍수예보능력에 비해 더 나은 평가지수를 얻을 수 있었다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.436-437
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• 2012

Double patterning technology (DPT) has been suggested as a promising candidates of the next generation lithography technology in FLASH and DRAM manufacturing in sub-40nm technology node. DPT enables to overcome the physical limitation of optical lithography, and it is expected to be continued as long as e-beam lithography takes place in manufacturing. Several different processes for DPT are currently available in practice, and they are litho-litho-etch (LLE), litho-etch-litho-etch (LELE), litho-freeze-litho-etch (LFLE), and self-aligned double patterning (SADP) [1]. The self-aligned approach is regarded as more suitable for mass production, but it requires precise control of sidewall space etch profile for the exact definition of hard mask layer. In this paper, we propose etch end point detection (EPD) in spacer etching to precisely control sidewall profile in SADP. Conventional etch EPD notify the end point after or on-set of a layer being etched is removed, but the EPD in spacer etch should land-off exactly after surface removal while the spacer is still remained. Precise control of real-time in-situ EPD may help to control the size of spacer to realize desired pattern geometry. To demonstrate the capability of spacer-etch EPD, we fabricated metal line structure on silicon dioxide layer and spacer deposition layer with silicon nitride. While blanket etch of the spacer layer takes place in inductively coupled plasma-reactive ion etching (ICP-RIE), in-situ monitoring of plasma chemistry is performed using optical emission spectroscopy (OES), and the acquired data is stored in a local computer. Through offline analysis of the acquired OES data with respect to etch gas and by-product chemistry, a representative EPD time traces signal is derived. We found that the SE-EPD is useful for precise control of spacer etching in DPT, and we are continuously developing real-time SE-EPD methodology employing cumulative sum (CUSUM) control chart [2].

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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• pp.403-404
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• 2013

최근 scaling down의 한계에 부딪힌 DRAM과 Flash Memory를 대체하기 위한 차세대 메모리(Next Generation Memory)에 대한 연구가 활발히 진행되고 있다. ITRS (international technology roadmap for semiconductors)에 따르면 PRAM (phase change RAM), RRAM (resistive RAM), STT-MRAM (spin transfer torque magnetic RAM) 등이 차세대 메모리로써 부상하고 있다. 그 중 RRAM은 간단한 구조로 인한 고집적화, 빠른 program/erase 속도 (100~10 ns), 낮은 동작 전압 등의 장점을 갖고 있어 다른 차세대 메모리 중에서도 높은 평가를 받고 있다 [1]. 현재 RRAM은 주로 금속-산화물계(Metal-Oxide) 저항 변화 물질을 기반으로 연구가 활발하게 진행되고 있다. 하지만 근본적으로 공정 과정에서 산소에 의한 오염으로 인해 수율이 낮은 문제를 갖고 있으며, Endurance 및 Retention 등의 신뢰성이 떨어지는 단점이 있다. 따라서, 본 연구진은 산소 오염에 의한 신뢰성 문제를 근본적으로 해결할 수 있는 다양한 금속-질화물(Metal-Nitride) 기반의 저항 변화 물질을 제안해 연구를 진행하고 있으며, 우수한 열적 안정성($>450^{\circ}C$, 높은 종횡비, Cu 확산 방지 역할, 높은 공정 호환성 [2] 등의 장점을 가진 WN 박막을 저항 변화 물질로 사용하여 저항 변화 메모리를 구현하기 위한 연구를 진행하였다. WN 박막은 RF magnetron sputtering 방법을 사용하여 Ar/$N_2$ 가스를 20/30 sccm, 동작 압력 20 mTorr 조건에서 120 nm 의 두께로 증착하였고, E-beam Evaporation 방법을 통하여 Ti 상부 전극을 100 nm 증착하였다. I-V 실험결과, WN 기반의 RRAM은 양전압에서 SET 동작이 일어나며, 음전압에서 RESET 동작을 하는 bipolar 스위칭 특성을 보였으며, 읽기 전압 0.1 V에서 ~1 order의 저항비를 확보하였다. 신뢰성 분석 결과, $10^3$번의 Endurance 특성 및 $10^5$초의 긴 Retention time을 확보할 수 있었다. 또한, 고저항 상태에서는 Space-charge-limited Conduction, 저저항 상태에서는 Ohmic Conduction의 전도 특성을 보임에 따라 저항 변화 메카니즘이 filamentary conduction model로 확인되었다 [3]. 본 연구에서 개발한 WN 기반의 RRAM은 우수한 저항 변화 특성과 함께 높은 재료적 안정성, 그리고 기존 반도체 공정 호환성이 매우 높은 강점을 갖고 있어 핵심적인 차세대 메모리가 될 것으로 기대된다.

• 도시과학
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• 제8권2호
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• pp.7-12
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• 2019

In this study, the DongPieHong Ditch were taken as the research object, five sampling points were set to measure the COD, NH₃-N,TNandTPindexes. The correlation and principal component analysis were used to judge the main pollution sources and calculate pollution contribution rate. According to the population in the basin, the load of point source pollution into the river was estimated. As a result, the load of COD, NH₃-N and TP into the river was 323.04t/a, 43.8t/a and 3.9t/a, respectively. According to the statistics of the rainfall in the basin, the concentrations of COD, TP and NH₃-N in the initial rainwater were measured and calculated for non-point source pollution, and the results shown that the inflow loads of COD, NH₃-N and TP into the river were 34.59t/a, 0.12t/a and 0.71t/a, respectively. It was found that the main cause of the pollution in the east flash flood gully was point source pollution, and the proportions of COD, NH₃-N and TP into the river were 90.33%, 99.72% and 84.61%, respectively.

• 정보처리학회논문지D
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• 제17D권6호
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• pp.395-404
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• 2010

Solid-State Disks (SSDs)는 빠른 접근 시간, 적은 전력소모, 전기 충격에의 내성과 같은 장점으로 인해 하드 디스크를 대체 할 것으로 기대되고 있다. 그러나 SSDs는 임의 쓰기(random write)로 인한 수명 단축이란 단점이 있으며 이는 SSDs 컨트롤러의 구조와는 별개로 나타나고 있다. SSDs와 관련한 기존 연구는 컨트롤러의 더 나은 디자인과 쓰기 연산의 감소에 주력하였다. 본 연구는 동시에 쓰여지는 경향이 있는 여러 데이터 페이지를 연속적인 블록에 배치하는 방법을 제시한다. 이 방식은 우선 특정 기한 동안 쓰기 연산에 대한 정보를 수집한 후 상기 쓰기 연산에 대한 정보를 트랜잭션화 하여 frequent itemset을 추출하고 이를 연속적인 블록에 재배치하는 과정으로 이루어진다. 또한 본 연구는 frequent itemset의 page를 재배치할 수 있는 알고리즘을 소개한다. TPC-C 기반 실험에 있어 본 연구가 제안한 재배치를 수행한 결과 저장 기기 접근 횟수를 평균 6 % 감소시킬 수 있었다.

• 한국수자원학회:학술대회논문집
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• 한국수자원학회 2016년도 학술발표회
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• pp.204-204
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• 2016

Thailand had set the National Water Management Strategy which covered main six areas in the next 12 years, i.e., by priority: (1) water for household, (2) water for agricultural and industrial production, (3) water for flood and drought management, (4) water for quality issue, (5) water from forest conservation and soil erosion protection, (6) water resources management. However due to the climate change impact, there is a question for all strategies is whether to complete this mission under future climate change. If the impact affects our target, we have to clarify how to mitigate or to adapt with it. Vulnerability assessment was conducted under the framework of ADB's (with the parameters of exposure, sensitivity and adaptive capacity) and the assessments were classified into groups due to their different characteristic and the framework of the National Water Management Strategy, i.e., water supply (rural and urban), water for development (agriculture and others), water disasters (floods (flash, overflow), drought, water quality). The assessments identified the parameters concerned and weight factors used for each groups via expert group discussions and by using GIS mapping technology, the vulnerability maps were produced. The maps were verified with present water situation data (floods, drought, water quality). From the analysis result of this water resources management strategy, we found that 30% of all projects face the big impacts, 40% with low impact, and 30% for no impact. It is clear that water-related agencies have to carefully take care approximately 70% of future projects to meet water resources management strategy. It is recommended that additional issues should be addressed to mitigate the impact from climate risk on water resource management of the country, i.e., water resources management under new risk based on development scenarios, relationship with area-based problems, priority definition by viewpoints of risk, vulnerability (impact and occurrence probability in past and future), water management system in emergency case and water reserve system, use of information, knowledge and technology in management, network cooperation and exchange of experiences, knowledge, technique for sustainable development with mitigation and adaptation, education and communication systems in risk, new impact, and emergency-reserve system. These issues will be described and discussed.