• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.7
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• pp.669-673
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• 2008

ITO thin film was deposited on PC substrate in Facing Targets Sputtering (FTS) system with various sputtering conditions. After it is applied to external bending force, we investigated how change the surface and electrical property of as-deposited ITO thin film. As the L(face-plate distance) of substrate decreases, it found that the maximum crack density is increasing at the center position and decreasing crack density as goes to the edge. So to apply same curvature (r) and bending force to PC substrate with ITO thin film, we fixed the L that is equal to curvature radius (2r). Before bending test, ITO thin films that deposited in the input current of 0.4 A and thickness of 200 nm already had biaxial tensile failure because of each different CTE (Coefficient of Thermal Expansion) and Others had been shown no bending or crack. After bending test, all samples had been shown cracks at about 200 times and as increasing the crack density, resistivity increased.

• Proceedings of the KIEE Conference
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• 1992.07b
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• pp.829-831
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• 1992

Ultrathin metal-oxide-semiconductor(MOS) gate dielectrics have been fabricated by conventional thermal oxidation in $N_2O$ ambient. Compared to oxides grown in $O_2$, $N_2O$ oxides exhibit significantly low flatband voltage and small shift in flatband voltage. $N_2O$ oxidation induces a slight decrease in mobile ionic charge density($N_m$), fixed charge density($N_f$) and surface state charge density($N_{ss}$). This study establishes that $N_2O$ oxides may have a great impact on future MOS ULSI technology in which ultrathin gate dielectrics are required.

• New & Renewable Energy
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• v.3 no.1 s.9
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• pp.27-37
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• 2007

This study is to analyse the feasibility for providing Co-generation plant in Apartment Complex for 4 typical Apartment Complexes located Seoul metropolitan area, The selected complexes are three midium-large size Apartment[nearby 35pyoug of floor area] and one complex of small size Apartment[below 25 pyoung of floor area] for comparison. The necessary data for the study were collected with visitation of each site. The study showed very positive result for the three medium-large size Apartment Complexes of which the average floor area is more than 25 pyoungs, while negative result for the Complex of which average floor area is less than 25 pyoungs. Other than floor size it was found that the electric consumption density also influence the economic feasibility. In study the unit fixed cost of the energy produced from Co-generation plant is one third of the unit variable cost[fuel cost] and it seems better to select high thermal efficiency machine for Co-generation plant even with some higher cost of the plant.

• The Transactions of the Korean Institute of Power Electronics
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• v.23 no.3
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• pp.161-167
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• 2018

In battery-operated systems, an isolated converter is used to interface the utility grid with the system to increase stability when charging and discharging batteries. Systems such as vehicle-to-grids (V2Gs), on-board chargers, and energy storage systems (ESSs) have recently become popular, and the roles of isolated converters have become important considerations in fabricating such devices. A fixed-frequency LLC converter, which is a type of isolated converter, presents the advantages of high efficiency and high power density by performing zero-voltage switching (ZVS) over wide frequency ranges. However, the magnetizing inductance of the LLC converter should be designed to enable ZVS in all switching devices. Therefore, in this study, the operating characteristics of the LLC circuit are analyzed, and an optimal design method for ZVS operation is established. Moreover, an 8 kW LLC high-efficiency and high-power-density resonant converter is designed and tested for ESS application. The LLC converter achieves 98% efficiency at rated power.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.32A no.3
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• pp.68-77
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• 1995

Characteristics of electron cyclotron resonance (ECR) plasma thermal oxide grown at low-temperature have been investigated. The effects of several process parameters such as substrate temperature, microwave power, gas flow rate, and process pressure on the growth rate of the oxide have been also investigated. It was found that the plasma density, reactive ion species, is strongly related to the growth rate of ECR plasma oxied. It was also found that the plasma density increases with microwave power while it decreases with decreasing O2 flow rate. The oxidation time dependence of the oxide thichness showed parabolic characteristics. Considering ECR plasma thermal oxidation at low-temperature, the linear as well as parabolic rate constants calculated from fitting data by using the Deal-Grove model was very large in comparison with conventional thermal oxidation. The ECR plasma oxide grown on (100) crystalline-Si wafer exhibited good electrical characteristics which are comparable to those of thermal oxide: fixed oxide charge(N$_{ff}$)= 7${\times}10^{10}cm^{-2}$, interface state density(N$_{it}$)=4${\times}10^[10}cm^{-2}eV^{-1}$, and breakdown field > 8MV/cm.

• Journal of Radiation Protection and Research
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• v.35 no.3
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• pp.99-104
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• 2010

The potential ability of environmental temperature to enhance the effect of microwave radiation (7 GHz) was experimentally studied for rabbit heating after simultaneous application of both agents. The tested ambient temperatures (30 and $38^{\circ}C$) didn't exert a considerable influence upon rabbit heat homeostasis after the used duration of exposure (3 hours and 15 minutes, correspondingly). The synergistic interaction of microwave irradiation and ambient temperature was demonstrated for rabbit heating. Power flux density of microwave irradiation was shown to be a determinant of the synergistic interaction effectiveness. For the fixed ambient temperature ($30^{\circ}C$), the synergism was shown to be observed only within a definite power flux density ($0-100\;mW{\cdot}cm^{-2}$), inside of which there was an optimal intensity ($20\;mW{\cdot}cm^{-2}$), which maximized the synergistic effect. Any deviation of the power flux density from the optimal value resulted in a reduction of the synergy. It is concluded that any assessment of the health or environmental risks should take into account the synergistic interaction between ambient temperature and microwave radiation.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.25 no.10B
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• pp.1732-1743
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• 2000

In this paper a fixed-delay trellis search with decision feedback (FDTrS/DF) for high-density DVD systems (4.7-15GB) is proposed and implemented with FPGA. The proposed FDTrS/DF is derived by transforming the binary tree search structure into trellis search structure implying that FDTrS/DF performs better than the singnal detection techniques based on tree search structure such as FDTS/DF and SSD/DF. Advantages of FDTrS/DF are significant reductions in hardware complexity due to the unique structure of FDTrS composed of only one trellis stage requiring no traceback procedure usually implemented in the Viterbi detector. Also in this paper the PDFS/DF and SSD/DF orginally proposed for high-density magnetic recording systems are modified for the DVD system and compared with the proposed FDTrS/DF. In order to increase speed in the FPGA implementation the pipelining technique and absolute branch metric (instead of square branch metric) are applied. The proposed FDTrS/DF is shown to provide the best performance among various signal detection techniques such as PRML, DFE, FDTS/DF and SSD/DF even with a small hardware complexity.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.3
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• pp.254-258
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• 2000

Current leads of high $T_{c}$ superconductor were fabricated with Bi excess B $i_{2.2}$/S $r_{1.8}$/C $a_{1}$/C $u_{2}$/ $O_{x}$ composition by rapid cooling method. The dimensions of final samples were fixed 3 mm and 8 mm diameter with 50 mm length each To control uniform density the samples were preformed by CIP(Cold Isostatic Press) process and followed by partial or full melting process after raising up to 90$0^{\circ}C$ for 30min. Plate shaped microstructure was clearly observed adjacent to the Ag tube wall and the size of plate was about 100$\mu$m. However the severe destruction of growth orientation was shown in the inner growth part. critical temperature ( $T_{c}$) was about 53~71K after directional growth while Tc was decreased about 77~80 K before directional growth. After directional growth critical current( $I_{c}$) and critical current density( $J_{c}$) in the specimen of 8 mm diameter at 50 K were about 110 A and 280 A/c $m^2$ respectively.pectively.ely.

• Korean Journal of Materials Research
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• v.34 no.9
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• pp.432-438
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• 2024

Cu-Ti thin films were fabricated using a combinatorial sputtering system to realize highly sensitive surface acoustic wave (SAW) devices. The Cu-Ti sample library was grown with various chemical compositions and electrical resistivity, providing important information for selecting the most suitable materials for SAW devices. Considering that acoustic waves generated from piezoelectric materials are significantly affected by the resistivity and density of interdigital transducer (IDT) electrodes, three types of Cu-Ti thin films with different Cu contents were fabricated. The thickness of the Cu-Ti thin films used in the SAW-IDT electrode was fixed at 150 nm. As the Cu content of the Cu-Ti films was increased from 31.2 to 71.3 at%, the resistivity decreased from 10.5 to 5.8 × 10^-5 ohm-cm, and the density increased from 5.5 to 7.3 g/cm³, respectively. A SAW device composed of Cu-Ti IDT electrodes resonated at exactly 143 MHz without frequency shifts, but the full width at half maximum (FWHM) values of the resonant frequency gradually increased as the Cu content increased. This means that although the increase in Cu content in the Cu-Ti thin film helps to improve the electrical properties of the IDT electrode, the increased density of the IDT electrode deteriorates the acoustic performance of SAW devices.

• Journal of Sensor Science and Technology
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• v.33 no.5
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• pp.353-358
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• 2024

Al-Ni thin films were fabricated using combinatorial sputtering system to realize highly sensitive surface acoustic wave (SAW) devices. The Al-Ni sample library was grown with various chemical compositions and electrical resistivities, which provided important information for selecting the most suitable materials for SAW devices. As acoustic waves generated from piezoelectric materials are significantly affected by the resistivity and density of the interdigital transducer (IDT) electrodes, three types of Al-Ni thin films with different Al contents were fabricated. The thickness of the Al-Ni thin film used in the SAW-IDT electrode was fixed at 100 nm. As the Al content of the Al-Ni film decreased from 79.2 to 24.5 at%, the resistivity increased slightly from 4.8 to 5.8 × 10^-5 Ω-cm, whereas the calculated density increased significantly from 3.6 to 6.9 g/cm³. The SAW device composed of Al-Ni IDT electrodes resonated at 71 MHz without frequency shifts; however, the selectivity of the resonant frequency and insertion loss deteriorated as the Al content decreased. When there is no significant difference in the electrical characteristics of the SAW-IDT electrodes, the performance of the SAW devices can be determined by the density of the IDT electrodes.