• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2005년도 하계학술대회 논문집 Vol.6
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• pp.379-380
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• 2005

Single phase $CuInS_2$ thin film with a highest diffraction peak (112) at a diffraction angle ($2\Theta$) of $27.7^{\circ}$ was well made by SEL method at annealing temperature of $250^{\circ}C$ and annealing hour of 60 min in vacuum of $10^{-3}$ Torr or in S ambience for an hour. And the peak of diffraction intensity at miller index (112) of $CuInS_2$ thin film annealed in S ambience was shown a little higher about 11 % than in only vacuum. Single phase $CuInS_2$ thin films were appeared from 0.85 to 1.26 of Cu/In composition ratio and sulfur composition ratios of $CuInS_2$ thin films fabricated in S ambience were all over 50 atom%. Also when $CuInS_2$ composition ratio was 1.03, $CuInS_2$ thin film with chalcopyrite structure had the highest XRD peak (112). The largest lattice constant of a and grain size of $CuInS_2$ thin film in S ambience was 5.63 ${\AA}$ and 1.2 ${\mu}m$ respectively. And the films in S ambience were all p-conduction type with resistivities of around $10^{-1}{\Omega}cm$.

• Transactions on Electrical and Electronic Materials
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• 제16권3호
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• pp.130-134
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• 2015

This research proposes the use of a composition modulated (ZrO₂)_x(Al₂O₃)_1-x film as a charge trapping layer for charge trap flash memory; this is possible when the Zr (Al) atomic percent is controlled to form a variable bandgap as identified by the valence band offsets and electron energy loss spectrum measurements. Compared to memory devices with uniform compositional (ZrO₂)_0.1(Al₂O₃)_0.9 or a (ZrO₂)_0.92(Al₂O₃)_0.08 trapping layer, the memory device using the composition modulated (ZrO₂)_x(Al₂O₃)_1-x as the charge trapping layer exhibits a larger memory window (6.0 V) at the gate sweeping voltage of ±8 V, improved data retention, and significantly faster program/erase speed. Improvements of the memory characteristics are attributed to the special energy band alignments resulting from non-uniform distribution of elemental composition. These results indicate that the composition modulated (ZrO₂)_x(Al₂O₃)_1-x film is a promising candidate for future nonvolatile memory device applications.

• 한국전기전자재료학회논문지
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• 제19권10호
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• pp.918-922
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• 2006

Chalcogenide Phase change memory has the high performance necessary for next-generation memory, because it is a nonvolatile memory with high programming speed, low programming voltage, high sensing margin, low power consumption and long cycle duration. To minimize the power consumption and the program voltage, the new composition material which shows the better phase-change properties than conventional $Ge_2Sb_2Te_5$ device has to be needed by accurate material engineering. In the present work, we investigate the basic thermal and the electrical properties due to phase-change compared with chalcogenide-based new composition $Ge_1Se_1Te_2$ material thin film and convetional $Ge_2Sb_2Te_5$ PRAM thin film. The fabricated new composition $Ge_1Se_1Te_2$ thin film exhibited a successful switching between an amorphous and a crystalline phase by applying a 950 ns -6.2 V set pulse and a 90 ns -8.2 V reset pulse. It is expected that the new composition $Ge_1Se_1Te_2$ material thin film device will be possible to applicable to overcome the Set/Reset problem for the nonvolatile memory device element of PRAM instead of conventional $Ge_2Sb_2Te_5$ device.

• 한국재료학회지
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• 제3권4호
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• pp.388-394
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• 1993

PVC/액정 복합막의 응집상태 및 전기광학 특성을 넓은 막조성(30-70wt% LC)에 걸쳐 조사하였다. 또한 optical contrast가 가장 좋은 40/60(PVC/LC)중량조성으로 된 복합막에 대해서는 온도 및 외부교류전계의 주파수 및 전압응답을 측정한 결과 문턱 주파수는 20$V_{p-p}$ 이하(1 kHz, $25^{\circ}C$), rise time및 decay time은 모두 10ms 이하(V$100 _{p-p}$ , 1 kHz, $25^{\circ}C$)였다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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• pp.279-280
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• 2008

For the manufacture of the $CuGaS_2$, Cu, Ga and S were vapor-deposited in the named order. Among them, Cu and Ga were vapor-deposited by using the Evaporation method in consideration of their adhesive force to the substrate so that the composition of Cu and Ga might be 1 : 1, while the surface temperature having an effect on the quality of the thin film was changed from R.T.[$^{\circ}C$] to 150$[^{\circ}C]$ at intervals of 50$[^{\circ}C]$. As a result, at 400$[^{\circ}C]$ of the Annealing temperature, their chemical composition was measured in the proportion of 1 : 1 : 2. It could be known from this experimental result that it is the optimum condition to conduct Annealing on the $CuGaS_2$ thin film under a vacuum when the $CuGaS_2$ thin film as an optical absorption layer material for a solar cell is manufactured.

• 한국전기전자재료학회논문지
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• 제20권6호
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• pp.520-526
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• 2007

In order to acquire fundamental informations to fabricate high precision thin film resistors, NiCr/NiCrSi alloy films were prepared using Ni and Cr targets. Effect of composition on the electrical properties of the NiCr/NiCrSi alloy film were then investigated. Considering the effect of Si doping on the electrical and material characteristics, the lower TCR (temperature coefficient of resistance) values could be achieved for samples with Ni/Cr ratio of $0.8{\sim}1.5$ (in a range of relative higher specific resistivity and Cr composition of $40\;wt%{\sim}55\;wt%$) and with Si doping. Consequently, the sample prepared using a DC power showed a good TCR of $-25\;ppm/^{\circ}C$, which implies that increase of specific resistivity and decrease of TCR would be achieved more efficiently not for Ni-Cr binary material but for Si doped Ni-Cr ternary material, and not using RF power but using DC power in the sputtering process.

• Progress in Superconductivity
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• 제9권1호
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• pp.91-95
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• 2007

[ $YBa_2Cu_3O_{7-{\delta}}$ ] films have been prepared on $LaAlO_3$ (100) single-crystal substrates by the metal organic deposition using dichloroacetate precursors (DCA-MOD). DCA precursor solutions with different composition such as; Yttrium-excess(15 at%), barium-poor(25 at%), and a stoichiometric(Y:Ba:Cu=1:2:3) were prepared in order to investigate the effects of precursor composition on the properties of YBCO films prepared by DCA-MOD method. Coated films were calcined at low temperature up to $500^{\circ}C$ in flowing humid oxygen atmosphere. Conversion heat treatment was performed $800^{\circ}C$ for 2 h in flowing Ar gas containing 1000 ppm oxygen with a humidity of 9.45%. For the film prepared using excess yttrium composition, high critical current density ($J_c$) of $>2MA/cm^2$ was obtained whereas, for the films prepared using barium-poor composition, $J_c$ was lower than $1MA/cm^2$.

• 열처리공학회지
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• 제16권3호
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• pp.127-133
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• 2003

The effect of chemical composition on the microstructural change and tensile property in TRIP-assisted steels with different chemical composition was investigated by using SEM, TEM, XRD and UTM. As a result of microscopic observation, the morphology of retained austenite could be identified as two types; a granular type in a steel containing higher Si and a film type in a steel having higher C. For the case of higher C-containing steel with a tensile strength of 860 MPa and a total elongation of 38%, film-typed retained austenite could be observed between lath bainitic ferrite. Actually, metastable retained austenite was a requisite for the good formability, which means that chemical composition plays a significant role in the microstructure and tensile property of TRIP-assisted steels. With respect to tensile property, the steels containing suitable Si and Mn, respectively, showed a typical TRIP effect in stress-strain curve, while a steel containing higher Mn content exhibited the similar behavior shown in dual phase steel.

• 한국자동차공학회논문집
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• 제15권3호
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• pp.106-113
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• 2007

The effect of chemical composition on the microstructural change and tensile property in TRIP-assisted steels with different chemical composition was investigated by using SEM, TEM, XRD and UTM. As a result of microscopic observation, the morphology of retained austenite could be identified as two types : a granular type in a steel containing higher sillicon and a film type in a steel having higher carbon. For the case of higher carbon-containing steel with a tensile strength of 860 MPa and a total elongation of 38%, film-typed retained austenite could be observed between lath bainitic ferrite. Actually, metastable retained austenite was a requisite for the good formability, which means that chemical composition plays a significant role in the microstructure and tensile property of TRIP-assisted steels. With respect to tensile property, the steels containing suitable silicon and manganese, respectively, showed a typical TRIP effect in stress-strain curve, while a steel containing higher manganese content exhibited the assimilar behavior shown in dual phase steel.

• 한국고분자학회:학술대회논문집
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• 한국고분자학회 2006년도 IUPAC International Symposium on Advanced Polymers for Emerging Technologies
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• pp.365-365
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• 2006

The wavelength dispersion of birefringence (or retardation) is very important property for optical use of polymer films. Birefringence free film and retardation film have been widely used for applications such as liquid crystal display (LCD). In this study, miscible polymer blends which consist of polymers of positive and negative birefringence were found. By operating composition and orientation of molecules in the transparent blend films, the behavior of wavelength dispersion of birefringence (retardation) was controlled. The applicability to wideband birefringence free film and quarter wave (retardation) film was discussed.