• Korean Journal of Soil Science and Fertilizer
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• v.30 no.4
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• pp.357-360
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• 1997

To fine out the concentration of $SO_2$ gas in plastic film house, the survey was conducted at 343 sites throughout the nation. The $SO_2$ concentration in plastic film house were similar both heating and non-heating, but $SO_2$ cocentration higher than 0.8ppm was detected at those with heating. The $SO_2$ concentration in plastic film house cultivated red-pepper higher than those of cucumber or tomato cultivation, and it was produced higher amounts at day time than night due to the higher temperature. In plastic film house with heating, $SO_2$ was leaked at brocken parts of heater and joint of stove pipe, sometimes, $SO_2$ discharged from smokestack was resucked with air. $SO_2$ concentration in the plastic film house with and without ventilation were 0.2 and 0.6ppm, respectively.

• Journal of Sensor Science and Technology
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• v.1 no.2
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• pp.117-123
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• 1992

$Pt-SnO_{2-x}$ thin film sensing devices has been fabricated by thermal oxidation of stacked Pt-Sn thin film on the heater. The thickness of Sn thin film deposited by thermal evaporation was $4000{\AA}$ and the thickness of Pt deposited by D. C. sputtering on Sn thin film was $14{\sim}71{\AA}$ range. The XRD analysis show that the $Pt-SnO_{2-x}$ thin films are formed by grains with a diameter of about $200{\AA}$ randomly connected and the crystalline phase of the thin films are preferentally oriented in the (110) direction. $Pt-SnO_{2-x}$ thin film device (Pt thickness : $43{\AA}$) to 6000 ppm CO shows the sensitivity of 80% and high selectivity to CO. And the operating temperature and the thermal oxidation temperature of $Pt-SnO_{2-x}$ thin film device with high sensitivity to CO were $200^{\circ}C$ and $500^{\circ}C$, respectively.

• Journal of Sensor Science and Technology
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• v.7 no.3
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• pp.154-162
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• 1998

A planar Bi-Sb multijunction thermal converter with high thermal sensitivity and small ac-dc transfer error has been fabricated by preparing the bifilar thin film Pt-heater and the hot junctions of thin film Bi-Sb thermopile on the $Si_{3}N_{4}/SiO_{2}/Si_{3}N_{4}$-diaphragm, which functions as a thermal isolation layer, and the cold junctions on the dielectric membrane supported with the Si-substrate, which acts as a heat sink, and its ac-dc transfer characteristics were investigated with the fast reversed dc method. The respective thermal sensitivities of the converter with single bifilar heater were about 10.1 mV/mW and 14.8 mV/mW in the air and vacuum, and those of the converter with dual bifilar heater were about 5.1 mV/mW and 7.6 mV/mW, and about 5.3 mV/mW and 7.8 mV/mW in the air and vacuum for the inputs of inside and outside heaters, indicating that the thermal sensitivities in the vacuum, where there is rarely thermal loss caused by gas, are higher than those in the air. The ac-dc voltage and current transfer difference ranges of the converter with single bifilar heater were about ${\pm}1.80\;ppm$ and ${\pm}0.58\;ppm$, and those of the converter with dual bifilar heater were about ${\pm}0.63\;ppm$ and ${\pm}0.25\;ppm$, and about ${\pm}0.53\;ppm$ and ${\pm}0.27\;ppm$, respectively, for the inputs of inside and outside heaters, in the frequency range below 10 kHz and in the air.

• Korean Journal of Materials Research
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• v.24 no.10
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• pp.532-537
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• 2014

In this study, highly sensitive hydrogen micro gas sensors of the multi-layer and micro-heater type were designed and fabricated using the micro electro mechanical system (MEMS) process and palladium catalytic metal. The dimensions of the fabricated hydrogen gas sensor were about $5mm{\times}4mm$ and the sensing layer of palladium metal was deposited in the middle of the device. The sensing palladium films were modified to be nano-honeycomb and nano-hemisphere structures using an anodic aluminum oxide (AAO) template and nano-sized polystyrene beads, respectively. The sensitivities (Rs), which are the ratio of the relative resistance were significantly improved and reached levels of 0.783% and 1.045 % with 2,000 ppm H2 at $70^{\circ}C$ for nano-honeycomb and nano-hemisphere structured Pd films, respectively, on the other hand, the sensitivity was 0.638% for the plain Pd thin film. The improvement of sensitivities for the nano-honeycomb and nano-hemisphere structured Pd films with respect to the plain Pd-thin film was thought to be due to the nanoporous surface topographies of AAO and nano-sized polystyrene beads.

• Applied Chemistry for Engineering
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• v.2 no.4
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• pp.393-398
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• 1991

An experimental reactor system was devised and employed to examine catalytic coal gasification. A 4-kw tungsten halogen lamp heater combinded with a graphite sample basket coated with silicon nitride film made rapid heating and cooling possible. Also a small graphite cap on the thermocouple tip which located just beneath the sample basket helped remarkably to read real temperatures. Silicon nitride film on the basket and the cap showed very good protection against the reaction between graphite and oxidant gases during the experiments. The weight of specimen could be continuously measured without disturbance.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07b
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• pp.788-791
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• 2002

Tin doped indium oxide(ITO) films are highly conductive and transparent in the visible region whose property leads to the applications in solar cell, liquid crystal display, thermal heater, and other sensors. This paper investigated ITO films as a transparent conducting films for application of PDP. ITO films were grown on glass substrate by RF magnetron sputtering method. To achieve high transmittance and low resistivity, we examined the various film deposition such as substrate temperature, gas pressure, annealing temperature, and deposition time. We recommend the substrate temperature of $500^{\circ}C$ and post annealing of $200^{\circ}C$ in $O_2$ atmosphere for good conductivity and transmittance. From XRD examination, ITO films showed a preferred(222) orientation. As substrate temperature increased from RT to $500^{\circ}C$, the intensity of the (222) peak increased. The highest peak intensity was observed at a substrate temperature of $500^{\circ}C$. with the optimum growth conditions, ITO films showed resistivity of $1.04{\times}10^{-4}{\Omega}-cm$ and transmittance of 81.2% for a film 300nm thick in the wavelength range of the visible spectrum.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07b
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• pp.857-860
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• 2002

The material that is both conductive in electricity and transparent to the visible-ray is called transparent conducting thin film. It has many field of application such as solar cell, liquid crystal display, transparent electrical heater, selective optical filter, and a optical electric device. In this study, indium tin oxide (ITO ; Sn-doped $In_2O_3$) thin films were deposited on $SiO_2$/soda-lime glass plates by a dc magnetron sputtering technique. The crystallinity and electrical properties of the films were investigated by X-ray diffraction(XRD), atomic force microscopy (AFM) scanning and 4-point probe. The optical transmittance of ITO films in the range of 300-1000nm were measured with a spectrophotometer. As a result, we obtained polycrystalline structured ITO films with (222), (400), and (440) peak. Transmittance of all the films were higher than 90% in the visible range.

• 한국초전도학회:학술대회논문집
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• v.10
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• pp.145-145
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• 2000

Large area YBCO - films are series produced by thermal co-evaporation using a deposition scheme known as Garching process, which allows intermittent oxygen supply in a high vacuum ambient by an oxygen cup spaced closely underneath the moving substrates. The deposition area of 9" diameter is capable to handle very large wafers up to 8" diam. or numerous smaller wafers. The large distance between substrates and boat sources and an elaborate heater design guarantee excellent film uniformity over the entire deposition area. YBCO - films deposited by this technique are commercially fabricated for a variety of applications - the most prominent are resistive fault current limiters and microwave filters for mobile or satellite communications. IMUX and OMUX - filters are currently space qualined by Robert Bosch GmbH and are expected to be launched and installed on an experimental platform of the international space station ALPHA in 2001. Both of the above applications require quite different film specifications on the one hand, but at the same time extremely high uniformity and reproducibility on the other hand, since hundreds of YBCO - films are combined to large systems or have to be approved for manned space missions. The success of such projects is direct evidence that the technique of thermal evaporation is readily capable to meet these high demands and has become the major deposition technique to support the emerging HTS market.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.11a
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• pp.460-463
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• 2002

$MoO_3$ thin films were deposited on electrode and heater screen-printed alumina substrates in $O_2$ atmosphere by RF reactive sputtering using Molybdenum metal target. The deposition was performed at $300^{\circ}C$ with 350W of a forward power in an $Ar-O_2$ atmosphere. The working pressure was maintained at $3{\times}10^{-2}mtorr$ and all deposited films were annealed at $500^{\circ}C$ for 5hours. To investigate gas sensing characteristics of the addition doped $MoO_3$ thin film, Co, Ni and Pt were used as adding dopants. The sensing properties were investigated in tenn of gas concentration under exposure of reducing gases such as $H_2$, $NH_3$ and CO at optimum working temperature. Co-doped $MoO_3$ thin film shows the maximum 46.8% of sensitivity in $NH_3$ and Ni-doped $MoO_3$ thin film exhibits 49.7% of sensitivity in $H_2$.

• Proceedings of the KIEE Conference
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• 1997.07d
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• pp.1411-1413
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• 1997

The thin film that is electrically conductive and optically transparent is called conductive transparent thin film. ITO(Indium-Tin Oxide) which is a kind of conductive transparent thin film has been widely used in solar cell, transparent electrical heater, selective optical filter, FDP(Flat Display Panel) such as LCD (Liquid Crystal Display), PDP(Plasma Display Panel) and so on. Especially in PDP, ITO films is used as a transparent electrode in order to maintain discharge and decrease consumption power through the improvement of cell structure. In this study, we prepared ITO by reactive r.f. sputtering with indium-tin(Sn wt 10%) alloy target instead of indium-tin oxide target. The ITO films deposited at low temperature $150^{\circ}C$ and 8% $O_2$ partial pressure showed about $3.6{\Omega}/{\square}$. At the end of firing, the resistance of ITO was decreased, the optical transparence was improved above 90%.