• 한국결정성장학회지
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• 제18권2호
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• pp.72-75
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• 2008

Zinc oxide (ZnO) thin films were prepared by a sol-gel method. The structural and electrical properties were investigated by varying drying and annealing temperatures. The thin films were coated (250 nm) by spin-coating method on glass substrates. The optimum drying temperature of ZnO thin films was 300$^{\circ}C$ where the resistivity was the lowest and the preferred c-axis orientation was the highest. The annealing was carried out in air and inert atmospheric conditions. The degree of the preferred c-axis orientation was estimated. The highest preferred c-axis orientation was recorded at 600$^{\circ}C$. The preferred c-axis orientation and grain growth resulted in the mobility enhancement of the ZnO thin films, and the lowest resistivity was 0.62${\Omega}{\cdot}cm$ at 600$^{\circ}C$.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.114.2-114.2
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• 2014

The orientation of the constituent molecules in organic thin film devices can affect significantly their performance due to the highly anisotropic nature of ${\pi}$-conjugated molecules. We report here an angle dependent x-ray absorption study of the control of such molecular orientation using well-ordered interlayers for the case of a bilayer heterojunction of chloroaluminum phthalocyanine (ClAlPc) and C60. Furthermore, the orientation-dependent energy level alignment of the same bilayer heterojunction has been measured in detail using synchrotron radiation-excited photoelectron spectroscopy. Regardless of the orientation of the organic interlayer, we find that the subsequent ClAlPc tilt angle improves the ${\pi}-{\pi}$ interaction at the interface, thus leading to an improved short-circuit current in photovoltaic devices based on ClAlPc/C60. The use of the interlayers does not change the effective band gap at the ClAlPc/C60 heterointerface, resulting in no change in open-circuit voltage.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.2
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• pp.916-919
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• 2004

This paper studied about the (100) orientation of PZT thin films coated on the LNO electrode using a different thermal annealing. The thermal annealing method is divided into two things. The one is the method transferring heat to only the lower substrate and another is transferring heat to all directions. Orientation factor of PZT in the method of transferring heat to only the lower substrate was F=99% in the thermal annealing of the LNO. Orientation factor of PZT was F=67% in the method of transferring heat to all directions.

• 한국재료학회:학술대회논문집
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• 한국재료학회 1997년도 한국재료학회 추계학술발표회
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• pp.30-30
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• 1997

• E2M - 전기 전자와 첨단 소재
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• 제8권1호
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• pp.6-12
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• 1995

High Tc superconducting YBa$_{2}$Cu$_{3}$$O_{7-x}$ thin films were prepared on various substrates by off-axis rf magnetron sputtering method to examine the substrate effects on the film structure and its R-T characteristics. The SEM analysis showed that the surface morphology of the grown YBa$_{2}$Cu$_{3}$O.sub 7-x/, film has different characteristic structure with different substrate used. The film on (100) SrTiO$_{3}$ substrate has critical current density of 3*10$^{5}$ A/cm$^{2}$ at 77K under zero magnetic field. The X-ray diffraction measurements revealed that the films on (100) SrTiO$_{3}$ substrate have mixed a-axis and c-axis normal to the substrate surface and the films on (100) MgO and ZrO$_{2}$/sapphire substrates have c-axis normal orientation to the substrate surface. However, YBa$_{2}$Cu$_{3}$$O_{7-x}$ films on (100) sapphire substrates showed no preferential orientation.ion.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 하계학술대회 논문집
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• pp.50-53
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• 2002

YMnO$_3$ thin films were spun-coated on the Pt/Ti/SiO$_2$/Si substrates by sol-gel process using alkoxides, and then dried on hot plates from 300 to 450 $^{\circ}C$. The prepared YMnO$_3$ thin films were annealed at 850 $^{\circ}C$ in O$_2$ atmosphere for 1 h. The crystallization of YMnO$_3$ thin films were improved to preferred c-axis orientation and the dielectric characteristics were progressed by increasing the drying temperature. The range of dielectric constant of thin film dried at 450 $^{\circ}C$ is 12.9-22.3 and close to that of YMnO$_3$ single crystal. The ferroelecrtic property of YMnO$_3$ thin film was observed on the YMnO$_3$ films. The maximum remnant polarization (2Pr) of YMnO$_3$ thin films dried at 450 $^{\circ}C$ was about 2.91 ${\mu}$ C/cm2. It was suggested that the drying temperature affect to the initial stage of thin film growth of preferred c-axis orientation.

• 한국세라믹학회지
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• 제34권4호
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• pp.373-379
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• 1997

A study on the deposition and characterization of BaTiO3 thin films on MgO-buffered Si(100) substrates by sputtering was conducted. The MgO buffer layers were investigated as a function of deposition temperature. At lower substrate temperature, the MgO layers were not fully crystalline, but a crystallized MgO layer with (001) preferred orientation was obtained at the substrate temperature of $700^{\circ}C$. Partially (00ι) or (h00) textured BaTiO3 films were obtained on Si(100) with the MgO buffer layer grown at 700ι. While, randomly oriented BaTiO3 films with large-scale cracks on the surface were made without the MgO layer. The crystallographic orientation, morphology and electrical properties between the BaTiO3 films on Si with and without the MgO layer were compared using the BaTiO3 film on MgO(100) single crystal substrate as a reference system. Also the favorable role of the MgO layer as a buffer for growing of oriented BaTiO3 films on Si substrates was confirmed.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 추계학술대회 논문집
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• pp.77-80
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• 2001

Crystallographic and magnetic characteristics of CoCr-based magnetic thin film for perpendicular magnetic recording media were influenced on preparing conditions. In these, there is that substrate temperature was parameter that increases perpendicular coercivity of CoCrTa magnetic layer using recording layer. While preparation of CoCr-based doublelayer, by optimizing substrate temperature, we expect to increase perpendicular anisotropy of CoCr magnetic layer and prepare ferromagnetic recording layer with a good quality by epitaxial growth. CoCrTa/Si doublelayer showed a good dispersion angle of c-axis orientation $\Delta$$\theta$$_{50}$ caused by inserting amorphous Si underlayer which prepared at underlayer substrate temperature 250C. Perpendicular coercivity was constant, in-plane coercivity was controlled a low value about 2000e. This result implied that Si underlayer could restrain growth of initial layer of CoCrTa thin film, which showed bad magnetic properties effectively without participating magnetization patterns of magnetic layer. In case of CoCrTa/Si that prepared with ultra thin underlayer, crystalline orientation of CoCrTa was improved rather underlayer thickness 1nm, it was expected that amorphous Si layer played a important role in not only underlayer but also seed layer.t also seed layer.r.

• 한국세라믹학회지
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• 제35권2호
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• pp.145-150
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• 1998

ZnGa2O4 thin film phosphors were deposited on Si(100) (111) wafers by rf magnetron sputtering. The ef-fects of substrates and deposition parameters on the growing mechanisms were studied. As a results of the effect of substrate temperature tranistions of growth orientation and different growing behaviors were ob-served. Also polycrystalline ZnGa2O4 thin film could not be achieved without oxygen gas. PL spectrum of ZnGa2O4 thin films were analyzed and showed broad band luminescence spectrum.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1995년도 추계학술대회 논문집 학회본부
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• pp.329-331
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• 1995

Laser ablation was used to fabricate superconducting $YBa_2Cu_3O_{7-x}$ (YBCO) thin films on metallic substrates with an YSZ buffer layer. An ArF excimer laser with an wavelength of 193 nm was used to deposit both YSZ buffer layer and superconducting thin film. The characterizations of thin films were performed and compared. With a 200 nm YSZ buffer layer, c-axis orientation and $T_c$=85 K were obtained for a 200 nm-thick YBCO film.