• JSTS:Journal of Semiconductor Technology and Science
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• 제1권1호
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• pp.40-49
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• 2001

We have developed a repeatable process of forming uniform, small-size and high-density self-assembled Si nano-crystals. The Si nano-crystals were fabricated in a conventional LPCVD (low pressure chemical vapor deposition) reactor at $620^{\circ}c$ for 15 sec. The nano-crystals were spherical shaped with about 4.5 nm in diameter and density of $5{\times}l0^{11}/$\textrm{cm}^2$. More uniform dots were fabricated on nitride film than on oxide film. To take advantage of the above-mentioned characteristics of nitride film while keeping the high interface quality between the tunneling dielectrics and the Si substrate, nitride-oxide tunneling dielectrics is proposed in n-channel device. For the first time, the single electron effect at room temperature, which shows a saturation of threshold voltage in a range of gate voltages with a periodicity of ${\Delta}Ｖ_{GS}\;{\approx}\;1.7{\;}V$, corresponding to single and multiple electron storage is reported. The feasibility of p-channel nano-crystal memory with thin oxide in direct tunneling regime is demonstrated. The programming mechanisms of p-channel nano-crystal memory were investigated by charge separation technique. For small gate programming voltage, hole tunneling component from inversion layer is dominant. However, valence band electron tunneling component from the valence band in the nano-crystal becomes dominant for large gate voltage. Finally, the comparison of retention between programmed holes and electrons shows that holes have longer retention time.

• International Journal of Fluid Machinery and Systems
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• 제5권2호
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• pp.72-90
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• 2012

A computational study is reported on flow and heat transfer characteristics from five rows of circular air jets impinging on a concave surface with four rows of effusion holes. The effects of exit configurations of spent air and the arrangement of jet orifices and effusion holes for a jet Reynolds number of 7500 is investigated. In all, eight cases are studied and a good qualitative correlation is found among their flow patterns, pressure variations and heat transfer distributions.

• International Journal of Precision Engineering and Manufacturing
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• 제7권4호
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• pp.18-22
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• 2006

Although many efforts have been made in making nanometer-sized holes, there is still a major challenge in fabricating individual single-digit nanometer holes in a more controllable way for different materials, size distribution and hole shapes. In this paper we describe our efforts to use a top down approach in nanofabrication method to make single-digit nanoholes. There are three major steps towards the fabrication of a single-digit nanohole. 1) Preparing the freestanding thin film by epitaxial deposition and electrochemical etching. 2) Making sub-micro holes ($0.2{\mu}\;to\;0.02{\mu}$) by focused ion beam (FIB), electron beam (EB), atomic force microscope (AFM), and others methods. 3) Reducing the hole size to less than 10 nm by epitaxial deposition, FIB or EB induced deposition and micro coating. Preliminary work has been done on thin films (30 nm in thickness) preparation, sub-micron hole fabrication, and E-beam induced deposition. The results are very promising.

• Current Optics and Photonics
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• 제3권6호
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• pp.541-547
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• 2019

A novel photonic crystal fiber (PCF) sensor with three D-shaped holes based on surface plasmon resonance (SPR) is analyzed in this paper. Three D-shaped holes are filled with the analyte, and the gold film is deposited on the side of three planes. The design of D-shaped holes with outward expansion can effectively solve the uniformity problem of metallized nano-coating, it is beneficial to the filling of the analyte and is convenient for real-time measurement of the analyte. Compared with the hexagonal lattice structure, the triangular arrangement of the clad air holes can significantly reduce the transmission loss of light and improve the sensitivity of the sensor. The influences of the air hole diameter, the distance between D-shaped holes and core, and the counterclockwise rotation angle of D-shaped holes on sensing performance are studied. The simulation results show that the wavelength sensitivity of the designed sensor can be as high as 10100 nm/RIU and the resolution can reach 9.9 × 10^-6 RIU.

• Proceedings of the KIEE Conference
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• 대한전기학회 1993년도 하계학술대회 논문집 B
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• pp.1153-1155
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• 1993

This paper presents some experimental result of current limiting, fusing and short circuit interruption behavior by notch construction of thin copper film $35{\mu}m$ on epoxy substrate. A fuse-link having elements of copper film provided high-precision small holes by photo eatching process.

• Tribology and Lubricants
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• 제15권1호
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• pp.98-107
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• 1999

In this work the effect of pressure drop at inner film due to centrifugal forces acting on the lubricating fluid is investigated for static and dynamic characteristics of floating ring journal bearing. The momentum effect of oil supply into a inner film through oil feeding holes of floating ring on the bearing performance is also studied. It is compared the pressure drop effects and the momentum effect of oil supply into a inner film fur all bearing performance parameters. It is shown that some performance of floating ring bearings can be controled by the momentum of oil supply into a inner film.

• Journal of the Korean Crystal Growth and Crystal Technology
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• 제9권2호
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• pp.168-172
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• 1999

The 9 $\mu\textrm{m}$ GaN films on sapphire substrate were grown by Hydride vapor phase epitaxy. Dislocation density of these GaN films was measured by TEM. GaN film with crack free and mirror surface was directly grown on sapphire substrate. The dislocation density of this GaN film was $2{\times}10^9/cm^2$. The surface of GaN film on patterned GaN layer also presented a smooth mirror. But a part of GaN surface included holes because of incomplete coalescence. The dislocation density of GaN film above the mask region was lower than that in the window region. Especially, the dislocation density in the region between mask center and window region was close to dislocation free. The average dislocation density of ELO GaN was $8{\times}10^7/cm^2$.

• Journal of Biosystems Engineering
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• 제33권4호
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• pp.217-223
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• 2008

In this study, a garlic clove planter which is capable of planting holes in soil and planting a clove at the same time was designed and tested for film mulched beds. Planting characteristics of the planter were measured through field experiment. Some characteristics were analyzed with multibody dynamic simulation software. Simulation was performed on opening time of the planting hopper. Measured characteristics were position, angle, and reposition amount of garlic in sowing hole. Experiment results showed that the planted position of garlic in planting was 23.0 mm from the hole wall. The reposition amount of garlic was varied with its position and angle when the planted garlic was pressed by an angled compaction wheel. In case of type II position, the position movement of garlic was larger than type I. Average position movement of type II was 11.5 mm at $20^{\circ}$ of compaction wheel angle. These data suggest that cutting diameter of film opening must be larger than 33 mm to provide enough space for garlic sprouting. Also, simulation results showed that the maximum opening time of the planting hopper was 0.26 second.

• Journal of the Semiconductor & Display Technology
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• 제20권1호
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• pp.12-17
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• 2021

The electronic and magnetic properties for Mn-adsorbed on the chalcopyrite (CH) AlGaP2 semiconductor are investigated by using first-principles FPLMTO method. The clean CH-AlGaP2 without adsorbed Mn is a p-type semiconductor with a direct band-gap. The Mn-adsorbed CH-AlGaP2 exhibits the ferromagnetic state. It is more energetically stable than the other magnetic ones. The interstitial site on P-terminated surface is more energetically favorable one than the Al/Ga-terminated surface, or the other adsorbing sites. In the case of Mn-adsorbed Al/Ga-terminated surface, it is induced a strong coupling between Mn-3d and neighboring P-3p electrons. The holes of partially unoccupied minority Mn-3d state and majority (or minority) Al-3p or P-3p state are induced. Thus a high magnetic moment of Mn is sustained by holes-mediated double-exchange coupling. It is noticeable that the semiconducting and half-metallic characteristics of CH-AlGaP2:Mn thin film is disappeared.

• Transactions of the Korean Society of Automotive Engineers
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• 제12권4호
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• pp.36-41
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• 2004

The purpose of this paper is analyzing the oil film pressure distribution and the minimum oil film thickness for a connecting rod bearing using an A VL's EXCITE program. It is very important to understand optimized oil supplying holes and oil groove dimensions for supporting sufficiently inertia forces and gas pressures from the combustion chamber for a Diesel engine. The computed results indicate that the optimized oil groove width of a bearing and oil hole of a journal are recommended for high performance of a connecting rod bearing at the elastohydrodynamic lubrication zone. These results as design parameters are very useful data for a bearing designer as a firm reference of an automotive engine.