• Proceedings of the IEEK Conference
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• 2003.07b
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• pp.1049-1052
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• 2003

This study shows the change of the structural characteristic of AIN thin film deposition with the change of the deposition conditions such as Ar/$N_2$ gas ratio, operating pressure in chamber, and the distance between substrate and target in RF Magnetron Sputtering. The orientation and surface roughness of AIN thin film are studied by using XRD and AFM and the thickness is measured by using STYLUS PROFILER. While we can not identify the orientation of the thin film deposited in Ar only, we can obtain the (100) orientation of the thin film with the addition of $N_2$ to Ar. Especially the thin film deposited at 10% of Ar/$N_2$ gas ratio appears to be the most (100) oriented. The (100) orientation of thin film becomes weaker as the operating pressure becomes higher. The further distance between substrate and target is stronger the (100) orientation of the thin film is. The (100) orientation becomes weaker and (002) orientation starts to appear as the distance is shorter.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.10
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• pp.1023-1028
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• 2004

We fabricated AIN thin film by using RF magnetron sputtering and studied the structural characteristic of AIN thin film with the change of the deposition conditions such as Ar/$N_2$ flow ratio, working pressure, and the distance between substrate and target. The orientation and surface roughness of AIN thin film were studied by using XRD and AFM. We can not identify the orientation of the thin film deposited in Ar, while we obtained the (l00) orientation of the thin film with the addition of $N_2$. Especially, the thin film deposited at 18/2 (seem) of Ar/$N_2$ flow ratio exhibited to be the most (100) oriented. The (100) orientation of thin film becomes weaker as the working pressure becomes higher. The further distance between substrate and target is stronger the (100) orientation of the thin film, but the (100) orientation becomes weaker and (002) orientation started to appear as the distance is shorter. The surface roughness of the thin film deposited at 50$0^{\circ}C$ in Ar only is 1.1 nm, while very smooth thin film of 0.4～0.6 nm is obtained with the addition of $N_2$.

• Corrosion Science and Technology
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• v.3 no.4
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• pp.172-177
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• 2004

Biaxially oriented polyethylene terephthalate copolymer(BO - PET)film laminated aluminiums have been applied for chip condenser case. The BO PET film is characterized by high molecular which gives high corrosion resistance, good adhesion and high heat resistance. The higher orientation lowers formability of the film. So, optimum orientation has to be controlled during the laminating process. And to confirm the adhesion between BO PET and aluminium and to guarantee the formability of PET laminated aluminums, we have controlled the chromium oxides weight on the aluminium and laminating condition ( laminating temperature, soaking temperature and lag time after nip roll and quenching conditions) This paper discusses the effect of the laminating conditions on the formability of laminated aluminums. As results, it is clear that the orientation of the BO PET film decreased with an increase in the strip temperature. When the film temperature is over the melting point of the film, its orientation drastically decreased.

• Radiation Oncology Journal
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• v.22 no.1
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• pp.69-75
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• 2004

Purpose : A new fiduciary plate and orientation marker have been devised to assist the quality assurance (QA) procedures for port films in radiation therapy department. The plate is used in conjunction with the film/cassette combination during weekly QA procedures, at Seoul National University Hospital (SNUH), in order to verify treatment fields in high radiation therapy. Materials and Methods : A new fiduciary plate was fabricated using an acrylic plate, cerrobend, standard blocking tray and mercury. The acrylic plate had the dimension of $1{\times}25{\times}25$ cm, with two fiduciary markers. The plate was rigidly attached onto the standard blocking tray, thus making it easier to set the fiduciary plate to the center on the radiation field on the linear accelerator. The plate had two 2-mm vertical and horizontal lines, with the minor scales in 2-cm steps. The orientation marker was a small mercury filled disk, which was inserted into the plate. Results : The geometrical structure of the lines in the plate makes it easier to correlate two different images between the simulation and port films. The marker clearly indicated the orientation of the film, for example, the anterior, posterior, left, right and various oblique orientations, without the placement of a conventional orientation marker. Also, the new orientation marker could easily be applied to the simulator by placing the small orientation marker onto the image intensifier or in front of the film/cassette holder. Conclusions : The new fiduciary plate appears to be useful in verifying the treatment fields, and the new orientation marker makes the film orientation simple, which is expected to lower the block fabrication errors.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.8
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• pp.716-722
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• 2003

ZnO thin films were deposited on Al and Pt electrodes by an RF reactive sputtering system for the fabrication of FBAR (film bulk acoustic wave resonator), and the effect of thermal treatment temperature on their c-axis preferred orientation was investigated. SEM experiments show that columnar structure of ZnO thin films were grown with c-axis normal to electrode material, and XRD experiments show that both ZnO films were grown with (002) plane preferred orientation, but larger diffraction peak was observed with Pt electrode. The peak intensity increased with higher thermal treatment temperature, but c-axis preferred orientation was diminished. The surface roughness of Al thin film was higher than that of Pt, and these affect the surface roughness of ZnO film deposited on the electrode. Though the preferred orientation with respect to Pt(111) plane was improved with higher thermal treatment temperature, this could not improve the c-axis orientation of ZnO film.

• Journal of the Korean Magnetics Society
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• v.7 no.6
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• pp.314-320
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• 1997

We have observed the orientation behavior of acicular iron oxides in magnetic layer of the particular magnetic tape after magnetic paint was coated on polyester film. As results of the static orientation, orientation of iron oxides come to the maximum at the front and the back of orientation magnets, but it was a litter lower at the back than at the front, and it slowly decreases and come to the constant level after passing through the orientation magnets. In case of edge portion to be futher away from center in the coated film, the orientation of iron oxides in magnetic layer come to worse than that of the center. We think it is owing to the shape and the magnetic magnitude of orientation magnets. The results of the dynamic orientation are as follows. As the orientation of iron oxides in the particulated magnetic tape is higher, the output properties of tape come to better than ever. And the orientation of iron oxides can be changed by drying condition, as result, the output properties of tape can be also. Therefore we think the considrations of the design of orientation magnets and the control of drying condition are needed to improve output properties of the particulated magnetic tape.

• Journal of the Korean Ceramic Society
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• v.32 no.8
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• pp.950-956
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• 1995

Y2O3 thin films were deposited by reactive sputtering of Y target in Ar and O2 gas mixture. Residual stress was measrued by sin2$\psi$ method of x-ray diffraction (XRD) and growth orientation was examined by measuring the relative intensity of (400) plane and (222) plane of Y2O3 films. In the case that Y2O3 films were deposited at 40$0^{\circ}C$ and at low working pressure below 0.05 torr the film had large compressive stress and (111) plane orientation. At working pressure of about 0.10 torr the film had small compressive stress and (100) orientation. Above working pressure of 0.20 torr, the films had nearly zero stress and random orientation. In the case that the (111) oriented film deposited at low working pressure below 0.05 torr, as substrate temperature decreased, (111) orientation increased. In the case the film, with (100) orientation, deposited at working pressure of about 0.10 torr, (100) orientation increased with decresing substrate temperature. These relationship of residual stress and growth orientation can be explained by the relationship of surface energy and strain energy.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.395-398
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• 2000

Reactive radio frequency (RF)magnetron sputter with incident angle has been used to deposit AlN thin film on a crystalline Si substrate. (002)Preferred orientation of AlN thin film has been obtained at low sputtering pressure. Also it has been shown that depostion rate of AIN thin film is affected by fraction Ar and $N_2$ partial pressure. But substrate temperature didn't affect depostion rate of AIN thin film . As sputtering pressure increased preferred orientation degraded. The internal stress changed from tensile stress to compressive stress as fraction of $N_2$ partial pressure increased. At low nitrogen partial pressure cermet$^{[1]}$ AIN thin film is obtained.

• The Korean Journal of Ceramics
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• v.6 no.2
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• pp.116-119
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• 2000

The a-axis and c-axis prefer oriented SBT thin films could be deposited on Pt(111)/Ti/$SiO_2$$650^{\circ}C$). The c-axis preferred orientation of SBT film can be obtained by Sr deficiency and high compressive stress. However, the a-axis-oriented grains can be formed under stoichiometric Sr content and nearly stress-free state.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.05a
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• pp.685-687
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• 1999

We prepared ZnO thin film with Facing Targets Sputtering system that can deposit thin film in plasma-free situation and change the deposition condition in wide range. And prepared thin films c-axis orientation and grain size were analyzed by XRD(x-ray dffractometer). In the results, we suggest that FTS system is very suitable to preparing high quality ZnO thin film with good c-axis orientation.