• 제목/요약/키워드: Film Thickness

검색결과 3,889건 처리시간 0.037초

Co-22%Cr 자성합금박막에서 박막두계에 따른 자기미세구조 변화 (The change of magnetic microstructure with Co-22%Cr film thicknesses)

  • 송오성
    • 한국표면공학회지
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    • 제31권5호
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    • pp.261-265
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    • 1998
  • We investigated compositional separation of Co-23%Cr magnetic alloy thin films with varying film thicknesses. Saturation magnetization and magnetic microstructures were investigated using vibrating sample magnetometer (VSM) and scanning probe microscope (SPM), respectively. Saturation magnetization was as 700 emu/cc for films below 50 nm-thick, and changed to 430 emu/cc for the ones above 2000 nm-thick. This may be due to increment of molar volume of Cr-enriched phase as film thickness increases. The surface grain size in AFM (atomic force microscope) measurement becomes larger as film thickness increases. The MFM (magnetic force microscope) reveals that magnetic microstructure is changed from the fine spherical domains to the maze type domains as film thickness increases. We conclude that employing thickness of Co-22%Cr films below 50 nm is favorable for high density recording in order to enhance perpendicular saturation magnetization and SNR (signal to noise ratio).

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NUMERICAL AND INTERFEROMETRIC ANALYSIS OF STARVATION EFFECT ON OIL FILM THICKNESS IN EHL CONDITION

  • Itoigawa, F.;Watanabe, K.;Nakamura, T.;Matsubara, T.
    • 한국윤활학회:학술대회논문집
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    • 한국윤활학회 2002년도 proceedings of the second asia international conference on tribology
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    • pp.77-78
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    • 2002
  • A regression formula including the inlet film thickness as the parameter for the starvation factor in EHL condition is obtained by numerical analysis with Elord‘s cavitation algorithm. In addition, an apparatus for starved film thickness measurement by use of the white light interferometry is developed in order to verify the proposed regression formula. From observation results by this apparatus, the proposed regression formula can predict the reduction of central film thickness caused by starvation in a ball-plate contact with an uncertainty up to 10%

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Dependence of Annealing Temperature on Properties of PZT Thin Film Deposited onto SGGG Substrate

  • Im, In-Ho;Chung, Kwang-Hyun;Kim, Duk-Hyun
    • Transactions on Electrical and Electronic Materials
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    • 제15권5호
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    • pp.253-256
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    • 2014
  • $Pb(Zr_{0.52}Ti_{0.48})O_3$ thin films of $1.5{\mu}m$ thickness were grown on $Pt/Ti/Gd_3Ga_5O_{12}$ substrate by RF magnetron sputtering at annealing temperatures ranging from $550^{\circ}C$ to $700^{\circ}C$. We evaluated the residual stress, by using a William-Hall plot, as a function of the annealing temperatures of PZT thin film with a constant thickness. As a result, the residual stresses of PZT thin film of $1.5{\mu}m$ thickness were changed by varying the annealing temperature. Also, we measured the hysteresis characteristic of PZT thin films of $1.5{\mu}m$ thickness to evaluate for application of an optoelectronic device.

Shadow Modeling using Z-map Algorithm for Process Simulation of OLED Evaporation

  • Lee, Eung-Ki
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2004년도 Asia Display / IMID 04
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    • pp.487-490
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    • 2004
  • In order to simulate OLED evaporation process, modeling of directional distribution of the vaporized organic materials, film thickness distribution profile and pattern-mask shadow effect are required In accordance with many literatures; all of them except shadow effect modeling are studied and developed. In this paper, modeling algorithm of evaporation shadow is presented for process simulation of full-color OLED evaporating system. In OLED evaporating process the offset position of the point cell-source against the substrate rotation axis and the usage of the patterned mask are the principal causes for evaporation shadow. For geometric simulation of shadow using z-map, the film thickness profile, which is condensed on a glass substrate, is converted to the z-map data. In practical evaporation process, the glass substrate is rotated. This physical fact is solved and modeled mathematically for z-map simulation. After simulating the evaporation process, the z-map data can present the shadow-effected film thickness profile. Z-map is an efficient method in that the cross-sectional presentations of the film thickness profile and thickness distribution evaluation are easily and rapidly achieved.

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The Thickness Dependence of Edge Effect in Thin Insulating Films

  • Song Jeong-Myen;Moon Byung-Moo;Sung Yung-Kwon
    • Transactions on Electrical and Electronic Materials
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    • 제4권4호
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    • pp.13-17
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    • 2003
  • This paper deals with the edge effect in thin insulating films, focusing on their dependence on film thickness. The finding is that the electric field is lowered at the edge as the film thickness is reduced, which, in turn, is closely related to dielectric breakdown voltage. In order to analyze this phenomenon, a simple capacitor model is introduced with which dependence of dielectric breakdown voltage around the electrode edge on the film thickness is explained. Due to analytical difficulty to get the expression of electrical field strength at the edge, an equivalent circuit approach is used to find the voltage expression first and then the electric field expression using it. The relation gets to an agreement with the experimental findings shown in the paper. This outcome may be extended to solve similar problems in multi-layer insulating films.

Si 모재 위의 $Si_xGe_{1-x}$ 박막에서 부정합 전위와 임계두께에 관한 연구 (Study on Misfit Dislocations and Critical Thickness in a $Si_xGe_{1-x}$ Epitaxial Film on a Si Substrate)

  • 신정훈;김재현;엄윤용
    • 대한기계학회:학술대회논문집
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    • 대한기계학회 2001년도 춘계학술대회논문집A
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    • pp.298-303
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    • 2001
  • The critical thickness of an epitaxial film on a substrate in electronic or optoelectronic devices is studied on the basis of equilibrium dislocation analysis. Two geometric models, a single dislocation and an array of dislocations in heteroepitaxial system, are considered respectively to calculate the misfit dislocation formation energy. The isotropic linearly elastic stress fields for the models are obtained by means of complex potential method combined with alternating technique, and are used for calculating the formation energies. As a result, the effect of elastic mismatch between film and substrate on critical thickness is presented and $Si_xGe_{1-x}/Si$ epitaxial structure is analyzed to predict the critical thickness with varying germanium concentration.

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나노인덴테이션을 이용한 나노 임프린트된 폴리머 박막의 잔류두께 측정기법 (A measurement technique for residual thickness of nano-imprinted polymer film using nano-indentation.)

  • 이학주;고순규;김재현;허신;이응숙;정준호
    • 대한기계학회:학술대회논문집
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    • 대한기계학회 2003년도 추계학술대회
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    • pp.1921-1926
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    • 2003
  • Nano-imprint technology has been vigorously studied by many researchers for it is one of the most promising technologies for manufacturing the pattern with its critical dimension below 100nm. In the nano-imprint technology, nano patterns are transferred on a polymer film and the transferred patterns are used as an etch mask to define the designed patterns on a substrate or a metal layer. To this end, it is important to keep the residual thickness of the imprinted polymer film uniform. In this study, a novel measurement technique to measure the residual thickness of films is proposed based on nanoindentation theory. This technique has advantages of saving time and measuring the residual thickness of highly-localized portions in comparison with other techniques, but has limitation of requiring calibration process.

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Fe-Hf-N 연자성 박막의 자기적 특성에 미치는 박막 두께의 영향 (The Effect of Thicknesses on Magnetic Properties of Fe-Hf-N Soft Magnetic Thin Films)

  • 최종운;강계명
    • 한국표면공학회지
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    • 제44권6호
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    • pp.255-259
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    • 2011
  • The thickness dependence of magnetic properties was experimentally investigated in nanocrystalline Fe-Hf-N thin films fabricated by a RF magnetron sputtering method. In order to investigate the thickness effect on their magnetic properties, the films are prepared with different thickness ranges from 90 nm to 330 nm. It was revealed that the coercivity of the thin film increased with film thickness. On the contrary, the saturation magnetization decreased with film thickness. On the basis of the SEM and TEM, an amorphous phase forms during initial growth stage and it changes to crystalline structure after heat treatment at $550^{\circ}C$. Nanocrystalline Fe-Hf-N particles are also generated.

Thickness Dependence of the Electrical Properties in NiCr Thin Film Resistors Annealed in a Vacuum Ambient for π - type Attenuator Applications

  • Phuong Nguyen Mai;Lee Won-Jae;Yoon Soon-Gil
    • 한국전기전자재료학회논문지
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    • 제19권8호
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    • pp.712-716
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    • 2006
  • NiCr thin films prepared on $SiO_2/Si$ substrates at room temperature by magnetron co-sputtering technique and then annealed in a vacuum ambient $(3{\times}10^{-6}\;Torr)\;at\;400^{\circ}C$. The grain size and crystallinity of the films increased with film thickness. The resistivity of the films slightly decreases as the film thickness increases, Temperature coefficient resistance (TCR) exhibits positive values irrespective of film thickness and TCR in the range of 50 to 400 nm thickness shows suitable values for the application of 10 dB in ${\pi}-type$ attenuators.

A Photochromic Dye Activation Method for Measuring the Thickness of Liquid Films

  • Kim, Jeong-Bae;Kim, Moo-Hwan
    • Bulletin of the Korean Chemical Society
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    • 제26권6호
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    • pp.966-970
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    • 2005
  • To measure the thickness of liquid films from 10 to 60 ${\mu}m$, we used photochromic dye activation. And we used silicone oil with 10 centi-Stokes and commercial photochromic dyes. To make films with exact and known thicknesses, we used two glass wafers. A film formed between two wafers after placing a drop of liquid of known volume on one wafer and covering the other. The film thickness could be estimated from the diameter of wafer and the dropped liquid volume. To quantitatively evaluate the result, captured the images using digital camera then analyzed the images using the image tool. The gray scale intensity using the captured images of activated dye with these thicknesses showed the repeatability below ${\pm}$ 1.0% when measured with a silicone oil solution containing 0.1% SO and SO-ANTH dyes. And we showed that photochromic dye activation method could be used to measure our liquid film thickness ranges.