• The Transactions of the Korean Institute of Electrical Engineers C
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• v.48 no.7
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• pp.521-524
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• 1999

Nb silicide was formed on the Si micro-tip arrays in order to improve field emission properties of Si-tip field emitter array. After silicidization of the tips, the etch-back process, by which gate insulator, gate electrode and photoresist were deposited sequentially and gate holes were defined by removing gradually the photoresist by $O_2$ plasma from the surface, was applied. Si nitride film was used as a protective layer in order to prevent oxygen from diffusion into Nb silicide layer and it was identified that the NbSi2 was formed through annealing in $N_2$ ambient at $1100^{\circ}C$ for 1 hour. By the Nb silicide coating on Si tips, the turn-on voltage was decreased from 52.1 V to 32.3 V and average current fluctuation for 1 hour was also reduced from 5% to 2%. Also, the fabricated Nb silicide-coated Si tip FEA emitted electrons toward the phosphor and light emission was obtained at the gate voltage of 40~50 V.

• Journal of the Korean Ceramic Society
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• v.47 no.6
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• pp.623-626
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• 2010

We synthesized ZnO nanowires patterned on Si substrate and investigated the field emission properties of the nanowires. Firstly, Au catalyst layers were fabricated on Si substrate by photo-lithography and lift-off process. The diameter of Au pattern was $50\;{\mu}m$ and the pattern was arrayed as $4{\times}4$. ZnO nanowires were grown on the Au catalyst pattern by the aid of Au liquid phase. The orientation of the ZnO nanowires was vertical on the whole. Sufficient brightness was obtained when the electric field was $5.4\;V/{\mu}m$ and the emission current was $5\;mA/cm^2$. The threshold electric field was $5.4\;V/{\mu}m$ in the $4{\times}4$ array of ZnO nanowires, which is quite lower than that of the nanowires grown on the flat Si substrate. The lower threshold electric field of the patterned ZnO nanowires could be attributed to their vertical orientation of the ZnO nanowires.

• Proceedings of the Materials Research Society of Korea Conference
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• 1998.08a
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• pp.153.4-153
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• 1998

• Proceedings of the Korean Vacuum Society Conference
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• 1997.02a
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• pp.100-100
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• 1997

• Proceedings of the Materials Research Society of Korea Conference
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• 1998.08a
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• pp.138.4-138
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• 1998

• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.141-145
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• 2006

The possibility of an active-matrix carbon nanotube field emission display (AM-CNT FED) is discussed from the view points of display performance and cost. The critical issues for FED commercialization such as anode acceleration voltage, uniformity, stability and reliability can be solved through our AM-CNT FED technologies.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08b
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• pp.1545-1546
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• 2007

Zinc gallate-based RGB phosphors and vertically aligned carbon nanotube emitters are prepared for flat field-emission lamp. The blend phosphors of blue $ZnGa_2O_4$, green $ZnGa_2O_4:Mn^{2+}$ and red $ZnGa_2O_4:Cr^{3+}$ are coated on the front glass, and the carbon nanotubes are chemically bonded on the rear ITO glass as a cathode.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08a
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• pp.772-774
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• 2007

The improvement in the field emission parameters, luminescent uniformity, degradation rate and half life has been observed for the thin-multi wall carbon nanotube (t-MWCNT) composite, after incorporating the Zn nanoparticles. The Zn nanoparticles $(diameter\;{\sim}\;100\;{\pm}15\;nm)$ has been incorporated to synthesize the Zn-t-MWCNT composite.

• Journal of the Semiconductor & Display Technology
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• v.17 no.4
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• pp.6-10
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• 2018

Organic light emitting devices have attracted the attention of many people because of their high potential for self-emission and flexible display devices. However, due to limitations in device efficiency and lifetime, partial commercialization is underway. In this paper, we have investigated the electrical conduction mechanism of the organic light emitting device by the temperature and the thickness of the light emitting layer through the current - voltage characteristics with respect to the conduction mechanism directly affecting the efficiency and lifetime of the organic light emitting device. Through the study, it was found that the conduction in the low electric field region is caused by the movement of the heat excited charge in the ohmic region and the tunneling of the electric charge due to the high electric field in the high electric field region.

• Journal of the Semiconductor & Display Technology
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• v.8 no.3
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• pp.31-37
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• 2009

This paper presents one and two dimensional simulation results with discontinuous features (shocks) of capacitively coupled rf plasmas. The model consists of the first two and three moments of the Boltzmann equation for the ion and electron fluids respectively, coupled to Poisson's equation for the self-consistent electric field. The local field and drift-diffusion approximations are not employed, and as a result the charged species conservation equations are hyperbolic in nature. Hyperbolic equations may develop discontinuous solutions even if their initial conditions are smooth. Indeed, in this work, secondary electron emission is shown to produce transient electron shock waves. These shocks form at the boundary between the cathodic sheath (CS) and the quasi-neutral (QN) bulk region. In the CS, the electrons emitted from the electrode are accelerated to supersonic velocities due to the large electric field. On the other hand, in the QN the electric field is not significant and electrons have small directed velocities. Therefore, at the transition between these regions, the electron fluid decelerates from a supersonic to a subsonic velocity in the direction of flow and a jump in the electron velocity develops. The presented numerical results are consistent with both experimental observations and kinetic simulations.