• Journal of the Korean Geographical Society
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• v.42 no.4
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• pp.526-539
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• 2007

The purpose of this study is to investigate the influence of the Korean Wave on Chinese tourism to South Korea through a behavioral analysis of Chinese tourists in the general group package tours. China suppressed the needs of the Chinese people's geographical movement and imposed restrictions on information about the outside world with the use of a policy of "closure" for a long time. But since reforms and open-door policies were introduced in China, especially in the context of relaxation of control policies over Chinese outbound tourism after the mid-1990's, more and more Chinese make trips abroad including visits to South Korea. In this situation, the recent Korean Wave(especially, drama/film) describes the Korean national image by forming a bridge between fiction and reality and plays a pivotal role in broadening or reconstructing the geographical imagination of the Chinese people who have been historically isolated from the outside world. Although Chinese have imagined the Korean nationscape on the basis of geopolitical or economic factors in the past, they have currently broadened or reconstructed their geographical imagination to include socio-cultural factors related closely to the Korean way of life due to the recent Korean Wave. This newly constructed geographical imagination led by the Korean Wave functions as an important pulling factor in Chinese destination choices, affecting Chinese tourists' motivation formation and the recommendation of main attractions. The more influential the Korean Wave is on their destination choice, the more the respondents select the cultural factors in both their motivation for tourism to South Korea and their recommendations of tourism attractions to other people. Through the analysis results of both satisfaction and intention to revisit, the more influential the Korean Wave is on their destination choice, the higher is the degree of both satisfaction and intention to revisit. In other words, although Chinese tourism to South Korea is chiefly in the general group package tours, Chinese tourists who are influenced by Korean Wave on their destination choice have more attachment to(or affection for) Korea as a tourism destination. This result suggests that the Korean Wave affects qualitative change - that is, change of attitude - as well as quantitative change in Chinese demand for tourism to South Korea.

• Journal of Sensor Science and Technology
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• v.11 no.1
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• pp.9-17
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• 2002

The forming conditions of X-ray storage phosrhors $BaFBr_{1-x}I_x:Eu^{2+}$, $Na^+$ have been investigated, and measured the PSL emission spectra and its intensity, fading characteristics and does dependence of the prepared phosphors. These characteristics were compared with those of commercial image plate (ST-III) obtained from Fuji Photo Film Co. The optimal preparing conditions of $BaFBr_{1-x}I_x:Eu^{2+}$, $Na^+$ Phosphor were 0.5 mol% of $EuF_3$, 4.0 mol% of NaF and composition ratio x=0.3, and the sintering temperature were $950^{\circ}C$ in $H_2$ atmosphere. When the composition ratio x was equal to 0, the spectral range of the luminescence of $BaFBr_{1-x}I_x:Eu^{2+}$, $Na^+$ phosphor was $365{\sim}420\;nm$, and its maximum luminescence intensity appeared at 390 nm. When composition ratio x was not equal to 0, the wavelength ranges and peak of the spectra were shifted to the longer wavelength with the growth of composition ratio x. A good linearity was shown between the PSL intensity and X-ray irradiation dose. The phosphor sample with x=0.3 exhibited better fading characteristics than that of other $BaFBr_{1-x}I_x:Eu^{2+}$ phosphor samples, and the fading characteristics of the PSL intensity at room temperature were shown poorer with increasing $I^-$ ion concentration. The lattice constant of the phosphor becomes larger with increasing the $I^-$ ion concentration.

• Clean Technology
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• v.29 no.4
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• pp.255-261
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• 2023

Power semiconductors are semiconductors used for power conversion, transformation, distribution, and control. Recently, the global demand for high-voltage power semiconductors is increasing across various industrial fields, and optimization research on high-voltage IGBT components is urgently needed in these industries. For high-voltage IGBT development, setting the resistance value of the wafer and optimizing key unit processes are major variables in the electrical characteristics of the finished chip. Furthermore, the securing process and optimization of the technology to support high breakdown voltage is also important. Etching is a process of transferring the pattern of the mask circuit in the photolithography process to the wafer and removing unnecessary parts at the bottom of the photoresist film. Ion implantation is a process of injecting impurities along with thermal diffusion technology into the wafer substrate during the semiconductor manufacturing process. This process helps achieve a certain conductivity. In this study, dry etching and wet etching were controlled during field ring etching, which is an important process for forming a ring structure that supports the 3.3 kV breakdown voltage of IGBT, in order to analyze four conditions and form a stable body junction depth to secure the breakdown voltage. The field ring ion implantation process was optimized based on the TEG design by dividing it into four conditions. The wet etching 1-step method was advantageous in terms of process and work efficiency, and the ring pattern ion implantation conditions showed a doping concentration of 9.0E13 and an energy of 120 keV. The p-ion implantation conditions were optimized at a doping concentration of 6.5E13 and an energy of 80 keV, and the p+ ion implantation conditions were optimized at a doping concentration of 3.0E15 and an energy of 160 keV.