• 제목/요약/키워드: Film Capacitor

검색결과 454건 처리시간 0.032초

RF Sputtering법에 의한 BaTiO$_3$세라믹스 박막의 전기적 특성 (The Electrical Properties of BaTiO$_3$Ceramics Thin Films by RF Sputtering Technique)

  • 이문기;류기원;배선기;이영희
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 1997년도 춘계학술대회 논문집
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    • pp.289-292
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    • 1997
  • BaTiO$_3$thin film capacitor were prepared on Pt(100)/SiO$_2$/Si(100)wafer by RF sputtering technique. Dielectric and electrical characteristics of the thin film capacitor are investigated. The Dielectric constant and loss were about 683 and 5[%], respectively. We found that the leakage current of thin film capacitor is depend on RF power during deposition. Because of increase of activation energy, leakage current inclosed at high RF power and sheet resistivity of the films was decreased. Swithching voltage of thin film capacitor was 4.4[V]

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소형.대용량 Metalized Film Capacitor의 용접 오차 검출 개발 (A Welding Inspection of Small-sized Metalized Film Capacitor with Large Capacity)

  • 정원영;오춘석;유영기;임종설;이서영
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 2004년도 학술대회 논문집 정보 및 제어부문
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    • pp.135-137
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    • 2004
  • In this study we'll deal with the small-sized metalized film capacitors with large capacity which head have $5mm{\times}5mm{\times}2.5mm$ dimension. The lead wire is used to weld at both sides of capacitors. At that time the position gap between the welding machine and lead wire supplier would cause the welding error. Also, during the tapping processing of metalized film capacitors, the interval error among the capacitors, the length error of lead frame attached at the capacitors, and the straightness distortion of the lead frame could happen. As mentioned, four kinds of error parameters will be measured and analyzed by using the automatic visual inspection system that is implemented with CCD camera, optical parts, background lighting, and image processing algorithms. Finally we are able to achieve success rate above 99% to detect the welding faults of capacitors in the field test.

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Au/$Ta_2$$O_5$/Pt MIM Capacitor의 annealing과 유전 특성 (A Study on the Dielectric and Annealing Properties in Au/$Ta_2$$O_5$/Pt MIM Capacitor)

  • 김인성;정순종;송재성;윤문수;박정후
    • 한국전기전자재료학회논문지
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    • 제14권12호
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    • pp.1016-1022
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    • 2001
  • This study presents the microstructure-electrical property relationship of reactive-sputtered Ta$_2$O$_{5}$ MIM capacitor structure processed by annealing in a vacuum and $O_2$ ambience. A microstructural investigation showed the existence of amorphous phase in as-deposited condition and the formation of preferentially oriented-Ta$_2$O$_{5}$ in $700^{\circ}C$ annealing. On annealing under the $O_2$ atmosphere, the Ta$_2$O$_{5}$ film exhibited the trend of its composition\`s approaching to stoichiometry from off-stoichiometry, analyzed by EPMA, the leakage current decrease and the enhanced temperature-capacitance characteristic stability. In the case of low temperature vacuum-annealing treatment, the leakage current behavior was stable irrespective of applied electric field. In the high temperature-annealed film at a vacuum condition, the electrical properties was observed to deteriorate. The results state that in Ta$_2$O$_{5}$ film annealed at $O_2$ atmosphere, gives rise to improvement of electrical characteristics in the capacitor were improved by reducing oxygen-vacancy and dandling Ta-O bond.-O bond.

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A Study on the Design and Characteristics of thin-film L-C Band Pass Filter

  • Kim In-Sung;Song Jae-Sung;Min Bok-Ki;Lee Won-Jae;Muller Alexandru
    • KIEE International Transactions on Electrophysics and Applications
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    • 제5C권4호
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    • pp.176-179
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    • 2005
  • The increasing demand for high density packaging technologies and the evolution to mixed digital and analogue devices has been the con-set of increasing research in thin film multi-layer technologies such as the passive components integration technology. In this paper, Cu and TaO thin film with RF sputtering was deposited for spiral inductor and MOM capacitor on the $SiO_2$/Si(100) substrate. MOM capacitor and spiral inductor were fabricated for L-C band pass filter by sputtering and lift-off. We are analyzed and designed thin films L-C passive components for band pass filter at 900 MHz and 1.8 GHz, important devices for mobile communication system. Based on the high-Q values of passive components, MOM capacitor and spiral inductors for L-C band pass filter, a low insertion loss of L-C passive components can be realized with a minimized chip area. The insertion loss was 3 dB for a 1.8 GHz filter, and 5 dB for a 900 MHz filter. This paper also discusses a analysis and practical design to thin-film L-C band pass filter.

금속 박막위에 ALD법으로 형성된 $Al_{2}O_{3}$ 박막의 계면 특성과 MIM capacitor의 제조 (Interface properties of $Al_{2}O_{3}$ thin film using ALD method on metal film and Fabrication of MIM capacitor)

  • 남상완;고성용;정영철;이용현
    • 대한전자공학회:학술대회논문집
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    • 대한전자공학회 2003년도 하계종합학술대회 논문집 II
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    • pp.1061-1064
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    • 2003
  • In this paper, we deposited A1$_2$O$_3$ thin film using atomic layer deposition(ALD) method on Ti and fabricated metal-insulator-metal(MIM) capacitor. In the result of this study, the typical deposition rate was about 1.12$\AA$/cycle. About 30 nm of Ti was consumed during deposition and TiO$_{x}$ was formed at the interface of A1$_2$O$_3$ and Ti. Its surface roughness was 1.54nm. The leakage current density was 1.5 nA/$\textrm{cm}^2$. The temperature coefficient of capacitance(TCC) of MIM capacitor was 41 ppm/$^{\circ}C$ at 1MHz and 100 ppm/$^{\circ}C$ at 100 kHz.z.

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SrTi0$_3$세라믹 캐패시터 박막의 I-V 특성 (I-V Characteristics of SrTiO$_3$ Ceramics Capacitor Thin Films.)

  • 이우선;김남오;정용호;이경섭
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 1996년도 추계학술대회 논문집
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    • pp.79-81
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    • 1996
  • We fabricated SrTiO$_3$thin film capacitor on the Ag/Si-wafer by RF sputtering deposition. And I-V characteristics and structual analysis of the thin film capacitor are investigated. We found that the leakage current of the films during deposition is strongly denpent on the ambient gas and substrate temperature. Because of increase of activation energy, leakage current increased at high temperature and resistivity of the films was decreased. According to the increase of oxygen gas flow rate, the conductivity of thin film capacitor was increased and leakage current was decreased.

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Analysis and Design of a Three-port Flyback Inverter using an Active Power Decoupling Method to Minimize Input Capacitance

  • Kim, Jun-Gu;Kim, Kyu-Dong;Noh, Yong-Su;Jung, Yong-Chae;Won, Chung-Yuen
    • Journal of Power Electronics
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    • 제13권4호
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    • pp.558-568
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    • 2013
  • In this paper, a new decoupling technique for a flyback inverter using an active power decoupling circuit with auxiliary winding and a novel switching pattern is proposed. The conventional passive power decoupling method is applied to control Maximum Power Point Tracking (MPPT) efficiently by attenuating double frequency power pulsation on the photovoltaic (PV) side. In this case, decoupling capacitor for a flyback inverter is essentially required large electrolytic capacitor of milli-farads. However using the electrolytic capacitor have problems of bulky size and short life-span. Because this electrolytic capacitor is strongly concerned with the life-span of an AC module system, an active power decoupling circuit to minimize input capacitance is needed. In the proposed topology, auxiliary winding defined as a Ripple port will partially cover difference between a PV power and an AC Power. Since input capacitor and auxiliary capacitor is reduced by Ripple port, it can be replaced by a film capacitor. To perform the operation of charging/discharging decoupling capacitor $C_x$, a novel switching sequence is also proposed. The proposed topology is verified by design analysis, simulation and experimental results.

3상 인버터 시스템에서 주파수 특성을 고려한 필름 콘덴서의 DC-link 적용 방법에 관한 연구 (The study on DC-link Film Capacitor in 3 Phase Inverter System for the Consideration of Frequency Response)

  • 박현수
    • 한국산학기술학회논문지
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    • 제19권4호
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    • pp.117-122
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    • 2018
  • 대용량 3상 시스템 에어컨은 최근 들어 소비 전력 저감을 위해 인버터 회로를 포함하고 있다. 인버터 회로는 교류를 다이오드를 통해 정류하고 DC-link 전원부 콘덴서에 의해 평활된 직류를 사용한다. 이 때 평활에 사용되는 DC-link 전원부 콘덴서는 전압 리플, 전류 리플 조건을 만족하기 위해 전해 콘덴서가 일반적으로 사용된다. 콘덴서의 용량을 줄이게 되면 회로부의 크기 및 무게, 비용을 줄일 수 있게 된다. 본 논문에서는 최소점 추정 PPL(Phase Locked Loop) 위상 제어와 평균 전압 d축 전류제어 기법을 조합하여 입력 리플 전류를 약 90% 저감하는 알고리즘을 제안한다. 입력 리플 전류의 감소로 인해 DC-link 콘덴서의 전류 리플도 감소하므로 콘덴서의 용량을 줄일 수 있지만 전해 콘덴서의 경우 등가 직렬 저항(ESR : Equivalent Series Resistance)이 크기 때문에 발열로 인한 수명이 한계를 가진다. 본 논문에서는 전해 콘덴서 대신 DC-link 단에 전류 리플을 고려한 필름 콘덴서를 선정하는 방법을 제안한다. 필름 콘데서의 정전 용량 선정, 내압 선정, RMS(Root Mean Square) 전류 용량, RMS 전류 주파수 해석을 고려해 콘덴서의 용량을 선정할 경우 1680uF의 전해 콘덴서를 20uF로 용량을 낮추어 설계함으로써 전원부 콘덴서의 크기 및 무게, 비용을 줄였으며 전동기 구동을 통해 동작을 확인하였다.

PWB 기판용 Embedded Capacitor필름 제작에 관한 연구 (Study on the Fabrication of Embedded Capacitor Films for PWB substrate)

  • 이주연;조성동;백경욱
    • 한국마이크로전자및패키징학회:학술대회논문집
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    • 한국마이크로전자및패키징학회 2001년도 추계 기술심포지움
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    • pp.21-27
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    • 2001
  • Epoxy/BaTiO$_3$composite film type capacitors with excellent stability at room temperature, uniform thickness, and electrical properties over a large area were successfully fabricated. We fabricated composite capacitor films with good film formation capability and easy process ability, from ACF-resin as a matrix and two kinds of BaTiO$_3$powders as fillers to increase the dielectric constant of the composite film. The crystal structure of the powders and its effects on dielectric constant of the films were investigated by X-ray diffraction. DSC and dielectric properties tests were conducted to decide the right curing temperature and the optimum amount of the curing agent. As a result, the capacitors of $7{\mu}{\textrm}{m}$ thick film with 10nF/cm2 and low leakage current were successfully demonstrated.

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