• 한국태양에너지학회:학술대회논문집
• /
• 2008.11a
• /
• pp.75-80
• /
• 2008

Recently, Energy savings in buildings has received much attention in response to the increased needs for global warming and better comforts of the occupants in apartment housing. This study proposes the method which uses the sun control window film to reduce the cooling load and heating load improving the thermal performance of the building and it improves an energy efficiency. The film which used in actual measurement has a low shading coefficient and a solar energy transmission. so we measured the surface temperature of the triple Low-e glazing system used and inside temperature according to the change of outside temperature and solar energy to study thermal performance evaluation. As a result, it was helpful to use window film insulation to reduce inside temperature in summer and to keep room warm in winter.

• 한국정보디스플레이학회:학술대회논문집
• /
• 2006.08a
• /
• pp.1107-1110
• /
• 2006

We investigate the effect of processing temperature of gate insulator and optical anisotropy on organic thin-film transistors (OTFTs). The insulator film which was processed lower temperature than solvent boiling temperature can lead more aligned pentacne molecules compare to higher processed insulator film. It finally gives rise to the big increase of carrier mobility in OTFTs, although there are little difference at the seriously affecting properties to device performance, for example roughness of gate insulator film.

• Journal of the Korean Magnetics Society
• /
• v.16 no.1
• /
• pp.98-101
• /
• 2006

Electron transport properties of nanostructured Pb thin film, consisting of grains, have been studied. Nanostructured thin films were fabricated on a substrate held at low temperature and their thicknesses were less than 10nm. While temperature of the film increased from 1.3 K to room temperature, the change in normal state sheet resistance has been measured. As the annealing temperature varies, the normal state sheet resistance shows a non-monotonic and irreversible change. Such behavior can be understood with the Pb grain growth due to annealing of the film.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.16 no.9
• /
• pp.790-794
• /
• 2003

This paper describes the fabrication and characteristics of ceramic thin film type pressure sensors based on Ta-N strain gauges for high temperature applications. Ta-N thin-film strain gauges are deposited onto a thermally oxidized Si diaphragm by RF sputtering in an argon-nitrogen atmos[here($N_2$ gas ratio: 8%, annealing condition: 90$0^{\circ}C$, 1 hr.), patterned on a wheatstone bridge configuration, and used as pressure sensing elements with a high stability and a high gauge factor. The sensitivity is 1.097 ～ 1.21 mV/Vㆍkgf/$\textrm{cm}^2$ in the temperature range of 25 ～ 200 $^{\circ}C$ and the maximum non-linearity resistance), non-linearity than existing Si piezoresistive pressure sensors. The fabricated ceramic thin-film type pressure sensor is expected to be usefully applied as pressure and load sensors that os operable under high-temperature.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.11 no.11
• /
• pp.1007-1013
• /
• 1998

In this paper, the dielectric properties of fabricated Polyvinylidene fluoride(PVDF, $PVF_2$) thin film with substrate temperature from 30 to at vapor deposition. The dielectric properties of PVDF thin film had been studied in the frequency range from 10Hz to 4MHz at measuring temperature between 20 and $100^{/circ}C$. The anomalous increasing in dielectric constant and dielectric loss at low frequencies and high temperature was described for PVDF thin film containing ion impurities. In particularly, ion mobility of fabricated PVDF thin film at substrate temperature at $30^{/circ}C$ decrease from $2\times10^{-5}\;to\;3.07$\times10^{-7}cm^2/V.s$ On the other hand, ion density increase abruptly from 1.49\times$$10^{13}$ to $1.5\times$10^{16}$cm^{-3}$ In spite of decreasing of ion mobility, dielectric constants and dielectric loss for PVDF thin film increase rapidly with decreasing frequency and high temperature. It was concluded that the dielectric constants and dielectric loss was related to ion density than to ion mobility at low frequency and high temperatures.

• 한국신재생에너지학회:학술대회논문집
• /
• 2009.11a
• /
• pp.378-380
• /
• 2009

$MgF_2$ is a current material for the optical applications in the UV and deep UV range. Process variables for manufacturing the $MgF_2$ thin film were established in order to clarify optimum conditions for growth of the thin film depending upon process conditions, and then by changing a number of vapor deposition conditions and substrate temperature, Annealing conditions variously, structural and Optical characteristics were measured. Thereby, optimum process variables were derived. Nevertheless, modern applications still require improvement of the optical and structural quality of the deposited layers. In the present work, the composition and microstructure of $MgF_2$ single layers grown on slide glass substrate by Electro beam Evaporator(KV-660) processes, were analyzed and compared. The surface Substrate temperature having an effect on the quality of the thin film was changed from $200[^{\circ}C]$ to $350[^{\circ}C]$ at intervals of $50[^{\circ}C]$. and annealing temperature an effect on the thin film was changed from $200[^{\circ}C]$ to $400[^{\circ}C]$ at intervals of $50[^{\circ}C]$. Physical properties of the thin film were investigated at various fabrication conditions substrate temperature, annealing and temperature, annealing time by XRD, FE-SEM.

• Journal of the Korean institute of surface engineering
• /
• v.17 no.3
• /
• pp.78-86
• /
• 1984

Hard anodic oxide film was investigated formed on pure aluminium with various temperature (30$^{\circ}-60^{\circ}C$), current densities (1.5-3.0A/$dm^2$) and concentrations(3-15g/l) of oxalic acid in 0.5M malic acid bath. The resulting characteristic of the anodic oxide film obtained were summarized as follows in the view point of physical and mechanical properties in relation with the above process variables. 1. The film thickness increased with oxalic acid concentration and bath temperature, while the reversed phenomena were obtained at a high concentration of oxalic acid and high temperature due to the severe dissolution of the anodic oxide film. 2. The hardness and the abrasion resistance were improved by lowering the addition of oxalic acid and the bath temperature. This feature was directly dependent on the porosity formed on the anodic oxide film. 3. The maximum hardness of anodic oxide film showed Hv 579 in the temperature of 30$^{\circ}C$ with the current density, 2.5A/$dm^2$ in the 0.5M malic acid bath mixed with 5g/l oxalic acid.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 1999.05a
• /
• pp.589-592
• /
• 1999

This paper describes direct $\mu$C-Si/CaF$_2$/glass thin film growth by RPCVD system in a low temperature for thin film transistor (TFT), photovoltaic devices. and sensor applications. Experimental factors in a low temperature direct $\mu$ c-Si film growth are presented in terms of deposition parameters: SiH$_4$/H$_2$ ratio, chamber total pressure, substrate temperature, rf power, and CaF$_2$ buffer layer. The structural and electrical properties of the deposited films were studied by means of Raman spectroscopy, I-V, L-I-V, X-ray diffraction analysis and SEM. we obtain a crystalline volume fraction of 61%, preferential growth of (111) and (220) direction, and photosensitivity of 124. We achieved the improvement of crystallinity and electrical property by using the buffer layers of CaF$_2$ film.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.13 no.6
• /
• pp.509-513
• /
• 2000

The physical and electrical characteristics of MgO and Pt thin-films on it deposited by reactive sputtering and rf magnetron sputtering respectively were analyzed with annealing temperature and time by four point probe SEM and XRD. Under annealing conditions of 100$0^{\circ}C$ and 2 hr, MgO thin-film had the properties of improving Pt adhesion to SiO$_2$and insulation without chemical reaction to Pt thin-film and the sheet resistivity and the resistivity of Pt thin-film deposited on it were 0.1288 Ω/ and 12.88 $\mu$$\Omega$.cm respectively. We made Pt resistance pattern on SiO$_2$/Si substrate by life-off method and fabricated Pt thin-film type microheater for thermal microsensors by Pt-wire Pt-paste and SOG(spin-on-glass). In the temperature range of 25~40$0^{\circ}C$ we estimated TCR(temperature coefficient of resistance) and resistance ratio of thin-film type Pt-RTD(resistance thermometer device). We obtained TCR value of 3927 ppm/$^{\circ}C$ close to the bulk Pt value. Resistance values were varied linearly within the range of the measurement temperature. The thermal characteristics of fabricated thin-films type Pt micorheater were analyzed with Pt-RTD integrated on the same substrate. The heating temperature of Pt microheater could be up to 40$0^{\circ}C$ with 1.5 watts of the heating power.

• Journal of the Semiconductor & Display Technology
• /
• v.10 no.3
• /
• pp.67-74
• /
• 2011

In this study, we have investigated the effect of the substrate temperature on the structural and the electrical characteristics of IZO thin films for the OLED (organic light emitting diodes) devices. For this purpose, IZO thin films were deposited by RF magnetron sputtering under various substrate temperature. The substrate temperature has been changed from room temperature to $400^{\circ}C$. Samples which were deposited under $250^{\circ}C$ show amorphous structure. The electrical resistivity of crystalline-IZO (c-IZO) film was higher than that of amorphous-IZO (a-IZO) film. And the electrical resistivity showed minimum value near $150^{\circ}C$ of deposition temperature. The OLED device was fabricated with different IZO substrates made by configuration of IZO/$\acute{a}$-NPD/DPVB/$Alq_3$/LiF/Al to elucidate the performance of IZO substrate. OLED devices with the amorphous-IZO (a-IZO) anode film show better current density-voltage-luminance characteristics than that of OLED devices with the commercial crystalline-ITO (c-ITO) anode film. It can be explained that very flat surface roughness and high work function of a-IZO anode film lead to more efficient hole injection by reduction of interface barrier height between anode and organic layers. This suggests that a-IZO film is a promising anode materials substituting conventional c-ITO anode in OLED devices.