• Journal of the Korean Vacuum Society
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• v.12 no.S1
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• pp.46-48
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• 2003

The modification of metal surface by ion implantation with MEVVA ion implanter and thin film deposition with filtered vacuum arc plasma device is introduced in this paper. The combination of ion implantation and thin film deposition is proved as a better method to improve properties of metal surface.

• 연구논문집
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• s.30
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• pp.147-157
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• 2000

The filtered vacuum arc source (FVAS), which is adopted by magnetic filtering methode to remove the macro-particle in vacuum arc plasma, was composed of a torus structure with bending angle of 60 degree. The radius of torus was 266 mm, the radius of plasma duct was 80 mm and the total length was 600 mm. The magnet parts were consisted of one permanent magnet, one magnetic yoke and five solenoid magnets. The plasma duct was electrically isolated from the ground so that a bias voltage could be applied. The baffles inside plasma duct were installed in order to prevent the recoil effect of macro-particles. Graphite was used as the cathode material to coat the amorphic diamond film and its diameter was 80 mm. The amorphic diamond film attracts much attention due to its excellent mechanical, optical and tribological properties suitable for wide range of applications. The effects of solenoid magnet in plasma extraction were studied by computer simulation and experiment using Taguchi's method. The source and extraction magnet affected the arc stabilization. The extraction beam current was maximized with low value of the source magnet current and high value of the filtering magnet current. Optimum deposition condition was obtained when the currents of arc discharge, source, extraction, bending, deflection and outlet magnet were 30 A, 1 A, 3 A, 5 A, and 5 A, respectively.

• Journal of Korean Vacuum Science & Technology
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• v.6 no.2
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• pp.55-57
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• 2002

Metal-vapor-vacuum-arc ion source is an ideal source for both high current metal ion implanter and high current plasma thin-film deposition systems. It uses the direct evaporation of metal from surface of cathode by vacuum arc to produce a very high flux of ion plasmas. The MEVVA ion source, the high-current metal-ion implanter and high-current magnetic-field-filtered plasma thin-film deposition systems developed in Beijing Normal University are introduced in this paper.

• Proceedings of the KIEE Conference
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• 1997.07d
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• pp.1379-1382
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• 1997

Diamond-like carbon(DLC) thin films are produced by using a filtered cathodic vacuum arc(FCVA) deposition system. Different magnetic components, namely steering, focusing, and filtering plasma-optic systems, are used to achieve a stable arc plasma and to prevent the macroparticles from incorporating into the deposited films. Effects of magnetic fields on plasma behavior and film deposition are examined. The carbon ion energy is found to be varied by applying a negative (accelerating) substrate bias voltage. The deposition rate of DLC films is dependent upon magnetic field as well as substrate bias voltage and at a nominal deposition condition is about $2{\AA}/s$. The structural properties of DLC films, such as internal stress, relative fraction of tetrahedral($sp^3$) bonds, and surface roughness have also been characterized as a function of substrate bias voltages and partial gas($N_2$) pressures.

• Proceedings of the KIEE Conference
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• 1997.07d
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• pp.1383-1386
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• 1997

Dimond-like carbon(DLC) films have been deposited by using both rf plasma-enhanced chemical vapor deposition (PECVD) and filtered cathodic vacuum arc (FCVA) deposition systems. Effects of deposition conditions, such as dc self-bias, $CH_4$ gas pressure, substrate bias, and $N_2$ partial pressure, on the structural and electrical properties of DLC films are examined. The experimental results obtained have also been discussed by considering a theoretical model for film growth.

• Proceedings of the KIEE Conference
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• 1997.11a
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• pp.683-687
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• 1997

The purpose of this work is to develop a highly reliable solar cell based on the diamond-like carbon(DLC)/silicon heterojunction. Thin films of DLC have been deposited by employing both filtered cathodic vacuum arc(FCVA) and magnetron plasma-enhanced chemical vapor deposition(m-PECVD) systems. Structural, electrical, and optical properties of DLC films deposited are systematically analyzed as a function of deposition conditions, such as magnetic field, substrate bias voltage, gas pressure, and nitrogen content. The I-V measurement has been used to elucidate the mechanism responsible for the conduction process in the DLC/Si junction. Photoresponse characteristics of the junction are measured and its reliability against temperature and light stresses is also analyzed.

• Journal of the Korean Vacuum Society
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• v.10 no.4
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• pp.431-439
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• 2001

In this paper, the a-Diamond films were synthesized using filtered vacuum arc source (FVAS), FVAS was composed of a torus structure with bending angle of 60 degree. The radius of torus was 266 mm, the radius of plasma duct was 80 mm and the total length was 600 mm. The magnet parts were composed of one permanent magnet and five solenoid magnets. The plasma duct was electrically isolated from the ground so that a bias voltage could be applied. The baffles inside plasma duct were installed in order to prevent the recoil effect of macro-particles. Cathode was made of graphite with 80 mm in diameter. The effects of solenoid magnet on plasma extraction were investigated by computer simulation and experiment using Taguchi's methode. The source and extraction magnet affected the arc stabilization. The extraction beam current was maximized with low value of the source magnet current and high value of the filtering magnet current. The beam current density was 3.2 mA/$\textrm{cm}^2$ and average deposition rate was 5 $\AA$/sec when the currents of arc discharge, source, extraction, bending, deflection and outlet magnet were 30 A, 1 A, 3 A, 5 A, 5 A, and 5 A, respectively. The beam current density and the efficiency of beam transportation were increased with the positive bias voltage of the plasma duct.

• Tribology and Lubricants
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• v.32 no.4
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• pp.125-131
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• 2016

In recent years, thick ta-C coating has attracted considerable interest owing to its existing and potential commercial importance in applications such as automobile accessories, drills, and gears. The thickness of the ta-C coating is an important parameter in these applications. However, the biggest problems are achieving efficient coating and uniformity over a large area with high-speed deposition. Feasibility is confirmed for the ta-C coating thickness of up to 9.0 µm (coating speed: 3.0 µm/h, fixed substrate) using a single FCVA cathode. The thickness was determined using multiple coating cycles that were controlled using substrate temperature and residual stresses. In the present research, we have designed a coating system using FCVA plasma and produced enhanced thick ta-C coating. The system uses a specialized magnetic field configuration with stabilized DC arc plasma discharge during deposition. To achieve quality that is acceptable for use in automobile accessories, the magnetic field, T-type filters, and 10 pieces of a multi-cathode are used to demonstrate the deposition of the thick ta-C coating. The results of coating performance indicate that uniformity is ±7.6 , deposited area is 400 mm, and the thickness of the ta-C coating is up to 5.0 µm (coating speed: 0.3 µm/h, revolution and rotation). The hardness of the coating ranges from 30 to 59 GPa, and the adhesion strength level (HF1) ranges from 20 to 60 N, depending on the ta-C coating.